EP0913754B1 - Umschaltbare Gleichspannungsregelungsschaltung - Google Patents

Umschaltbare Gleichspannungsregelungsschaltung Download PDF

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Publication number
EP0913754B1
EP0913754B1 EP98410126A EP98410126A EP0913754B1 EP 0913754 B1 EP0913754 B1 EP 0913754B1 EP 98410126 A EP98410126 A EP 98410126A EP 98410126 A EP98410126 A EP 98410126A EP 0913754 B1 EP0913754 B1 EP 0913754B1
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EP
European Patent Office
Prior art keywords
thyristor
transistor
voltage
terminal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98410126A
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English (en)
French (fr)
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EP0913754A1 (de
Inventor
Jean-Michel Simonet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
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STMicroelectronics SA
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • the present invention relates to a regulation circuit switchable DC voltage.
  • Such a circuit is shown schematically in the figure 1 and is designated by the reference 1. It is connected by its input at a direct voltage Vin and supplies a voltage at its output Vout which must remain as constant as possible when Vin varies or when the current Iout in a load L varies.
  • This circuit is provided with a CTRL command input to provide output either the voltage Vout or else a zero voltage.
  • a application of such a circuit is, in the automotive field, to power a light-emitting diode or a chain of diodes emitting. These light-emitting diodes can, for example, as the third rear red light in a car.
  • the voltage Vin is the battery voltage of the vehicle and can vary significantly.
  • Vin voltage and Vout voltage are positive voltages referenced to ground.
  • FIG. 2 represents an elementary regulation circuit Of voltage. Voltage regulation is ensured by a avalanche diode Z whose anode is connected to ground and whose the cathode is connected on the one hand to a regulated output terminal Vout and on the other hand to a Wine input terminal via of a resistance R1.
  • a switch such as a transistor TR1 is disposed between the Vout terminal and the ground. The basis of this transistor receives the control voltage CTRL. So when the transistor is blocked, there is at the output a voltage Vout substantially equal to the avalanche voltage of the avalanche diode Z.
  • This circuit has several disadvantages. A first drawback resides in the presence of the power resistor R1.
  • FIG. 3 Another series resistance mounting is illustrated in figure 3.
  • a resistor R1 is connected between the terminals Vin and Vout as in figure 2.
  • An avalanche diode Z is connected between the collector and the base of transistor TR1, itself connected between Vout and ground.
  • Polarization resistance R2 is connected between base and emitter of transistor TR1.
  • the nominal regulation voltage is the diode voltage avalanche plus base / emitter voltage of transistor TR1.
  • An advantage compared to the assembly of Figure 2 is that the voltage Vout varies less with variations in voltage Vin.
  • circuits in the prior art have also been provided in which a semiconductor component, usually less expensive than a power resistor, is arranged in the branch in series between the Vin input and Vout output terminals.
  • This semiconductor component also allows current to be interrupted in the power branch and therefore limit losses during the phases where a zero output voltage is desired.
  • FIG. 4 represents an example of a thyristor circuit trigger type (GTO).
  • GTO Th1 thyristor is connected by its anode to the Vin terminal and by its cathode to the Vout terminal.
  • a resistor R3 is connected between trigger anode and cathode trigger.
  • the cathode trigger is connected to ground via an avalanche diode Z and possibly a live diode d to ensure temperature compensation function.
  • a transistor TR2 is connected between the cathode trigger of thyristor Th1 and the mass.
  • the base of transistor TR2 is connected to a terminal of CTRL command. When the transistor is blocked, the thyristor is normally conductive under the effect of its trigger polarization due to resistance R3.
  • the output voltage Vout is regulates the cathode / trigger voltage drop plus the voltage of the avalanche diode Z.
  • the output voltage Vout is regulates the cathode / trigger voltage drop plus the voltage of the avalanche diode Z.
  • FIG. 5 Another circuit with semiconductor component is shown in figure 5.
  • the thyristor Th1 is replaced by a transistor TR3.
  • the other elements of the circuit are similar to those of Figure 4.
  • This circuit has the particular disadvantage of require a relatively high gain transistor which is relatively difficult to obtain in the case of a transistor power with significant forward voltage withstand.
  • the present invention aims to achieve a circuit of the same family as those of FIGS. 4 and 5, that is to say in which the connection between the input and output terminals is provided by a semiconductor component but having relative to known circuits better voltage regulation.
  • Another object of the present invention is to achieve such a circuit which can be simply integrated in the form of a single semiconductor component.
