EP0970476B1 - Memoire optique - Google Patents

Memoire optique Download PDF

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Publication number
EP0970476B1
EP0970476B1 EP98910876A EP98910876A EP0970476B1 EP 0970476 B1 EP0970476 B1 EP 0970476B1 EP 98910876 A EP98910876 A EP 98910876A EP 98910876 A EP98910876 A EP 98910876A EP 0970476 B1 EP0970476 B1 EP 0970476B1
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EP
European Patent Office
Prior art keywords
optical
memory
regenerative
switching element
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98910876A
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German (de)
English (en)
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EP0970476A1 (fr
Inventor
Alistair James Poustie
Keith James Blow
Robert John Manning
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British Telecommunications PLC
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British Telecommunications PLC
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Priority claimed from GBGB9706370.5A external-priority patent/GB9706370D0/en
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of EP0970476A1 publication Critical patent/EP0970476A1/fr
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C21/00—Digital stores in which the information circulates continuously

Definitions

  • the invention relates to an optical memory.
  • memory is one of the key building blocks to implement advanced information processing in future ultrahigh-speed photonic networks.
  • memory allows 100Gbit/s optical packets to be buffered and queued for subsequent processing of the data.
  • Memory is also an intrinsic function for serial optical computing systems.
  • serial optical memory have been demonstrated previously using recirculating optical fibre loops. These memory designs are either pulse-preserving, where the same optical pulses propagate on each circulation of the storage loop, or regenerative where the pulses are replaced after some number of memory circulations.
  • pulse preservation memories the long term stability of the data pattern depends on being able to retime and reshape the optical pulses within the memory loop, since it acts like a long transmission line and the pulses are degraded by propagation effects.
  • a regenerative optical memory having a transfer function arranged so that only optical data having a pulse amplitude above a predetermined threshold is stored and the amplitude of optical data stored is substantially equalised to at least one predetermined level after a number of circulations within the optical memory.
  • a regenerative optical memory is arranged to provide a transfer function which achieves amplitude equalisation for optical data stored by the memory. This has the effect of removing noise. Furthermore, any pulse amplitude modulation in the original input data is also removed. Equalisation may be to a number of predetermined levels determined by the transfer function of the memory. Only data which has a pulse amplitude above a storage threshold level determined by the transfer function of the memory is stored. Preferably, the regenerative memory includes means to vary the storage threshold level.
  • the regenerative memory comprises means for changing the energy of optical data pulses. More preferably, the regenerative memory comprises an optical amplifier, the gain of which is selected for stable storage of data. If the amplifier gain is too low then data rapidly decays as it recirculates the memory. If the amplifier gain is too high then random data may be created in the memory by the amplification of signals having a finite energy.
  • Suitable optical amplifiers include semiconductor optical amplifiers and erbium doped optical amplifiers.
  • the regenerative memory comprises a non-linear switching element. More preferably, the regenerative memory comprises two concatenated non-linear switching elements coupled together by an optical storage element.
  • the optical storage element is a length of optical fibre.
  • the optical storage element may be an optical waveguide, suitable examples of which include planar silica waveguides and semiconductor waveguides.
  • Suitable non-linear optical switching elements are semiconductor laser amplifiers in a loop mirror (SLALOMs). These are interferometric non-linear switches with an optical amplifier as the non-linear element.
  • the non-linear switching elements are terahertz optical asymmetric demultiplexers (TOADs), each of which is driven by an optical source. Suitable optical sources are distributed feedback semiconductor lasers.
  • the optical memory comprises an optical source for supplying switching pulses to an input of the optical switching element.
  • the optical switching element is an interferometric non-linear switch with an optical amplifier as the non-linear element. More preferably, the optical switching element is a terahertz optical asymmetric demultiplexer (TOAD), which is responsive to switching pulses from the optical source to allow data to be switched out of the optical loop.
  • TOAD terahertz optical asymmetric demultiplexer
  • the optical switching element includes an output for reading out data switched out of the optical loop.
  • Such a memory may be included in, for example, a computer, an optical repeater, or a communication network.
  • a known all-optical regenerative memory is-shown in Figure 1.
  • Two jitter-suppressed gain-switched distributed feedback (DFB) semiconductor lasers 1 and 2 at wavelengths 1.551 ⁇ m ( ⁇ 1 ) and 1.533 ⁇ m ( ⁇ 2 ), respectively, are provided as the optical pulse sources.
  • the pulse repetition rate is ⁇ 1GHz and each source gives ⁇ 10ps pulses after linear chirp compensation in a length of normally dispersive optical fibre.
  • Two nonlinear optical switching elements 3 and 4 are provided each comprising a 50:50 fused fibre coupler, two wavelength division multiplexed (WDM) couplers to introduce and reject the switching pulses, a fibre polarisation controller to bias the loop mirror and a semiconductor optical amplifier offset from the loop centre to give a switching window of ⁇ 80ps.
