EP0632344A2 - Heizelement und dieses Elements verwendende Bildheizvorrichtung - Google Patents

Heizelement und dieses Elements verwendende Bildheizvorrichtung Download PDF

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Publication number
EP0632344A2
EP0632344A2 EP94108189A EP94108189A EP0632344A2 EP 0632344 A2 EP0632344 A2 EP 0632344A2 EP 94108189 A EP94108189 A EP 94108189A EP 94108189 A EP94108189 A EP 94108189A EP 0632344 A2 EP0632344 A2 EP 0632344A2
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EP
European Patent Office
Prior art keywords
film
heater
carbon film
diamond
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94108189A
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English (en)
French (fr)
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EP0632344A3 (de
EP0632344B1 (de
Inventor
Yasushi C/O Canon Kabushiki Kaisha Taniguchi
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Canon Inc
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Canon Inc
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Filing date
Publication date
Priority claimed from JP12710293A external-priority patent/JPH06338380A/ja
Priority claimed from JP13353693A external-priority patent/JPH06348153A/ja
Priority claimed from JP13617193A external-priority patent/JPH06348154A/ja
Priority claimed from JP19217793A external-priority patent/JPH0744037A/ja
Priority claimed from JP5270891A external-priority patent/JPH07130456A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0632344A2 publication Critical patent/EP0632344A2/de
Publication of EP0632344A3 publication Critical patent/EP0632344A3/de
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Publication of EP0632344B1 publication Critical patent/EP0632344B1/de
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/20—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat
    • G03G15/2003—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat
    • G03G15/2014—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat using contact heat
    • G03G15/2064—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat using contact heat combined with pressure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/20—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat
    • G03G15/2003—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat

Definitions

  • the present invention relates to an image forming apparatus such as a copying machine, a laser beam printer or the like, and more particularly to a heater and an image heating device, adapted for heating an unfixed image.
  • FIG. 51 An image heating device utilizing a fixed heater and a thin film sliding on the heater, as shown in Fig. 51, is proposed for example in U.S. Patent No. 5,149,941.
  • Fig. 51 there are shown a heater 500, a film 505 sliding on the heater 500, a driving roller 506 for driving the film 505, driven roller 507, and a pressure roller 508 in contact with the heater 500 across the film 505.
  • the heater 500 is provided with a substrate 501, a resistance layer 502 provided on the substrate 501 and generating heat by electric current supply, an insulating protective layer 503 for protecting the resistance layer 502, and a supporting frame 504 for supporting the foregoing elements.
  • Thermal fixation of an unfixed image is achieved by transmitting heat of the heater through the insulating protective layer thereon and a sliding contact face of the film.
  • the insulating protective layer and the film because of sliding contact between the insulating protective layer and the film, there generally occurs significant abrasion of the film when the total distance of sliding movement reaches about 60 km.
  • the resulting abraded powder is unevenly deposited on the roller for driving the film. As a result, the film driving speed becomes irregular, so that the fixation of the unfixed image also becomes ununiform.
  • An object of the present invention is to provide a heater provided with a protective layer excellent in sliding performance to a film, and an image heating device.
  • Another object of the present invention is to provide an image heating device provided with a film excellent in sliding performance to a heater.
  • Still another object of the present invention is to provide a heater and an image heating device, provided with a protective layer excellent in sliding performance and thermal conductivity.
  • Still another object of the present invention is to provide a heater of which protective layer is provided, at least on the surface thereof, with a hard carbon film, a hydrogenated amorphous carbon film or a diamond-like layer.
  • Still another object of the present invention is to provide an image heating device provided, at the sliding portion between a heating member and a film, with a hard carbon film, a hydrogenated amorphous carbon film or a diamond-like layer.
  • a heater of the present invention is shown in Figs. 1 and 2, seen respectively from the side of the heat-generating resistor and the rear (substrate) side.
  • the heater 1 is provided with an electrical insulating slender substrate 2 of a high heat resistance and low heat capacity, an electrically heat-generating member 3 formed as a narrow straight stripe on a face (surface side) of the substrate 2 along the longitudinal direction thereof at the center of the width thereof, electrode terminals (connecting terminals) 4, 5 formed on the surface of the substrate at both ends of the heat-generating resistor, an electrical insulating protective layer 6 composed for example of glass and covering the surface, bearing the heat-generating resistor, of the substrate 2, and a temperature detecting element 7, such as a thermistor, formed on the other face (rear side) of the substrate 2.
  • a temperature detecting element 7 such as a thermistor
  • the substrate 2 is composed for example of a ceramic plate, such as of Al2O3, AlN or SiC, of a width of 10 mm, a thickness of 1 mm and a length of 240 mm.
  • the heat-generating resistor 3 is a patterned layer of Ag/Pd (silver-palladium alloy), RuO2 or Ta2N coated by screen printing, followed by sintering in air, for example of a thickness of 10 ⁇ m and a width of 1 mm.
  • the electrode terminals 4, 5 are patterned layers for example of Ag, coated with a thickness of 10 ⁇ m by screen printing, followed by sintering in air.
  • the electrodes 4, 5 are connected by a connector (not shown) to wires for electric power supply.
  • the heat-generating resistor 3 is positioned, in the cross section, at the approximate center of the width of a fixing nip 15.
  • the heater 1 is in contact, at the side of the electrical insulating protective layer 6 thereof, with a sliding film.
  • a voltage is applied between the electrode terminals 4, 5 of the heat-generating resistor 3 from an AC power source 12 to heat the heat-generating resistor 3, whereby temperature of the heater 1 rises.
  • the temperature of the heater 1 is detected by the temperature detecting element 7 at the rear side of the substrate, and the detected information is fed back to a power supply control circuit to control the power supply from the AC power source 12 to the heat-generating resistor 3, thereby maintaining the heater at a predetermined temperature.
  • the temperature detecting element 7 of the heater 1 is provided at a position on the rear side of the substrate corresponding to the position of best heat response on the fixing face, namely the position of the heat-generating resistor 3 on the surface side of the substrate.
  • the hard carbon film of the present invention macroscopically has an amorphous structure, consisting of carbon atoms of sp2, sp3 bondings, and is almost free from hydrogen, less than 1 atom % even when it is present.
  • the density of the hard carbon film is within a range larger than that of graphite (2.26 g/cm3) and smaller than that of diamond (3.51 g/cm3).
  • the physical properties of the hard carbon film are represented, for example, by a hardness of 2000 - 5000 kg/mm2, a friction coefficient ⁇ ⁇ 0.2 and an electrical resistance (volume resistivity) of 105 - 1011 ⁇ cm.
  • the hard carbon film to be employed in the present invention can be formed, for example, by plasma sputtering, ion beam sputtering, ion beam evaporation, ion beam mixing, ion plating, cluster ion beam, ion implantation, arc discharge or laser evaporation.
  • the solid carbon source to be used in these methods can be graphite or glass-like carbon of a high purity.
  • carbon-containing gas for example a hydrocarbon such as methane, ethane, propane, ethylene, benzene or acetylene; a halogenated hydrocarbon such as methylene chloride, carbon tetrachloride, chloroform or trichloroethane; an alcohol such as methyl alcohol or ethyl alcohol; a ketone such as (CH3)2CO or (C6H5)2CO; or CO or CO2 is used as a gaseous carbon source, it is used as a carbon ion beam after mass separation.
  • a raw material gas for the assisting ion beam can be He, N2, H2, O2, H2O, Ar, Ne, Kr or Xe.
  • the thickness of the hard carbon film to be formed on the insulating protective film or the heat-generating resistor of the heater can be within a range from several nanometer to several tens of microns, preferably from several tens of nanometer to several microns, because a film thinner than several nanometers cannot provide sufficient lubricating or insulating ability, while a film thickner than several tens of micron can be easily peeled off from the substrate by the stress of the film.
  • a film of a high electrical resistance is required in order to secure sufficient insulating ability.
  • a thickness of several to several hundred nanometers is preferable, because a thickness smaller than several nanometers cannot provide sufficient lubricating ability while a thickness larger than several hundred nanometer may lead to the peeling-off of the carbon film from the plastic film or the curling of the plastic film due to the stress in the carbon film. If the plastic film still curls within the above-mentioned preferred thickness range of the carbon film, the hard carbon film may be formed on both sides of the plastic film.
  • the density of the hard carbon film is located, as explained before, between those of graphite and diamond, but practically needs to be equal to or higher than 2.0 g/cm3.
  • a film whose density is less than 2.0 g/cm3 is of low hardness, low electrical resistance and low adhesion strength because of an increased content of the sp2-bonded (graphite) component, and is not suitable as the lubricating protective film of the present invention.
  • the lubricating protective film of the present invention may be formed not only on the insulating protective film or the heat-generating resistor of the heater or on the plastic film, but also on a heater holder portion coming into contact with the plastic film, thereby further improving the sliding performance between the heater and the film.
  • the present invention is to improve the abrasion resistance and the sliding performance between the heater and the film by forming a hard carbon film as a lubricating protective layer by gaseous synthesis on the insulating protective film or the heat-generating resistor of the heater coming into contact with the plastic film, or on the plastic film, thereby extending service life of the heater.
  • Fig. 3 is a magnified partial cross-sectional view of a thermal fixing device utilizing a heater embodying the present invention, wherein a heater 1 is supported by a heater support portion 9 across a heat-insulating heater holder 8.
  • a ceramic substrate 2 In the heater 1 there are provided a ceramic substrate 2; a heat-generating resistor 3 consisting of Ag/Pd; a glass-liked insulating protective layer 6; a hard carbon film 18 formed on said insulating protective layer 6; and a temperature detecting element 7.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing the film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow, in contact with the edges of the heater holder 8 while sliding on a face of the heater 1 in close contact with the face of the heater, by driving member (not shown) or by rotating force of the pressure roller 11.
  • the heat generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion 15 together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 4A to 4E are schematic cross-sectional views of the heater of first embodiment, wherein shown are electrode terminals 4, 5 composed of Cu; a heater holder 8; an electrode tab 12; AuSi solder 13; and a wire 14.
  • the heater of the present embodiment was prepared at first by applying Ag/Pd paste by screen printing on an Al2O3 substrate 2, followed by burning in air.
  • the heat-generating resistor 3, was trimmed to a desired resistance after the resistance was measured.
  • Cu paste was applied by screen printing, and the electrode terminals 4, 5 were formed by burning under controlled oxygen partial pressure (Fig. 4A).
  • the insulating protective film 6 was formed by applying low-softening lead silicate glass by screen printing, followed by burning in air (Fig. 4B).
  • a hard carbon film 18 was formed with a thickness of 500 nm by DC sputtering (Fig. 4C).
  • FIG. 5 is a schematic view of a DC magnetron sputtering apparatus employed for the formation of the hard carbon film, wherein shown are a vacuum chamber 40; a substrate 41; a graphite target 42 of a purity of 99.99%; a gas introduction system 43; a DC power source 44; and an evacuating system 45.
  • a vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr
  • Ar was introduced from the gas introducing system to a pressure of 0.9 Pa.
  • the substrate was maintained at the room temperature, and there were employed a discharge power of 50 W and a substrate-target distance of 40 mm.
  • pre-sputtering of target was conducted at 300 W for 20 minutes.
  • HFS hydrogen forward scattering spectrometry
  • a hydrogen concentration was 0 atom %.
