EP0782769A1 - Composant a semi-conducteur pouvant etre commande - Google Patents

Composant a semi-conducteur pouvant etre commande

Info

Publication number
EP0782769A1
EP0782769A1 EP95934099A EP95934099A EP0782769A1 EP 0782769 A1 EP0782769 A1 EP 0782769A1 EP 95934099 A EP95934099 A EP 95934099A EP 95934099 A EP95934099 A EP 95934099A EP 0782769 A1 EP0782769 A1 EP 0782769A1
Authority
EP
European Patent Office
Prior art keywords
zone
electrode
anode
semiconductor component
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95934099A
Other languages
German (de)
English (en)
Inventor
Heinrich Schlangenotto
Marius FÜLLMANN
Jacek Korec
Alexander Bodensohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mercedes Benz Group AG
Original Assignee
Daimler Benz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daimler Benz AG filed Critical Daimler Benz AG
Publication of EP0782769A1 publication Critical patent/EP0782769A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Definitions

  • the invention relates to a semiconductor component that can be controlled on the anode side, the semiconductor body of which has a multiplicity of juxtaposed, parallel-connected unit cells with a thyristor structure, and to bidirectional semiconductor switches with such a semiconductor component that can be controlled on the anode side.
  • Bidirectional semiconductor components which can be switched on and, if possible, also switched off by a control signal in both polarity directions of the main electrodes, are very advantageous for many AC applications.
  • a frequently used component of this type is the triac, which contains two thyristor structures arranged antiparallel and can be switched on by gate current regardless of the sign of the applied voltage. The triac cannot be switched off via the gate, but only by reversing the polarity of the main electrodes.
  • TRIMOS MOS triac
  • MOS triac a lateral component which consists of two DMOS transistors arranged in mirror images, the gate electrodes of which are connected to one another.
  • the voltage range is limited by the breakdown voltage of the gate oxide and typically only reaches up to about 50 V. If the gate electrodes are separated from one another and controlled individually, voltages up to about 300 V can be achieved. It has a favorable effect that the component works like an IGBT at higher currents, so that the on-resistance is reduced by conductivity modulation.
  • a bilateral switching device with a thyristor structure and a lateral structure known as BEST (bilateral emitter switched thyristor), was presented at the International Electron Device Meeting IEDM 1992 (IEDM'92 conference volume, pp. 249 - 252).
  • the blocking capacity of the component was less than 70 V.
  • the characteristics are comparable to those of the TRIMOS.
  • the lateral structure of these switching elements not only limits the voltage range but also the switchable current.
  • a separate MOS gate is provided for each current direction, which is controlled by the cathode electrode of the respective current direction. This is disadvantageous because of the effort for the driver electronics. Such a concept is unsuitable for vertical bidirectional components.
  • the usual power components such as the MOSFET, the insulated-gate bipolar transistor or IGBT, the normal bipolar transistor and the (GTO) thyristor are driven from the cathode and require a positive control voltage for switching on.
  • a bidirectional switch which can be connected to a fixed main electrode based on a (relatively small) gate signal, a component that can be activated on the anode side is required in addition to a conventional component that can be activated on the cathode side.
  • components can be controlled from the usual structures mentioned, which can be controlled on the anode side.
  • these have the disadvantage that they cannot be integrated together with the usual u. a.
  • the weakly doped base for receiving the voltage has the reverse conduction type, namely p-conduction.
  • a second disadvantage of these components which can be controlled on the anode side is that the gate signal for switching must have the opposite polarity as for the normal one: a negative voltage at the gate is required for switching on.
  • a bidirectional switch with such individual components thus requires control signals to depend on the current direction, so that u. a. the control signal changes at zero current crossing. As a result, more complex driver electronics are required.
  • an inverse component is obtained which can be controlled from the anode side.
  • This component like the usual components, is switched on by positive gate voltage and switched off by removing or reversing the gate signal. Since it contains a weakly doped p-base zone for receiving the voltage, it is not suitable for monolithic integration together with conventional components that have transistor or thyristor structures.
  • the invention is based on the general problem of creating a bidirectionally operable component which can be switched on and off by MOS gate and is suitable for a larger voltage and current range than the known bidirectional components which can be switched on and off, and ⁇ sen switching behavior is stable.
  • the component should be controllable for both current directions from the same main electrode, with the same polarity of the control pulse.
  • a partial problem of the invention is the creation of a is controllable by the An ⁇ odenseite forth MOS device, which comprise together with herkömml i ⁇ chen ⁇ components, the transistor or thyristor inte ⁇ grierbar.
  • Such a component which can be actuated on the anode side is also important per se since it can then be produced using a technology used in conventional components.
  • the component should be able to be switched on by a positive control voltage (with respect to the anode) and should be able to be switched off by removing or reversing the control voltage.
  • a semiconductor component of the type described in the introduction in that on a weakly doped n-base zone, p-zones with higher doping on both sides than p-base zone and p- Border the emitter zone and the p-base zone is followed by a highly doped n-emitter zone, which is contacted with a cathode electrode, that in the p-emitter zone is a first n-channel MOS field effect transistor, which is connected in series with the thyristor structure by a floating electrode is that the drain electrode of the first MOS field-effect transistor is provided with an outer anode electrode which has no contact with the p-emitter zone and that between the n-base zone and the drain zone of the first MOS field-effect transistor a second n- Channel MOS field effect transistor is integrated.
