EP0701533B1 - Procede de production de monosilane de haute purete et appareil pour cette production - Google Patents

Procede de production de monosilane de haute purete et appareil pour cette production Download PDF

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Publication number
EP0701533B1
EP0701533B1 EP95913886A EP95913886A EP0701533B1 EP 0701533 B1 EP0701533 B1 EP 0701533B1 EP 95913886 A EP95913886 A EP 95913886A EP 95913886 A EP95913886 A EP 95913886A EP 0701533 B1 EP0701533 B1 EP 0701533B1
Authority
EP
European Patent Office
Prior art keywords
gas
monosilane
rectification column
liquid
condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP95913886A
Other languages
German (de)
English (en)
Other versions
EP0701533A1 (fr
Inventor
Takashi Harima Factory Of Teisan K.K. Nagamura
Shinji Harima Factory Teisan K.K. TOMITA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Publication of EP0701533A1 publication Critical patent/EP0701533A1/fr
Application granted granted Critical
Publication of EP0701533B1 publication Critical patent/EP0701533B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/046—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B01D3/14—Fractional distillation or use of a fractionation or rectification column
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S62/00—Refrigeration
    • Y10S62/902—Apparatus
    • Y10S62/905—Column

Definitions

  • the present invention relates to a method of producing ultra high purity monosilane and apparatus therefor, and particularly to an ultra high purity monosilane producing method which comprises liquefying and rectifying a feed monosilane gas, thereby producing high pressure monosilane gas and high pressure monosilane liquid, each having an ultra high purity, which are free from hydrogen having a boiling point lower than that of monosilane and chlorides having boiling points higher than that of monosilane, and an apparatus therefor.
  • Monosilane gas is generally indispensable for the manufacture of ultra LSIs, solar batteries, photosensitive materials and the like.
  • a known method for producing monosilane gas is that disclosed in the official gazette of Japanese Patent Publication N° 3,806/1989.
  • Such monosilane gas preferably should have a high purity, for instance, of 99.9999 % or more.
  • a preferred method for producing such high purity monosilane gas and a preferred unit therefor have not yet been developed.
  • the present invention is intended to achieve the aforementioned purpose.
  • the ultra high purity monosilane producing method is characterized by comprising: pressurizing, cooling down and gas-liquid separating a feed monosilane gas; introducing the separated gas to the middle stage of a lower rectification column and rectifying the pressurized gas in the lower rectification column; introducing the gas resulted from this rectification to the middle stage of an upper rectification column and rectifying the same gas there; and taking out a high pressure monosilane gas product or liquid monosilane product having an ultra high purity which is resulted from this rectification, from the bottom portion of said upper rectification column.
  • the ultra high purity monosilane producing method according to the present invention is characterized by further comprising: a step of warming the liquid reservoired in the bottom portion of said lower rectification column by means of a reboiler, whereby low boiling point components contained in said liquid are gasified so as to be recovered to the lower rectification column.
