EP0861496A1 - Elektrische schalvorrichtung und anzeigevorrichtung der diese schalvorrichtung verwendet - Google Patents
Elektrische schalvorrichtung und anzeigevorrichtung der diese schalvorrichtung verwendetInfo
- Publication number
- EP0861496A1 EP0861496A1 EP97919091A EP97919091A EP0861496A1 EP 0861496 A1 EP0861496 A1 EP 0861496A1 EP 97919091 A EP97919091 A EP 97919091A EP 97919091 A EP97919091 A EP 97919091A EP 0861496 A1 EP0861496 A1 EP 0861496A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- membrane
- state
- switching device
- switching
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000012528 membrane Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 24
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000003754 machining Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 3
- 238000001393 microlithography Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002999 depolarising effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H67/00—Electrically-operated selector switches
- H01H67/22—Switches without multi-position wipers
Definitions
- the air knife capacitor thus formed has a capacity
- the force F is related to the tension applied by the following equation
- the subject of the invention is a switching device comprising at least one membrane made of material M-
- the means for switching from a state 0 to a state 1 comprise a piezoelectric layer deposited on the surface of the membrane, so as to constitute a bimetal system having two stable states 0 and 1
- the substrate can advantageously be made of silicon
- the membrane can advantageously be made of material constrained with respect to silicon, of the silica or silicon nitride type Indeed it is known to use deposition conditions, such as the material M
- the invention also relates to a display device associating a conventional matrix type liquid crystal matrix, the optical state of the pixels of which is electrically controllable and a matrix of elementary switching devices such as those described above.
- Each pixel of the active matrix is opposite the upper electrode for controlling the piezoelectric material of an elementary switching device
- FIG. 1 illustrates a switching device according to the known art, using a bimetal system
- FIG. 2 illustrates a switching device according to the invention
- FIG. 3 illustrates the piezoelectric means for controlling a switching device according to the invention
- FIG. 4 illustrates the characteristic parameters of the deformation of a pre-stressed membrane of a switching device of the invention
- FIG. 5 illustrates a top view of a switching device according to the invention, in which the membrane has openings to partially release the membrane from the substrate,
- FIG. 6 illustrates the association of a liquid crystal matrix display device and a matrix of electrical switches according to the invention, making it possible to control said device
- FIG. 7 illustrates a top view of the set of electrodes 15 ,, and 16 ,, allowing the addressing of the switches used to address a matrix of liquid crystal pixels
- the device comprises means which can advantageously be of the piezoelectric type, the transition from a stable state to another stable state being achieved in this case by a simple pulse.
- FIG. 2 illustrates such a switching device.
- a membrane 11 made of material M- ⁇ is supported by a substrate 12 made of material M2.
- This membrane is shown convex corresponding to the state known as 0, shown in solid lines and denoted 11 Q but by construction. as will be explained later, it can equally be concave and correspond to state 1 (shown in dotted lines and denoted 111)
- the membrane comprises a piezoelectric device consisting of a layer of piezoelectric material 14 inserted between electrodes 15 and 16
- the piezoelectric device is thin in front of the membrane and does little to modify the behavior of the material M-- with respect to the material M2, as illustrated in FIG. 3
- FIG. 4 illustrates the curvature of the membrane 1 1 in the presence of pre-stresses as well as the different parameters d, dg, o and hg 2 ho being representative of the difference between the convex state 0 and the concave state 1
- a layer of thermal silica is created on both sides by annealing at 950 ° C. in the presence of water vapor or at 1050 ° C. under dry oxygen.
- microlithography it is etched with HF acid or a reactive plasma, all the silica on the front face and part of that on the rear face making it possible to produce a rectangular mask later used for chemical or electronic machining of silicon.
- a lower electrode 15 is deposited for the piezoelectric device, for example made of platinum, and this is done through a resin mask which is then removed by conventional microlithography methods.
- the layer of piezoelectric material 14 is deposited by cent ⁇ fugation or any other technique of depositing in thin layers, a layer of PZT (lead titano-zirconate), which is then etched with acid type HF diluted (having protected the back side with resin)
- the PZT is crystallized and densified by rapid annealing at a temperature between 600 and 700 ° C for a short time, of the order of 2 minutes, so that the stress of the underlying layer cannot relax. finally deposits an upper electrode 16 similar to the lower electrode
- the silica membrane is thus released, to relax and take the curved shape illustrated in FIG. 2, (concave or convex shape), carrying with it the piezoelectric capacitor previously formed.