  • This semiconductor component can be integrated together with other components known per se in order to generate certain electrical functions, in particular in order to produce a bidirectionally switchable component with only one gate, which is
  • the isolated gate of the second MOS field-effect transistor which is located above the p-region between the n-base and n + region, is connected to the outer anode in a preferred embodiment. Since the component described above is a special type of inverted cascode-switched MOS thyristor, it is abbreviated to ICMT below.
  • the MOS field effect transistor is referred to below as a MOSFET.
  • the ICMT is an inverse component, it has a structure with the weakly doped n-base zone and the two higher-doped p-zones adjoining it as well as the subsequent n + zones which largely corresponds to that of corresponds to conventional transistor or thyristor components.
  • the component that can be controlled on the anode side can therefore be easily integrated on a semiconductor chip together with conventional components.
  • the ICMT can be economically manufactured using the technologies used in common components.
  • the subdivision into unit cells is carried out by trough-shaped formation of the p-emitter zone, that at least one side of two n + zones are embedded in the p-emitter zone parallel to the edge thereof, at a distance from one another, that the n + zones with the p-region between them of the p-emitter zone and an insulated gate electrode arranged above them form the first n-channel MOS field-effect transistor, that one of the edges of the trough-shaped p-emitter zone adjacent n + region and the n-base zone appearing on the surface together with the region between them the p-emitter zone and a gate electrode arranged above form the second n-channel MOS field effect transistor that the other n + region and the p-type emitter zone having a common floating electrode, and that the edge adjacent n + region to the outer anode electrode ver ⁇ is prevented that no contact with the p-type emitter zone has.
  • An ICMT of the type described above can be implemented with both vertical and lateral thyristor structures.
  • the n-emitter zone, the p-base zone, the n-base zone, the p-emitter zone and the anode contact are arranged one above the other, the cathode contact connected to the n-emitter zone on the lower boundary plane and the anode electrode and the Gate electrode are arranged on the upper delimitation plane of the semiconductor body.
  • the weakly doped base zone is arranged on a substrate from which it is separated by an insulator layer or a pn junction.
  • the p-base zone and the p-emitter zone are embedded in the n-type base region in a trough-like manner, at a lateral distance from one another given the ability to block.
  • the n-emitter zone is embedded in the p-base zone and the source and drain zones of the first MOS field-effect transistor are embedded in the p-emitter zone.
  • the series thyristor In order for the component to switch on when the first MOSFET is switched on and a negative voltage is applied to the cathode, the series thyristor must be fired.
  • the firing of the thyristor can be achieved in that it is designed to be lockable per se in the switching direction.
  • the thyristor preferably has a forward blocking capability, and according to the invention it is then equipped with a special device for firing through the anode-side gate without access to the n- and p-base zone.
  • an ignition arrangement consists in that an ignition region is arranged in the semiconductor body at a greater distance from the surface area with the unit cells or by interrupting the p-emitter zone, consisting of a p-emitter zone with the adjacent n-base zone, the adjoining p-base zone and the subsequent n-emitter zone, the p-emitter zone being provided with an ignition gate contact and containing an n + zone, the con- is connected to the floating electrode, but does not short-circuit the pn junction between the p-emitter zone and the embedded n + zone in the ignition region. With the aid of this ignition range, the semiconductor component can be switched on and off by the gate.
  • a surface channel zone is provided at the edge of the semiconductor body, which connects the p-emitter zone to the p-channel zone, but is interrupted in the switched-off state by the voltage which is established at a MOS gate .
  • This semiconductor component which can be switched on and off by MOS gate is described in claim 7.
  • a preferred lateral embodiment of the semiconductor component which can be controlled on the anode side and can be switched on and off by the MOS gate is described in claim 8.
  • a bidirectional semiconductor switch is designed such that a semiconductor component of the type described above which can be driven on the anode side is arranged in a hybrid circuit together with a semiconductor component which is known per se and can be controlled on the cathode side.
  • the anode connection of the semiconductor component which can be controlled on the anode side and the cathode connection of the semiconductor component which can be controlled on the cathode side form a common first main electrode and the cathode of the semiconductor component which can be controlled on the anode side and the anode of the semiconductor component which can be controlled on the cathode side form a second main electrode connected.
  • the gate electrodes of the two semiconductor components are preferably connected to form a common gate electrode.
  • a monolithically integrated, bidirectionally switchable semiconductor component is designed according to the invention in such a way that unit cells of the semiconductor component of the type described above, which can be driven on the anode side, are arranged in a semiconductor body with unit cells of a semiconductor component which can be driven on the cathode side, and that the unit cells of the semiconductor component which can be controlled on the anode side are arranged in a first The surface area and the unit cells of the semiconductor component which can be driven on the cathode side are arranged in a second surface area of the semiconductor body.
  • the unit cells of the known semiconductor component which can be driven on the cathode side in the second area preferably form an insulated Gate bipolar transistor (IGBT) with an anode-side p-type region, an n-Ba ⁇ siszone and a cathode-side p-zone into which an n + region is embedded, t he together with the n-base zone, the intermediate Area of the cathode-side p-zone and an insulated gate forms a MOS field-effect transistor, the cathode-side electrode with the anode electrode and the anode-side electrode with the cathode electrode of the anode-side controllable semiconductor component and the gate electrode of the anode-side controllable semiconductor component preferably being a common one Gate electrode connected.
