EP0816880A2 - Procédé pour fabriquer un substrat de guide d'ondes lumineuses - Google Patents

Procédé pour fabriquer un substrat de guide d'ondes lumineuses Download PDF

Info

Publication number
EP0816880A2
EP0816880A2 EP97304478A EP97304478A EP0816880A2 EP 0816880 A2 EP0816880 A2 EP 0816880A2 EP 97304478 A EP97304478 A EP 97304478A EP 97304478 A EP97304478 A EP 97304478A EP 0816880 A2 EP0816880 A2 EP 0816880A2
Authority
EP
European Patent Office
Prior art keywords
optical waveguide
ridge
grinding
single crystal
set forth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97304478A
Other languages
German (de)
English (en)
Other versions
EP0816880A3 (fr
Inventor
Minoru Imaeda
Tatsuo Kawaguchi
Takahiro Inoue
Mawatomo Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of EP0816880A2 publication Critical patent/EP0816880A2/fr
Publication of EP0816880A3 publication Critical patent/EP0816880A3/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12197—Grinding; Polishing

Definitions

  • the present invention relates to a process for producing optical waveguide devices to be used as a second harmonic generation device of a quasi-phase matching type and an optical modulator.
  • a so-called ridge-shaped optical waveguide is sought as an optical modulator, optical switch element, etc.
  • a second harmonic generating (SHG) device of a quasi-phase matched (QPM) type using an optical waveguide made of lithium niobate or lithium tantalate single crystal in which a periodical domain inversion structure is formed has been considered.
  • the second harmonic generation device may find a variety of application fields such as optical disc memories, medical applications, photochemical applications, various optical measurements, etc.
  • optical waveguides have been formed in the optical waveguide type modulator or the SHG devices using lithium niobate, and quartz glass waveguides on silicon substrate bodies.
  • optical waveguides having a ridge-shaped structure have been formed by etching such as RIE (reactive ion etching) . More specifically, it is a common knowledge that such a ridge-shaped structure is formed by transferring a mask pattern on a substrate workpiecen by photolithography technique, and removing a portion of the optical waveguide-forming layer other than the mask pattern by ion etching or the like.
  • a ridge-shaped optical waveguide 27 is formed by etching the epitaxial film 22. Since the epitaxial film 22 is removed up to a given depth, excluding a portion not masked, a resulting epitaxial film 24 has a reduced thickness as shown in Fig. 3(b).
  • the substrate body 21 is likely to be damaged so that a work damaged layer may be formed in the most important optical waveguide 27 through which light is to be passed. Since the thickness of the work damaged layer amounts to as much as around a few ⁇ m, characteristics of the optical waveguide, for example, refractive index, change due to influences of the work damaged layer. As a result, there is a problem that actual characteristics of the optical waveguide device produced differ from those grasped in the simulation. Further, it has come out that since the stability of the optical waveguide decreases, an propagation loss and an extinction ratio of the optical waveguide unfavorably are deteriorated.
  • the ridge-shaped optical waveguide 27 projects upwardly from the main plane 24a of the epitaxial film 24.
  • d and W are a height and a width of the ridge-shaped optical waveguide 27, respectively, to project the ridge-shaped optical waveguide 27 at a large height, it is necessary to etch a surrounding portion of the ridge-shaped optical waveguide 27 as deep as possible.
  • a ratio in etched degree between the substrate body and the mask is ordinarily in a range of 2:1 to 5:1, a mask 23 having a correspondingly increased thickness needs to be used so as to deeply etch the surrounding portion of the ridge-shaped optical waveguide 27. If such a thick mask 23 is used, the etched rate around the mask then decreases, so that a ridge angle " ⁇ " becomes much smaller than 90°.
  • the present invention is directed to a process for producing an optical waveguide substrate comprising a ridge-shaped structural portion containing at least an optical waveguide, said process comprising the steps of forming an optical waveguide-forming layer on a surface of a substrate body to form a substrate workpiece, and forming said ridge-shaped structural portion at said substrate workpiece by grinding.
