EP0635075A1 - Procede de revetement de substrats - Google Patents

Procede de revetement de substrats

Info

Publication number
EP0635075A1
EP0635075A1 EP92921083A EP92921083A EP0635075A1 EP 0635075 A1 EP0635075 A1 EP 0635075A1 EP 92921083 A EP92921083 A EP 92921083A EP 92921083 A EP92921083 A EP 92921083A EP 0635075 A1 EP0635075 A1 EP 0635075A1
Authority
EP
European Patent Office
Prior art keywords
gases
gas
compounds
reaction
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP92921083A
Other languages
German (de)
English (en)
Inventor
Holger JÜRGENSEN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP0635075A1 publication Critical patent/EP0635075A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Definitions

  • the invention relates to a method for coating substrates with a CVD process according to the preamble of claim 1, that is to a method for coating substrates by means of gas phase deposition, and to the use of such a method and a device to carry out the procedure.
  • WO 89/00335 describes a special MOCVD process for the production of III-V semiconductors, in which the elements of the 5th main group are used in particular as Hydrogen compounds and the elements of the 3rd main group are supplied as chlorine compounds formed in the reactor.
  • HC1 is introduced, from which the metal-chlorine compound is formed with the formation of hydrogen molecules.
  • a carrier gas is also used;
  • WO 89/00335 proposes as carrier gases, in addition to the hydrogen (H2) nitrogen (N2) or noble gases most commonly used in CVD processes, such as argon, helium or xenon.
  • reaction gases ie gases which contain the elements required for the coating and react during the coating process with the elimination of this element, are almost exclusively toxic, pyrophoric or explosive gases such as hydride (SiH4, AsH3 , PH3, SbH3, H2S, H2Se and others) or organometallic compounds.
  • the invention is based on the object of specifying a method for coating substrates using a CVD process using at least one reaction gas which is passed over the substrate to be coated by means of at least one carrier gas, in which the use of flammable, explosive and / or toxic compounds can be dispensed with, and in which no such compounds arise during the course of the process.
  • the solution according to the invention consists in that on the one hand an inert gas or a mixture of inert gases is used as the carrier gas, and on the other hand that only gases are used as reaction gases which consist of non-toxic and / or non-flammable compounds and which also form non-toxic or non-flammable compounds after the reaction.
  • the invention is therefore based on the idea of eliminating the hydrogen generally used up to now in CVD processes and, moreover, toxic gases such as hydrides and dangerous organometallic compounds or flammable or even explosive compounds and adding them by non-hazardous gases replace.
  • the method according to the invention thus has the advantage that it makes the security systems necessary in previous CVD methods superfluous.
  • the installation costs can thus be considerably reduced and the most diverse layer materials can thus be produced much more cost-effectively.
  • the system costs can be further reduced if the device constructed in a manner known per se has a gas cleaning unit for the carrier gas.
  • the carrier gas and optionally the reaction gases can thus be reused at least in part.
  • the requirements for the tightness of the device, including the reactor are lower, since the presence of air or atmospheric oxygen is no longer necessarily harmful due to the low level of leakage.
  • the inert carrier gases (claim 3).
  • the reaction gases which can be used are, for example, metallo-magnetic compounds and in particular the metallurgical compounds described in DE 36 31 469 AI or DE 37 26 485 AI. ganic compounds are used (claims 4 to 6).
  • ganic compounds are used (claims 4 to 6).
  • Nitrogen is particularly suitable as a carrier gas because it is the cheapest gas. Above all, however, the layer quality can be positively influenced by the use of nitrogen of appropriate purity and in particular of the quality 7.0 or 8.0.
  • the method according to the invention allows the production of a wide variety of layer materials which have amorphous, polycrystalline or monocrystalline structures.
  • ceramic or semiconducting layer materials and materials with special optical properties are produced, it being possible without further ado to apply the material layers to basic substrates adapted to the respective application, which lead to the respective electronic, chemical, optical or mechanical properties.
  • reaction gases consist not only of non-toxic and / or non-flammable compounds - preferably compounds with both properties - but also of non-explosive compounds.
  • the compounds used instead of the mostly used hydrides and organometallic compounds with high explosiveness or toxicity preferably have a vapor pressure and a thermal decomposition behavior which makes them suitable for use in corresponding coating processes without special measures.
  • non-explosive carrier gas only the combination of a non-explosive carrier gas and the use of non-pyrophoric element carriers or reaction gases makes the coating process considerably safer than conventional methods.
  • the requirements for the safety systems can be drastically reduced due to the elimination of the explosive hydrogen.
  • the requirements for safety systems and also for the device itself can be additionally reduced due to the absence of toxicity of the compounds in connection with the use of non-explosive gases.
  • Another advantage of the combination of non-explosive carrier gas and non-pyrophoric compounds is that the use of nitrogen of appropriate purity (quality 7.0 or 8.0) not only does not negatively, but even positively influences the layer qualities.
  • the invention therefore makes it possible to considerably reduce the costs for the process equipment with regard to safety, leak tightness and monitoring devices, to use other materials and components for the production of the systems, to carry out the processes in generally accessible laboratories or operating facilities, the outlay of personnel training and safety training and to enable the production of expensive materials (for example compound semiconductors, such as GaAs and other III-V or II-VI compounds etc.) in a substantially more cost-effective manner.
  • expensive materials for example compound semiconductors, such as GaAs and other III-V or II-VI compounds etc.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Il est décrit un procédé de revêtement de substrats selon un processus CVD (de déposition en phase gazeuse par procédé chimique) avec utilisation d'au moins un gaz réactionnel qui est envoyé sur le substrat à revêtir par l'intermédiaire d'au moins un gaz vecteur. Le procédé selon l'invention est caractérisé en ce qu'il comprend, en combinaison, les particularités suivantes: le gaz vecteur est un gaz inerte ou un mélange de gaz inertes; le/ou les gaz réactionnels comprennent des composés non toxiques et/ou non inflammables et forment, après réaction, des composés également non toxiques ou non inflammables.
EP92921083A 1991-10-09 1992-10-09 Procede de revetement de substrats Ceased EP0635075A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4133497 1991-10-09
DE4133497 1991-10-09
PCT/DE1992/000853 WO1993007312A1 (fr) 1991-10-09 1992-10-09 Procede de revetement de substrats

Publications (1)

Publication Number Publication Date
EP0635075A1 true EP0635075A1 (fr) 1995-01-25

Family

ID=6442374

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92921083A Ceased EP0635075A1 (fr) 1991-10-09 1992-10-09 Procede de revetement de substrats

Country Status (3)

Country Link
EP (1) EP0635075A1 (fr)
DE (1) DE4293092D2 (fr)
WO (1) WO1993007312A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
DE3726485A1 (de) * 1987-08-08 1989-02-16 Merck Patent Gmbh Metallorganische verbindungen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9307312A1 *

Also Published As

Publication number Publication date
DE4293092D2 (de) 1994-10-20
WO1993007312A1 (fr) 1993-04-15

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