EP0771072A1 - Eingangsschaltung zum Setzen des Modus - Google Patents

Eingangsschaltung zum Setzen des Modus Download PDF

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Publication number
EP0771072A1
EP0771072A1 EP96116770A EP96116770A EP0771072A1 EP 0771072 A1 EP0771072 A1 EP 0771072A1 EP 96116770 A EP96116770 A EP 96116770A EP 96116770 A EP96116770 A EP 96116770A EP 0771072 A1 EP0771072 A1 EP 0771072A1
Authority
EP
European Patent Office
Prior art keywords
logic
control signal
mode setting
mode
setting terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96116770A
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English (en)
French (fr)
Other versions
EP0771072B1 (de
Inventor
Kiyoshi Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0771072A1 publication Critical patent/EP0771072A1/de
Application granted granted Critical
Publication of EP0771072B1 publication Critical patent/EP0771072B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Definitions

  • This invention relates to an input circuit for mode setting, and more particularly to that of low power dissipation applied for setting operational mode of a microcomputer chip, for instance.
  • a bi-functional microcomputer chip equipped with additional patterns for in-circuit emulation, in order to economize times and costs for program developing, wherein the additional patterns are to be inactivated when the microcomputer chip is served for its original use.
  • a bonding pat on the microcomputer chip of this kind connected to an input circuit for selecting an operation mode of the microcomputer and to be bonded in a manufacturing process to a ground GND or a power supply VDD for determining the operation mode according to actual use.
  • the input circuit is generally designed to control the operation mode corresponding to whether the concerning bonding pad is bonded to the ground GND, for example, or left open un-bonded.
  • FIG. 5 shows an example of the input circuit of this kind, wherein a mode select signal MODE from the bonding pad I1, which, is coupled to a power supply VDD through a pull-up resistor R1, is connected to an input terminal of an inverter 501 having a hysteresis characteristic for outputting control signal MODE OUT to be supplied to inner circuits of the microcomputer chip.
  • the inverter 501 when the bonding pad I1 is bonded to the ground GND, the power supply voltage divided by the pull-up resistor R1 and the wiring resistance concerning the bonding pad I1 is impressed into the inverter 501.
  • the wiring resistance being sufficiently small than the resistance of the pull-up resistor R1, the inverter 501 outputs the control signal MODE OUT at HIGH level.
  • the through current in the inverter 501 can be prevented in the conventional input circuit of FIG. 5.
  • another current flows there through the pull-up resistor R1, when the bonding pad I1 is bonded to the ground GND.
  • the current flowing through the pull-up resistor R1 may be decreased by increasing the resistance of the pull-up resistor R1, but when it becomes high, the input level of the inverter 501 becomes susceptible to noises in case the bonding pad I1 is left open.
  • FIG. 6 is a circuit diagram illustrating input circuit of the proposal.
  • a mode select signal MODE from the bonding pad I1 is connected through an input resistor R2 to an input terminal of an inverter 501 for outputting control signal MODE OUT to be supplied to inner circuits of the microcomputer chip, and input terminal of the inverter 501 is coupled to the power supply VDD through a parallel connection of a pull-up resistor R1 and a pMOS transistor P2 gated by the output signal MODE OUT of the inverter 501.
  • the power supply voltage is divided by the input resistor R2 and the pull-up resistor R1 to be input to the inverter 501. Therefore, when the resistance of the input resistor R2 is sufficiently smaller than that of the pull-up resistor R1, the input level of the inverter 501 becomes sufficiently low and the inverter 501 outputs the control signal MODE OUT at HIGH level, which naintains the pMOS transistor P2 at status OFF.
  • the input level of the inverter 501 is pulled up to HIGH level by the power supply voltage through the pull-up resistor R1 and the control signal MODE OUT output from the inverter 501 becomes LOW, turning the pMOS transistor P2 to ON. So, the input level of the inverter 501 is maintained stably at HIGH level even when a pull-up resistor R1 of high resistance is applied for decreasing the current flowing there. And, by selecting appropriate values for the resistance of the input resistor R2 and ON-resistance of the pMOS transistor P2, a hysteresis characteristic can be realized in the input circuit even when the inverter 501 has not hysteresis characteristic.
  • FIG. 7 illustrates another example of the countermeasures for preventing power dissipation of the input circuit, wherein a pMOS transistor P3 is provided between the pull-up resistor R1 and the power supply VDD in addition to the input circuit of FIG. 5.