  • the present inventors have discovered that when the above high accuracy grinding step was applied to refractive index controlled optical waveguide substrate each having a ridge-shaped structure, ridge-shaped optical waveguides could be worked and formed at a surprising high working accuracy with small residual strain by machining.
  • the present inventors confirmed a surprising effect that when the optical waveguides having the ridge-shaped structure were formed by grinding, an area where a work damaged layer or residual strain was limited to a degree of not more than 0.1 ⁇ m.
  • the inventors have accomplished the present invention based on the above discovery.
  • a variety of grinding devices may be used in the present invention. Then, the present inventors discovered that a grinder so-called a high grade micro-grinder can be particularly favorably used because of its high mechanical accuracy.
  • a grinding tool using a resin-based binder as a binder for diamond abrasive which grinding tool is called resinoid grinding tool may be particularly favorably used. It is considered that if a metal bonded grinding tool is used in which a metal is used as a binder, cracking or chipping is formed at an upper portion of the optical waveguide is formed so that the optical waveguide is difficult to be excellently worked. This is considered to be because since the diamond abrasive is firmly bonded, an upper portion of the ridge-shaped structure is slightly cracked or chipped upon application of very small impact or stress upon an edge portion of the ridge-shaped structure. Further, the substrate may be excellently ground by a resinoid and metal bonded grinding tool in which a resin and a metal are used as a mixture as a binder.
  • the ridge-shaped structural body can be obtained by working at an extremely high accuracy in a range of ⁇ 0.2 ⁇ m relative to the width (width of the ridge) of the intended ridge-shaped structural portion.
  • the optical waveguide can be realized according to a theoretical design. In other words, this means that optical devices having effects not substantially different from simulation results obtained by a computer based on characteristics of the materials, such as refractive index, and the model of the optical waveguide can be obtained.
  • the present invention is an epoch-making producing process from this point of view.
  • the ridge-shaped optical waveguides having a trapezoidal cross sectional shape could be obtained, while the side faces of the optical waveguide could not be each worked at an inclination angle of about 70° to 80° only.
  • the ridge-shaped optical waveguides having a rectangular cross section and having the side faces at an angle of 90° (vertical) relative to the top surface of the substrate body can be stably formed.
  • the optical waveguide substrate can be produced in a sufficiently shorter time by rotating the grinding tool at a high speed and feeding the grinding tool at a high speed, as compared with the reactive ion etching process. Furthermore, a plurality of ridge-shaped structural portions can be simultaneously formed over the entire surface of the substrate workpiece having a wafer shape by using a grinder in which plural rows of the grinding tools are arranged. By so doing, plural chips can be simultaneously formed by working on a single wafer in a short time.
  • the ridge-shaped structural portion of the substrate can be controlled in its thickness direction by chemical-mechanical polishing ordinarily used in polishing silicon wafers, etc.
  • the thickness of the single crystal film grown by the liquid phase epitaxial growth varies in a range of ⁇ 1.5 ⁇ m if the thickness is 15 ⁇ m. Therefore, the surface of the optical waveguide-forming layer formed on the substrate body by the liquid phase epitaxial process is finely ground to finally make the thickness of the optical waveguide-forming layer, for example, 11 ⁇ 0.2 ⁇ m.
  • an ELID grinding in which grinding is effected while dressing is being effected under electrolysis action may be used.
  • the ELID grinding is a working process in which the grinding tool is subjected to a grinding operation while being dressed by the electrolysis action to improve and stabilize grinding performance.
  • the ELID grinding process is described in "TORYUU KAKOU GAKKAISHI", Vol. 39, No. 5, September, 1995.
  • the present inventors discovered that the thickness and the surface roughness of the optical waveguide-forming layer can be finished to 10 ⁇ 0.2 ⁇ m and 10 ⁇ , respectively, with surprising accuracy by using the chemical-mechanical polishing as a final surface polishing method.