  • Optical switching elements of this type known as terahertz optical asymmetric demultiplexers (TOADS) , are described in a paper entitled "Asymmetric optical loop mirror: analysis of an all-optical switch", Applied Optics, vol. 33, No. 29, 1994.
  • the pulse train at ⁇ 2 is used as the input to the optical switching element 3 which is biased to total reflection in the absence of the switching pulses.
  • the pulse train at ⁇ 1 is split in two; one half is used as the input to the optical switching element 4 which is also biased to total reflection, the other half is modulated with a LiNbO 3 amplitude modulator 5 to generate the data pattern to be stored and is fed, only once, into a switching port 6 of the optical switching element 3.
  • the transmitted output 7 of the optical switching element 3 is connected to the switching input 8 for the optical switching element 4 and the transmitted output 9 of the optical switching element 4 is connected to a second switching port 10 in the optical switching element 3 by an optical fibre storage loop 11.
  • the optical switching element 3 switches the data pattern from ⁇ 1 to ⁇ 2 and the copied data is fed into the memory loop 11.
  • the optical switching element 4 only wavelength converts the data back to ⁇ 1 so that it can subsequently switch the optical switching element 3 again.
  • the contents-of the memory can be monitored by a 10% tap (not shown) within the fibre loop 11. Both short (pattern length ⁇ ) and long (pattern length ⁇ ⁇ ) data sequences can successfully be stored for several hours with this arrangement. This corresponds to greater than 10 billion circulations around the memory circuit and an effective bit error rate ratio of ⁇ 10 -13 .
  • Figure 2 shows an example of an all-optical regenerative memory of the present invention which provides amplitude equalisation such that any pulse amplitude modulation in the original input data is removed.
  • the architecture can discriminate between input pulses of differing amplitudes and so self select which pulses to store.
  • the memory architecture in Figure 2 is a combination of two concatenated nonlinear optical switching elements 3 and 4. Stable storage for several hours is obtained by full all-optical regeneration of the optical pulse data pattern after each circulation of an optical fibre storage loop 11.
  • These semiconductor optical amplifier based nonlinear optical switches have some advantages over all-fibre switching devices in that they require a very low switching energy (typically ⁇ 1 pJ per pulse) and can be relatively compact to reduce latency in the optical processing system.
  • an erbium amplifier 12 is inserted in the loop connecting the output 7 of the switching element 3 to the switching input 8 of the switching element 4.
  • the additional signal processing functions provided by this architecture are achieved by the use of a variable threshold level, which is selected to provide stable storage.
  • the main feature of the memory architecture which allows these additional signal processing functions is the sinusoidal transmission function of each of the nonlinear switching elements. For one round trip of the memory, there is an effective concatenation of nonlinear response functions and each time the data is regenerated, this transfer function is re-applied. Under this condition, the nonlinear switching characteristic rapidly evolves from a cosine squared response to a square window, as shown in Figure 3.
  • the graphs in Figure 3 are normalised so that an energy of 1 unit gives a phase shift of pi radians (and therefore 100% switching in a TOAD) and pi radians is shown normalised to unity.
  • FIG. 4 shows the ranges of this eventual square window as the overall transfer of the optical switching element 4 is varied (keeping the transfer function of the optical switching element 3 fixed). Below an absolute transfer value of 0.7785, the memory does not sustain a window and the pulses are lost. As the value increases, the window gets wider and the threshold for storage is reduced.
  • the flat top of the concatenated response creates the amplitude restoration function, as any input pulses with an initial energy in the range >pi/2 to ⁇ 3pi/2 are transformed to have equal energies. Similarly, any initial pulses with energies ⁇ pi/2 or >3pi/2 are quickly suppressed and the threshold energy for storage is at pi/2.
  • the data generator (not shown) used to input the pulse data pattern once into the memory has two independent channels which are combined to drive the LiNbo 3 amplitude modulator 5.
  • One channel (binary sequence 01001000) is held at a constant output and the second channel (binary sequence 10100101) is changed in amplitude to create a variable amplitude input pulse sequence to the memory. Since the lifetime of the erbium amplifier 12 provided in this memory is much longer than the pulse repetition rate then all the pulses are equally amplified and retain their relative amplitudes.
  • the experimental results are shown in Figures 5(a) to 5(e).
  • the upper oscilloscope traces in each Figure show the original input pulse data patterns and the lower traces show the data patterns stored in the memory after the initial pattern has been input once.
  • the Figures show sequentially how only the pulse amplitudes above the threshold level are stored and amplitude equalised.
  • the dependence of the threshold level position was measured by fixing the input data pattern as in Figure 5(c) and the threshold level varied by adjusting the gain of one of the erbium amplifier 12 between the optical switching elements 3 and 4 to modify the overall transfer function.
  • the stored pattern follows the sequence shown in Figure 5(c) to Figure 5(e) so that all pulses are stored as opposed to only three being above the original threshold level.
