EP0913754A1 - Umschaltbare Gleichspannungsregelungsschaltung - Google Patents

Umschaltbare Gleichspannungsregelungsschaltung Download PDF

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Publication number
EP0913754A1
EP0913754A1 EP98410126A EP98410126A EP0913754A1 EP 0913754 A1 EP0913754 A1 EP 0913754A1 EP 98410126 A EP98410126 A EP 98410126A EP 98410126 A EP98410126 A EP 98410126A EP 0913754 A1 EP0913754 A1 EP 0913754A1
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EP
European Patent Office
Prior art keywords
thyristor
transistor
trigger
voltage
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98410126A
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English (en)
French (fr)
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EP0913754B1 (de
Inventor
Jean-Michel Simonet
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STMicroelectronics SA
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STMicroelectronics SA
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Publication date
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • the present invention relates to a regulation circuit switchable DC voltage.
  • Such a circuit is shown schematically in the figure 1 and is designated by the reference 1. It is connected by its input at a direct voltage Vin and supplies a voltage at its output Vout which must remain as constant as possible when Vin varies or when the current Iout in a load L varies.
  • This circuit is provided with a CTRL command input to provide output either the voltage Vout or else a zero voltage.
  • a application of such a circuit is, in the automotive field, to power a light emitting diode or a chain of diodes electroluminescent. These light-emitting diodes can, for example, serve as a car's third red taillight.
  • the voltage Vin is the battery voltage of the vehicle and can vary significantly.
  • FIG. 2 represents an elementary regulation circuit Of voltage. Voltage regulation is ensured by a avalanche diode Z whose anode is connected to ground and whose the cathode is connected on the one hand to a regulated output terminal Vout and on the other hand to a Wine input terminal via of a resistance R1.
  • a switch such as a transistor TR1 is disposed between the Vout terminal and the ground. The basis of this transistor receives the control voltage CTRL. So when the transistor is blocked, there is at the output a voltage Vout substantially equal to the avalanche voltage of the avalanche diode Z.
  • This circuit has several disadvantages. A first drawback resides in the presence of the power resistor R1.
  • FIG. 3 Another series resistance mounting is illustrated in figure 3.
  • a resistor R1 is connected between terminals Vin and See as in figure 2.
  • An avalanche diode Z is connected between the collector and the base of transistor TR1, itself connected between Vout and ground.
  • Polarization resistance R2 is connected between base and emitter of transistor TR1.
  • the nominal regulation voltage is the diode voltage avalanche plus base / emitter voltage of transistor TR1.
  • An advantage compared to the assembly of Figure 2 is that the voltage Vout varies less with variations in voltage Vin.
  • circuits in the prior art have also been provided in which a semiconductor component, usually less expensive than a power resistor, is arranged in the branch in series between the Vin input and Vout output terminals.
  • This semiconductor component also allows the current to be interrupted in the power branch and therefore limit losses during the phases where a zero output voltage is desired.
  • FIG. 4 represents an example of a thyristor circuit trigger type (GTO).
  • GTO Th1 thyristor is connected by its anode to the Vin terminal and by its cathode to the Vout terminal.
  • a resistor R3 is connected between trigger anode and cathode trigger.
  • the cathode trigger is connected to ground via an avalanche diode Z and possibly a live diode d to ensure temperature compensation function.
  • a transistor TR2 is connected between the cathode trigger of thyristor Th1 and the mass.
  • the base of transistor TR2 is connected to a terminal of CTRL command. When the transistor is blocked, the thyristor is normally conductive under the effect of its trigger polarization due to resistance R3.
  • the output voltage Vout is regulates the cathode / trigger voltage drop plus the voltage of the avalanche diode Z.
  • the output voltage Vout is regulates the cathode / trigger voltage drop plus the voltage of the avalanche diode Z.
  • FIG. 5 Another circuit with semiconductor component is shown in figure 5.
  • the thyristor Th1 is replaced by a transistor TR3.
  • the other elements of the circuit are similar to those of Figure 4.
  • This circuit has the particular disadvantage of require a relatively high gain transistor which is relatively difficult to obtain in the case of a transistor power with high direct voltage withstand.
  • the present invention aims to achieve a circuit of the same family as those of FIGS. 4 and 5, that is to say in which the connection between the input and output terminals is provided by a semiconductor component but having relative to known circuits better voltage regulation.
  • Another object of the present invention is to achieve such a circuit which can be simply integrated in the form of a single semiconductor component.