  • the thickness of the optical waveguide-forming layer can be worked to an intended thickness at an extremely high accuracy in a range of ⁇ 0.2 ⁇ m or less. That is the ridge-shaped optical waveguide substrates having an ideal design can be mass-produced.
  • the above process is a working process particularly excellent from the standpoint of the mass productivity.
  • a resinoid grinding tool is preferred as the grinding tool to be used.
  • the particle diameter of the grinding tool is preferably 2 ⁇ m to 3 ⁇ m. If the particle diameter is less than 1 ⁇ m, the grinding power of the grinding tool is small, and the grinding tool is likely to be clogged. To the contrary, if the particle diameter is not less than to 4 ⁇ m, pitching is likely to occur and the yield decreases.
  • the concentration of the grinding tool is preferably 75 to 200.
  • the rotation speed of the grinding tool is preferably 5000 rpm or more, preferably 20000 rpm or more.
  • the feeding speed of a blade is preferably 1-100 mm/min., more preferably 10-30 mm/min.
  • the vibration of a spindle not more than 0.1 ⁇ m.
  • Figs. 1(a) and 1(b) are front views for illustrating substrate workpieces 5A and 5B to be worked, respectively.
  • a substrate body 1 made of a ferroelectric optical single crystal is prepared. Main planes of the substrate body 1 are denoted by 1a, 1d, whereas side planes thereof denoted by 1c, 1d.
  • an optical waveguide layer 2 is formed on one of the above main faces la of the substrate body 1.
  • the optical waveguide layer 2 may be made of an epitaxial film or a vapor deposition film.
  • the refractive index of the optical waveguide layer 2 is greater than that of the substrate body 1.
  • an intermediate layer 4 and an optical waveguide layer 3 are successively formed on the main plane la of the substrate body 1 in this order.
  • Each of the intermediate layer 4 and the optical waveguide layer 3 may be made of an epitaxial film or an vapor deposition film.
  • the refractive index of the optical waveguide layer 3 is made larger than that of the intermediate layer 4.
  • the refractive index can be controlled by the composition of intermediate layer.
  • each of the optical waveguide layers 2, 3 and the intermediate layer 4 is preferably finely surface polished to a controlled thickness in a given range as mentioned above.
  • the workpiece 5B (5A) is ground in a direction parallel to an elongate side face 1b.
  • a rotary 6 provided with a grinding blade is used and advanced as shown by an arrow 8, while being rotated as shown by an arrow 7.
  • the substrate body 1, the intermediate body 4 and the optical waveguide 3 are simultaneously ground.
  • the rotary body 6 is advanced in a direction parallel to the side face 1b.
  • the substrate workpiece 5B (5A) is ground along broken lines 9. At that time, portions other than a ridge-shaped structural portion to be formed at the substrate workpiece are removed by gradually grinding said portions in a direction from each of the side faces 1b to the broken line 9 through repeatedly reciprocating the rotary body 6 in directions parallel to the side face 1b number times.
  • optical waveguide substrates 11A and 11B shown in Figs. 2(a) and 2(b), respectively are prepared.
  • a ridge-shaped structural portion 12 is projected from a main plane 10 of the substrate body 10 of the substrate body 1.
  • a base portion 16 of the ridge-shaped structural body 12 is made of a material constituting the substrate body 1, preferably a ferroelectric optical single crystal, and an optical waveguide 13 is formed on the base portion 16.
  • Side faces 16a of the base portion 16 extend substantially vertically to the main plane 10 of the substrate body.
  • the side faces 16a continue to respective side faces 13b of the optical waveguide 13.
  • An upper face 13a of the optical waveguide 13 is substantially parallel to the main plane 10 of the substrate body 1.
  • an intermediate layer 15 is formed on a main plane 10 of the substrate body 1, and a ridge-shaped structural body 18 is formed such that it is projected from a central portion of the intermediate layer 15.
  • a base portion 17 of the ridge-shaped structural portion 18 is made of a material constituting the intermediate layer 15, and an optical waveguide 13 is formed on the base portion 17.
  • Side faces 17a of the base portion 17 extend substantially vertical to the main plane 10 of the substrate body 1, and the side faces 17a of the base portion 17 continue to respective side faces 13b of the optical waveguide 13.