  • the regenerative optical memory shown in Figure 6 is similar to that of Figure 2 but includes a third optical switching element 13 (TOAD3) which facilitates selective modification of a data pattern stored in the memory.
  • a pulse train at ⁇ 2 from the DFB semiconductor laser 2 is fed via a delay stage 16 to an electro absorption modulator 14 where it is modulated with read data and supplied to a switching input 17 of the third optical switching element 13.
  • a data input 18 of the element 13 is connected via an isolator 19 to the output 9 of the switching element 4. In the absence of a switching pulse at the input 17, the pattern of data continues to circulate within the optical memory via the switching element 13.
  • the optical switching element 13 When a switching pulse is applied to the switching input of the optical switching element 13, if a data pulse is present at the input to the optical switching element 13 at the same instant, the data pulse is switched out of the memory loop 11.
  • the switched data pulse can be read out at the output 15 of the optical switching element 13.
  • the optical switching element 13 performs an AND function, selectively removing data from the data pattern stored in the memory. With regard to the data pattern circulating within the optical memory, this results in selective removal of pulses corresponding to logical "1"s.
  • the pulses which are read are blocked by the isolator 19 or the input to the element 13, but they could be directly accessed by using a fibre-optic circulator.
  • the switching elements 3,4 both contain semiconductor optical amplifiers (SOAs) which have band-edges around 1560nm. This has the advantage of maximising the phase change to gain change ratio at the operating wavelengths and reducing the degree of amplitude modulation for the pulses in the elements.
  • SOAs semiconductor optical amplifiers
  • adjustable delay line 16 and further adjustable delay lines 20,21 are used to attain bit-level synchronisation.
  • FIG 11 A modified version of the apparatus of Figure 6 is shown in Figure 11, in which the output 15 of the optical switching element 13 is connected to an input 101 of a subsequent regenerative memory.
  • This subsequent regenerative memory 100 may be of any suitable form, although preferably, it will be a regenerative memory according to the invention, for example as shown in Figure 2. If this is the case, the input 101 is formed by applying received optical pulses directly to the switch input 6 of the switching element 3, instead of having the modulator 5.
  • the regenerative memory 100 upon the application of a switching pulse to the switching input 17, any data pulse present at the input 18 to the optical switching element 13 will be read out of the memory loop and into the regenerative memory 100 via the output 15.
  • a stream of data pulses can be read out from the memory loop and stored in the regenerative memory 100.
  • pulses can be temporarily stored and then reinserted into the memory loop by connecting an output 102 of the regenerative memory 100 to a second switching input 108 of the switching element 4.
  • any time delays required to ensure that the data from the regenerative memory 100 is applied to the switching input 108 are achieved using suitable delay stages 103,104 between the output 15 of the switching element 13 and the regenerative memory 100 and between the output 102 of the regenerative memory 100 and the switching input 108 of the switching element 4.
  • the data can be read out of the memory loop and then simply written back into the memory loop at a subsequent time by replacing the subsequent regenerative memory 100 and the associated delay lines 103,104 by a single delay line.
  • This single delay line could be used to introduce the required time delay before the data pattern is written back into the memory loop via one of the switching elements 3,4,12, as described above.
  • FIGs 7, 8 and 9 show experimental results from writing and reading data from the memory with different "read” patterns.
  • Each upper oscilloscope trace shows the 40 bit data sequence stored originally in the memory by inputting the "write” data only once.
  • the middle oscilloscope traces show a section of the different data sequences used for the "read” operation, which were again input only once. Since there was only synchronisation of the stored data with the "read” data sequence at the bit level but no absolute synchronisation at the "memory frame” level, the length of the "read” data sequence was arranged to occupy the whole of the memory frame ( ⁇ 1000 bits). This guaranteed that the 40 bits of stored data were read with the first occurrence of the "read” data.
  • the lower oscilloscope trace shows the final stored data after pulses have been selectively read.
  • Each Figure is arranged vertically in bit-level synchronisation, so that the occurrence of a "read" pulse leads to the removal of the corresponding originally stored pulse. From careful inspection, it can be seen that the three different final stored data patterns all correctly follow from the "read" data being applied.
  • the erbium amplifier 12 has an adjustable gain so that the threshold level can be varied to achieve amplitude equalisation.
  • a number of additional erbium amplifiers 22 are also provided to ensure that the switching pulses have the correct energy.
  • Figure 10 shows a communications network 30 having a number of end stations 31 connected across the network 30 via a number of network elements 32 and optical fibre communication links 33.
  • the network endstations 31 each include a computer incorporating a regenerative optical memory in accordance with the present invention for storing data.
  • the network elements 32 which, for example, may be optical switches or optical repeaters, also include a regenerative optical memory in accordance with the present invention to enable optical data to be transmitted across the network 30.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Optical Communication System (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Claims (15)