  • a power save signal PS at HIGH level is impressed to another bonging pad I2 connected to gate of the pMOS transistor P3 in case the bonding pad I1 is bonded to the ground GND for outputting the control signal MODE OUT at HIGH level, while the power save signal PS is turned to LOW in case the bonding pad I1 is left open for outputting the control signal MODE OUT at LOW level.
  • the current dissipation through the pull-up resistor R1 is prevented in the input circuit of FIG. 7 by the pMOS transistor P3, even when resistance of the pull-up resistor R1 is set low for stabilizing the input level of the inverter 501 while the bonding pad I1 is left open at high impedance.
  • a primary object of the invention is to provide an input circuit for mode setting with a simple configuration sufficiently stable, preventing unnecessary current consumption.
  • an input circuit of the invention for outputting a control signal of logic HIGH when a mode setting terminal thereof is at logic LOW and outputting the control signal of logic LOW when the mode setting terminal is left open;
  • an input circuit for outputting a stable control signal for mode setting can be provided in the invention without any resistance element, unnecessary current flowing through the mode setting terminal being prevented.
  • FIG. 1 is a circuit diagram illustrating an embodiment of the input circuit for mode setting of the invention.
  • FIG. 2 is a circuit diagram illustrating another embodiment of the invention.
  • FIG. 3 is a timing chart illustrating operation of the embodiments in case the first bonding pad I1 is bonded to a ground GND.
  • FIG. 4 is a timing chart illustrating operation of the embodiments in case the first bonding pad I1 is left open.
  • FIG. 5 shows an example of conventional input circuits for mode setting.
  • FIG. 6 is a circuit diagram illustrating input circuit of a prior art.
  • FIG. 7 illustrates another example of the conventional input circuit for mode setting.
  • FIG. 1 is a circuit diagram illustrating an embodiment of the input circuit for mode setting of the invention, comprising;
  • a static latch circuit 100 is composed of the first nMOS transistor N1, the NOR gate 101, the first inverter 102 and the second nMOS transistor N2 together with the delay circuit 103 and the second inverter 104.
  • the potential A of the connection point becomes nearly equal to potential of the ground GND.
  • the control signal MODE OUT at LOW level is output from the NOR gate 101 and HIGH level of the output of the first inverter 102 is cut off from the first input terminal of the NOR gate 101 by the second nMOS transistor N2 at status OFF gated with inverted logic of HIGH level of the delayed reset signal RESD.
  • the delayed reset signal RESD turning to LOW following the reset signal RES
  • the first nMOS transistor N1 becomes OFF and the second nMOS transistor N2 becomes ON in turn, and so the first input terminal of the NOR gate 101 becomes LOW controlled by inverted logic of the control signal MODE OUT already turned to HIGH level.
  • the LOW level of the potential A at the first bonding pad I1 is latched by the static latch 100 with a pulse of HIGH level of the reset signal RES and the control signal MODE OUT output from the NOR gate 101 is maintained at HIGH level stably as long as the reset signal RES remains LOW.
  • FIG. 4 is a timing chart illustrating operation of the embodiment of FIG. 1 in case the first bonding pad I1 is left open.
  • the control signal MODE OUT output from the NOR gate 101 becomes LOW, which makes the pMOS transistor P1 at status ON.
  • the potential A of the connection point becomes HIGH pulled up to the power supply voltage Vdd .
  • the delayed reset signal RESD turns to HIGH following the reset signal RES
  • the first nMOS transistor N1 connects the HIGH level of the potential A to the first input terminal of the NOR gate 101, the control signal MODE OUT remaining at LOW level.
  • the second nMOS transistor N2 is gated to status OFF with inverted logic of the delayed reset signal RESD similarly in case of FIG. 3 when the first bonding pad is bonded to the ground GND.
  • the control signal MODE OUT remains at LOW level, the first input terminal of the NOR gate 101 delivered with the potential A at HIGH level. Then, the delayed reset signal RESD returning to LOW, the first nMOS transistor N1 becomes OFF and the second nMOS transistor N2 becomes ON, and the first input terminal of the NOR gate 101 becomes controlled with HIGH level of the output of the first inverter 102, that is, inverted logic of the control signal MODE OUT.
  • the HIGH level of the potential A is latched with a HIGH level of the reset signal RES and the NOR gate 101 outputs the control signal MODE OUT at LOW level stably even after the reset signal RES returned to LOW level.
  • the status of the bonding pad I1 is stably latched in the embodiment and the NOR gate 101 can maintain the control signal MODE OUT at HIGH level or LOW level according to the status of the bonding pad I1 after the delayed reset signal RESD returned to LOW level without any unnecessary through current, because the pull-up transistor P1 is controlled to OFF when the control signal is at HIGH level as above described.