  • a light beam 14 being propagated through the optical waveguide has an almost circular section with no strain of the light beam. Since the side faces 13b of the optical waveguide 13 are parallel to each other, the sectional shape of the optical waveguide 13 is square or rectangular. Accordingly, symmetry of the light beam 4 is high, and its propagation efficiency becomes maximum.
  • Optical modulators, optical switch elements, etc. for modifying intensity and phase of the light beam can be produced by using the above optical waveguide substrates.
  • shapes of electrodes for modifying the light beam are not particularly limited.
  • the material of the substrate body is particularly preferably an oxide single crystal.
  • the oxide single crystal one or more kinds of single crystals selected from the group consisting of a single crystal of lithium niobate, a single crystal of lithium tantalate and a single crystal of a lithium niobate-lithium tantalate solid solution are preferably used.
  • one or more kinds of the oxide single crystals selected from the group consisting of lithium potassium niobate and lithium tantalate are used as a preferred example of the above oxide single crystal.
  • d/W is preferably not less than 2, because in this case, an electric field applied to the optical waveguide in the ridge-shaped structural body is unlikely to spread toward the substrate body. If d/W is not more than 100, the optical waveguide substrate having the ridge-shaped structural portion is easily handled, and the ridge-shaped structural portion is unlikely to be broken during the transportation of the substrate.
  • a substrate workpiece as shown in Fig. 1(b) is produced, and a ridge-shaped optical waveguide is formed at this substrate workpiece. That is, an intermediate layer 4 is formed from a single crystal of lithium niobate-lithium tantalate solid solution onto a single crystal substrate body 1 of lithium niobate in the form of a 3-inch wafer size.
  • the substrate body is held by a holder made of platinum, at its three outer peripheral portions which would constitute parts of a substrate, and a film was formed on the substrate body by horizontally dipping the substrate body in a melt.
  • the composition of the melt charged was 16 mol% LiNbO 3 -4 mol% LiTaO 3 -80 mol% LiVO 3 .
  • the saturation temperature of this melt was about 1050°C.
  • This melt was held and completely homogeneously melted at 1200°C, which was cooled down to 920°C and held at this temperature for more than 24 hours. During this, an oversaturated amount of LiNbO 3 was precipitated as a solid phase, whereas a liquid phase became completely saturated.
  • the melt was cooled to 910°C, and the wafer was immersed into the liquid phase, thereby forming a film of the single crystal on the substrate body.
  • the time period during which the wafer contacted the melt was set at 16 minutes.
  • a thin film of the single crystal of the lithium niobate-lithium tantalate solid solution having the thickness of about 20 ⁇ m was formed on the wafer. Examination of the thickness distribution of the single crystal thin film on the surface of the wafer revealed that the film thickness was 20 ⁇ m ⁇ 1 ⁇ m.
  • an optical waveguide-forming layer 3 was formed of a single crystal of lithium niobate according to the liquid phase epitaxial process.
  • the composition of a melt charged was 20 mol% LiNbO 3 -80 mol% LiVO 3 .
  • the saturated temperature of the melt was about 960°C. This melt was held, and completely homogeneously melt at 1150°C, which was cooled to 905°C, and held at this temperature for not less than 24 hours.
  • the melt was cooled to 900°C, and the wafer was immersed into the liquid phase, thereby forming a film of the single crystal on the above film.
  • the time period during which the wafer contacted the melt was set at 10 minutes.
  • a thin film of a single crystal of lithium niobate having the thickness of about 10 ⁇ m was formed on the wafer. Examination of the thickness distribution of the single crystal thin film on the surface of the wafer revealed that the film thickness was 10 ⁇ m ⁇ 1 ⁇ m.
  • the intermediate layer having the thickness of 15 ⁇ m and the optical waveguide-forming layer 3 having the thickness of 5 ⁇ m were formed.
  • a ridge-shaped structural body 18 having a width of 5 ⁇ m and a height of 10 ⁇ m was formed at the surface of the substrate by grinding with a micro-grinder. Then, about 20 devices each having a length of 20 mm and a width of 5 mm were obtained by working the 3 inch-wafer with use of a resinoid grinding tool having an outer diameter of 100 mm, a thickness of 1.2 mm and a grain diameter of 2-3 ⁇ m. A CUPTRUER was used to dress the grinding tool and true its shape, and then the grinding tool was subjected to the above grinding working at 8000 rpm, a feed speed of 20 mm/min.