  1. Mémoire optique à régénération comprenant une boucle optique (11) destinée à faire circuler des impulsions de données optiques dans celle-ci, et au moins un élément de commutation non linéaire (3, 4) agencé le long de la bouclé (11), caractérisée en ce qu'un amplificateur optique (12) est prévu le long de la boucle (11), le ou les éléments de commutation non linéaires (3, 4) et l'amplificateur (12) étant agencés de façon à régénérer les impulsions optiques circulant dans la boucle (11), l'amplificateur optique (12) comportant un gain de sorte que seules les impulsions présentant une amplitude supérieure à une valeur de seuil sont mémorisées dans la mémoire et que l'amplitude des impulsions optiques mémorisées dans la mémoire est sensiblement rendue égale à au moins un niveau prédéterminé après un certain nombre de circulations à l'intérieur de la boucle optique (11).
  2. Mémoire optique à régénération selon la revendication 1, dans laquelle au moins un élément de commutation non linéaire (3, 4) présente une fonction de transmission sinusoïdale.
  3. Mémoire optique à régénération selon la revendication 1 ou la revendication 2, dans laquelle deux éléments de commutation non linéaires (3, 4) sont prévus le long de la boucle (11) de sorte qu'ils sont concaténés, les deux éléments de commutation non linéaires (3, 4) étant couplés ensemble par un élément de mémorisation optique (11).
  4. Mémoire optique à régénération selon la revendication 3, dans laquelle l'élément de mémorisation optique est une longueur de fibre optique.
  5. Mémoire optique à régénération selon l'une quelconque des revendications précédentes, dans laquelle des moyens sont prévus pour faire varier la valeur de seuil à laquelle les impulsions sont mémorisées.
  6. Mémoire optique à régénération selon l'une quelconque des revendications précédentes, dans laquelle des moyens sont prévus en vue de modifier l'énergie spectrale des impulsions de données optiques.
  7. Mémoire optique à régénération selon l'une quelconque des revendications précédentes, dans laquelle l'élément de commutation optique ou bien chaque élément de commutation optique est un commutateur non linéaire interférométrique (3, 4) comportant un amplificateur optique associé en tant qu'élément non linéaire.
  8. Mémoire optique à régénération selon l'une quelconque des revendications précédentes, comprenant un autre élément de commutation optique (13) à l'intérieur de la boucle optique (11) destiné à commuter de façon sélective au moins une partie des impulsions de données hors de la boucle optique (11) en réponse à l'application d'un signal optique depuis une source optique (2) vers une entrée (17) de l'autre élément de commutation optique (13) de manière à modifier le contenu de la mémoire.
  9. Mémoire optique à régénération selon la revendication 8, dans laquelle au moins l'autre élément de commutation optique (13) est un démultiplexeur asymétrique optique dans le domaine des térahertz, qui est sensible à des impulsions de commutation provenant de la source optique afin de permettre que les données soient commutées hors de la boucle optique.
  10. Système de mémoire optique à régénération comprenant une première mémoire à régénération selon la revendication 8 ou la revendication 9, et une seconde mémoire optique à régénération (100), l'autre sortie d'élément de commutation optique (15) de la première mémoire étant reliée à une entrée (101) de la seconde mémoire optique en vue de mémoriser au moins une partie d'un motif de données lu à partir de la première mémoire optique.
  11. Système de mémoire optique à régénération selon la revendication 10, dans lequel la seconde mémoire optique (100) comprend une sortie (102) couplée à une entrée (108) de la première mémoire optique en vue de lire des données depuis la seconde mémoire optique (100) vers la première mémoire optique.
  12. Système de mémoire optique à régénération selon la revendication 11, dans lequel l'entrée (108) de la première mémoire optique est une seconde entrée de l'élément de commutation optique, et où la sortie (102) de la seconde mémoire à régénération (100) est couplée à la seconde entrée de l'élément de commutation optique de sorte qu'au moins une partie du motif de données dans la seconde mémoire optique (100) peut être lu dans la première mémoire optique en réponse à l'application d'un signal optique à l'entrée de l'élément de commutation optique.
  13. Ordinateur comprenant une mémoire optique selon l'une quelconque des revendications précédentes.
  14. Répéteur optique comprenant une mémoire optique selon l'une quelconque des revendications 1 à 13.
  15. Réseau de communication comprenant une mémoire optique selon l'une quelconque des revendications 1 à 13.
EP98910876A 1997-03-27 1998-03-18 Memoire optique Expired - Lifetime EP0970476B1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB9706370 1997-03-27
GBGB9706370.5A GB9706370D0 (en) 1997-03-27 1997-03-27 An optical memory
US08/904,836 US6035081A (en) 1997-03-27 1997-08-01 Optical memory
US904836 1997-08-01
PCT/GB1998/000821 WO1998044512A1 (fr) 1997-03-27 1998-03-18 Memoire optique