  • the ultra high purity monosilane producing unit is characterized by comprising: a lower rectification column with a reboiler-condenser disposed in its top portion and a condenser for cooling use disposed below the reboiler condenser; an upper rectification column with a condenser for cooling use disposed in its top portion, the bottom portion of the upper column being opposite the reboiler-condenser of said lower rectification column; means for cooling each of said condensers for cooling use; means for pressurizing, cooling down, and gas-liquid separating a feed monosilane gas; means for introducing the pressurized feed gas obtained by the above means into said lower rectification column; and means for introducing the gas rectified in said lower rectification column into said upper rectification column; wherein a high pressure gaseous monosilane product or liquid monosilane product having an ultra high purity is taken out of the bottom portion of said upper rectification column.
  • an impure monosilane gas is used as a feed.
  • composition of a feed monosilane gas used in the embodiment of the present invention and the boiling points of its components are as shown in Table 1.
  • a double rectification column is composed of a lower rectification column 1 and an upper rectification column 2, where a reboiler-condenser RC is disposed in the top portion of said lower rectification column 1 and a condenser for cooling use C 1 is disposed under this reboiler-condenser RC.
  • condensers for cooling use C 2 and C 3 are disposed in the top portion of said upper rectification column 2.
  • a feed monosilane gas having the composition given in Table 1 is introduced at a temperature of about 0 °C and a pressure of about 2.5 kg/cm 2 G to a compressor 3 through a pipe P 1 , where it is warmed to a temperature of about 40 °C and pressurized to about 30 Kg/cm 2 G. Then, the feed gas is introduced to a cooler 4 through a pipe P 2 so as to be cooled down to a temperature of about -20 °C while maintaining its high pressure, and its heavy fraction is consequentially liquefied. The resulting gas-liquid mixture is thereafter introduced to a gas-liquid separator 5 through a pipe P 3 , where the heavy fraction is separated as a liquid. This liquid part will be returned for reuse to the feed system from the bottom portion of the gas-liquid separator 5 by way of a pipe P 4 , a valve V 1 and a pipe P 5 .
  • the gas remaining in the gas-liquid separator 5 is introduced at a temperature of about -20 °C and a pressure of about 30 kg/cm 2 G between the rectifying portion a and rectifying portion b disposed respectively in the lower portion and middle portion of the lower rectification column 1 through a pipe P 6 , and passed through rectifying portion b .
  • a part of the gas passed through the said rectifying portion b is condensed and liquefied in the condenser C 1 for cooling use which has been cooled at about -34 °C by a refrigerant F 1 coming through a pipe P 7 , and the resulting liquid is caused to flow down in the rectifying portion b as a reflux liquid so as to be subjected to gas-liquid contact with a rising gas.
  • the heavy fraction in the liquid passing through the rectifying portion b is concentrated and the light fraction in the gas also passing there is concentrated.
  • the liquid which has flowed down through the rectifying portion b is further passed through the rectifying portion a , and reservoired in the bottom portion of the rectification column 1.
  • This reservoired liquid is passed through a pipe P 8 and a pipe P 9 and introduced to a reboiler R 1 heated by a heating source (warm water) F 2 so as to be evaporated, and the resulting gas is taken out therefrom through a pipe P 10 and introduced below the rectifying portion a .
  • a heating source warm water
  • the gas introduced below said rectifying portion a from said pipe P 10 rises through the rectifying portion a , where it is rectified in a gas-liquid contact with the liquid flowing down through the rectifying portion a . Furthermore, the gas which has risen through the rectifying portion a rises through the rectifying portion b after joining the gas coming from said pipe P 6 .