  • the present invention provides a switchable DC voltage regulation circuit having an input terminal, an output terminal, a reference and a control terminal, comprising an opening thyristor by the trigger whose main terminals are connected at the input terminal and the output terminal, respectively; a resistor connected between the input terminal and the trigger thyristor cathode; a transistor whose main terminals are connected to the thyristor cathode trigger and to the terminal reference, respectively; and an avalanche diode connected between the output terminal and the base of the transistor.
  • the resistor is connected between the anode trigger and the thyristor cathode trigger.
  • the present invention also relates to a monolithic component for the implementation of the above circuit, comprising an N-type substrate divided into two boxes by P-type isolation walls, the thyristor being produced in a first box in lateral form. , the transistor being produced in a second box in vertical form and the avalanche diode being produced by the junction between an N + type region and the base region of the transistor.
  • the rear face of the box comprising the thyristor comprises a P + type diffused region.
  • this component comprises, on the side of its rear face, a layer insulation under the isolation walls.
  • resistance consists of a weakly P-type region doped in contact with the cathode trigger region.
  • the present invention provides a semiconductor component control circuit series, this component being a GTO type thyristor.
  • the anode of the thyristor is connected to the Vin terminal and the cathode of the thyristor at terminal Vout.
  • the anode, or preferably the trigger anode, the thyristor is connected to its cathode trigger by a bias resistance R.
  • the cathode trigger of the thyristor Th is also connected to the collector of a transistor T of the type NPN whose transmitter is connected to ground.
  • the Vout exit terminal is connected to the base of transistor T via a avalanche diode Z.
  • the base of transistor T is also connected to a control terminal CTRL intended to put the transistor in saturation when you want to block the GTO Th thyristor.
  • the first advantage namely temperature regulation, results from the serial link of the avalanche diode Z with the base / emitter junction of transistor T.
  • the second advantage namely the stability of the output voltage when the input voltage varies, has been observed experimentally and can be expressed by the following comparative tables between the assemblies in Figures 4 and 6.
  • Table I corresponds at room temperature operation and Table II at 100 ° C operation.
  • Iin and Iout respectively designate the input and output currents (in mA) and the voltages are expressed in volts.
  • an avalanche diode Z was chosen whose avalanche voltage is 10 V.
  • Table III below illustrates the stability of the output voltage Vout when the load varies, while the input voltage Vin is constant (20 V).
  • the resistance of the load is designated by Rout.
  • VZ denotes the real voltage across the avalanche diode (whose nominal voltage is 10 V) and Vbe the real base-emitter voltage drop of transistor T.
  • a another advantage of the present invention is that the circuit of the figure 6 lends itself well to being integrated using techniques thyristor integration classics, in which the transistors of power have relatively small gains.
  • Figure 7 shows an example of such a structure integrated.
  • This structure is formed from a substrate 10 of type N comprising two boxes separated by a diffusion wall 12 of type P.
  • the GTO type thyristor is a lateral thyristor produced in the left box of Figure 7 and the entire transistor T and the avalanche diode Z is made in the right box of figure 7.
  • the lateral thyristor Th comprises PNPN regions respectively designated by the references 14, 10, 15 and 16.
  • Region 14 corresponds to the anode of the thyristor, region 10 to the semiconductor substrate, region 15 to the cathode gate region, and region 16 at the cathode.
  • a P + type region 18 is provided which improves the sensitivity of the GTO thyristor.
  • the resistance R between anode trigger and cathode is made in integrated form and corresponds to a lightly doped P-type region 19 disposed between the region of cathode trigger 15 and metallization 20 establishing a contact with region 19 and with substrate 10 (which corresponds to the anode trigger region).
  • the transistor T is produced in vertical form.
  • This transistor comprises a collector region 21 of N + type on the side of the rear face and, on the side of the front face, a base region 22 of P type in which emitter diffusions 23 of N + type are produced.
  • an N + type region 25 is also formed, constituting with this base a junction corresponding to the avalanche diode Z.
  • the metallizations making it possible to constitute the output terminals and the connections between the different elements. It will be noted that, on the side of the rear face, under the insulation wall 12 and up to the regions P + 18 and N + 21, an insulating layer 30 is provided, the metallization of the rear face being formed uniformly over the whole rear face and coming into contact with regions 18 and 21. The insulating layer 30 avoids possible interactions between the thyristor and the transistor.
  • the trigger terminal G is connected by wire to the rear face metallization.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Bipolar Integrated Circuits (AREA)
EP98410126A 1997-10-31 1998-10-30 Umschaltbare Gleichspannungsregelungsschaltung Expired - Lifetime EP0913754B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9713987 1997-10-31
FR9713987A FR2770656B1 (fr) 1997-10-31 1997-10-31 Circuit de regulation de tension continue commutable