Publications (2)

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EP0970476A1 EP0970476A1 (fr) 2000-01-12
EP0970476B1 true EP0970476B1 (fr) 2003-01-29

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EP98910876A Expired - Lifetime EP0970476B1 (fr) 1997-03-27 1998-03-18 Memoire optique

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EP (1) EP0970476B1 (fr)
JP (1) JP4553987B2 (fr)
AU (1) AU6510298A (fr)
DE (1) DE69811059T2 (fr)
WO (1) WO1998044512A1 (fr)

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US6917739B2 (en) 2003-03-27 2005-07-12 Agilent Technologies, Inc. Optical cache memory
JP5944849B2 (ja) * 2013-03-08 2016-07-05 日本電信電話株式会社 光信号バッファメモリ回路
JP5944848B2 (ja) * 2013-03-08 2016-07-05 日本電信電話株式会社 光信号バッファメモリ回路
JP5944847B2 (ja) * 2013-03-08 2016-07-05 日本電信電話株式会社 光信号バッファメモリ回路
JP5944844B2 (ja) * 2013-03-08 2016-07-05 日本電信電話株式会社 光信号バッファメモリ回路ならびに光信号バッファ方法
JP5944845B2 (ja) * 2013-03-08 2016-07-05 日本電信電話株式会社 光信号バッファメモリ回路ならびに光信号バッファ方法
JP5944846B2 (ja) * 2013-03-08 2016-07-05 日本電信電話株式会社 光信号バッファメモリ回路
ES2934983T3 (es) 2016-03-22 2023-02-28 Nkb Properties Man Llc Sistema y procedimiento de almacenamiento de datos en movimiento
EP3834019A4 (fr) 2018-08-02 2022-05-18 Lyteloop Technologies, Llc Procédé et appareil de stockage de signaux d'onde dans une cavité
ES2939349T3 (es) 2018-08-10 2023-04-21 Nkb Properties Man Llc Sistema y procedimiento para ampliar la longitud de la trayectoria de una señal de onda mediante multiplexación angular
EP3878063A4 (fr) 2018-11-05 2022-08-17 Lyteloop Technologies, Llc Systèmes et procédés de construction, de fonctionnement et de commande de multiples amplificateurs, régénérateurs et émetteurs-récepteurs en utilisant des composants communs partagés

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JPH0964819A (ja) * 1995-08-23 1997-03-07 Fujitsu Ltd 光システム

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Publication number Publication date
WO1998044512A1 (fr) 1998-10-08
JP4553987B2 (ja) 2010-09-29
JP2001517321A (ja) 2001-10-02
DE69811059D1 (de) 2003-03-06
AU6510298A (en) 1998-10-22
DE69811059T2 (de) 2003-11-06
EP0970476A1 (fr) 2000-01-12

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