  • the film hardness measured with a thin film hardness meter, was 2200 kg/mm2 in Vickers hardness.
  • the friction properties were evaluated by pin-on-disk method. The friction coefficient was 0.10 in a measurement conducted in air with a relative humidity of 45%, employing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 2.2 N and a sliding velocity of 0.04 m/s.
  • the density, measured by RBS (Rutherform backscattering spectrometry) was 2.8 g/cm3.
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13 (Fig. 4C). Subsequently the wire 14 was connected by pressure to the electrode tab 12, and the heater 1 was adhered to the heater holder 8 (Figs. 4D and 4E).
  • the surfaces of the electrode terminals 4, 5 were Au flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the thermal fixing device thus prepared was free from formation of abraded powder by the friction between the heater and the plastic film, thus being capable of maintaining stable sliding performance for a long period.
  • Fig. 6 is a magnified partial cross-sectional view of a thermal fixing device employing a heater embodying the present invention, wherein same components as those in Fig. 3 are represented by the same reference numerals and will not be explained further in the following.
  • Fig. 6 there are shown a groove G, and a hard carbon film 18.
  • a groove G of a dimension of 350 mm x 2 mm x 12 ⁇ m for forming the heat-generating resistor was mechanically formed on an Al2O3 substrate same as in the embodiment 1.
  • Ag/Pd paste was applied with a thickness of 11 ⁇ m by screen printing, followed by burning in air.
  • the heat-generating resistor 3 was then trimmed to a desired resistance after the resistance was measured.
  • the substrate was set in a sputtering apparatus (not shown), and a W (tungusten) layer 3a was formed with a thickness of 1 ⁇ m on the resistor layer in order to prevent mutually diffusion of Ag/Pd and C.
  • a hard carbon film of a thickness of 600 nm was formed with a dual ion beam sputtering apparatus shown in Fig. 7, in which shown are a vacuum chamber 20; a sputtering ion source 21; an assistant ion source 22; a graphite target 23; a substrate 24; a gas introducing system 25; and a vacuum system 26.
  • a vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr, and Ar was introduced at 20 sccm from the gas introducing system to the sputtering ion source and the assistant ion source to a pressure of 4 x 10 ⁇ 4 Torr.
  • the graphite target was sputtered by the sputtering ion source with an Ar ion beam of an ion energy of 1 keV and an ion current density of 4 mA/cm2, and simultaneously the substrate was irradiated by the assistant ion source with an Ar ion beam of an ion energy of 200 eV and an ion current density of 0.1 mA/cm2.
  • the friction coefficient was 0.08 in a measurement conducted in air of a relative humidity of 50%, employing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 1.0 N and a sliding velocity of 0.04 m/s.
  • the density, measured by RBS (Rutherford backscattering spectrometry) was 2.6 g/cm3, and the hydrogen concentration in the film, measured by HFS (hydrogen forward scattering spectrometry) was less than 1 atom %.
  • RBS Ruththerford backscattering spectrometry
  • HFS hydrogen forward scattering spectrometry
  • the thermal fixation of the recording material was conducted in the same manner as in the embodiment 1 using a thermal fixing device equipped with thus obtained heater. As a result, stable fixing ability and durability were obtained as in the embodiment 1.
  • FIG. 8 is a schematic view of a DC magnetron sputtering apparatus employed in the embodiment 1, in which an assistant ion source was added.
  • a vacuum chamber 30 an assistant ion beam source 31; an ionizing chamber 32; a gas introducing system 33; an ion beam extracting electrode 34; a substrate 35; a graphite target 36; a vacuum system 37; and a DC power source 38.
  • the film hardness measured with the thin film hardness meter as in the embodiment 1, was 2700 kg/mm2 in Vickers hardness.
  • the friction properties were evaluated by pin-on-disk method. The friction coefficient was 0.07, in a measurement conducted in air of relative humidity of 45%, employing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 1.0 N and a sliding velocity of 0.04 m/s.
  • a heater was then completed by connecting the electrode tabs and wires to the electrode terminals and adhering to the heater holder.
  • the thermal fixation of the recording material was conducted in the same manner as in the embodiment 1 using a thermal fixing device equipped with thus obtained heater. As a result, stable fixing ability and durability were obtained as in the embodiment 1.
  • a hard carbon film of a thickness of 450 nm was formed on the insulating protective film of the heater under the same conditions as in the embodiment 3, except that the ion current density of the Ar ion beam from the assistant ion source was fixed at 0.2 mA/cm2 and the ion energy was varied within a range of 0 - 500 eV.
  • Samples 1 - 4 of thus prepared heaters were subjected to the evaluation of hydrogen concentration, film density, film hardness, electrical resistance (volume resistivity) and friction coefficient. The obtained results are summarized in Table 1.
  • the hydrogen concentration was measured by HFS, density by RBS, hardness by the thin film hardness meter, electrical resistance by the four probe method and friction coefficient under the same conditions as in the embodiment 3.
  • a thermal fixing device equipped with thus obtained heater was used for the thermal fixation of the recording material as in the embodiment 1.
  • the samples 1 to 3 indicate stable fixing performance and durability as in the embodiment 1, but the sample 4 indicates slight local film peeling off with the increase in the number of fixing operations.
  • a hard carbon film of a thickness of 50 nm was formed on both faces 10a of a polyimide film as shown in Fig. 9, under the same conditions as in the embodiment 1. Also a hard carbon film of a thickness of 200 nm was similarly formed on a portion 8a, coming into contact with the plastic film, of the heater holder.
  • a thermal fixing device employing thus obtained heater and film, was subjected to thermal fixation of the recording material as in the embodiment 1, and indicated stable fixing performance and durability as in the embodiment 1.
  • a hydrogenated amorphous carbon film hereinafter written as a-C:H film
  • a diamond-like carbon film hereinafter written as DLC film
  • the a-C:H film or DLC film of the present invention is featured by a thermal conductivity of 200 - 600 W/m ⁇ K, an electrical resistance (volume resistivity) of 108 - 1011 ⁇ cm and a hardness of 2000 - 5000 kg/mm2.
  • the a-C:H film or DLC film to be employed in the present invention may be formed, for example, by microwave plasma CVD, DC plasma CVD, high frequency plasma CVD, magnetic field microwave plasma CVD, ion beam sputtering, ion beam evaporation, or reactive plasma sputtering.
  • Examples of the carbon-containing raw material gas to be employed in these method include hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane; alcohols such as methyl alcohol and ethyl alcohol; ketones such as (CH3)2CO and (C6H5)2CO; and gasses such as CO and CO2; and mixtures thereof with other gasses such as N2, H2, O2, H2O and Ar.
  • hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene
  • halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane
  • alcohols such as methyl alcohol and ethyl alcohol
  • ketones such as (CH3)2CO and (C6H5)2CO
  • the a-C:H film or the DLC film contains hydrogen in several tens of atom % in the film.
  • the properties of the film vary significantly with the hydrogen content.
  • an a-C:H film containing hydrogen in 50 atom % or higher is a transparent polymer-like film having a large optical band gap, a high electrical resistance but a low hardness and a high thermal conductivity.
  • an a-C:H film containing hydrogen in 10 - 40 atom % is featured by a high thermal conductivity, a high insulating property and a high hardness, having a Vickers hardness as high as 2000 - 5000 kg/mm2, an electrical resistance exceeding 108 ⁇ cm, a thermal conductivity exceeding 200 W/m ⁇ K and a friction coefficient less than 0.2. These properties are considered attributable to the sp3 bonds, present in a proportion of 40 - 70% in the film. Consequently, for the protective film of the present invention, there should be employed the a-C:H film or DLC film with a hydrogen content of 10 40 atom %. Also it is difficult to clearly distinguish the a-C:H film from the DLC film.
  • Both films are macroscopically amorphous, contain hydrogen in the film, consist of sp2- and sp3-bonded carbon and have similar physical properties as explained above.
  • the DLC film in the present invention microscopically has the crystalline structure of diamond, for example a diffraction pattern specified as diamond in electron beam diffraction analysis.
  • the heat-generating resistor is formed for example by sputtering, and it is trimmed, if necessary, to a desired resistance after the resistance is measured. Then electrode terminals are formed similarly by the sputtering of Au, Ag or Cu. Then the insulating protective layer, consisting for example of low-softening lead silicate glass, is formed on the heat-generating resistor and the electrode terminals by screen printing, followed by burning.
  • the heater is prepared by forming on the insulating protective layer, a protective layer consisting of an a-C:H film or a DLC film.
  • the thickness of the a-C:H film or DLC film should be in a range capable of ensuring a mechanical strength and a friction coefficient for protecting the heater from the fixing pressure at the use of the heater, and can be in a range of several nanometers to several ten microns, preferably from several ten nanometers to several microns.
  • the formation of the heat-generating resistor and the electrode terminals is not limited to a PVD method such as sputtering, vacuum evaporation or ion plating, but may also be achieved by a CVD method, plating or screen printing.
  • the heater is completed by mounting the electrode tabs to the electrode terminals for example by soldering, then connecting the wires to the electrode tabs and adhering the heater to the heater holder.
  • the present invention utilizes an a-C:H film or a DLC film formed by gaseous synthesis as the protective layer for the heater in order to improve the abrasion resistance and the sliding performance of the heater protective layer, thereby extending the service life of the heater.
  • Fig. 10 is a magnified partial cross-sectional view of a thermal fixing device utilizing the heater embodying the present invention, wherein a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • the heater 1 is provided with a ceramic substrate 2; an Ag/Pd heat-generating resistor 3; an insulating protective glass layer 6; a protective layer 18a consisting of a DLC film; and a temperature detecting element 7.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing the film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow in contact with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 11A to 11E are schematic cross-sectional views of the heater of the embodiment 6, wherein shown are electrode terminals 4, 5 composed of Cu; a heater holder 8; an electrode tab 12; AuSi solder 13; and a wire 14.
  • the heater of the present embodiment was prepared at first by applying Ag/Pd paste by screen printing on an Al2O3 substrate 2, followed by burning in air.
  • the heat-generating resistor 3 was trimmed to a desired resistance after the resistance was measured.
  • Cu paste was applied by screen printing, and the electrode terminals 4, 5 were formed by burning under a controlled oxygen partial pressure (Fig. 11A).
  • the insulating protective film 6 was formed by applying low-softening lead silicate glass by screen printing, followed by burning in air (Fig. 11B). Subsequently a DLC film 6 was formed with a thickness of 200 nm by ECR plasma CVD (Fig. 11C).
  • FIG. 12 is a schematic view of an ECR plasma CVD apparatus employed for the formation of the DLC film, wherein shown are a plasma chamber 50 of cavity resonator type; a gas introducing system 51; a microwave introducing window 52; a microwave guide tube 53; a magnet 54; a microwave oscillator 55; a substrate and a holder therefor 56; a vacuum chamber 57; and a vacuum system 58.
  • the substrate after electrode formation was placed on the substrate holder, and the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr.
  • C6H6 at 31 sccm and H2 at 14 sccm were introduced from the gas introducing system to a pressure of 3.3 x 10 ⁇ 4 Torr, and plasma was generated in the plasma chamber by introduction of microwave of 2.45 GHz at 1.2 kW.