  • IGBT insulated Gate bipolar transistor
  • the n-emitter zone and the p-base zone of the semiconductor component which can be controlled on the anode side in the first surface area are controlled by the anode-side p-zone of the cathode side control in order to avoid shortening in the boundary region between the first and second surface regions Semiconductor component separated in the second surface area.
  • Appropriate means of separation are described in claims 14 and 15.
  • an ignition gate can be provided in a region which is separated or removed from the first surface area and which has a p-zone embedded in the n-base zone in the form of a trough with a gate contact which connects to the gate electrode of the is connected on the anode side controllable component, which further contains a second p-zone embedded in the n-base zone, which is connected to the first p-zone by a depletion-type MOS field effect transistor and contains an n + zone with a contact electrode, wherein this contact electrode is connected to the floating electrode and the gate electrode of the depletion-type MOS field-effect transistor is connected to the contact electrode of a p-zone additionally embedded in the n-base zone, which in the space charge zone in the space charge zone during reverse blocking operation of the component which can be driven on the anode side pn transition lies.
  • Another bidirectionally switchable semiconductor component according to the invention consists in the fact that it is formed from a single group of bidirectionally switchable unit cells of the type described above, which result from the ICMT unit cells described above by the n-emitter zone and the p-base zone is replaced in some areas by a p-zone adjacent to the cathode metallization, that is, to the above described type is separated from the n-emitter zone and the p-base zone, the anode metallization and the cathode metallization being connected to a first and second main electrode and in that the gate electrode is separated from the second main electrode and with one from the gate ⁇ Connection of the first MOSFET separate gate connection is connected, so that when the gate of the second MOS field effect transistor is conductively connected to the first main electrode, the function of the anode-side controllable semiconductor component which can be switched by the gate of the first MOS field effect transistor and with positive control of the gate of the first MOS field effect transistor, the function of the insulated gate bi
  • each unit cell is designed as a bidirectional switch which can switch the current on and off in both directions of flow.
  • a significant advantage of this embodiment is that it requires less semiconductor surface.
  • FIG. 1 shows a unit cell of an integrable MOS component (ICMT element) which can be controlled on the anode side according to the invention in section;
  • ICMT element integrable MOS component
  • Fig. 2 shows an area of an integrable controllable on the anode side
  • MOS device which has a gate electrode for ignition, in section
  • FIG. 3 shows the edge region of an integrable MOS component which can be controlled on the anode side and is ignited by MOS gate;
  • Fig. 5 is a bidirectional device that a unit cell acc. 1 and has an IGBT unit cell;
  • 6a-d the bidirectional component acc. 4 in different operating states, namely: 6a in the forward blocking state (operating point on the blocking characteristic in the first quadrant);
  • FIG. 7 shows a section in the partial area of a bidirectional component with an unshortened pn junction on a main electrode
  • FIG. 8 shows a particularly configured ignition area of a MOS component which can be controlled on the anode side and with which switching on under reverse load is prevented in section and
  • Fig. 9 shows a unit cell with bidirectional switching ability in section.
  • the unit cell contains a weakly doped n-base zone 3, which is followed by p-zones 2 and 4, which are doped higher and lower.
  • n + zone 1 follows the lower p-zone 2. This represents the cathode emitter of a thyristor structure which is formed from the layer sequence 1, 2, 3, 4.
  • the upper p-zone 4 is trough-shaped in such a way that the n-base zone 3 emerges laterally to the surface.
  • Two n + zones 5a, 5b are embedded in the p-well per half unit cell and the p-region in between is provided with an insulated gate electrode 6, so that a lateral n-channel MOSFET M1 is formed.
  • the insulator layer under the gate electrode generally consists of silicon dioxide, the gate electrode 6 of doped polysilicon.
  • the n + zone 1 is covered with a cathode metallization 7, which is connected to a cathode connection K.
  • the anode emitter zone 4 of the thyristor which comes to the surface next to the MOSFET area, is provided with a floating connecting electrode FE, which simultaneously contacts the adjacent n + zone 5a of the MOSFET M1 and thus the vertical thyristor 1, 2, 3, 4 connects to the lateral MOSFET M1 from zones 5a, 4, 5b.
  • the n + region 5b of the MOSFET M1 facing away from the connecting electrode FE is provided with an anode contact 8 which is connected to the outer anode terminal A and which has no contact with the anode emitter zone 4 of the thyristor Has.
  • the gate electrode 6 of the MOSFET M1 is connected to the gate terminal G.
  • the unit cell of the inverse component according to FIG. 1 also contains a second MOSFET M2 which, through the n + zone 5b provided with the anode and lying on the edge of the p-well, the n-base zone 3 pulled to the surface and the one in between The lying area of the p-zone 4 is formed, the insulated gate electrode 9 of which is connected to the outer anode contact 8 of the n + zone 5b or is formed by it.
  • a second MOSFET M2 which, through the n + zone 5b provided with the anode and lying on the edge of the p-well, the n-base zone 3 pulled to the surface and the one in between The lying area of the p-zone 4 is formed, the insulated gate electrode 9 of which is connected to the outer anode contact 8 of the n + zone 5b or is formed by it.
  • the structure according to FIG. 1 is generally to be understood as a half unit cell, from which a complete unit cell emerges through mirror-image addition.
  • ICMT Such a cell, designated ICMT, then also contains a second pair of n + zones on the opposite side of the p-well, so that the MOSFETs M1 and M2 also extend there.
  • the MOSFET M1 lying in series with the thyristor in the present case is integrated in the anode emitter zone and designed as an n-channel MOSFET. Refinements for switching on and for achieving a stable reverse blocking behavior are further described below.