  • the time required to form the ridge-shaped structural portion was 30 minutes.
  • the thickness of the work damaged layer was about 0.05 ⁇ m.
  • Evaluation of the thus obtained ridge-shaped thin film optical waveguide revealed that the propagation loss and the extinction ratio were about 0.2 dB/cm and not less than 40 dB at a wavelength of 0.84 ⁇ m, respectively.
  • Example 2 In the same way as in Example 1, an intermediate layer 4 and an optical waveguide-forming layer 3 were successively formed on a surface of a substrate body 1 made of a single crystal of lithium niobate in this order. Then, a ridge-shaped structural portion having a width of 5 ⁇ m and a height of 5 ⁇ m was formed by using argon gas according to an ion milling process.
  • the time required to form the ridge-shaped structural portion was 4 hours.
  • the thickness of the work damaged layer was about 1 ⁇ m.
  • the ridge angle of the thus formed ridge-shaped structural body was about 80°.
  • Evaluation of this ridge-shaped thin film optical waveguide revealed that the propagation loss and the extinction ratio were about 3 dB/cm and not less than 25 dB at a wavelength of 0.84 ⁇ m, respectively. Further, the optical waveguide was optically damaged with 2 mW emitted light, thereby disturbing the light beam pattern.
  • a substrate workpiece as shown in Fig. 1(a) was produced, and a ridge-shaped optical waveguide was formed according to the present invention. That is, a film of titanium was formed, in a thickness of about 500 angstroms, on a substrate body 1 made of lithium niobate and having a 3-inch wafer size by the vapor deposition process. This titanium film was thermally treated at 1050°C for 10 hours. Thereby, a planar titanium diffused optical waveguide-forming layer 2 was formed.
  • a ridge-shaped structural body 12 having a width of 10 ⁇ m and a height of 20 ⁇ m was formed at the surface of the substrate by grinding with a micro-grinder (See Fig. 2(a)). Then, about 20 devices each having a length of 20 mm and a width of 5 mm were obtained by working the 3 inch-wafer with use of a resinoid grinding tool having an outer diameter of 100 mm, a thickness of 1.2 mm and a grain diameter of 2-3 ⁇ m. The CUPTRUER was used to dress the grinding tool and true its shape, and then the grinding tool was subjected to the above grinding working at 8000 rpm, a feed speed of 20 mm/min.
  • the time required to form the ridge-shaped structural portion was 30 minutes.
  • the thickness of the work damaged layer was about 0.05 ⁇ m.
  • Evaluation of the thus obtained ridge-shaped thin film optical waveguide 13 revealed that the propagation loss and the extinction ratio were about 0.2 dB/cm and not less than 40 dB at a wavelength of 1.3 ⁇ m, respectively.
  • a planar titanium diffused optical waveguide layer 2 was formed on a surface of a substrate body 1 made of a single crystal of lithium niobate. Then, a ridge-shaped structural portion having a width of 5 ⁇ m and a height of 5 ⁇ m was formed by using argon gas according to an ion milling process.
  • the time required to form the ridge-shaped structural portion was 5 hours.
  • the thickness of the work damaged layer was about 0.5 ⁇ m.
  • the ridge angle of the thus formed ridge-shaped structural body was about 75°. Evaluation of this ridge-shaped thin film optical waveguide revealed that the propagation loss and the extinction ratio were about 4 dB/cm and not less than 20 dB at a wavelength of 1.30 ⁇ m, respectively.
  • the optical waveguide substrate with the ridge-shaped structural portion containing at least the optical waveguide when the optical waveguide substrate with the ridge-shaped structural portion containing at least the optical waveguide is produced, a work damaged layer can be prevented from being formed in the optical waveguide substrate, and the ridge-shaped structural portions can be mass produced in a shorter time. Further, the side faces of the ridge-shaped structural portions can be made almost vertical to the surface of the substrate body.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
EP97304478A 1996-06-26 1997-06-25 Procédé pour fabriquer un substrat de guide d'ondes lumineuses Withdrawn EP0816880A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP165627/96 1996-06-26
JP8165627A JPH1010348A (ja) 1996-06-26 1996-06-26 光導波路デバイスの製造方法