  • an external magnetic field was formed by the magnet so as to provide ECR conditions of 1600 Gauss at the introducing window, 875 Gauss at the exit of the cavity resonator, and 700 Gauss at the position of the substrate.
  • the DLC film was formed under the application of a voltage of -500 V to the substrate by an unrepresented DC power source.
  • the hardness of the DLC film, measured with the thin film hardness meter was 3000 kg/mm2 in Vickers hardness.
  • the friction properties were evaluated by the pin-on-disk method.
  • the friction coefficient was 0.08 - 0.09 in a measurement conducted in air of relative humidity of 45%, utilizing a ball (5 mm in diameter) of bearing steel as the pin, with a load of 2.2N and a sliding velocity of 0.04 m/s.
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13 (Fig. 11C). Subsequently the wire 14 was maintained in contact with the electrode tab 12 (Fig. 11D), and the heater 1 was adhered to the heater holder 8 (Fig. 11E).
  • the surfaces of the electrode terminals 4, 5 were Au flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the heater thus prepared was capable of efficiently supplying the recording material with heat generated by electric power, and realizing stable heater performance without thermal or electrical deterioration of the components of the heater.
  • the improvement in the abrasion resistance and the sliding performance of the heater protective layer provided a service life more than twice of the conventional service life.
  • FIG. 13 is a schematic view of an ion beam evaporation apparatus, used in the formation of the a-C:H film, wherein shown are a vacuum chamber 60; an ion beam source 61; an ionizing chamber 62; a gas introducing system 63; an ion beam extracting electrode 64; a substrate 65; a substrate holder 66; and a vacuum system 67.
  • the substrate after the electrode formation was placed on the substrate holder, and the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr.
  • CH4 at 16 sccm and H2 at 31 sccm were introduced from the gas introducing system, and the gas pressure was regulated at 3.2 x 10 ⁇ 4 Torr to generate plasma in the plasma chamber.
  • the substrate was irradiated with an ion beam extracted with a voltage of 1 kV applied to the extracting electrode, whereby an a-C:H film of a thickness of 1 ⁇ m was formed in a predetermined position on the insulating protective glass layer.
  • a similarly prepared a-C:H film showed, in HFS (hydrogen forward scattering spectrometry) a hydrogen content of 30 atom %.
  • the film hardness and the friction coefficient, measured in the same manner as in the embodiment 6, were respectively 2500 kg/mm2 and 0.07.
  • the heater was completed in the same manner as in the embodiment 6, by connection of the electrode tabs and the wires and adhesion to the heater holder.
  • this heater could achieve stable fixation as in the embodiment 6.
  • the a-C:H film or DLC film may be formed directly on the resistor 3, without the insulating protective layer 6.
  • a groove for forming the heat-generating resistor is formed in advance on a ceramic substrate, then the heat-generating resistor is formed so as not to protrude from the surface of the ceramic substrate, and an a-C:H film or a DLC film of a high electrical insulation, a high thermal conductivity, a high hardness and a low friction coefficient is formed thereon by gaseous synthesis, as the insulating protective layer.
  • a groove for forming the heat-generating resistor is mechanically formed on the aforementioned ceramic substrate such as of Al2O3, AlN or SiC. More specifically, a peelable film or a resist material is formed on the entire surface of a ceramic substrate of a size of 350 mm x 350 mm, and a groove corresponding to the heat-generating resistor layer, for example of a dimension of 2 mm x 350 mm x 10 ⁇ m is formed in a predetermined position.
  • the heat-generating resistor is formed in the groove by a PVD method such as sputtering, and is trimmed, if necessary to a desired resistance after the resistance is measured.
  • the formation is so conducted that the heat-generating resistor layer does not protrude by more than 2 ⁇ m from the surface of the ceramic substrate. If it protrudes in excess of 2 ⁇ m, the a-C:H film or the DLC film becomes inevitably thicker for obtaining sufficient step coverage and causes peeling off.
  • the electrode terminals are formed by sputtering of Au, Ag or Cu. Then an a-C:H film or a DLC film is formed on the heat-generating resistor to complete the heater substrate.
  • the thickness of the a-C:H film or DLC film should be in a range capable of ensuring a mechanical strength and a friction coefficient for protecting the heater from the fixing pressure at the use of the heater, and can be in a range of several nanometers to several ten microns, preferably from several ten nanometers to several microns.
  • the formation of the heat-generating resistor and the electrode terminals is not limited to a PVD method such as sputtering, vacuum evaporation or ion plating, but may also be achieved by a CVD method, plating or screen printing.
  • the heater of the present invention is completed by mounting the electrode tabs to the electrode terminals of each heater, cut into a desired size, for example soldering, then connecting by pressure the wires to the electrode tabs and adhering the heater to the heater holder. It is also possible to further improve the sliding performance of the heater and the film, by similarly forming an a-C:H film or a DLC film on a portion, coming into contact with the film, of the heater holder.
  • the present invention utilizes an a-C:H film or a DLC film formed by gaseous synthesis as the protective layer for the heater, thereby improving the abrasion resistance and the sliding performance between the heater and the film and extending the service life of the heater.
  • Fig. 14 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention.
  • a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing the film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow in contact with the edges of the heater holder 8 and with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 15A to 15E are schematic cross-sectional views of the embodiment 8, wherein shown are a heater 1; a ceramic substrate 2; an Ag/Pd heat-generating resistor 3; Cu electrode terminals 4, 5; a protective layer 18a consisting of a DLC film; a heater holder 8; an electrode tab 12; an AuSi solder 13; and a wire 14.
  • a groove of a dimension of 350 mm x 2 mm x 12 ⁇ m, for forming the heat-generator resistor was at first mechanically formed on an Al2O3 substrate, and in the groove, the heat-generating resistor 3 was formed by applying Ag/Pd paste by screen printing, followed by burning in air, and was trimmed to a desired resistance after the resistance was measured. In this state the surface of the heat-generating resistor layer coincides with the surface of the ceramic substrate. Then Cu paste was applied by screen printing, and the electrode terminals 4, 5 were formed by burning under controlled oxygen partial pressure (Fig. 15A). Then the DLC film 18a, serving as the insulating protective film, was formed (Fig. 15B). The DLC film was formed with the apparatus shown in Fig. 12.
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13 (Fig. 15C). Subsequently the wire 14 was maintained in contact with the electrode tab 12 (Fig. 15D), and the heater 1 was adhered to the heater holder 8 (Fig. 15E).
  • the surfaces of the electrode terminals 4, 5 were Au flash-plated in order to improve wettability with the solder, thereby achieving stable reliability connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the heater thus prepared was capable of efficiently supplying the recording material with heat generated by electric power, and realizing stable heater performance without thermal or electrical deterioration of the components of the heater. Particularly it was free from the generation of abraded powder caused by the friction between the heater and the film, and could maintain stable sliding performance.
  • Fig. 16 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention.
  • the structures of the components are same as those in Fig. 14.
  • a groove for forming the heat-generating resistor was formed mechanically on a ceramic substrate, as in the embodiment 8.
  • the heat-generating resistor 3 was formed by sputtering Au with a thickness of 10 ⁇ m and a W (tungsten) layer 3a with a thickness of 50 nm.
  • the groove for forming the heat-generating resistor was shaped same as in the embodiment 8, and the W layer was formed for preventing mutual diffusion of Au and C.
  • the heat-generating resistor was trimmed to a desired resistance, after the resistance measurement.
  • the electrode terminal 4 was formed by Cu sputtering, and then an a-C:H film 18b, serving as the insulating protective film, was formed.
  • the a-C:H film 18b was formed with the apparatus shown in Fig. 13.
  • the substrate after the electrode formation was placed on the substrate holder, and the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr.
  • CH4 at 12 sccm and H2 at 25 sccm were introduced from the gas introducing system, and the gas pressure was regulated to 2.8 x 10 ⁇ 4 Torr to generate plasma in the plasma chamber.
  • the substrate was irradiated with an ion beam, extracted by a voltage of 0.75 kV applied to the extracting electrode, thereby forming an a-C:H film of a thickness of 400 nm in a predetermined position on the heat-generating resistor.
  • the heater was subsequently completed by connecting the electrode tabs and the wires to the electrode terminals, and adhering the heater to the heater holder.
  • the heater thus prepared indicated stable fixing ability and durability as in the embodiment 6.
  • Fig. 17 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention.
  • the structures of the components are same as those shown in Fig. 14.
  • the heat-generating resistor layer was formed with a thickness of about 10 ⁇ m, in a similar manner as in the embodiment 8.
  • the depth of the groove for forming the heat-generating resistor was made as 12 ⁇ m.
  • low-softening lead silicate glass was coated by screen printing on the groove containing the heat-generating resistor and was burnt in air to form an insulating protective layer 6' of a thickness of about 2 ⁇ m.
  • a DLC film 18a of a thickness of 200 nm was formed on the entire surface of the heater, with same method and conditions as in the embodiment 8.
  • the electrode tabs and the wires were connected to the electrode terminals as in the embodiment 8, and the substrate was adhered to the heater holder, bearing a DLC film of a thickness of 60 nm in the contacting portion with the film as in the embodiment 9, to complete the heater.
  • a hydrogenated amorphous carbon film (a-C:H film) or a DLC film of a high hardness and a low friction coefficient is formed, by gaseous synthesis, on the surface of the film in sliding contact with the heater.
  • An a-C:H film or a DLC film is formed by the above-explained method on a face, coming into contact with the heater, of a heat-resistant film, such as of polyimide, formed as an endless belt or an elongated web.
  • the thickness of the a-C:H film or DLC film is preferably within a range from several nanometers to several hundred nanometers, because a thickness less than several nanometers cannot provide sufficient lubricating performance, while a thickness larger than several hundred nanometers results in peeling off the the film from the plastic film or the curling thereof, due to the stress in the film.
  • the plastic film may also be curled even when the film is formed within the above-mentioned preferred thickness range.
  • the a-C:H film or the DLC film may be formed on both sides of the plastic film.
  • the sliding performance between the heater and the plastic film may be further improved by formation of the a-C:H film or the DLC film also on the insulating protective layer of the heater or on the heater holder, coming into contact with the plastic film.
  • the present invention is to form, as a lubricating protective layer, an a-C:H film or a DLC film by gaseous synthesis on the surface of the plastic film in sliding contact with the heater, thereby improving the abrasion resistance and the sliding performance between the heater and the plastic film, and extending the service life of the heater.
  • Fig. 18 is a magnified partial cross-sectional view of a thermal fixing device, employing the heater embodying the present invention, wherein a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing the film toward the heater 1.
  • the film 10 rotates or moves a predetermined speed in a direction indicated by an arrow in contact with the edges of the heater holder 8 and with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 19A to 19E are schematic cross-sectional views of the heater of the embodiment 11, wherein shown are a heater 1; an insulating substrate 2 for example of ceramics; an Ag/Pd heat-generating resistor 3; a Cu electrode terminal 4; an insulating protective glass layer 6; a heater holder 8; an electrode tab 12; an AuSi solder 13; and a wire 14.
  • Ag/Pd paste was at first applied by screen printing on an Al2O3 substrate and was burnt in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance after the resistance was measured. Then Cu paste was applied by screen printing, and the electrode terminal 4 was formed by burning under a controlled oxygen partial pressure. Subsequently low-softening lead silicate glass was applied by screen printing and burnt in air to form the insulating protective film.