  • the present invention provides a switchable DC voltage regulation circuit having an input terminal, an output terminal, a reference and a control terminal, comprising an opening thyristor by the trigger whose main terminals are connected at the input terminal and the output terminal, respectively; a resistor connected between the input terminal and the trigger thyristor cathode; a transistor whose main terminals are connected to the thyristor cathode trigger and to the terminal reference, respectively; and an avalanche diode connected between the output terminal and the base of the transistor.
  • the resistor is connected between the anode trigger and the thyristor cathode trigger.
  • the present invention also relates to a monolithic component implementing the above circuit, comprising an N-type substrate divided into two boxes by P-type insulating walls, the thyristor being produced in a first box in lateral form, the transistor being produced in a second box in vertical form and the avalanche diode being produced by the junction between an N + type region and the base region of the transistor.
  • the rear face of the box comprising the thyristor comprises a P + type diffused region.
  • this component comprises, on the side of its rear face, a layer insulation under the isolation walls.
  • resistance consists of a weakly P-type region doped in contact with the cathode trigger region.
  • the present invention provides a semiconductor component control circuit series, this component being a GTO type thyristor.
  • the anode of the thyristor is connected to the Vin terminal and the cathode of the thyristor at terminal Vout.
  • the anode, or preferably the trigger anode, the thyristor is connected to its cathode trigger by a bias resistance R.
  • the cathode trigger of the thyristor Th is also connected to the collector of a transistor T of the type NPN whose transmitter is connected to ground.
  • the Vout exit terminal is connected to the base of transistor T via a avalanche diode Z.
  • the base of transistor T is also connected to a control terminal CTRL intended to put the transistor in saturation when you want to block the GTO Th thyristor.
  • the first advantage namely temperature regulation, results from the serial link of the avalanche diode Z with the base / emitter junction of transistor T.
  • the second advantage namely the stability of the output voltage when the input voltage varies, has been observed experimentally and can be expressed by the comparative tables below between the assemblies in FIGS. 4 and 6.
  • Table I corresponds at room temperature operation and table II at 100 ° C operation.
  • Iin and Iout respectively designate the input and output currents (in mA) and the voltages are expressed in volts.
  • an avalanche diode Z was chosen, the avalanche voltage of which is 10 V.
  • Table III below illustrates the stability of the output voltage Vout when the load varies, while the input voltage Vin is constant (20 V).
  • the resistance of the load is designated by Rout.
  • VZ designates the actual voltage across the avalanche diode (whose nominal voltage is 10 V) and Vbe the actual base-emitter voltage drop of transistor T.
  • a another advantage of the present invention is that the circuit of the figure 6 lends itself well to being integrated using techniques thyristor integration classics, in which the transistors of power have relatively small gains.
  • Figure 7 shows an example of such a structure integrated.
  • This structure is formed from a substrate 10 of type N comprising two boxes separated by a diffusion wall 12 of type P.
  • the GTO type thyristor is a lateral thyristor produced in the left box of Figure 7 and the entire transistor T and the avalanche diode Z is made in the right box of figure 7.
  • the lateral thyristor Th comprises PNPN regions respectively designated by the references 14, 10, 15 and 16.
  • Region 14 corresponds to the anode of the thyristor, region 10 to the semiconductor substrate, region 15 to the cathode gate region, and region 16 at the cathode.
  • a P + type region 18 is provided which improves the sensitivity of the GTO thyristor.
  • the resistance R between anode trigger and cathode is made in integrated form and corresponds to a lightly doped P-type region 19 disposed between the region of cathode trigger 15 and a metallization 20 establishing a contact with region 19 and with substrate 10 (which corresponds to the anode trigger region).
  • the transistor T is produced in vertical form.
  • This transistor comprises an N + type collector region 21 on the side of the rear face and, on the front side, a P type base region 22 in which emitter diffusions 23 of N + type are produced.
  • an N + type region 25 is also formed, constituting with this base a junction corresponding to the avalanche diode Z.
  • the metallizations making it possible to constitute the output terminals and the connections between the different elements. It will be noted that, on the side of the rear face, under the insulation wall 12 and up to the regions P + 18 and N + 21, an insulating layer 30 is provided, the metallization of the rear face being formed uniformly over the whole rear face and coming into contact with regions 18 and 21. The insulating layer 30 avoids possible interactions between the thyristor and the transistor.
  • the trigger terminal G is connected by wire to the rear face metallization.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Thyristors (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Power Conversion In General (AREA)
  • Bipolar Integrated Circuits (AREA)