  • a part of the gas is liquefied in the condenser for cooling use C 1 so as to be used as a reflux liquid in the rectifying portion b , and the remaining part thereof rises through a rectifying portion c disposed in the upper portion of said lower rectification column 1 and introduced to the reboiler-condenser RC, where almost all of a part of monosilane in the same gas and high boiling point materials including monochlorosilane are liquefied and the resulting liquid is used as a reflux liquid in the rectifying portion c , rectifying portion b and rectifying portion a .
  • liquid monosilane reservoired in the bottom portion of said upper rectification column 2 at a position adjacent the reboiler-condenser RC and low boiling point materials such as hydrogen contained in the liquid monosilane are evaporated, thereby increasing the purity of the liquid monosilane.
  • the gas which has not been liquefied in the reboiler-condenser RC is taken out of its top portion through a pipe P 12 , slightly reduced in pressure by means of a valve V 2 , and introduced between a rectifying portion d and rectifying portion e respectively disposed in the lower portion and middle portion of the upper rectification column 2.
  • the mixed gas of monosilane and hydrogen introduced in said upper rectification column 2 is passed through the rectifying portion e and cooled down by means of the condensers for cooling use C 3 and C 2 so that monosilane is liquefied.
  • the liquefied monosilane is caused to flow down through the rectifying portion e and rectifying portion d , wherein the liquid monosilane becomes a reflux liquid in the rectifying portion e and rectifying portion d .
  • This reflux liquid is rectified in contact with the gas rising from below, and reservoired at a pressure of about 30 kg/cm 2 G as high purity monosilane in the bottom portion of said upper rectification column 2 opposite the reboiler-condenser RC.
  • a high pressure gaseous monosilane product having an ultra high purity will be taken out through a pipe P 13 and a valve V 3 and a high pressure liquid monosilane product having an ultra high purity will be also taken out through a pipe P 14 and a valve V 4 .
  • Hydrogen gas not liquefied in the condensers for cooling use C 3 and C 2 , is taken out of the top portion of said upper rectification column 2 through a pipe P 15 , regulated in pressure by means of a valve V 5 and discharged as waste gas.
  • liquid nitrogen F 3 is introduced as a refrigerant through a pipe P 16 .
  • the liquid nitrogen is evaporated in the condenser for cooling use C 2 , it is taken out thereof through a pipe P 17 , reduced in pressure by means of a valve V 6 , and then used again as a refrigerant in the condenser for cooling use C 3 .
  • the resulting warmed nitrogen gas is taken out through a pipe P 18 .
  • Other refrigerants having a temperature of below -80 °C or less, such as liquefied ethylene or liquefied methane, can be used as the refrigerant in the condenser for cooling use C 2 .
  • valve V 7 is inserted between the pipes P 5 and P 8 , which will be opened when a part of the liquid reservoired in the bottom portion of said lower rectification column 1 is desired to return to the feed system as required.
  • the ultra high purity monosilane producing method and unit according to the present invention are highly advantageous as mentioned above, i.e. capable of easily and continuously obtaining high pressure monosilane gas and high pressure liquid monosilane, each having an ultra high purity, and capable of making the whole of the producing plant compact because its dimensions are satisfactorily reduced in accordance with an extent of higher pressure, as compared with a producing plant for low pressure monosilane gas.
  • Fig. 1 is an explanatory view of an installation for carrying out the ultra high purity monosilane producing method and unit according to the present invention.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Separation By Low-Temperature Treatments (AREA)