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13. Subsequently the wire 14 was maintained in contact with the electrode tab 12, and the heater was adhered to the heater holder 8.
  • the surface of the electrode terminal 4 was Au flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • Fig. 20 is a schematic view of an ECR plasma CVD apparatus, employed in the formation of the DLC film 118 on the polyimide film 10, wherein shown are a plasma chamber 70 of cavity resonator type; a gas introducing system 71; a microwave introducing window 72; a microwave guide tube 73; a magnet 74; a microwave oscillator 75; a mechanism 76 for feeding and taking up a film under a constant tension and a constant speed; a vacuum chamber 77; a vacuum system 78; and a cover 79 for limiting the film forming area.
  • C6H6 at 40 sccm and H2 at 25 sccm were introduced from the gas introducing system to a pressure of 4.0 x 10 ⁇ 4 Torr, and plasma was generated in the plasma chamber by introducing microwave of 2.45 GHz at 1.0 kW.
  • an external magnetic field was provided by the magnet to realize the ECR conditions of 1200 Gauss at the introducing window, 875 Gauss at the exit of the cavity resonator and 700 Gauss at the position of the substrate.
  • the DLC film 118, shown in Fig. 18, was formed with a thickness of 70 nm, under the application of a voltage of 500 V to the substrate by DC power source (not shown).
  • the hardness of the DLC film was 2500 kg/mm2 in Vickers hardness.
  • the friction properties were evaluated by pin-on-disk method.
  • the friction coefficient was 0.10 in a measurement conducted in air with relative humidity of 50%, utilizing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 2.2N and a sliding velocity of 0.04 m/s.
  • the moving speed of the film was 1 m/min.
  • the film forming speed was 0.5 nm/sec.
  • thermo fixing device was free from generation of the abraded powder resulting from the friction between the heater and the plastic film, and was capable of maintaining stable sliding performance over a prolonged period.
  • FIG. 21 is a schematic view of an ion beam deposition (IBD) apparatus employed in the formation of the a-C:H film, wherein shown are a vacuum chamber 80; ion beam sources 81; ionizing chambers 82; gas introducing systems 83; ion beam extracting electrodes 84; a substrate 85; a mechanism 86 for feeding and taking up a film under a constant tension and a constant speed; a vacuum system 87; and covers 88 for limiting the film forming area. There are provided a pair of the ion sources 81 in mutually opposed positions across the plastic film.
  • IBD ion beam deposition
  • Fig. 22 is a magnified partial cross-sectional view of a thermal fixing device employing the heater embodying the present invention, wherein shown is a DLC film 119. Other components are same as those in Fig. 18.
  • a DLC film was formed with a thickness of 65 nm on a polyimide film, in a similar manner as in the embodiment 11. Also a DLC film of a thickness of 200 nm was formed on the insulating protective layer 6 provided on the heat-generating resistor layer of the heater in the embodiment 11 and on a portion, coming into contact with the plastic film, of the heater holder.
  • a thermal fixing device utilizing thus prepared plastic film and heater, provided stable fixing performance and durability as in the embodiment 11, in the thermal fixation of the recording material in the same manner as in the embodiment 11.
  • the a-C:H film or the DLC film may also be provided only on the heater or the heater holder.
  • a hydrogenated amorphous carbon film a-C:H film
  • a diamond-like carbon (DLC) film of a high electrical insulation, a high thermal conductivity, a high hardness and a low friction coefficient, formed by gaseous synthesis, is utilized as a protective layer of the heater.
  • the a-C:H film or DLC film of the present invention is featured by a thermal conductivity of 200 - 600 W/m ⁇ K, an electrical resistance (volume resistivity) of 108 - 1011 ⁇ cm and a hardness of 2000 - 5000 kg/mm2.
  • the a-C:H film or DLC film to be employed in the present invention may be formed, for example, by microwave plasma CVD, DC plasma CVD, RF plasma CVD, magnetic field microwave plasma CVD, ion beam sputtering, ion beam evaporation, or reactive plasma sputtering.
  • Examples of the carbon-containing raw material gas to be employed in these methods include hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane; alcohols such as methyl alcohol and ethyl alcohol; ketones such as (CH3)2CO and (C6H5)2CO; and gasses such as CO and CO2; and mixtures thereof with other gasses such as N2, H2, O2, H2O and Ar.
  • hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene
  • halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane
  • alcohols such as methyl alcohol and ethyl alcohol
  • ketones such as (CH3)2CO and (C6H5)2CO
  • the a-C:H film or the DLC film contains hydrogen in several ten atom % in the film, and the properties of the film vary significantly with the hydrogen content.
  • an a-C:H film containing hydrogen in 50 atom % or higher is a transparent polymer-like film having a large optical band gap, a high electrical resistance but a low hardness and a high thermal conductivity.
  • an a-C:H film containing hydrogen in 15 - 35 atom % is featured by a high thermal conductivity, a high insulating property and a high hardness, having a Vickers hardness as high as 2000 - 5000 kg/mm2, an electrical resistance exceeding 108 ⁇ cm, a thermal conductivity exceeding 200 W/m ⁇ K and a friction coefficient less than 0.2. These properties are considered attributable to the sp3 bonds, present in a proportion of 40 - 70% in the film. Consequently, for the protective film of the present invention, there should be employed the a-C:H film or DLC film with a hydrogen content of 15 - 35 atom %.
  • the heat-generating resistor is formed by a PVD method such as sputtering, and it is trimmed, if necessary, to a desired resistance after the resistance measurement. Then the electrode terminals are formed similarly by the sputtering of Au, Ag or Cu.
  • the heater substrate is prepared by then forming the protective layer consisting of an a-C:H film or a DLC film.
  • the thickness of the a-C:H film or DLC film should be in a range capable of ensuring a sufficient insulation at the use of the heater and a mechanical strength for protecting the heater from the fixing pressure, and can be within a range from several microns to several hundred microns, preferably from several microns to several ten microns.
  • the formation of the heat-generating resistor and the electrode terminals is not limited to a PVD method such as sputtering, vacuum evaporation or ion plating, but may also be achieved by a CVD method, plating or screen printing.
  • the heater is completed by mounting the electrode tabs for example by soldering, then connecting the wires to the electrode tabs and adhering the heater substrate to the heater holder.
  • the present invention utilizes an a-C:H film or a DLC film, formed by gaseous synthesis, for the protective layer of the heater, thereby improving the thermal efficiency of the heater, reducing the power consumption thereof and realizing a heater excellent in the abrasion resistance and the sliding performance.
  • Fig. 23 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention.
  • a heater 1 is supported by a heater supporting member 9, across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing the film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow in contact with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 24A to 24E are schematic cross-sectional views of the embodiment 14, wherein shown are a heater 1; a ceramic substrate 2; an Ag/Pd heat-generating resistor 3; Cu electrode terminals 4, 5; a protective layer 6 consisting of a DLC film; a heater holder 8; an electrode tab 12; an AuSi solder 13; and a wire 14.
  • Ag/Pd paste was at first applied by screen printing in a predetermined position on an Al2O3 substrate and sintered in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement. Then Cu paste was applied by screen printing, and the electrode terminal 4 was formed by sintering under a controlled oxygen partial pressure (Fig. 24A). Then there was formed a DLC film 6 as the insulating protective film (Fig. 24B). Fig.
  • FIG. 25 is a schematic view of an ECR plasma CVD apparatus employed in the formation of the DLC film, wherein shown are a plasma chamber 90 of cavity resonator type; a gas introducing system 91; a microwave introducing window 92; a microwave guide tube 93; a magnet 94; a microwave oscillator 95; a substrate holder 96 with a substrate; a vacuum chamber 97; and a vacuum system 98.
  • the substrate after the electrode formation was placed on the substrate holder, and the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr.
  • C6H6 at 30 sccm and H2 at 15 sccm were introduced from the gas introducing system to a pressure of 3.4 x 10 ⁇ 4 Torr, and plasma was generated in the plasma chamber by introduction of microwave of 2.45 GHz at 1 kW.
  • an external magnetic field was generated by the magnet to establish ECR conditions of 1500 Gauss at the introducing window, 875 Gauss at the exit of the cavity resonator and 700 Gauss at the position of the substrate.
  • a voltage of -500 V was applied to the substrate by DC power source (not shown), and the DLC film was formed with a thickness of 10 ⁇ m.
  • the thermal conductivity of the DLC film, measured with a photo AC thermal constant measuring apparatus, was 400 W/m ⁇ K. Also the electrical resistance was 2 x 1011 ⁇ cm.
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13 (Fig. 24C). Then the wire 14 was maintained in contact with the electrode tab 12 (Fig. 24D), and the heater substrate was adhered to the heater holder 8 (Fig. 24E).
  • the surface of the electrode terminal 4 was Au-flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the heater thus prepared is capable of efficiently supplying the recording material with the heat generated by electric power, and can realize stable performance without thermal deterioration of the heater components.
  • the heat-generating resistor 3 was formed on a ceramic substrate by successive sputterings of Ti of 20 nm and Au of 10 ⁇ m, and was then trimmed to a desired resistance according to the resistance measurement. Then the electrode terminals 4, 5 were prepared by Cu sputtering. Subsequently an a-C:H film 6 was formed as the insulating protective layer. Fig.
  • FIG. 26 is a schematic view of an ion beam deposition (IBD) apparatus employed in the formation of the a-C:H film, wherein shown are a vacuum chamber 200; an ion beam source 201; an ionizing chamber 202; a gas introducing system 203; an ion beam extracting electrode 204; a substrate 205; a substrate holder 206; and a vacuum system 207.
  • the substrate after the electrode formation was placed on the substrate holder, and the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr.
  • CH4 at 15 sccm and H2 at 30 sccm were introduced from the gas introducing system to a pressure of 3.1 x 10 ⁇ 4 Torr to generate plasma in the plasma chamber.
  • the substrate was irradiated with an ion beam extracted by a voltage of 0.7 kV applied to the extracting electrode, whereby an a-C:H film of a thickness of 15 ⁇ m was formed in a predetermined position on the heat-generating resistor.
  • a similarly prepared film showed, in HFS analysis, a hydrogen content of 25 atom %.
  • the thermal conductivity and the electrical resistance, measured as in the embodiment 14, were respectively 250 W/m ⁇ K and 2 x 1011 ⁇ cm.
  • the heater was subsequently completed by the connection of the electrode tabs and the wires to the electrode terminals and the adhesion to the heater holder as in the embodiment 14.
  • an a-C:H film or a DLC film, containing a metallic element is formed by gaseous synthesis on the insulating protective film or the heat-generating resistor of the heater.
  • the a-C:H film or DLC of the present invention is featured by a thermal conductivity of 200 - 600 W/m ⁇ K, an electrical resistance (volume resistivity) of 108 - 1011 ⁇ cm and a hardness of 2000 - 5000 kg/mm2.
  • the a-C:H film or DLC film to be employed in the present invention may be formed, for example, by microwave plasma CVD, DC plasma CVD, high frequency plasma CVD, magnetic field microwave plasma CVD, ion beam sputtering, ion beam evaporation or reactive plasma sputtering.
  • Examples of the carbon-containing raw material gas to be employed in these methods include hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane; alcohols such as methyl alcohol and ethyl alcohol; ketones such as (CH3)2CO and (C6H5)2CO; and gasses such as CO and CO2; and mixtures thereof with other gasses such as N2, H2, O2, H2O and Ar. Also there may be employed a solid carbon source such as graphite or glass-like carbon of a high purity.
  • hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene
  • halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane
  • alcohols such as methyl alcohol and
  • An element, such as Ta, W, Mo, Nb, Ti, Cr, Fe, B or Si to be added to the a-C:H film or the DLC film can be supplied from a solid metal, a semiconductor, or from organometallic gas, silane gas, higher silane gas, diborane gas or higher borane gas containing such metal.
  • the a-C:H film or the DLC film contains hydrogen in veral ten atom % in the film, and the properties of the film vary significantly with the hydrogen content.
  • an a-C:H film containing hydrogen in 50 atom % or higher is a transparent polymer-like film having a large optical band gap, a high electrical resistance but a low hardness and a high thermal conductivity.
  • an a-C:H film containing hydrogen in 10 - 45 atom % is featured by a high thermal conductivity, a high insulating property and a high hardness, having a Vickers hardness as high as 2000 - 5000 kg/mm2, an electrical resistance exceeding 108 ⁇ cm, a thermal conductivity exceeding 200 W/m ⁇ K and a friction coefficient less than 0.2. These properties are considered attributable to the sp3 bonds, present in a proportion of 40 - 70 % in the film. Consequently, for the protective film of the present invention, there should be employed the a-C:H film or DLC film with a hydrogen content of 10 - 45 atom %.
  • the DLC film in the present invention microscopically has the crystalline structure of diamond, for example a diffraction pattern specified as diamond in the electron beam diffraction analysis.
  • the friction coefficient of the a-C:H film or the DLC film is as low as 0.02 in vacuum or in dry nitrogen atmosphere, but tends to become larger as the relative humidity increases. In the ordinary state the friction coefficient is less than 0.2, but it becomes worse under a higher relative humidity or with an increase in the distance of sliding movement. On the other hand, the friction coefficient of the a-C:H film or the DLC film containing Ta, W, Mo, Nb, Ti, Cr, Fe, B or Si according to the present invention remains constant, regardless of the humidity or the distance of sliding movement.
  • the concentration of such element in the film should not exceed 30 atom %, because a content exceeding 30 atom % not only increases the friction coefficient in comparison with the case without the addition of such element but also deteriorates the film hardness.
  • Particularly preferred is an element concentration of 10 - 20 atom % which minimizes the friction coefficient.
  • Fig. 27B shows the relationship between the element concentration and the friction coefficient. Also the addition of the above-mentioned element can increase the adhesion strength to the substrate.
  • the a-C:H film or the DLC film, containing metal is formed by the aforementioned methods on the insulating protective film or the heat-generating resistor of the heater.
  • the thickness of such a-C:H film or DLC film should be in a range from several nanometers to several ten microns, preferably several ten nanometers to several microns, because a thickness smaller than several nanometers cannot provide sufficient lubricating or insulting ability, while a thickness exceeding several ten microns may result in peeling of the film from the substrate due to the film stress.
  • the element to be added and the amount thereof should be so selected as to ensure sufficient insulation (to obtain a desired electrical resistance).
  • Reactive sputtering is conducted utilizing a target of a metal element to be added (for example Ta), and mixing carbon-containing gas (for example C2H2) and sputtering inert gas (rare gas such as Ar or nitrogen) in a suitable ratio.
  • a target of a metal element to be added for example Ta
  • carbon-containing gas for example C2H2
  • sputtering inert gas rare gas such as Ar or nitrogen
  • DC plasma is generated by introducing a power of several hundred W to several kW from a DC power source and applying a suitable bias voltage to the substrate.
  • the concentration of the added element is controlled by the flow rate ratio of the reaction gas and the sputtering gas. The concentration can be made higher by increasing the flow rate of the sputtering gas.
  • the sliding performance between the heater and the palstic film can be further improved by forming the lubricating protective film of the present invention not only on the insulating protective film or the heat-generating resistor of the heater but also on the plastic film coming into contact with the heater and/or on the heater holder.
  • the present invention is to form an a-C:H film or a DLC film, containing a metal element, by gaseous synthesis as the lubricating protective layer on the insulating protective film or the heat-generating resistor of the heater, which is in sliding contact with the plastic film, thereby improving the abrasion resistance and the sliding performance between the heater and the plastic film and extending the service life of the heater.
  • Fig. 27A is a magnified partial cross-sectional view of a thermal fixing device, employing the heater embodying the present invention, wherein a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing the film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow in contact with the edges of the heater holder 8 and with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined a temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 28A to 28E are schematic cross-sectional views of the embodiment 16, wherein shown are a heater 1; a ceramic substrate 2; an Ag/Pd heat-generating resistor 3; Cu electrode terminals 4, 5; an insulating protective glass layer 6; a DLC film 120 containing metal element; a heater holder 8; an electrode tab 12; AuSi solder 13; and a wire 14.
  • Ag/Pd paste was at first applied by screen printing on an Al2O3 substrate and burnt in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement. Then Cu paste was applied by screen printing, and the electrode terminals 4, 5 were formed by burning under a controlled oxygen partial pressure (Fig. 28A). Then the insulating protective film was prepared by application of low-softening lead silicate glass by screen printing, followed by burning in air. Subsequently a DLC film of a thickness of 400 nm, containing Ta was formed by ECR plasma CVD (Fig. 28C). Fig.
  • FIG. 29 is a schematic view of an ECR plasma CVD apparatus employed in the formation of the DLC film, wherein shown are a plasma chamber 210 of cavity resonator type; a glass introducing system 211; a microwave introducing window 212; a microwave guide tube 213; a magnet 214; a microwave oscillator 215; a substrate 216; a vacuum chamber 217; a vacuum system 218; and a Ta target 219 of a purity of 99.99 %.
  • a similarly prepared film showed, in the HFS (hydrogen forward scattering) analysis, a hydrogen content of 20 atom %. Also the Ta concentration in the film, analyzed by EPMA, was 10 atom %. The hardness of the film, measured by the thin film hardness meter, was 2000 kg/mm2 in Vickers hardness. The friction properties of the film was evaluated by pin-on-disk method. The friction coefficient was 0.06 in a measurement conducted in air of relative humidity of 60 %, utilizing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 2.2N and a sliding velocity of 0.04 m/s.
  • HFS hydrogen forward scattering
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13 (Fig. 28D). Then the wire 14 was maintained in contact with the electrode tab 12 and the heater substrate was adhered to the heater holder 8 (Fig. 28E).
  • the surface of the electrode terminals 4, 5 were Au-flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the thermal fixing device thus prepared was free from generation of abraded power resulting from the friction between the heater and the plastic film, and could maintain stable sliding performance over a long period.
  • Ag/Pd paste was applied in said groove by screen printing with a thickness of 11 ⁇ m and was sintered in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement.
  • the substrate was then placed in sputtering apparatus (not shown) and a W (tungusten) layer 3a of a thickness of 1 ⁇ m on the resistor layer in order to prevent mutual diffusion of Ag/Pd and C. Then, in the ECR plasma CVD apparatus, as shown in Fig.
  • a voltage of -700 V was applied to extracting electrode (not shown) provided at the exit of the cavity resonator, and there was formed an a-C 1-x Si x :H film with a thickness of 400 nm.
  • the range of x was 0 ⁇ x ⁇ 0.4 as an x value exceeding 0.4 increases the SiC component in the film, thus increasing the friction coefficient in excess of 0.2.
  • Fig. 30 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention.
  • the hardness of the film, measured with the thin film hardness meter, was 2500 kg/mm2 in Vickers hardness.
  • the friction properties were evaluated by pin-on-disk method.
  • the friction coefficient was 0.05 in a measurement conducted in air of relative humidity of 50 %, utilizing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 2.2N and a sliding velocity of 0.04 m/s.
  • the hydrogen content in the film measured by HFS (hydrogen forward scattering) analysis, was 25 atom %.
  • FIG. 13 is a schematic view of an ion beam deposition (IBD) apparatus employed in the formation of the a-C:H film, wherein shown are a vacuum chamber 220; an ion beam source 221; an ionizing chamber 222; a gas introducing system 223; an ion beam extracting electrode 224; a substrate 225; an electron gun 226; and a vacuum system 227.
  • IBD ion beam deposition
  • Thermal fixing devices equipped with thus prepared heaters were used in the thermal fixation of the recording material as in the embodiment 16.
  • the samples 1 to 9 indicate stable fixing performance and durability as in the embodiment 16, but the sample 10 indicates some generation of film abraded powder with the increase in the number of fixing operations.
  • the target was composed of Ta of a purity of 99.9 %.
  • C2H2 and Ar were introduced from the gas introducing system, and a Ta-containing a-C:H film was formed with a thickness of 400 nm, with the C2H2/Ar flow rate ratio varied within a range of 0 - 60 %.
  • Thermal fixing devices equipped with thus prepared heaters were used in the thermal fixation of the recording material as in the embodiment 16.
  • Samples 11 to 13 indicate stable fixing performance and durability as in the embodiment 16, but samples 14 and 15 indicate some generation of the abraded powder from the plastic film, with an increase in the number of fixing operations.
  • the forming method and the raw materials for the a-C:H film or DLC film employed in the presnet embodiment are same as those in the foregoing embodiments, but the addition of an element such as Ta or W by an organometallic gas may be dispensed with if necessary.
  • the friction coefficient of the a-C:H film or DLC film is as low as 0.02 in vacuum or in dry nitrogen atmosphere, but tends to increase as the relative humidity becomes higher.
  • the friction coefficient is less than 0.2 in the normal state, but becomes higher as the relative humidity becomes higher or the distance of sliding movement becomes longer.
  • the a-C:H film or DLC film, containing fluorine according to the present invention shows a constant friction coefficient, regardless of the humidity or the length of sliding movement.
  • the concentration of fluorine in the film should not exceed 30 atom %, since a content exceeding 30 atom % deteriorates the properties inherent to the a-C:H or DLC film. There will particularly result a loss in the film hardness, and the adhesion to the substrate will also be deteriorated.
  • the fluorine-containing a-C:H or DLC film is formed by the aforementioned methods, on the insulating protective film or the heat-generating resistor of the heater, or on the plastic film.
  • the thickness of such a-C:H or DLC film should be, in case formation on the insulating protective film or on the heat-generating resistor, within a range from several nanometers to several ten microns, preferably from several ten nanometers to several microns, since a thickness less than several nanometers cannot provide sufficient lubricating or insulating ability, while a thickness larger than several ten microns tends to result in the film peeling from the substrate because of the stress in the film.
  • the sliding performance between the heater and the palstic film may be further improved by forming the lubricating protective film of the present invention not only on the heater or the heater holder coming into contact with the plastic film but also on said plastic film in sliding contact with the heater.
  • the present invention forms, as the lubricating protective layer, an a-C:H film or a DLC film, containing fluorine, by gaseous synthesis on the insulating protective film or the heat-generating resistor, coming into sliding contact with the plastic film, of the heater, thereby improving the abrasion resistance and the sliding performance between the heater and the plastic film and extending the service life of the heater.