  • the unit cell can be seen as a cascode-like integration of a thyristor with a MOSFET (M1).
  • the component in this form in addition to the desired controllability and integrability on the anode side, has the advantage that the MOSFET M1 in series with the thyristor is of the n-channel type, which has a charge carrier mobility which is 3 to 4 times higher than ap -Channel MOS-FET.
  • the npn transistor on the cathode side to which one now has no access through the gate, has a higher current amplification factor and a higher avalanche multiplication factor than a pnp transistor.
  • the n-base zone 3 must therefore be chosen thicker than in the other case.
  • the cathode connection K is positive relative to the anode connection A. Potential lies.
  • the component When the MOSFET M1 is switched on, the component then has the blocking capacity of the reverse-polarized thyristor 1, 2, 3, 4. The voltage is almost entirely absorbed by the anode-side pn junction J i between the n-base zone 3 and the p-zone 4 , since the pn junction J3, which is also polarized in the reverse direction, between the n + zone 1 and the p zone 2 mostly blocks only about 10 V because of the relatively high doping of the p zone 2.
  • the reverse current and breakdown voltage of the component are therefore essentially determined by the pnp transistor 2, 3, 4, which is in series with the avalan pn junction J3. If the MOSFET M1 is switched off, in addition to the junction J2 between the n base zone 3 and the p zone 2, the pn junction J 5 between the p zone 4 and the n + zone 5b is also polarized in the forward direction. Although the structure blocks unchanged with the pn junction J 1, the breakdown voltage and reverse current are now given by the forward blocking capacity of the thyristor structure 2, 3, 4, 5b.
  • the reverse blocking capacity of the ICMT is improved by switching on a secondary path from the n-base zone 3 'to the cathode contact T.
  • FIGS. 1 and 4 are provided with the same reference numbers. The design according to 4 is described in more detail below.
  • the MOSFET M2 in the arrangement shown in FIG. 1 is switched off at VK> VA regardless of whether the MOSFET M1 is switched on or not, since the gate 9 is at the potential of the electrode 8 or the anode. is clock 8, which in this case forms the source of the MOSFET M2.
  • the ICMT component blocks a positive potential at the cathode connection K with respect to the anode connection A regardless of how the gate G is driven. It is assumed that the thyristor structure 2, 3, 4, 5b has a forward blocking capacity. This must be achieved without shortening the pn junction J5, since this junction must block the switching on of the MOSFET M2.
  • a high integral doping concentration N. ** of the p-zone 4 under half b of the n + zone 5b and a small thickness of the zone 5b allow a stable forward blocking behavior of the thyristor 2, 3, 4, 5b, ie a stable reverse blocking behavior of the ICMT with the MOSFET M1 switched off, since the current amplification factor ⁇ H-pn of the n + pn transistor 5b, 4, 3 is then small.
  • NIP is preferably selected to be larger than approximately 2 * 10 14 cm 2 .
  • the cathode connection K is at a negative potential with respect to the anode connection A and the MOSFET M1 is switched off, then the anode-side pn junction Js is polarized in the reverse direction and the p-zone 4 receives a negative potential with respect to the gate electrode 9.
  • This potential taken absolute, is set to a value slightly above the threshold voltage of the MOSFET M2, so that it switches on and opens a bypass from the n-base zone 3 to the anode contact 8.
  • the blocking capability of the ICMT is therefore not provided by the MOSFETs M1, which blocks only a little, but by the n * pn transistor 1, 2, 3, which is connected to the anode 8 with low impedance and via which pn transition J 2 has a high blocking capacity.
  • the prerequisite here is that the breakdown voltage of the pn junction J s is clearly greater than the threshold voltage of M2. This is achieved by doping the p-zone near the pn junction Js and on the surface under the gate oxide. For example, the breakdown voltage is 12 V, but the threshold voltage is 3 V.
  • the cathode potential is lower than the anode potential, ie VK ⁇ VA, but the MOSFET M1 is switched on, the thyristor structure under the floating electrode FE is loaded in the forward direction.
  • the MOSFET M2 is switched off, since the p-zone 4 is almost at the same potential as the gate electrode 9.
  • the component is in the on state.
  • a high integral doping Np of the p-region 4, which, as mentioned, serves to achieve a stable reverse blocking capacity, is also desirable in order to obtain a low forward voltage.
  • the switch-off behavior of the component is given by that of the n + pn transistor 1, 2, 3 when the base is open. Since the current amplification factor and avalanche multiplication factor of such a transistor are considerably larger than in the case of a pnp transistor, the thickness and also the specific resistance of the n-base zone 3 are set greater than for a given voltage which is to be switched with a conventional component controlled from the cathode side, e.g. B. the IGBT or GTO thyristor.
  • the thyristor In order to put the thyristor in the conductive state when the negative voltage is present at the cathode K relative to the anode A and when the MOSFET M1 is switched on, as mentioned, there is first the possibility of dimensioning the thyristor in such a way that it is without the bypass from the n-base zone 3 via M2 to the anode connection A in the forward direction.
  • the sum of the current amplification factors ⁇ npn + ⁇ P np is set greater than 1 in the reverse current range.
  • this can be achieved by setting the efficiency of the emitters to a large extent by means of relatively high integral doping of the emitter zones and the transport factors of the partial transistors by minimizing the integral doping of the p-base zone 2 and long carrier life.
