EP0970526A2 - Dispositif de puissance a semi-conducteur - Google Patents

Dispositif de puissance a semi-conducteur

Info

Publication number
EP0970526A2
EP0970526A2 EP98957086A EP98957086A EP0970526A2 EP 0970526 A2 EP0970526 A2 EP 0970526A2 EP 98957086 A EP98957086 A EP 98957086A EP 98957086 A EP98957086 A EP 98957086A EP 0970526 A2 EP0970526 A2 EP 0970526A2
Authority
EP
European Patent Office
Prior art keywords
insulating layer
elongate
cells
gate electrode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98957086A
Other languages
German (de)
English (en)
Inventor
John Roger Cutter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of EP0970526A2 publication Critical patent/EP0970526A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Abstract

Un dispositif de puissance à semi-conducteur comprend une structure de transistor à effet de champ à grille isolée à plusieurs cellules dans laquelle chaque cellule (100) est présente au niveau d'une ouverture (110) correspondante dans une électrode (11) de grille en forme de réseau. Les cellules (100) et les ouvertures (110) ont une forme allongée avec des bords longitudinaux (X) au niveau desquels des zones (1) de passage sont prévues sous une couche (12) isolant la grille sous des parties longitudinales (11x) de l'électrode (11) de grille. Les zones (1) de passage sont absentes au niveau des extrémités (Z) des cellules allongées (100). Les parties longitudinales (11x) de l'électrode (11) de grille sont de préférence reliées au delà des extrémités (Z) des cellules allongées (100) par des parties (11z) d'interconnexion de l'électrode (11) de grille qui sont situées sur une couche (13) isolante plus épaisse que la couche (12) isolante de la grille. La couche (13) isolante plus épaisse est présente au moins entre les extrémités opposées (Z) de cellules allongées (100) voisines dans lesquelles les zones (1) de passage sont absentes.
EP98957086A 1997-12-19 1998-12-14 Dispositif de puissance a semi-conducteur Withdrawn EP0970526A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9726829.6A GB9726829D0 (en) 1997-12-19 1997-12-19 Power semiconductor devices
GB9726829 1997-12-19
PCT/IB1998/002027 WO1999033119A2 (fr) 1997-12-19 1998-12-14 Dispositif de puissance a semi-conducteur

Publications (1)

Publication Number Publication Date
EP0970526A2 true EP0970526A2 (fr) 2000-01-12

Family

ID=10823875

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98957086A Withdrawn EP0970526A2 (fr) 1997-12-19 1998-12-14 Dispositif de puissance a semi-conducteur

Country Status (4)

Country Link
EP (1) EP0970526A2 (fr)
JP (1) JP2001512629A (fr)
GB (1) GB9726829D0 (fr)
WO (1) WO1999033119A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4198302B2 (ja) * 2000-06-07 2008-12-17 三菱電機株式会社 半導体装置
EP1450411A1 (fr) * 2003-02-21 2004-08-25 STMicroelectronics S.r.l. Dispositif MOS de puissance avec une densité d'intégration élevée et son procédé de fabrication
ITMI20042243A1 (it) 2004-11-19 2005-02-19 St Microelectronics Srl Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione
US7569883B2 (en) 2004-11-19 2009-08-04 Stmicroelectronics, S.R.L. Switching-controlled power MOS electronic device
ITMI20042244A1 (it) 2004-11-19 2005-02-19 St Microelectronics Srl Dispositivo elettronico mos di potenza e relativo metodo di realizzazione

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW290735B (fr) * 1994-01-07 1996-11-11 Fuji Electric Co Ltd
TW280945B (fr) * 1994-11-21 1996-07-11 Fuji Electric Co Ltd

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9933119A2 *

Also Published As

Publication number Publication date
JP2001512629A (ja) 2001-08-21
GB9726829D0 (en) 1998-02-18
WO1999033119A2 (fr) 1999-07-01
WO1999033119A3 (fr) 1999-08-26

Similar Documents

Publication Publication Date Title
KR101399707B1 (ko) 자기 정렬된 트랜치 모스펫 구조물 및 그 제조 방법
US5468982A (en) Trenched DMOS transistor with channel block at cell trench corners
EP1066652B1 (fr) Semi-conducteurs a grille en tranchee et leur fabrication
US4914058A (en) Grooved DMOS process with varying gate dielectric thickness
US7005347B1 (en) Structures of and methods of fabricating trench-gated MIS devices
US6534367B2 (en) Trench-gate semiconductor devices and their manufacture
US7557409B2 (en) Super trench MOSFET including buried source electrode
US6720616B2 (en) Trench MOS transistor
US6600194B2 (en) Field-effect semiconductor devices
US20030057478A1 (en) Mos-gated power semiconductor device
US20030047779A1 (en) Trench-gate semiconductor devices and their manufacture
JPH08264764A (ja) 半導体装置
KR100883795B1 (ko) 대칭적인 트렌치 ｍｏｓｆｅｔ 디바이스 및 그 제조 방법
US20220052170A1 (en) Mosfet with distributed doped p-shield zones under trenches
KR19990050418A (ko) 이중 필드판 구조를 갖는 전력소자
EP0961325B1 (fr) Dispositif de puissance en technologie MOS à haute densité d'intégration
US20010023957A1 (en) Trench-gate semiconductor devices
EP0970526A2 (fr) Dispositif de puissance a semi-conducteur
EP0817274B1 (fr) Dispositif de puissance en technologie MOS asymétrique
KR100518506B1 (ko) 트랜치 게이트형 전력용 모스 소자 및 그 제조방법
US6147382A (en) Semiconductor switching device with segmented sources
EP0823735A1 (fr) Dispositif de puissance en technologie MOS
EP0996970B1 (fr) Fabrication de composants a semiconducteur a effet de champ
KR100272174B1 (ko) 횡형 디모스(ldmos) 트랜지스터 소자 및 그 제조방법
CN117790573A (zh) 一种SiC基半导体功率器件及其制备方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19990920

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB IT NL

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Withdrawal date: 20010205