  • the input circuit of the embodiment needs no additional bonding pad nor control circuit, since it is controlled with the reset signal RES supplied to the second bonding pad I2, both of which are generally provided for microcomputer chips for initializing their inner-circuits when they are made active.
  • the input circuit of the embodiment without any resistance element can be configured on a smaller semiconductor chip than the input circuits of prior arts such as illustrated in FIG. 5 to FIG. 7 comprising resistor elements of high resistance needing wide layout spaces on the semiconductor chips.
  • an input circuit for mode setting sufficiently stable and without unnecessary current consumption can be provided in the embodiment with a simple configuration.
  • FIG. 2 is a circuit diagram illustrating another embodiment of the invention having a similar configuration with the embodiment of FIG. 1 except that the first bonding pad I1 is coupled to the ground GND through a third nMOS transistor N3 gated with inverted logic, output of the first inverter 102, of the control signal MODE OUT, in place of the pMOS transistor P1, and that a third inverter 105 is further provided between source of the first nMOS transistor N1 and connection point of the third nMOS transistor N3 and the first bonding pad I1.
  • a static latch circuit 200 is composed of the first nMOS transistor N1, the NOR gate 101, the first inverter 102 and the second nMOS transistor N2 together with the delay circuit 103 and the second and the third inverters 104 and 105.
  • level of the control signal MODE OUT is determined by bonding the first bonding pad I1 to the power supply VDD or leaving it open un-bonded to anywhere.
  • the potential B of the connection point becomes nearly equal to potential of the power supply VDD.
  • the delayed reset signal RESD turning to LOW following the reset signal RES
  • the first nMOS transistor N1 becomes OFF and the second nMOS transistor N2 becomes ON in turn, and so the first input terminal of the NOR gate 101 becomes controlled with inverted logic of the control signal MODE OUT already turned to HIGH level.
  • the HIGH level of the potential B at the first bonding pad I1 is latched by the static latch 200 with a pulse of HIGH level of the reset signal RES and the control signal MODE OUT output from the NOR gate 101 is maintained at HIGH level stably as long as the reset signal RES remains LOW.
  • the control signal MODE OUT output from the NOR gate 101 becomes LOW, which makes the third nMOS transistor N3 at status ON.
  • the first bonding pad I1 is left open in the case, the potential B of the connection point becomes LOW pulled down to the potential of the ground GND.
  • the delayed reset signal RESD turns to HIGH following the reset signal RES, the first nMOS transistor N1 connects inverted logic HIGH of the LOW level of the potential B to the first input terminal of the NOR gate 101, the control signal MODE OUT remaining at LOW level.
  • the second nMOS transistor N2 is gated to status OFF with inverted logic of the delayed reset signal RESD similarly in case of FIG. 3 when the first bonding pad is bonded to the power supply VDD.
  • the control signal MODE OUT remains at LOW level, the first input terminal of the NOR gate 101 delivered with the inverted logic HIGH of the potential B of LOW level. Then, the delayed reset signal RESD returning to LOW, the first nMOS transistor N1 becomes OFF and the second nMOS transistor N2 becomes ON, and so, the first input terminal of the NOR gate 101 becomes controlled with HIGH level of the output of the first inverter 102, that is, inverted logic of the control signal MODE OUT.
  • the LOW level of the potential B is latched with a HIGH level of the reset signal RES and the NOR gate 101 outputs the control signal MODE OUT at LOW level stably even after the reset signal RES returned to LOW level.
  • the status of the bonding pad I1 is stably latched in the embodiment and the NOR gate 101 can maintain the control signal MODE OUT at HIGH level or LOW level according to the status of the bonding pad I1 after the delayed reset signal RESD returned to LOW level without any unnecessary through current from the bonding pad I2 to the ground GND, because the pull-down transistor N3 is controlled to OFF when the control signal is at HIGH level as above described.
  • the input circuit of FIG. 2 needing no additional bonding pad nor control circuit can be configured on a smaller semiconductor chip than the input circuits of prior arts such as illustrated in FIG. 5 to FIG. 7, similarly to the embodiment of FIG. 1.
  • an input circuit for mode setting sufficiently stable and without unnecessary current consumption can be provided with a simple configuration in the invention even when it is more practical to prepare a bonding pad for mode setting besides a bonding pad for a power supply.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Power Sources (AREA)
  • Microcomputers (AREA)
EP96116770A 1995-10-25 1996-10-18 Eingangsschaltung zum Setzen des Modus Expired - Lifetime EP0771072B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP277324/95 1995-10-25
JP27732495A JP3415347B2 (ja) 1995-10-25 1995-10-25 マイクロコンピュータの動作モード設定用入力回路