  • Fig. 33 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention, wherein a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing said film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow, in contact with the edges of the heater holder 8 and with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and, a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 34A to 34E are schematic cross-sectional views of the heater of the embodiment 20, wherein shown are a heater 1; a ceramic substrate 2; an Ag/Pd heat-generating resistor 3; a Cu electrode terminal 4; an insulating protective glass layer 6; a DLC film 121 containing fluorine; a heater holder 8; an electrode tab 12; an AuSi solder 13; and a wire 14.
  • Ag/Pd paste was at first applied by screen printing on an Al2O3 substrate and burnt in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement.
  • 35 is a schematic view of an ECR plasma CVD apparatus employed in the formation of the DLC film, wherein shown are a plasma chamber 250 of cavity resonator type; a gas introducing system 251; a microwave introducing window 252; a microwave guide tube 253; a magnet 254; a microwave oscillator 255; a substrate 256; a vacuum chamber 257; and a vacuum system 258.
  • a similarly prepared film showed, in HFS (hydrogen forward scattering) analysis, a hydrogen content of 20 atom %. Also the fluorine concentration, measured by RBS (Rutherford backscattering spectroscopy), was 10 atom %.
  • the friction properties were evaluated by pin-on-disk method. The friction coefficient was 0.05 in a measurement conducted in air of relative humidity of 50 %, utilizing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 1.5N and a sliding velocity of 0.04 m/s.
  • the electorde tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13. Then the wire 14 was maintained in contact with the electrode tab 12 and the heater substrate was adhered to the heater holder 8.
  • the surface of the electrode terminals 4, 5 were Au flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni, or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the thermal fixing device thus prepared was free from generation of abraded powder resulting from the friction between the heater and the plastic film, and could maintain stable sliding performance over a prolonged period.
  • Ag/Pd paste was applied in said grove by screen printing with a thickness of 11 ⁇ m and was burnt in air to form a heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement.
  • the substrate was then placed in an unrepresented sputtering apparatus and a W (tungsten) layer 3a of a thickness of 1 ⁇ m on the resistor layer in order to prevent mutual diffusion of Ag/Pd and C. Then, in the ECR plasma CVD apparatus, shown in Fig.
  • a fluorine-containing a-C:H film was formed as in the embodiment 20.
  • C6H5F at 25 sccm and H2 at 15 sccm were introduced from the gas introducing system to a pressure of 3.6 x 104 Torr, and plasma was generated in the plasma chamber by the introduction of microwave of 2.45 GHz at 1.2 kW.
  • an external magnetic field was formed by the magnet to establish the ECR conditions of 1500 Gauss at the introducing window, 875 Gauss at the exit of the cavity resonator and 650 Gauss at the position of the substrate.
  • a voltage of -700 V was applied to an unrepresented extracting electrode (grid) provided at the exit of the cavity resonator, and the a-C:H, F film was formed with a thickness of 1000 nm.
  • a sample 1 of the heater was completed by the connection of the electrode tabs and the wires to the electrode terminals and the adhesion to the heater holder in the same manner as in the embodiment 20.
  • Fig. 36 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention. Samples 2 and 3 were prepared under the same conditions, except that the raw material gas was respectively replaced by C6H3F3 or C6F6.
  • Thermal fixing devices equipped with thus prepared heaters were subjected to the thermal fixation of the recording material as in the embodiment 20.
  • Samples 1 and 2 provided stable fixing performance and durability as in the embodiment 20, but sample 3 developed slight film peeling with the increase in the number of fixing operations.
  • FIG. 37 is a schematic view of an ion beam deposition (IBD) apparatus employed in the formation of the a-C:H film, wherein shown are a vacuum chamber 260; an ion beam source 261; an ionizing chamber 262; a gas introducing system 263; an ion beam extracting electrode 264; a substrate 265; and a vacuum system 266.
  • IBD ion beam deposition
  • CF4 was introduced at 100 sccm from the gas introducing system to a pressure of 3.0 x 10 ⁇ 2 Torr, and RF plasma was generated by introduction of a power of 1.5 kW from the RF power source.
  • the substrate bearing the a-C:H film was exposed to the RF plasma, whereby the surface of the film was fluorinated.
  • the film indicated a hydrogen content of 30 atom %, a fluorine content of 5 atom %, a film hardness of 2500 kg/mm2 and a friction coefficient of 0.05.
  • the fluorine concentration in the film decreased from the surface toward the substrate.
  • the methods and conditions of these measurements were same as in the embodiment 14.
  • the heater was completed by the connection of the electrode tabs and the wires to the electrode terminals and by the adhesion to the heater holder, in the same manner as in the embodiment 20.
  • a thermal fixing device equipped with thus prepared heater was used in the thermal fixation of the recording material in the same manner as in the embodiment 20, there were obtained stable fixing performance and durability as in the embodiment 20.
  • a-C:H films were formed with a thickness of 450 nm on the insulating protective film, with a thickness of 550 nm on the heater holder coming into contact with the plastic film, and with a thickness of 30 nm on the plastic film. Then the heater, heater holder and plastic film, bearing the a-C:H film thereon, were placed in the RF plasma CVD apparatus shown in Fig. 38 in the same manner as in the embodiment 22, and the surface of the a-C:H films was fluorinated.
  • Fig. 39 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention.
  • a thermal fixing device equipped with thus prepared heater was used in the thermal fixation of the recording material as in the embodiment 20, and there were obtained stable fixing performance and durability as in the embodiment 20.
  • the diamond crystals of the present invention is featured by a thermal conductivity of 600 - 2100 W/m ⁇ K, an electrical resistance (volume resistivity) of 1010 - 1016 ⁇ cm, and a hardness of 10000 kgf/mm2.
  • the substrate for forming the diamond film of the present invention is preferably composed of a material suitable for the formation of diamond crystals and enabling mechanical grinding and etching.
  • a material suitable for the formation of diamond crystals and enabling mechanical grinding and etching examples include Si, Ta, Mo, W, SiC, WC, SiO2, Al2O3 and Si3N4.
  • the gaseous synthesis of diamond crystals to be employed in the present invention can be achieved, for example, by heated filament CVD, microwave plasma CVD, DC plasma CVD, RF plasma CVD, magnetic field microwave plasma CVD or combustion flame method.
  • the carbon-containing raw material gas include hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetylene; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane; alcohols such as methyl alcohol and ethyl alcohol; ketones such as (CH3)2CO and (C6H5)2CO; gasses such as CO and CO2; and mixtures thereof with other gas such as N2, H2, O2, H2O or Ar.
  • Synthesis of diamond crystals is conducted, for example in case of microwave plasma CVD utilizing hydrogen and methane as the raw material gas, with a methane gas concentration of 0.1 - 1.0 %; a substrate temperature of 600 - 900°C; a gas pressure of 1.33 - 26.6 kPa and a total gas flow rate of 100 - 1000 ml/min.
  • the forming conditions of the diamond crystals are variable according to the synthesizing method.
  • the diamond crystals mentioned in this invention are those identifiable as the diamond crystals for example by X-ray diffraction, electron beam diffraction or Raman spectroscopy.
  • the Raman spectroscopy shows, as shown in Fig. 40, a sharp peak of diamond at about 1333 cm ⁇ 1, and weak broad peaks, resulting from non-diamond carbon component, at about 1360 and 1550 cm ⁇ 1.
  • the thermal conductivity of diamond crystals depends greatly on the crystallinity of diamond, and becomes higher as the crystallinity becomes higher and the impurity becomes less. Consequently there are preferred diamond crystal not showing the broad peaks around 1360 and 1550 cm ⁇ 1 in Raman spectrum.
  • the proportion of diamonds and amorphous carbon by the intensity ratio (I1550/I1333) of the peak of the amorphous carbon (broad peak around 1550 cm ⁇ 1) and the peak of diamonds (1333 cm ⁇ 1) in the Raman spectrum, there is preferred a range 0 ⁇ I1550/I1333 ⁇ 1. Above the upper limit of this range, the crystallinity of diamonds becomes deteriorated, and the thermal conductivity becomes worse. Also the crystallinity of diamonds is significantly correlated with the species and concentration of the raw material gasses employed in the film formation. For example, in the methane-hydrogen system, a lowered methane concentration improves the crystallinity, with an increase in the thermal conductivity.
  • the thickness of the diamond layer should be so selected as to ensure a mechanical strength capable of protecting the heater from the fixing pressure and a sufficient insulation at the use of heater, and is generally within a range from several to several thousand microns, preferably from several ten to several hundred microns.
  • the heat-generating resistor is formed by a PVD method such as sputtering, and is trimmed, if necessary, to a desired resistance based on the resistance measurement.
  • the electrode terminals are similarly formed by sputtering of Au, Ag or Cu.
  • ceramic paste adheresive
  • the heat-generating resistor and the electrode terminals may be formed not only by a PVD method such as sputtering, vacuum evaporation or ion plating but also by CVD, plating or screen printing.
  • the substrate for diamond film formation is removed by mechanical grinding or chemical etching.
  • the surface of the diamond film reflecting the polycrystalline nature, has a larger surface roughness as the crystallinity increases, and is generally in a range from several thousand Angstroms to several microns in Rmax.
  • the surface roughness of the diamond film after the substrate removal is equal to that of the substrate used for diamond film formation, so that the surface roughness of an overcoat layer can be made equal to or less than several hundres Angstroms in Rmax.
  • the heater of the present invention is completed by mounting the electrode tabs to the electrode terminals for example by soldering, then pressing the wires to the electrode tabs and adhering the heater substrate to the heater holder.
  • the present invention utilizes a diamond film obtained by gaseous synthesis as the protective layer of the heater, thereby improving the thermal efficiency of the heater, reducing the power consumption thereof and realizing a heater excellent in the abrasion resistance and sliding performance.
  • Fig. 41 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention, wherein a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing said film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow in contact with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 42A to 42F are schematic cross-sectional views of the 24th embodiment, wherein shown are a heater 1; a ceramic substrate 2; a Ag/Pd heat-generating resistor 3; a Cu electrode terminal 4; a substrate 5 for example of Si for diamond film formation; a protective layer 6 consisting of a polycrystalline diamond film; a heater holder 8; an electrode tab 12; AuSi solder 13; and a wire 14.
  • a polycrystalline diamond film 6 was at first formed on the Si substrate 5 for diamond film formation (Fig. 42A). On the Si substrate, areas not subjected to the diamond film formation were masked in advance with a resist material. This substrate was immersed in alcoholic dispersion of diamond grinding particles of 15 - 30 ⁇ m and subjected to scarring treatment with an ultrasonic oscillator, and the masking resist was then removed. This substrate was then subjected to the formation of the diamond film in a heated filament CVD apparatus shown in Fig.
  • a quartz reaction tube 270 an electric over 271; a tantalum filament 272; a substrate 273; a raw material gas inlet 274 connected to unrepresented gas containers, gas flow regulators and valves; and gas outlet 275 connected to a mechanical booster pump, a rotary pump and valve which are not illustrated.
  • vacuum pump methane at 1 ml/min. and hydrogen at 999 ml/min. were introduced from gas containers (not shown) into the quartz reaction tube, and the pressure therein was regulated at 6.00 Pa by regulator valve (not shown).
  • the interior of the reaction tube was heated to 900°C by the electric oven, and the filament was heated to 2100°C, and the diamond film was formed in 20 hours, with a thickness of 40 ⁇ m.
  • the obtained diamond film was a polycrystalline film with clear facets.