  • the ICMT unit cell then switches to the on state as soon as the voltage between gate G and anode A or between gate G and FE exceeds the threshold voltage.
  • the emitter base junction J3 In order to be able to proceed in this way, the emitter base junction J3 must not be short-circuited, since the component blocks in the forward direction even when the transition is short-circuited even without the shunt by the switched-on MOSFET M2.
  • n-emitter zone 1 is missing in partial areas of the structure and the transition J3 is itself short.
  • a thyristor that does not block in the forward direction in the relatively wide temperature range to be permitted has long switching times due to the large carrier life required.
  • the blocking capacity is also reduced when the MOSFET M2 is switched on because of the large current amplification factor ⁇ npn. Therefore, it is often better to use a thyristor that has forward blocking capability even when the n-base shunt is turned off by the MOSFET M2.
  • an ignition gate ensures that the thyristor switches to the on state when a positive voltage is applied to the gate G.
  • FIG. 2 Such an arrangement for ignition is shown in FIG. 2, the same elements in FIGS. 1 and 2 being provided with the same reference numbers.
  • a p-emitter zone 4 ' is provided with a gate contact 12 which is connected to the gate terminal G via a resistor R connected is.
  • An n + zone 10 embedded in the p-emitter zone 4 ' has a contact 11 which is connected to the floating electrode FE, but does not have the pn junction in the ignition region between p-zone 4' and n + zone 10 shorts.
  • holes diffuse to the space charge zone RLZ around the pn junction J2 between the n-base zone 3 and the p-base zone 2 and are drawn off through the field into the p-base zone 2. They thus act as a base current for the n + pn transi- stor 1, 2, 3 and steer it on.
  • the collector current of this transistor flows into the n-base zone 3 and controls the pnp sub-transistor 4 ', 3, 2 of the thyristor structure.
  • holes increasingly flow into p-base zone 2 and the current increases until the thyristor ignites.
  • This firing gate is related to the "remote gate" arrangement used in the triac. The switched-on state then spreads in a known manner over the area with the ICMT unit cells.
  • MOSFET M1 If the MOSFET M1 is switched off, the current in the ignition area is also switched off.
  • a MOSFET (M2 ') is additionally provided, as in the unit cells according to FIG. 1, which connects the n-base zone 3 to the n + region 10.
  • the n-base zone 3 is therefore connected to the anode connection A when switched off via the switched-on MOSFET M2, the floating electrode FE and the MOSFET M2 of the unit cells.
  • the thyristor 10, 4 ', 3, 2 of the ignition area is polarized in the forward direction. He blocks i. a. only if control current is not fed into the base 4 'of this thyristor by positive voltage at the gate G.
  • FIG. 3 Another arrangement according to the invention for igniting the thyristor with zones 1, 2, 3, 4 when the MOSFET M1 is switched on is shown in FIG. 3.
  • the p-base zone 2 at the edge of the semiconductor body is guided via a p-edge zone 20 to the upper boundary plane of the semiconductor body, as is similarly known from thyristors blocking on both sides.
  • the p-base zone forms an area 24 in which an n + zone 5d is embedded.
  • the p-region 24 is not, as is customary, separated from the upper p-emitter zone 4 in the interior of the semiconductor wafer by the n-base zone 3 emerging on the surface, but is connected to hr by a p-channel zone 21 lying on the surface.
  • Thickness and integral doping of the p-zone 21 are set such that they each have a p-channel depletion type MZA or a p-channel MOSFET of the depletion type together with an insulator located above them and a gate electrode 9 'located towards the inside of the pane and a second gate electrode 22 coming from the edge MZK forms.
  • the gate electrode 9 ' is connected to the outer anode contact 8.
  • the gate electrode 22 also forms the contact layer of the n + zone 5d, which is conductively connected to the cathode contact 7 on the lower boundary plane of the semiconductor body.
  • a MOSFET M2 "of the inversion type is further integrated.
  • the inversion MOSFET M2 turns on and the depletion MOSFET MZA turns off.
  • the n-base zone 2 is now connected to the anode contact 8 and the connection of the upper p-emitter zone 4 to the lower p-base zone 2 is interrupted.
  • the n + pn junction J 2 lying between cathode K and anode A 1 takes i. W. t he tension.
  • the p-channel zone 21 is emptied of charge carriers in the area outside the MOSFET MZA and leads to a reduction in the electrical field on the surface.
  • the cathode potential is greater than the anode potential (VK> VA)
  • the pn junctions J i and J3 are polarized in the reverse direction. Since the p-region 24 and the adjacent part of the n-base zone 3 have a positive polarity with respect to the gate electrode, an n-channel is formed on the surface of the p-region 24 and the p-channel of the MOSFET MZK disappears. Thus, the n-base zone 3 is now connected to the cathode K.
  • the arrangement according to FIG. 3 initially has the advantage that the component is switched on as well as switched off by the MOS gate. Another advantage is that the reverse blocking capacity is improved by the activation of the secondary path from the n-base zone 3 to the cathode K.
  • the MOSFET M1 remains switched off when the voltage around the pn junction Js is built up and the MOSFET M2 switches on, it is not sufficient to put the gate G at the potential of the anode A, since then both MOSFETs would switch on if the Voltage at the pn junction Js exceeds the threshold voltage of the MOSFETs. Rather, it is necessary to give the gate G a negative voltage with respect to A, e.g. B. a voltage of -5 V. Then the MOSFET M1 remains switched off, while M2 switches on and the pn junction J 2 begins to block.