Publications (2)

Publication Number Publication Date
EP0771072A1 true EP0771072A1 (de) 1997-05-02
EP0771072B1 EP0771072B1 (de) 1999-01-13

Family

ID=17581951

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EP96116770A Expired - Lifetime EP0771072B1 (de) 1995-10-25 1996-10-18 Eingangsschaltung zum Setzen des Modus

Country Status (5)

Country Link
US (1) US5764075A (de)
EP (1) EP0771072B1 (de)
JP (1) JP3415347B2 (de)
KR (1) KR100210557B1 (de)
DE (1) DE69601342T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2314711A (en) * 1996-06-29 1998-01-07 Hyundai Electronics Ind Memory IC auto mode CTT/LVTTL selector with reduced power consumption
EP0881769A2 (de) * 1997-05-30 1998-12-02 Nec Corporation Überstromdetektor und damit ausgestattete Lasttreiberschaltung
EP1710914A1 (de) * 2005-03-15 2006-10-11 Fujitsu Limited Eingangsschutzschaltung

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885213B2 (ja) * 1997-01-23 1999-04-19 日本電気株式会社 半導体集積回路
US6172519B1 (en) * 1997-12-18 2001-01-09 Xilinx, Inc. Bus-hold circuit having a defined state during set-up of an in-system programmable device
US6191607B1 (en) * 1998-09-16 2001-02-20 Cypress Semiconductor Corporation Programmable bus hold circuit and method of using the same
JP3499766B2 (ja) * 1998-12-21 2004-02-23 Ｎｅｃエレクトロニクス株式会社 Ｐｌｌのロック判定回路
JP2001060667A (ja) * 1999-08-24 2001-03-06 Nec Corp 半導体集積回路
DE10118863A1 (de) * 2001-04-18 2002-10-31 Infineon Technologies Ag Elektrische Schaltung
JP2006310512A (ja) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
US7557604B2 (en) 2005-05-03 2009-07-07 Oki Semiconductor Co., Ltd. Input circuit for mode setting

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985641A (en) * 1988-05-07 1991-01-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having selectable operational functions
JPH03203409A (ja) 1989-12-29 1991-09-05 Nec Corp プルアップ入力回路およびプルダウン入力回路
EP0535776A1 (de) * 1991-09-04 1993-04-07 Sharp Kabushiki Kaisha Integrierte Schaltung
EP0573965A2 (de) * 1992-06-10 1993-12-15 Nec Corporation Halbleiteranordnung mit anschlusswählender Schaltung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03206409A (ja) * 1990-01-09 1991-09-09 Konica Corp ズームレンズ鏡胴
JPH05160684A (ja) * 1991-12-06 1993-06-25 Matsushita Electric Ind Co Ltd ラッチ回路
US5598110A (en) * 1994-11-01 1997-01-28 Acer Incorporated Detector circuit for use with tri-state logic devices
US5532957A (en) * 1995-01-31 1996-07-02 Texas Instruments Incorporated Field reconfigurable logic/memory array
US5684411A (en) * 1995-10-13 1997-11-04 Seiko Communications Systems, Inc. Self-configuring bus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985641A (en) * 1988-05-07 1991-01-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having selectable operational functions
JPH03203409A (ja) 1989-12-29 1991-09-05 Nec Corp プルアップ入力回路およびプルダウン入力回路
EP0535776A1 (de) * 1991-09-04 1993-04-07 Sharp Kabushiki Kaisha Integrierte Schaltung
EP0573965A2 (de) * 1992-06-10 1993-12-15 Nec Corporation Halbleiteranordnung mit anschlusswählender Schaltung

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2314711A (en) * 1996-06-29 1998-01-07 Hyundai Electronics Ind Memory IC auto mode CTT/LVTTL selector with reduced power consumption
US5963077A (en) * 1996-06-29 1999-10-05 Hyundai Electronics Industries Co., Ltd. Auto mode selector
GB2314711B (en) * 1996-06-29 2000-06-28 Hyundai Electronics Ind Auto mode selector
EP0881769A2 (de) * 1997-05-30 1998-12-02 Nec Corporation Überstromdetektor und damit ausgestattete Lasttreiberschaltung
EP0881769A3 (de) * 1997-05-30 2000-05-17 Nec Corporation Überstromdetektor und damit ausgestattete Lasttreiberschaltung
EP1710914A1 (de) * 2005-03-15 2006-10-11 Fujitsu Limited Eingangsschutzschaltung

Also Published As

Publication number Publication date
KR970024606A (ko) 1997-05-30
US5764075A (en) 1998-06-09
JP3415347B2 (ja) 2003-06-09
EP0771072B1 (de) 1999-01-13
JPH09120324A (ja) 1997-05-06
DE69601342T2 (de) 1999-08-26
DE69601342D1 (de) 1999-02-25
KR100210557B1 (ko) 1999-07-15

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