EP0905778A2 - Verbesserte Mehrlagenleitungsstruktur und Verfahren dafür - Google Patents

Verbesserte Mehrlagenleitungsstruktur und Verfahren dafür Download PDF

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Publication number
EP0905778A2
EP0905778A2 EP98116755A EP98116755A EP0905778A2 EP 0905778 A2 EP0905778 A2 EP 0905778A2 EP 98116755 A EP98116755 A EP 98116755A EP 98116755 A EP98116755 A EP 98116755A EP 0905778 A2 EP0905778 A2 EP 0905778A2
Authority
EP
European Patent Office
Prior art keywords
layer
conductive
dielectric
dielectric layer
low capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP98116755A
Other languages
English (en)
French (fr)
Other versions
EP0905778A3 (de
Inventor
Dirk Tobben
Peter Weigand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0905778A2 publication Critical patent/EP0905778A2/de
Publication of EP0905778A3 publication Critical patent/EP0905778A3/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
EP98116755A 1997-09-29 1998-09-04 Verbesserte Mehrlagenleitungsstruktur und Verfahren dafür Ceased EP0905778A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US939208 1992-09-01
US08/939,208 US5977635A (en) 1997-09-29 1997-09-29 Multi-level conductive structure including low capacitance material

Publications (2)

Publication Number Publication Date
EP0905778A2 true EP0905778A2 (de) 1999-03-31
EP0905778A3 EP0905778A3 (de) 2001-02-07

Family

ID=25472743

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98116755A Ceased EP0905778A3 (de) 1997-09-29 1998-09-04 Verbesserte Mehrlagenleitungsstruktur und Verfahren dafür

Country Status (6)

Country Link
US (1) US5977635A (de)
EP (1) EP0905778A3 (de)
JP (1) JPH11163142A (de)
KR (1) KR100544030B1 (de)
CN (1) CN1134837C (de)
TW (1) TW393753B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7656037B2 (en) 2005-09-21 2010-02-02 Infineon Technologies Ag Integrated circuit with improved component interconnections
US7667256B2 (en) 2005-09-21 2010-02-23 Infineon Technologies Ag Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627539B1 (en) * 1998-05-29 2003-09-30 Newport Fab, Llc Method of forming dual-damascene interconnect structures employing low-k dielectric materials
US6153512A (en) * 1999-10-12 2000-11-28 Taiwan Semiconductor Manufacturing Company Process to improve adhesion of HSQ to underlying materials
US6780783B2 (en) * 2001-08-29 2004-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of wet etching low dielectric constant materials
US20050070103A1 (en) * 2003-09-29 2005-03-31 Applied Materials, Inc. Method and apparatus for endpoint detection during an etch process
WO2017099736A1 (en) * 2015-12-09 2017-06-15 Intel Corporation Dielectric buffer layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476625A2 (de) * 1990-09-18 1992-03-25 Nec Corporation Halbleiteranordnung mit Verbindungen
EP0703611A1 (de) * 1994-08-31 1996-03-27 Texas Instruments Incorporated Verfahren zur Isolierung von Leitungen unter Verwendung von Materialien mit niedriger dielektrischer Konstante und damit hergestellte Strukturen
US5559055A (en) * 1994-12-21 1996-09-24 Advanced Micro Devices, Inc. Method of decreased interlayer dielectric constant in a multilayer interconnect structure to increase device speed performance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310700A (en) * 1993-03-26 1994-05-10 Integrated Device Technology, Inc. Conductor capacitance reduction in integrated circuits
US5548159A (en) * 1994-05-27 1996-08-20 Texas Instruments Incorporated Porous insulator for line-to-line capacitance reduction
DE69531571T2 (de) * 1994-05-27 2004-04-08 Texas Instruments Inc., Dallas Verbesserungen in Bezug auf Halbleitervorrichtungen
US5691573A (en) * 1995-06-07 1997-11-25 Advanced Micro Devices, Inc. Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines
US5847464A (en) * 1995-09-27 1998-12-08 Sgs-Thomson Microelectronics, Inc. Method for forming controlled voids in interlevel dielectric

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476625A2 (de) * 1990-09-18 1992-03-25 Nec Corporation Halbleiteranordnung mit Verbindungen
EP0703611A1 (de) * 1994-08-31 1996-03-27 Texas Instruments Incorporated Verfahren zur Isolierung von Leitungen unter Verwendung von Materialien mit niedriger dielektrischer Konstante und damit hergestellte Strukturen
US5559055A (en) * 1994-12-21 1996-09-24 Advanced Micro Devices, Inc. Method of decreased interlayer dielectric constant in a multilayer interconnect structure to increase device speed performance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7656037B2 (en) 2005-09-21 2010-02-02 Infineon Technologies Ag Integrated circuit with improved component interconnections
US7667256B2 (en) 2005-09-21 2010-02-23 Infineon Technologies Ag Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement

Also Published As

Publication number Publication date
TW393753B (en) 2000-06-11
US5977635A (en) 1999-11-02
JPH11163142A (ja) 1999-06-18
CN1134837C (zh) 2004-01-14
EP0905778A3 (de) 2001-02-07
KR19990030133A (ko) 1999-04-26
KR100544030B1 (ko) 2007-03-02
CN1213170A (zh) 1999-04-07

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