  • the component need not necessarily switch off. Since the MOSFET M1 then does not remain fully switched off, one would no longer have to do a pure cascode switch-off.
  • a MOSFET shows no current limitation when the gate-drain voltage is fixed.
  • the gate G is given a fixed voltage with respect to the floating electrode FE, a current limitation is obtained. Because of the then fully switched-on MOSFET M2, the current limitation up to high voltages is ensured by the n + pn transistor 1, 2, 3 with the blocking pn junction J 2 .
  • FIG. 1 shows a lateral embodiment of the component according to FIG. 1 that can be switched on and off on the anode.
  • the n-base zone 3' is below by an insulator or a pn junction is also separated from the underlying substrate.
  • the anode metallization 8 'and the cathode metallization 7' have no contact with the p-zones 4 "and 2 ', respectively, in which the contacted n + zones 5b" and 5a' are embedded.
  • the p-base zone 2 ' is also on the upper main plane, the p-base zone 2' and the p-emitter zone 4 'of the thyristor 1', 2 ', 3', 4 "are directly through the p-channel zone 21 ' connected to one another, which forms with the oxide overlapping metallizations 7 ', 8' of the anode and cathode MOSFETs MZK ', MZA' of the depletion type.
  • the component locks in the reverse direction independently of the adjacent one Gate voltage, the cathode-side MOS structure becomes effective and blocks J i.
  • the composition of a bidirectional switch from the ICMT unit cell 4 described above and an IGBT unit cell is shown in FIG. 5.
  • the IGBT unit cell has the usual structure described below.
  • the p + zone 2a below is followed by a weakly doped n base zone 3a, which contains a p-well 4a on the top, in which an n + zone 5c is embedded.
  • the p + zone 2a is provided with a metallic contact layer 7a and the n + zone 5c and the p-well 4a with a common metal layer 10a.
  • a gate electrode 11a ' is located above the area of the p-well 4a between the n + zone 5c and the surface area of the n-base zone 3a.
  • the ICMT unit cell corresponds to the arrangement shown in FIG. 1.
  • the thyristor can be ignited by an arrangement according to FIG. 3, not shown in FIG. 5.
  • both parts of the bidirectional switch, the ICMT and the IGBT can be produced using the same process steps, starting from a semiconductor wafer with n-doping. Only the lateral masking, especially for the n + zones, must be different.
  • the lower contact electrodes 7, 7a are common to both unit cells and connected to a main electrode terminal E2.
  • the anode electrode 8 of the ICMT and the cathode or source electrode 10a of the IGBT are connected to an upper main connection E1.
  • the ICMT unit cells and the IGBT unit cells can also be arranged in different semiconductor components which are connected to one another in a hybrid circuit.
  • the gate electrode 6 of the ICMT and the gate electrode 11 a 'of the IGBT are connected in Fig. 5 to a common outer gate terminal Ggem.
  • the ICMT and the IGBT can also have separate gate connections G1 and G2 and can thus be controlled separately, which has certain advantages, as described below.
  • the two gates are controlled from the same reference electrode E1 or FE, which is why the control effort does not increase so much compared to the case of a gate.
  • the two types of unit cells in the bidirectional semiconductor component according to FIG. 5 are each arranged in a separate surface area of the semiconductor body.
  • the relatively large distance prevents the pn junctions J3 and J 1 of the ICMT part from being short-circuited or from the p zone 4a of the IGBT and the npn zone sequence 1, 2, 3 of the ICMT formed thyristor structure, which can not be turned off by the gate, turns on.
  • the IGBT is also in the blocking state, the voltage being picked up again by the pn junction J 1 'between p zone 4a and n base 3a. This is indicated in Fig. 6a by the hatched area in the connection J 1, J 1 '.
  • the combined component is thus in the forward blocking state, which is described by a working point on the blocking characteristic in the first quadrant.
  • the voltage ar * of the electrode E2 is still positive, e.g. B. + 500 V, but is now at the gate GGEM a positive voltage of z. B. 10 V, which is greater than the threshold voltage of the MOSFETs.
  • the IGBT thus switches to the on state in a known manner.
  • the floating anode connection of the thyristor is connected to the main electrode E1 through the n-channel of the MOSFET M1.
  • the thyristor is still in the reverse blocking state, although the voltage has coincided with the forward voltage of the IGBT.
  • the combined bidirectional device is in the forward transmission state determined by the IGBT.
  • the IGBT blocks through the lower pn junction J2, regardless of which gate voltage is applied.
  • the MOSFET M1 is switched off, the ICMT also blocks, also through the pn junction J2 between the n-base 3 and the lower p-zone 2, as described above. This case is shown in Fig. 6c.
  • the internal MOSFET M2 is switched on in this state, so that the n base zone 3 is connected to the upper main terminal E1 via the shunt X to the anode-side pn junction J 1.
  • the breakdown voltage of the pn junction Js has to be set significantly higher than the threshold voltage of the MOSFET M2.
  • the thickness and the specific resistance of the n-zone 3a are set greater than it is for the IGBT alone would be required.
  • the IGBT remains in the blocking state, as already mentioned.
  • the p-emitter zone 4 of the thyristor is connected to the outer electrode E1 via the floating electrode and the n-channel of the MOSFET M1.
  • the potential of the p-zone 4 rises from the previous negative value approximately to the zero value of the electrode E1, so that the n-channel in the MOSFET M2 disappears, ie it is switched off.