  • the Raman spectroscopy showed a sharp peak of diamond around 1333 cm ⁇ 1, and the intensity ratio of the amorphous carbon peak to the diamond peak was I1550/I1333 ⁇ 0.1.
  • a diamond film prepared under the same conditions showed a thermal conductivity, measured by the radiation cooling method, of 900 W/m ⁇ K.
  • the heat-generating resistor 3 was formed by sputtering Ti for a thickness of 200 ⁇ and Au for a thickness of 10 ⁇ m in succession, and trimmed to a desired resistance based on the resistance measurement.
  • the electrode terminal 4 was formed by Cu sputtering (Fig. 42A).
  • alumina paste adheresive
  • alumina substrate 2 was applied and integrated by burning (Fig. 42B).
  • Si etchant for example HF/HNO3/CH3COOH
  • the electrode terminal 4 In the heater substrate or insulating substrate in which the Si substrate is removed, the electrode terminal 4, the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered and alloyed with the solder 13 of AuSi by heating above the melting point (370°C) of the solder (Fig. 42D). Then the wire 14 was pressed to thus mounted electrode tab 12 (Fig. 42E), and the heater 1 was adhered to the heater holder 8 (Fig. 42F). At the preparation of the heater 1, the surface of the electrode terminal 4 was Au-flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminal with Au, Ni or Au/Ni in order to prevent surface oxidation of the Cu electrode terminal until the soldering operation and to provide the terminal with chemical resistance at the removal of the Si substrate.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • the heater thus prepared was capable of efficiently supplyig the recording material with the heat generated by electric power supply, and could realize stable heater performance without thermal deterioration of the heater components.
  • FIG. 44 is a schematic view of a microwave plasma CVD apparatus employed in the formation of the diamond film, wherein shown are a quartz reaction tube 286; an Si substrate 287; a raw material gas introducing system 288; a microwave source 289; a microwave guide tube 280; and a vacuum system 281.
  • the interior was evacuated by the vacuum system 281, and carbon monoxide at a rate of 25 ml/min. and hydrogen at a rate of 375 ml/min. were introduced from the gas introducing system to the quartz reaction tube.
  • the pressure in the reaction tube was regulated to 5.3 kPa with the regulating valve, and the diamond film was synthesized in 10 hours with a thickness of 150 ⁇ m, with a microwave output of 4 kW supplied from the microwave source 289 and a substrate temperature of 900°C.
  • a similarly synthesized diamond film was a polycrystalline film with clear facets in the SEM observation, and showed a thermal conductivity of 1500 W/m ⁇ K in the radiation cooling method.
  • the heat-generating resistor 3 was formed in a predetermined position by applying Ag/Pd paste with screen printing, and was then trimmed to a desired resistance, if necessary, based on the resistance measurement. Then the electrode terminal 4 was prepared by applying Cu paste by screen printing. Subsequently alumina paste (adhesive) was applied, then an alumina ceramic substrate 2 was applied and adhered by sintering. Then the heater substrate was prepared by removing the Si substrate in the same manner as in the embodiment 24. The heater was completed by connection of the electrode tabs and wires to the electrode terminals and by adhesion to the heater holder. Thus obtained heater, in the thermal fixation of the recording material as in the embodiment 24, could achieve stable fixing operation as in the embodiment 24.
  • the present invention is to resolve also the above-mentioned drawback, by regenerating the lubricating protective carbon film, locally peeled or damaged, on the heater or on the plastic film, thereby providing a thermal fixing device of a high durability (long service life) and a low cost.
  • the above-mentioned drawback can be resolved, according to the present invention, by removing the carbon film of a high hardness and a low friction coefficient, formed as a lubricating protective film on the insulating protective film or the heat-generating resistor of the heater, or on the plastic film, by means of ashing (oxidation treatment) and forming a carbon film again.
  • the carbon film of the present invention is a hydrogenated amorphous carbon film (a-C:H film), a diamond-like carbon film (DLC film) or a hard carbon film.
  • a-C:H film hydrogenated amorphous carbon film
  • DLC film diamond-like carbon film
  • the a-C:H film and the DLC film are featured by certain physical properties represented for example by a thermal conductivity of 200 - 600 W/m ⁇ K, an electrical resistance (volume resistivity) of 108 - 1011 ⁇ cm, a hardness of 2000 - 5000 kg/mm2 and a friction coefficient smaller than 0.2.
  • the hard carbon film is featured by certain physical properties represented for example by a hardness of 2000 - 5000 kg/mm2, a friction coefficient ⁇ ⁇ 0.2, and an electrical resistance (volume resistivity of
  • the oxidation can be achieved, for example, by microwave plasma CVD, DC plasma CVD, RF plasma CVD, magnetic field microwave plasma CVD, ion beam sputtering, ion beam evaporation or ion plating, which is used in the preparation of the above-mentioned a-C:H film, DLC film or hard carbon film.
  • oxygen is employed as the reaction gas to generate oxygen plasma or an oxygen ion beam to which the carbon film is exposed, whereby the carbon film is ashed (eoxidized and removed).
  • the reaction gas can be a mixture of oxygen with H2, N2, air, Ar or CF4.
  • the substrate may be etched with plasma or an ion beam of H2, N2, air or CF4.
  • the state of ashing can be known by monitoring the plasma in the ashing operation, by spectroscopic method, and the end point of the ashing operation can thus be determined.
  • the lubricating protective film of the heater or the plastic film is regenerated by again forming the carbon film by the film forming method explained above.
  • the ashing and the regeneration may be conducted in continuation in a same apparatus, or there may be added a washing step with organic solvent after the ashing.
  • Fig. 45 is a magnified partial cross-sectional view of a thermal fixing device, utilizing the heater embodying the present invention, wherein a heater 1 is supported by a heater supporting member 9 across a heat-insulating heater holder 8.
  • a heat-resistant film 10 is composed for example of polyimide of a thickness of about 40 ⁇ m, formed as an endless belt or an elongated web.
  • a rotary pressure roller 11 serves as the pressing member for pressing said film toward the heater 1.
  • the film 10 rotates or moves at a predetermined speed in a direction indicated by an arrow in contact with the edges of the heater holder 8 and with the face of the heater 1, thus sliding thereon by driving member (not shown) or by the rotating force of the pressure roller 11.
  • the heat-generating resistor 3 is electrically powered to heat the heater to a predetermined temperature, and a recording material 16 bearing an unfixed toner image thereon at the side of the film 10 is inserted into a fixing nip portion 15 which is in the condition that the film 10 is being moved.
  • the recording material 16 is maintained in contact with the film 10 and passes the fixing nip portion together with the film 10.
  • thermal energy is given from the heater 1 to the recording material 16 across the film 10 to fix by fusion the unfixed toner image 17 on the recording material 16.
  • Figs. 46A to 46E are schematic cross-sectional views of the heater of the embodiment 26, wherein shown are a heater 1; a ceramic substrate 2; an Ag/Pd heat-generating resistor 3; Cu electrode terminals 4, 5; an insulating protective glass layer 6; a DLC film 122 containing a metal element; a heater holder 8; an electrode tab 12; AuSi solder 13; and a wire 14.
  • Ag/Pd paste was at first applied by screen printing on an Al2O3 substrate and burnt in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement. Then Cu paste was applied by screen printing, and the electrode terminals 4, 5 were formed by burning under a controlled oxygen partial pressure (Fig. 46A). Then the insulating protective film was prepared by application of low-softening lead silicate glass by screen printing, followed by burning in air (Fig. 46B). Subsequently a DLC film 122 was formed with a thickness of 400 nm, by ECR plasma CVD (Fig. 46C). Fig.
  • FIG. 47 is a schematic view of an ECR plasma CVD apparatus employed in the preparation of the DLC film, wherein shown are a plasma chamber 290 of cavity resonator type; a gas introducing system 291; a microwave intorducing window 292; a microwave guide tube 293; a magnet 294; a microwave oscillator 295; a substrate 296; a vacuum chamber 297; and a vacuum system 298.
  • a plasma chamber 290 of cavity resonator type a gas introducing system 291
  • a microwave intorducing window 292 e.g., a microwave guide tube 293
  • magnet 294 e.g., a microwave oscillator 295
  • substrate 296 e.g., a substrate 296
  • a vacuum chamber 297 e.g., a vacuum system 298.
  • the hydrogen content, Si content, fluorine content, film hardness and friction coefficient of these DLC films were evaluated respectively by HFS (hydrogen forward scattering spectrometry), EPMA, RBS (Rutherford backscattering spectrometry), thin film hardness meter, and pin-on disk method.
  • the friction coefficient was measured in air of relative humidity of 45 %, employing a ball (5 mm in diameter) of bearing steel (SUJ2) as the pin, with a load of 1.2N and a sliding velocity of 0.04 m/s. The obtained results are summarized in Table 5.
  • the electrode tab 12 of a copper alloy and the ceramic substrate 2 were soldered with AuSi solder 13 (Fig. 46C). Then the wire 14 was maintained in contact with the electrode tab 12 and the heater substrate was adhered to the heater hodler 8 (Figs. 46D and 46E).
  • the surfaces of the electrode terminals 4, 5 were Au-flash-plated in order to improve wettability with the solder, thereby achieving stable reliability for connection.
  • the electrode tab may also be formed, instead of copper alloy, of covar, 42 alloy or phosphor-bronze.
  • the solder preferably has a melting point of at least 250°C, and can also be composed of AuGe or AuSn instead of AuSi. Furthermore, soldering could be achieved in more stable manner by flash-plating the Cu electrode terminals with Au, Ni or Au/Ni in order to prevent oxidation and contamination until the soldering operation.
  • the Ni layer is to prevent excessive diffusion of Cu into the solder.
  • a thermal fixing device equipped with thus prepared heater was used in continuous fixation of 300,000 unfixed images, and local peeling could be observed in any of the above-mentioned heaters.
  • the regeneration of the heater was conducted in the following manner.
  • the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr, and O2 was introduced at a rate of 100 sccm from the gas introducing system to a pressure of 3 x 10 ⁇ 3 Torr.
  • oxygen plasma was generated in the plasma chamber by the introduction of microwave of 2.45 GHz at 1.0 kW.
  • an external magnetic field was formed with the magnet to establish the ECR conditions of 1500 Gauss at the introducing window, 875 Gauss at the exit of the cavity resonator, and 650 Gauss at the position of the substrate.
  • the ashing of the carbon film on the insulating protective layer was conducted under these conditions.
  • the end point of the ashing was determined by monitoring, by plasma emission spectroscopy, the variation in time of the intensity of the ultraviolet light at 297.7 nm, emitted from electronically excited CO in plasma.
  • the electrodes were masked in order to prevent oxidation.
  • the heater was taken out and subjected to the DLC film formation with the same method and conditions as explained above.
  • the hydrogen content, Si content, fluorine content, film hardness and friction coefficient in the regenerated DLC film were same as those in the film before regeneration.
  • the thermal fixing device, equipped with thus regenerated heater, showed stable fixing performance and durability same as those before regeneration. Similar investigations on the DLC film containing Ta, W, Mo, Nb, Ti, Cr, Fe or B provided similar results as in the case of the DLC film containing Si.
  • Ag/Pd paste was applied in the groove by screen printing with a thickness of 11 ⁇ m and was burnt in air to form the heat-generating resistor 3, which was then trimmed to a desired resistance based on the resistance measurement.