Claims (6)

  1. Procédé de production de monosilane à pureté extrêmement élevée qui comprend les étapes consistant à:
    mettre sous pression et condenser partiellement un monosilane gazeux d'alimentation;
    séparer les phases gazeuse et liquide du monosilane d'alimentation partiellement condensé;
    introduire la phase gazeuse à l'étage central d'une colonne de rectification inférieure (1) et y rectifier la phase gazeuse;
    introduire un gaz produit par cette rectification dans une colonne de rectification supérieure (2) et y rectifier ce même gaz; et
    retirer un produit monosilane gazeux ou un produit monosilane liquide sous pression élevée ayant une pureté extrêmement élevée produit par cette rectification, de la partie inférieure de ladite colonne de rectification supérieure.
  2. Procédé selon la revendication 1, qui comprend l'étape consistant à: chauffer un liquide stocké dans la partie inférieure de ladite colonne de rectification inférieure (1) au moyen d'un rebouilleur (R1), les composants à faible poids d'ébullition contenus dans ledit liquide étant gazéifiés de manière à être récupérés dans la colonne de rectification inférieure.
  3. Procédé selon la revendication 1 ou 2, comprenant l'étape consistant à procurer un réfrigérant à un moyen de refroidissement (C1) à un niveau intermédiaire de ladite colonne inférieure (1).
  4. Appareil produisant du monosilane à pureté extrêmement élevée qui comprend:
    une colonne de rectification inférieure (1) ayant un rebouilleur-condenseur (RC) disposé dans sa partie supérieure;
    une colonne de rectification supérieure (2) ayant, disposé dans sa partie supérieure, un condenseur (C2) destiné à refroidir, la partie inférieure de la colonne supérieure faisant face au rebouilleur-condenseur (RC) de ladite colonne de rectification inférieure;
    un moyen pour refroidir chacun desdits condenseurs (C1, C2) destinés à refroidir;
    un moyen pour mettre sous pression (3), refroidir (4) et séparer par condensation partielle un monosilane gazeux d'alimentation;
    un moyen (5) pour séparer les phases gazeuse et liquide dudit gaz partiellement condensé;
    un moyen (P6) pour introduire le gaz dans ladite colonne de rectification inférieure (1); et
    un moyen (P12) pour introduire le gaz, rectifié dans ladite colonne de rectification inférieure, dans ladite colonne de rectification supérieure (2);
       dans lequel un produit monosilane gazeux ou un produit monosilane liquide sous pression élevée ayant une pureté extrêmement élevée est soutiré de la partie inférieure de ladite colonne de rectification supérieure (2).
  5. Appareil selon la revendication 4, comprenant un moyen de refroidissement (C1) disposé dans ladite colonne inférieure entre le point d'introduction de la phase gazeuse et le rebouilleur-condenseur (RC).
  6. Appareil selon la revendication 5, dans lequel ledit moyen de refroidissement (C1) est un condenseur.
EP95913886A 1994-03-30 1995-03-22 Procede de production de monosilane de haute purete et appareil pour cette production Expired - Lifetime EP0701533B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP82618/94 1994-03-30
JP08261894A JP3501171B2 (ja) 1994-03-30 1994-03-30 超高純度モノシランの製造方法及び装置
PCT/EP1995/001084 WO1995026927A1 (fr) 1994-03-30 1995-03-22 Procede de production de monosilane de haute purete et appareil pour cette production

Publications (2)

Publication Number Publication Date
EP0701533A1 EP0701533A1 (fr) 1996-03-20
EP0701533B1 true EP0701533B1 (fr) 1998-05-13

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ID=13779460

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Application Number Title Priority Date Filing Date
EP95913886A Expired - Lifetime EP0701533B1 (fr) 1994-03-30 1995-03-22 Procede de production de monosilane de haute purete et appareil pour cette production

Country Status (6)

Country Link
US (1) US5617740A (fr)
EP (1) EP0701533B1 (fr)
JP (1) JP3501171B2 (fr)
KR (1) KR960702815A (fr)
DE (1) DE69502458T2 (fr)
WO (1) WO1995026927A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009003163A1 (de) * 2009-05-15 2010-11-25 Wacker Chemie Ag Silandestillation mit reduziertem Energieeinsatz
EP2599537A4 (fr) 2010-07-30 2014-09-17 Jx Nippon Oil & Energy Corp Système de traitement de gaz d'échappement
EP2426089A1 (fr) * 2010-09-03 2012-03-07 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de séparation de monosilane dans des mélanges riches en chlorosilanes
CN113772676A (zh) * 2021-09-28 2021-12-10 南通友拓新能源科技有限公司 一种低污染高纯度电子级多晶硅提纯方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163514A (ja) * 1984-09-03 1986-04-01 Mitsui Toatsu Chem Inc モノシランの精製方法
DE3518283C2 (de) * 1985-05-22 1994-09-22 Messer Griesheim Gmbh Verfahren zur Entfernung leichter flüchtiger Verunreinigungen aus Gasen
JP2832786B2 (ja) * 1992-12-01 1998-12-09 日本エア・リキード株式会社 超高純度モノシランの製造方法及び装置

Also Published As

Publication number Publication date
EP0701533A1 (fr) 1996-03-20
JPH07267625A (ja) 1995-10-17
JP3501171B2 (ja) 2004-03-02
DE69502458T2 (de) 1999-02-11
KR960702815A (ko) 1996-05-23
WO1995026927A1 (fr) 1995-10-12
DE69502458D1 (de) 1998-06-18
US5617740A (en) 1997-04-08

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