  • the thyristor 1, 2, 3, 4 must switch on.
  • the n + zone 1 is absent in the area with the IGBT cells and the pn junction J3 therefore normally ends on the lower surface and is short-circuited by the metallization 7 common to the IGBT and the ICMT.
  • the pn junction J3 must not be short.
  • the region of the lower boundary level where the pn junction J3 emerges is covered with an oxide layer 12 ′ or another insulator, as shown in FIG. 7.
  • the p-zone 2 of the ICMT also runs out shortly after the n + emitter zone 1 and ends in the region of the surface covered with oxide, so that it has no contact with the metallization 7 of the lower boundary plane of the semiconductor body.
  • the p-zone 2a of the IGBT begins at a distance from it and is separated from the p-base zone 2 of the ICMT by the n-base zone 3 approaching the isolated surface.
  • the width of the n-base zone 3 on the surface is so small that the blocking ability of the pn junction J 2 is not impaired.
  • the pn junction J3 can be polarized in the reverse direction, which is necessary for the function of the edge configuration according to FIG. 3.
  • the thyristor 1, 2, 3, 4 can now be dimensioned such that it does not block in the forward direction without being shortened by the internal MOSFET M2.
  • the p-base zone 2 and the anode-side p-zone 2a of the component which can be controlled on the cathode side can also be separated by a trench which is expediently filled with insulating material.
  • the component switches on by increasing the gate voltage to a value above the threshold voltage, and switches it off by lowering the gate voltage to zero or a negative value, both when the lower electrode E2 is positive compared to E1 (1st quadrant) as well as with negative polarity of E2 compared to E1 (3rd quadrant).
  • the switched-on ignition range cannot be switched off at the same time as the IGBT by the MOSFET M1, since the pn junction Js polarized in transmission lies in parallel.
  • this ignition gate In order to prevent the ignition area from being switched on, it is generally necessary when using this ignition gate to provide the gate electrode 6 of the ICMT with its own gate connection G1 and the gate electrode 11 of the IGBT with a separate gate connection G2 and to control both with different control signals.
  • V (E2)> V (E1) only the IGBT is then driven with a positive gate voltage, while the voltage at the ICMT gate G1 is set to zero or negative with respect to FE.
  • the embodiment of the ignition area of a bidirectional component comprising an ICMT and an IGBT shown in FIG. 8 allows the ICMT and the IGBT to be controlled via a single gate connection G 'even in the event that an ignition gate is required.
  • this gate G ' causes the thyristor 1, 2, 3, 4 of the ICMT to be switched on when a positive gate voltage is applied.
  • V (E2)> V (E1) a positive gate voltage can be applied without the ICMT part of the component turning on.
  • the p-region provided with a gate contact 12 has its own p-well 4a ', which has the well-shaped p-region 4b, which contains the n + zone 10 "with the electrode 1 1" connected to the FE, is only connected by ap channel 4c.
  • regions 4a ', 4c, 4b in conjunction with the substrate of n-base zone 3, form a p-channel MOSFET MZ of the depletion type.
  • the firing gate structure shown in FIG. 8 switches on the thyristor from 1, 2, 3, 4 at V (E2) ⁇ V (E1). However, the thyristor structure of FIGS. 2, 3, 4b, 10 is not fired in the first quadrant, where it is poled in the forward direction. The shorting of the pn junction J ⁇ further stabilizes the blocking behavior in the first quadrant.
  • the electrode FE then assumes a potential compared to E1, which is given by the voltage of the pn junction Js, which is weakly forward-polarized by the reverse current.
  • E1 the voltage of the pn junction Js, which is weakly forward-polarized by the reverse current.
  • the threshold voltage in components of this type typically has values around 3 or 4 V, so that the IGBT blocks.
  • a shorting of the pn junction J3 is prevented according to the embodiment according to FIG. 6 with the aid of an oxide layer 12 ". Since the thyristor structure 1, 2, 3, 4 is to conduct well in the third quadrant, this is however carried out by the wi The junction J3 is impaired if the lateral extent of the n + emitter zone 1, like that of the p zone 2a, is to be greater than the lateral cell diameter (cell pitch).
  • the MOSFET M1 When the MOSFET M1 is switched on, the component acts like an IGBT through the gate G2 If G2 is connected to E1, the function of an ICMT switchable by G1 is obtained.
  • gate E1 is therefore set to positive potential with respect to E1 (or FE), so that MOSFET M1 is switched on is.
  • the thyristor 1, 2, 3, 4 is then polarized in reverse, and the right part of the structure, namely 2a, 3, 4, 5b together with the MOS gate G2, behaves like an IGBT.
  • the component switches on with a positive voltage at G2 compared to E1. If you lower the voltage to zero, it switches off.
  • G2 is connected to the electrode ET, so that the component functions like the ICMT in FIG. 1. By actuating the gate G1, it can be switched on and off, as described there.
  • n + base zone 1 like the p-emitter zone 2a, only covers part of the lower boundary surface does not significantly interfere with the function of the ICMT or IGBT, since the thickness of the base zone 3 is considerably greater than the lateral extent of the Gap in the lower n-emitter zones 1 and zone 2a for the ICMT and IGBT function.
  • MOS inversion channels on the upper main plane of the semiconductor body are nevertheless in the entire channel width, i. H. Expansion perpendicular to the plane of the drawing, effective.
  • a bidirectional component with relatively small areas and a large channel width has thus been created.