Claims (6)

  1. Schaltbare Glelchstrom-Spannungsregelschaltung mit einem Eingangsanschluß (Vin), einem Ausgangsanschluß (Vout), einem Bezugsanschluß und einem Steueranschluß (CTRL), die Folgendes aufweist:
    einen Gate-Abschalt-Thyristor (Th), dessen Hauptanschlüsse mit dem Eingangsanschluß bzw. dem Ausgangsanschluß verbunden sind;
    einen Widerstand (R), der mit dem Eingangsanschluß und dem Kathoden-Gate des Thyristors verbunden ist;
    einen Transistor (T), dessen Hauptanschlüsse mit dem Kathoden-Gate des Thyristors und mit dem Bezugsanschluß verbunden sind; und
    eine Zener-Diode (Z), die zwischen dem Ausgangsanschluß und der Basis des Transistors verbunden ist.
  2. Schaltung nach Anspruch 1, dadurch gekennzeichnet, dass der Widerstand (R) zwischen dem Anoden-Gate und dem Kathoden-Gate des Thyristors verbunden ist.
  3. Monolithische Komponente, die die Regelschaltung gemäß Anspruch 1 implementiert, dadurch gekennzeichnet, dass sie ein Substrat (10) vom N-Typ umfasst, das durch isolierende Wände (12) vom P-Typ in zwei Töpfe bzw. Senken unterteilt ist, wobei der Thyristor in einem ersten Topf bzw. einer ersten Senke in seitlicher bzw. lateraler Form implementiert ist, wobei der Transistor in einem zweiten Topf bzw. einer zweiten Senke in vertikaler Form implementiert ist, und wobei die Zener-Diode durch die Verbindung bzw. Grenzschicht zwischen einem Bereich (25) vom N+-Typ und dem Basisbereich (22) des Transistors implementiert ist.
  4. Komponente gemäß Anspruch 3, dadurch gekennzeichnet, dass die hintere Oberfläche bzw. Rückseite des den Thyristor umfassenden Topfes einen P+-Typ-diffundierten Bereich (18) umfasst.
  5. Komponente gemäß Anspruch 3, dadurch gekennzeichnet, dass die Komponente auf ihrer hinteren Oberfläche bzw. Rückseite unter den isolierenden Wänden eine Isolierschicht (30) umfasst.
  6. Komponente gemäß Anspruch 3, dadurch gekennzeichnet, dass der Widerstand (R) aus einer leicht dotierten P-Typ-Schicht (19) in Kontakt mit dem Kathoden-Gate-Bereich (15) gebildet ist.
EP98410126A 1997-10-31 1998-10-30 Umschaltbare Gleichspannungsregelungsschaltung Expired - Lifetime EP0913754B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9713987 1997-10-31
FR9713987A FR2770656B1 (fr) 1997-10-31 1997-10-31 Circuit de regulation de tension continue commutable

Publications (2)

Publication Number Publication Date
EP0913754A1 EP0913754A1 (de) 1999-05-06
EP0913754B1 true EP0913754B1 (de) 2003-08-20

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EP98410126A Expired - Lifetime EP0913754B1 (de) 1997-10-31 1998-10-30 Umschaltbare Gleichspannungsregelungsschaltung

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US (1) US6215289B1 (de)
EP (1) EP0913754B1 (de)
JP (1) JP4106772B2 (de)
DE (1) DE69817295D1 (de)
FR (1) FR2770656B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2781899B1 (fr) * 1998-07-30 2000-10-06 St Microelectronics Sa Generateur de courant constant
US7622753B2 (en) * 2005-08-31 2009-11-24 Stmicroelectronics S.A. Ignition circuit
DE102008045410B4 (de) 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode
DE102012105162B4 (de) * 2012-06-14 2017-02-02 Infineon Technologies Austria Ag Integriertes Leistungshalbleiterbauelement, Herstellungsverfahren dafür und Chopperschaltung mit integriertem Halbleiterbauelement

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Publication number Publication date
DE69817295D1 (de) 2003-09-25
US6215289B1 (en) 2001-04-10
JPH11219222A (ja) 1999-08-10
FR2770656B1 (fr) 2000-01-14
JP4106772B2 (ja) 2008-06-25
FR2770656A1 (fr) 1999-05-07
EP0913754A1 (de) 1999-05-06

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