Publications (2)

Publication Number Publication Date
EP0816880A2 true EP0816880A2 (fr) 1998-01-07
EP0816880A3 EP0816880A3 (fr) 1998-10-21

Family

ID=15815964

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97304478A Withdrawn EP0816880A3 (fr) 1996-06-26 1997-06-25 Procédé pour fabriquer un substrat de guide d'ondes lumineuses

Country Status (3)

Country Link
US (1) US6129864A (fr)
EP (1) EP0816880A3 (fr)
JP (1) JPH1010348A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0828168A2 (fr) * 1996-09-06 1998-03-11 Ngk Insulators, Ltd. Dispositif de guides d'ondes optiques, son procédé de fabrication et dispositif pour la génération de seconde harmonique
EP0936481A2 (fr) * 1998-02-17 1999-08-18 Ngk Insulators, Ltd. Procédé pour le traitement d'un substrat de matériau monocristallin ferroélectrique
EP1014121A2 (fr) * 1998-12-21 2000-06-28 Lsi Logic Corporation Guide d'onde défléchissant sur puce à monocouche horizontal et méthode de damascène pour sa fabrication
EP1473576A1 (fr) * 2003-05-02 2004-11-03 ThreeFive Photonics B.V. Guide d'onde optique intégré

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002365680A (ja) * 2001-06-05 2002-12-18 Ngk Insulators Ltd 三次元光導波路、光導波路デバイス、高調波発生装置および三次元光導波路の製造方法
CN100541269C (zh) * 2004-09-29 2009-09-16 日本碍子株式会社 光功能器件
JP4828464B2 (ja) * 2007-04-03 2011-11-30 住友大阪セメント株式会社 加工用ブレードの製造方法及び加工用ブレード、並びにそれを用いた光学素子の製造方法
US7589886B1 (en) 2008-08-12 2009-09-15 Hc Photonics Corp. Wavelength converter structure and method for preparing the same
US8201947B2 (en) * 2008-12-10 2012-06-19 Hc Photonics Corp. Wavelength converter and green light source and projection apparatus using the same
CN104503024B (zh) * 2014-12-20 2017-03-08 吉林大学 一种带有斜面耦合端口的聚合物光波导的制备方法
EP4066027A4 (fr) 2019-11-27 2023-12-06 Hyperlight Corporation Dispositifs électro-optiques disposant d'électrodes spécialisées
US11940713B2 (en) * 2020-11-10 2024-03-26 International Business Machines Corporation Active electro-optic quantum transducers comprising resonators with switchable nonlinearities

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409339A1 (fr) * 1989-07-20 1991-01-23 Koninklijke Philips Electronics N.V. Cristaux de niobat de potassium lithium
US5363462A (en) * 1993-07-02 1994-11-08 Eastman Kodak Company Multilayer waveguide using a nonlinear LiNb Ta1-x O3 optical film
JPH06317718A (ja) * 1993-05-07 1994-11-15 Japan Steel Works Ltd:The リッジ型光導波路の製造方法
EP0803747A2 (fr) * 1996-03-29 1997-10-29 Ngk Insulators, Ltd. Procédé de fabrication d'un guide d'onde optique dans un substrat

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4228853C2 (de) * 1991-09-18 1993-10-21 Schott Glaswerke Optischer Wellenleiter mit einem planaren oder nur geringfügig gewölbten Substrat und Verfahren zu dessen Herstellung sowie Verwendung eines solchen
US5759481A (en) * 1994-10-18 1998-06-02 Saint-Gobain/Norton Industrial Ceramics Corp. Silicon nitride having a high tensile strength