  • the active component area is approximately halved, neither the channel resistance nor the on-resistance inside the semiconductor is significantly increased.
  • lateral components 4 can be controlled with conventional lateral components, e.g. B. combine a lateral IGBT, the unit cells of which are arranged in another surface area, analogously to FIG. 5 to form a lateral bidirectional semiconductor component.
  • the gate electrodes of both individual components generally have a common gate connection. As described with reference to FIG. 6, the component is switched on independently of the polarity of the main electrodes with a positive gate voltage, and switched off with a negative or vanishing gate voltage.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

L'invention concerne un composant à semi-conducteur pouvant être commandé du côté anode, dont le corps semi-conducteur présente une pluralité de cellules unitaires, à structure thyristor, juxtaposées et montées en parallèle. Des zones P fortement dopées, se présentant sous forme de zone de base P (2) et de la zone émettrice P (4), sont adjacentes, des deux côtés, à une zone de base N (3) faiblement dopée. La zone de base P (2) est suivie d'une zone émettrice N fortement dopée (1) en contact avec une cathode (7). Un premier transistor à effet de champ MOS à canal N (M1) est intégré dans la zone émettrice P (4), ce transistor étant commuté par une électrode flottante (FE) en série avec la structure thyristor. L'électrode de drain (5b) du premier transistor à effet de champ MOS (M1) est pourvue d'une anode (8) extérieure, sans contact avec la zone émettrice P (4). Un second transistor à effet de champ MOS à canal N (M2) est intégré entre la zone de base N (3) et la zone de drain (5b) du premier transistor à effet de champ MOS (M1).
EP95934099A 1994-09-22 1995-09-22 Composant a semi-conducteur pouvant etre commande Withdrawn EP0782769A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4433796 1994-09-22
DE4433796A DE4433796A1 (de) 1994-09-22 1994-09-22 Steuerbares Halbleiterbauelement
PCT/EP1995/003742 WO1996009649A1 (fr) 1994-09-22 1995-09-22 Composant a semi-conducteur pouvant etre commande

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EP0782769A1 true EP0782769A1 (fr) 1997-07-09

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US (1) US5923055A (fr)
EP (1) EP0782769A1 (fr)
JP (1) JPH10505953A (fr)
DE (1) DE4433796A1 (fr)
WO (1) WO1996009649A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8378032B2 (en) 2005-10-14 2013-02-19 Basell Poliolefine Italia S.R.L. Elastoplastic polyolefin compositions having low gloss

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0966042B1 (fr) * 1998-06-19 2008-01-09 STMicroelectronics S.r.l. Dispositif intégré monolithiquement comportant une structure protectrice
EP1142026B1 (fr) * 1998-12-04 2007-11-14 Infineon Technologies AG Commutateur statique de puissance
JP4228586B2 (ja) * 2002-05-21 2009-02-25 富士電機デバイステクノロジー株式会社 半導体装置
JP4437655B2 (ja) * 2003-10-02 2010-03-24 三菱電機株式会社 半導体装置及び半導体装置の駆動回路
DE102004037252A1 (de) * 2004-07-31 2006-03-23 Atmel Germany Gmbh Verfahren zur Integration von drei Bipolartransistoren in einem Halbleiterkörper, Mehrschichtbauelement und Halbleiteranordnung
FR2879350A1 (fr) * 2004-12-15 2006-06-16 St Microelectronics Sa Commutateur bidirectionnel a commande en tension
JP5033335B2 (ja) * 2006-02-21 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いたインバータ装置
JP4632068B2 (ja) 2008-05-30 2011-02-16 三菱電機株式会社 半導体装置
DE102010039258B4 (de) 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistorbauelement mit reduziertem Kurzschlussstrom
US9478646B2 (en) * 2011-07-27 2016-10-25 Alpha And Omega Semiconductor Incorporated Methods for fabricating anode shorted field stop insulated gate bipolar transistor
FR3036001A1 (fr) * 2015-05-05 2016-11-11 St Microelectronics Tours Sas Commutateur bidirectionnel de puissance
DE102022128549B3 (de) 2022-10-27 2023-12-07 Infineon Technologies Ag Feldeffekttransistor mit drainerweiterungsgebiet

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
US4816892A (en) * 1982-02-03 1989-03-28 General Electric Company Semiconductor device having turn-on and turn-off capabilities
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
JPS62122272A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 半導体装置
EP0329993A3 (fr) * 1988-02-25 1990-03-21 Siemens Aktiengesellschaft Thyristor à faible puissance de commande
US4958211A (en) * 1988-09-01 1990-09-18 General Electric Company MCT providing turn-off control of arbitrarily large currents
US5194394A (en) * 1989-10-23 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of manufacturing the same
US5016076A (en) * 1990-02-28 1991-05-14 At&T Bell Laboratories Lateral MOS controlled thyristor
EP0559945B1 (fr) * 1992-03-13 1996-10-16 Asea Brown Boveri Ag Dispositif semi-conducteur de puissance à extinction
JP3119931B2 (ja) * 1992-03-31 2000-12-25 株式会社東芝 サイリスタ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9609649A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8378032B2 (en) 2005-10-14 2013-02-19 Basell Poliolefine Italia S.R.L. Elastoplastic polyolefin compositions having low gloss

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DE4433796A1 (de) 1996-03-28
JPH10505953A (ja) 1998-06-09
WO1996009649A1 (fr) 1996-03-28
US5923055A (en) 1999-07-13

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