Publications (2)

Publication Number Publication Date
EP0913754A1 true EP0913754A1 (de) 1999-05-06
EP0913754B1 EP0913754B1 (de) 2003-08-20

Family

ID=9513128

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98410126A Expired - Lifetime EP0913754B1 (de) 1997-10-31 1998-10-30 Umschaltbare Gleichspannungsregelungsschaltung

Country Status (5)

Country Link
US (1) US6215289B1 (de)
EP (1) EP0913754B1 (de)
JP (1) JP4106772B2 (de)
DE (1) DE69817295D1 (de)
FR (1) FR2770656B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114185295A (zh) * 2021-12-16 2022-03-15 广州城市理工学院 一种交互装置的电路

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2781899B1 (fr) * 1998-07-30 2000-10-06 St Microelectronics Sa Generateur de courant constant
US7622753B2 (en) * 2005-08-31 2009-11-24 Stmicroelectronics S.A. Ignition circuit
DE102008045410B4 (de) 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode
DE102012105162B4 (de) * 2012-06-14 2017-02-02 Infineon Technologies Austria Ag Integriertes Leistungshalbleiterbauelement, Herstellungsverfahren dafür und Chopperschaltung mit integriertem Halbleiterbauelement

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BERRIANE R ET AL: "MOS-gated optically triggered thyristor: a new galvanically insulated high voltage integrated switch", SOLID STATE ELECTRONICS, vol. 39, no. 6, June 1996 (1996-06-01), pages 863-869, XP004007102 *
SANCHEZ J L: "LIGHT TRIGGERED THYRISTOR WITH A MOS AMPLIFYING GATE: AN EXAMPLE OF FUNCTIONALLY INTEGRATED VERTICAL HIGH VOLTAGE POWER DEVICE", PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE (ESSDERC), LEUVEN, SEPT. 14 -17, 1992, no. CONF. 22, 14 September 1992 (1992-09-14), MAES H E;MERTENS R P; VAN OVERSTRAETEN R J, pages 145 - 148, XP000357096 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114185295A (zh) * 2021-12-16 2022-03-15 广州城市理工学院 一种交互装置的电路

Also Published As

Publication number Publication date
EP0913754B1 (de) 2003-08-20
FR2770656A1 (fr) 1999-05-07
US6215289B1 (en) 2001-04-10
JPH11219222A (ja) 1999-08-10
DE69817295D1 (de) 2003-09-25
FR2770656B1 (fr) 2000-01-14
JP4106772B2 (ja) 2008-06-25

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