- the embodiment has been described for a switching device comprising a membrane
- the switching device comprises a matrix of elementary switches, produced collectively using all the process steps described above using suitable microlithography masks
- This type of switch matrix can advantageously be used in visualization by being coupled to a display device, of the liquid crystal matrix type, plasma screen, light-emitting diodes.
- FIG. 6 illustrates an example of a display device using a switching device according to the invention
- the display device comprises a matrix of pixels PXLIJ, comprising a common electrode 19 called the upper electrode, each pixel also comprising a electrode 20 ⁇ j called the lower
- the switching device comprises elementary membranes 11,., Supported by a substrate Each membrane 11 , is covered with an electrode 15, j , called the lower electrode, with a layer of piezoelectric material 14 , and with an electrode called superior 16 ,.
- an electrode 15, j called the lower electrode
- a layer of piezoelectric material 14 a layer of piezoelectric material 14
- an electrode called superior 16 an electrode called superior 16 .
- HERE represented a liquid crystal matrix
- FIG. 7 illustrates a top view of the assembly of the lower electrodes 15, and upper 16,. located on either side of the piezoelectric layers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9611199 | 1996-09-13 | ||
FR9611199A FR2753565B1 (fr) | 1996-09-13 | 1996-09-13 | Dispositif de commutation electrique et dispositif d'affichage utilisant ce dispositif de commutation |
PCT/FR1997/001616 WO1998011586A1 (fr) | 1996-09-13 | 1997-09-12 | Dispositif de commutation electrique et dispositif d'affichage utilisant ce dispositif de commutation |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0861496A1 true EP0861496A1 (de) | 1998-09-02 |
Family
ID=9495721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97919091A Ceased EP0861496A1 (de) | 1996-09-13 | 1997-09-12 | Elektrische schalvorrichtung und anzeigevorrichtung der diese schalvorrichtung verwendet |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0861496A1 (de) |
JP (1) | JP2000502496A (de) |
FR (1) | FR2753565B1 (de) |
WO (1) | WO1998011586A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1456699B1 (de) * | 2001-07-05 | 2008-12-31 | International Business Machines Corporation | Mikrosystemschalter |
EP1556876A1 (de) | 2002-10-29 | 2005-07-27 | Matsushita Electric Industrial Co., Ltd. | Schaltgerät, verfahren zum anlegen eines elektrisches feldes, und schaltsystem |
WO2004063090A2 (en) * | 2003-01-13 | 2004-07-29 | Triad Sensors Inc. | High displacement bistable micro actuator |
KR100645640B1 (ko) | 2003-11-03 | 2006-11-15 | 삼성전기주식회사 | 회절형 박막 압전 마이크로 미러 및 그 제조 방법 |
EP1976015B1 (de) | 2007-03-26 | 2014-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Schaltelement, Herstellungsverfahren dafür und Anzeigevorrichtung mit Schaltelement |
FR3018389B1 (fr) * | 2014-03-06 | 2017-09-01 | St Microelectronics Sa | Procede de fabrication de lamelles bistables de courbures differentes |
KR20180015682A (ko) * | 2015-06-03 | 2018-02-13 | 코닌클리케 필립스 엔.브이. | 작동 디바이스 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8103377A (nl) * | 1981-07-16 | 1983-02-16 | Philips Nv | Weergeefinrichting. |
GB2215914B (en) * | 1988-03-17 | 1991-07-03 | Emi Plc Thorn | A microengineered diaphragm pressure switch and a method of manufacture thereof |
DE3833158A1 (de) * | 1988-09-29 | 1990-04-12 | Siemens Ag | Bistabiler biegewandler |
DE4444070C1 (de) * | 1994-12-10 | 1996-08-08 | Fraunhofer Ges Forschung | Mikromechanisches Element |
-
1996
- 1996-09-13 FR FR9611199A patent/FR2753565B1/fr not_active Expired - Fee Related
-
1997
- 1997-09-12 JP JP10513325A patent/JP2000502496A/ja active Pending
- 1997-09-12 EP EP97919091A patent/EP0861496A1/de not_active Ceased
- 1997-09-12 WO PCT/FR1997/001616 patent/WO1998011586A1/fr not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
See references of WO9811586A1 * |
Also Published As
Publication number | Publication date |
---|---|
FR2753565A1 (fr) | 1998-03-20 |
WO1998011586A1 (fr) | 1998-03-19 |
FR2753565B1 (fr) | 1998-11-27 |
JP2000502496A (ja) | 2000-02-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 19980504 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE GB IT NL |
|
17Q | First examination report despatched |
Effective date: 20000425 |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: THALES |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20011208 |