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409339A1 (fr) * 1989-07-20 1991-01-23 Koninklijke Philips Electronics N.V. Cristaux de niobat de potassium lithium
JPH06317718A (ja) * 1993-05-07 1994-11-15 Japan Steel Works Ltd:The リッジ型光導波路の製造方法
US5363462A (en) * 1993-07-02 1994-11-08 Eastman Kodak Company Multilayer waveguide using a nonlinear LiNb Ta1-x O3 optical film
EP0803747A2 (fr) * 1996-03-29 1997-10-29 Ngk Insulators, Ltd. Procédé de fabrication d'un guide d'onde optique dans un substrat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 095, no. 002, 31 March 1995 -& JP 06 317718 A (JAPAN STEEL WORKS LTD:THE), 15 November 1994, *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0828168A2 (fr) * 1996-09-06 1998-03-11 Ngk Insulators, Ltd. Dispositif de guides d'ondes optiques, son procédé de fabrication et dispositif pour la génération de seconde harmonique
EP0828168A3 (fr) * 1996-09-06 1998-11-18 Ngk Insulators, Ltd. Dispositif de guides d'ondes optiques, son procédé de fabrication et dispositif pour la génération de seconde harmonique
US5991067A (en) * 1996-09-06 1999-11-23 Ngk Insulators, Ltd. Optical waveguide substrate, optical waveguide device, second harmonic generation device, and process of producing optical waveguide substrate
EP0936481A2 (fr) * 1998-02-17 1999-08-18 Ngk Insulators, Ltd. Procédé pour le traitement d'un substrat de matériau monocristallin ferroélectrique
EP0936481A3 (fr) * 1998-02-17 2000-10-25 Ngk Insulators, Ltd. Procédé pour le traitement d'un substrat de matériau monocristallin ferroélectrique
US6687448B2 (en) 1998-02-17 2004-02-03 Ngk Insulators, Ltd. Method of processing a substrate made of a ferroelectric single crystalline material
EP1014121A2 (fr) * 1998-12-21 2000-06-28 Lsi Logic Corporation Guide d'onde défléchissant sur puce à monocouche horizontal et méthode de damascène pour sa fabrication
EP1014121A3 (fr) * 1998-12-21 2003-05-14 Lsi Logic Corporation Guide d'onde défléchissant sur puce à monocouche horizontal et méthode de damascène pour sa fabrication
EP1473576A1 (fr) * 2003-05-02 2004-11-03 ThreeFive Photonics B.V. Guide d'onde optique intégré

Also Published As

Publication number Publication date
EP0816880A3 (fr) 1998-10-21
JPH1010348A (ja) 1998-01-16
US6129864A (en) 2000-10-10

Similar Documents

Publication Publication Date Title
US6257224B1 (en) Process for working a preform made of an oxide single crystal, and a process for producing functional devices
US6129864A (en) Process for producing optical waveguide substrate
CN111775354B (zh) 一种钽铌酸钾单晶基片元件的加工制作方法
RU2368486C2 (ru) Автоматический способ полировки для механических деталей из титана или титанового сплава
WO2006041172A1 (fr) Substrat de guide d’onde optique et dispositif générateur d’harmoniques
JPH0443228B2 (fr)
TW200911462A (en) Superhard cutters and associated methods
JP2003172839A (ja) レジンダイヤモンドブレード及び該ブレードを使用した光導波路の製造方法
CN109149047A (zh) 一种片上低损耗超细脊状波导的制备方法
US5008513A (en) Shaping of bonded abrasive products
EP1129817B1 (fr) Procédé et dispositif pour l'usinage de micro rainures en V
CN110133798A (zh) 采用金刚石划片机制备脊形光波导的方法
US7290328B2 (en) Method of manufacturing optical modulator
CN111558851B (zh) 一种研磨方法与研磨装置
JP2003107545A (ja) リッジ型光導波路素子の製造方法
JP3849996B2 (ja) 単結晶光学素子の製造方法
CN113285201B (zh) 一种微米级矩形波导的制备方法及系统
JP2002501468A (ja) エッチング方法
LU501074B1 (en) Method for processing single crystal substrate element of potassium tantalum-niobate
JPH06317718A (ja) リッジ型光導波路の製造方法
JPH03192308A (ja) 光導波路基板の研削切断方法
JP3312187B2 (ja) 光部品加工方法
JP2021152579A (ja) 高調波発生素子の製造方法
RU2024397C1 (ru) Способ изготовления алмазных вставок
Atherton Optics for the national ignition facility

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

17P Request for examination filed

Effective date: 19981223

AKX Designation fees paid

Free format text: DE FR GB

17Q First examination report despatched

Effective date: 20040130

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20040610