  • the substrate was then placed in an unrepresented sputtering apparatus and W (tungsten) layer 3a of a thickness of 1 ⁇ m on the resistor layer, in order to prevent mutual diffusion of Ag/Pd and C. Then, in an ion beam deposition (IBD) apparatus shown in Fig.
  • IBD ion beam deposition
  • FIG. 48 an a-C:H film was formed with a thickness of 500 nm.
  • Fig. 48 there are shown a vacuum chamber 300; an ion beam source 301; an ionizing chamber 302; a gas introducing system 303; an ion beam extracting electrode 304; a substrate 305; and a vacuum system 306.
  • CH4 at 15 sccm and H2 at 30 sccm were introduced from the gas introducing system to a pressure of 3.0 x 10 ⁇ 4 Torr to generate plasma in the plasma chamber.
  • An a-C:H film was formed by the irradiation of the substrate with an ion beam, extracted under the application of 0.8 kV to the extracting electrode.
  • the hydrogen content in the a-C:H film measured by HFS analysis, was 30 atom %.
  • a thermal fixing device equipped with thus obtained heater developed local peeling off in the thermal fixation of the recording material in the same manner as in the embodiment 26, and the heater was regenerated in the following manner.
  • the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr, and O2 at 30 sccm was introduced from the gas introducing system to a pressure of 3 x 10 ⁇ 4 Torr, thereby generating oxygen plasma in the plasma chamber.
  • the carbon film on the heater was ashed by irradiation with an oxygen ion beam, extracted by the application of a voltage of 0.5 kV to the extracting electrode.
  • An a-C:H film containing Si was formed with a thickness of 25 nm on a polyimide film, employing an ECR plasma CVD apparatus shown in Fig. 47, additionally provided with an extracting electrode (grid) at the exit of the cavity resonator.
  • the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr, C6H6 at 30 sccm, H2 at 15 sccm and SiH4 at 10 sccm were introduced from the gas introducing system to a pressure of 4.1 x 10 ⁇ 4 Torr, and plasma was generated in the plasma chamber by the introduction of microwave of 2.45 GHz at 1.5 kW.
  • the thermal fixing device equipped with thus obtained film developed local peeling, and the film was therefore regenerated in the folowing manner.
  • the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr, and O2 was introduced at 10 sccm from the gas introducing system to a pressure of 3.0 x 10 ⁇ 3 Torr to generate oxygen plasma in the plasma chamber, and the ashing was conducted by irradiation of the film with oxygen plasma without voltage application to the extracting electrode.
  • CF4 was introduced at 30 sccm from the gas introducing system to a pressure of 3 x 10 ⁇ 4 Torr, and the film was etched by 5 nm by the CF4 plasma irradiation.
  • the a-C 1-x Si x :H film was formed again with the method and conditions same as those explained before.
  • the regenerated film was same in quality as the film before regeneration.
  • the thermal fixing device equipped with thus regenerated film showed stable fixing performance and durability, in thermal fixation of the recording material, same as those prior to the regeneration.
  • FIG. 49 is a schematic view of a DC magnetron sputtering apparatus employed in the formation of the hard carbon film, wherein shown are a vacuum chamber 310; a substrate 311; a graphite target 312 of a purity of 99.99 %; a gas introducing system 313; a DC power source 314; and a vacuum system 315. After the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr, Ar was introduced from the gas introducing system to a pressure of 0.9 Pa.
  • the obtained film showed a film hardness of 2100 kg/mm2, a friction coefficient of 0.12 and a density of 2.8 g/cm3.
  • the thermal fixing device equipped with thus obtained heater develop local peeling, and the heater was therefore regenerated in the following manner.
  • the heater was placed in an RF plasma CVD apparatus shown in Fig. 50, wherein shown are a vacuum chamber 320; a gas introducing system 321; an electrode 322; a substrate 323; a vacuum system 324; and an RF power source 325.
  • the vacuum chamber was evacuated to 1 x 10 ⁇ 7 Torr
  • O2 at 80 sccm and CF4 at 20 sccm were introduced from the gas introducing system to a pressure of 3.0 x 10 ⁇ 2 Torr, and RF plasma was generated by the introduction of an electric power of 1 kW from the RF power source.
  • the ashing was conducted by exposing the heater, bearing the hard carbon film, to said RF plasma. Subsequently the hard carbon film was formed again with the same method and conditions as those explained before. The regenerated film was same in quality as that prior to regeneration.
  • the thermal fixing device equipped with thus regenerated heater indicates stable fixing performance and durability same as those prior to regeneration in the thermal fixation of the recording material.
  • An image heating device having a heater and a plastic film contacting the heater on a face and contacting the unfixed toner image on the recording sheet on the other face, thus transmitting heat from the heater to the toner image through the plastic film, is provided with a hard carbon film, a hydrogenated amorphous carbon film or a diamond-like carbon film at the interface between the heater and the plastic film in order to improve the sliding performance and durability.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Resistance Heating (AREA)
  • Fixing For Electrophotography (AREA)
EP19940108189 1993-05-28 1994-05-27 Heizelement und dieses Element verwendende Bildheizvorrichtung Expired - Lifetime EP0632344B1 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP12710293A JPH06338380A (ja) 1993-05-28 1993-05-28 ヒーター及びその製造方法
JP127102/93 1993-05-28
JP133536/93 1993-06-03
JP13353693A JPH06348153A (ja) 1993-06-03 1993-06-03 加熱定着装置及びその製造方法
JP13617193A JPH06348154A (ja) 1993-06-07 1993-06-07 ヒーター、ヒーターを有する加熱定着装置及びその製造方法
JP136171/93 1993-06-07
JP19217793A JPH0744037A (ja) 1993-08-03 1993-08-03 加熱定着装置の再生方法
JP192177/93 1993-08-03
JP5270891A JPH07130456A (ja) 1993-10-28 1993-10-28 ヒーター及びその製造方法
JP270891/93 1993-10-28

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EP0632344A3 EP0632344A3 (de) 1996-01-17
EP0632344B1 EP0632344B1 (de) 1998-07-29

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997009593A1 (en) * 1995-09-08 1997-03-13 Patinor A/S Infrared emitter and methods for fabricating the same
EP0658827A3 (de) * 1993-12-16 1997-05-28 Olivetti Canon Ind Spa Verfahren zur Lebensdauererhöhung eines Heizteiles eines Fixiergerätes, und entsprechendes Fixiergerät.
EP0838734A3 (de) * 1996-10-28 1999-01-27 Sumitomo Electric Industries, Ltd. Anordnung mit Wärmefixierung
US6078027A (en) * 1997-09-17 2000-06-20 Sumitomo Electric Industries, Ltd. Ceramic fixing heater containing silicon nitride
GB2352247A (en) * 1999-05-10 2001-01-24 Univ Nanyang Heat transfer surface
US7165830B2 (en) 2004-05-14 2007-01-23 Lexmark International, Inc. Resistor protective layer for micro-fluid ejection devices
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US7917073B2 (en) 2007-09-20 2011-03-29 Fuji Xerox Co., Ltd. Sliding member and fixing device, and image forming apparatus using the same
US8055173B2 (en) 2008-04-17 2011-11-08 Fuji Xerox Co., Ltd. Fixing apparatus and image forming apparatus
US8123967B2 (en) 2005-08-01 2012-02-28 Vapor Technologies Inc. Method of producing an article having patterned decorative coating
US8145112B2 (en) 2008-05-23 2012-03-27 Fuji Xerox Co., Ltd. Heating rotating body, heating device, fixing device and image forming device
US9257730B2 (en) 2011-03-11 2016-02-09 Nissan Motor Co., Ltd. Heater module
US11209760B1 (en) 2020-06-09 2021-12-28 Canon Kabushiki Kaisha Thermal fixing apparatus and image forming apparatus

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US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
JP5790041B2 (ja) * 2011-03-11 2015-10-07 日産自動車株式会社 薄型ヒーターモジュール
CN115418604A (zh) * 2022-09-30 2022-12-02 科廷表面科技(浙江)有限公司 一种单晶硅冷却桶的加工工艺

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EP0372479A1 (de) * 1988-12-06 1990-06-13 Canon Kabushiki Kaisha Bildfixiergerät
EP0493902A2 (de) * 1990-12-27 1992-07-08 International Business Machines Corporation Magnetkopfgleitstück und sein Herstellungsverfahren
US5162634A (en) * 1988-11-15 1992-11-10 Canon Kabushiki Kaisha Image fixing apparatus

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CN88211152U (zh) * 1988-03-18 1988-11-30 南京工学院 低碳污染soi石墨加热元件

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US5162634A (en) * 1988-11-15 1992-11-10 Canon Kabushiki Kaisha Image fixing apparatus
EP0372479A1 (de) * 1988-12-06 1990-06-13 Canon Kabushiki Kaisha Bildfixiergerät
EP0493902A2 (de) * 1990-12-27 1992-07-08 International Business Machines Corporation Magnetkopfgleitstück und sein Herstellungsverfahren

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658827A3 (de) * 1993-12-16 1997-05-28 Olivetti Canon Ind Spa Verfahren zur Lebensdauererhöhung eines Heizteiles eines Fixiergerätes, und entsprechendes Fixiergerät.
WO1997009593A1 (en) * 1995-09-08 1997-03-13 Patinor A/S Infrared emitter and methods for fabricating the same
EP0838734A3 (de) * 1996-10-28 1999-01-27 Sumitomo Electric Industries, Ltd. Anordnung mit Wärmefixierung
US6049064A (en) * 1996-10-28 2000-04-11 Sumitomo Electric Industries, Ltd. Heat fixing device for fixing a toner image
US6078027A (en) * 1997-09-17 2000-06-20 Sumitomo Electric Industries, Ltd. Ceramic fixing heater containing silicon nitride
GB2352247A (en) * 1999-05-10 2001-01-24 Univ Nanyang Heat transfer surface
EP1052307A3 (de) * 1999-05-10 2001-06-27 Nanyang Technological University Wärmeübertragungsfläche
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US7165830B2 (en) 2004-05-14 2007-01-23 Lexmark International, Inc. Resistor protective layer for micro-fluid ejection devices
US8123967B2 (en) 2005-08-01 2012-02-28 Vapor Technologies Inc. Method of producing an article having patterned decorative coating
US7917073B2 (en) 2007-09-20 2011-03-29 Fuji Xerox Co., Ltd. Sliding member and fixing device, and image forming apparatus using the same
US8055173B2 (en) 2008-04-17 2011-11-08 Fuji Xerox Co., Ltd. Fixing apparatus and image forming apparatus
US8145112B2 (en) 2008-05-23 2012-03-27 Fuji Xerox Co., Ltd. Heating rotating body, heating device, fixing device and image forming device
US9257730B2 (en) 2011-03-11 2016-02-09 Nissan Motor Co., Ltd. Heater module
US11209760B1 (en) 2020-06-09 2021-12-28 Canon Kabushiki Kaisha Thermal fixing apparatus and image forming apparatus

Also Published As

Publication number Publication date
CN1100252A (zh) 1995-03-15
DE69412007T2 (de) 1999-02-11
EP0632344A3 (de) 1996-01-17
DE69412007D1 (de) 1998-09-03
CN1112612C (zh) 2003-06-25
EP0632344B1 (de) 1998-07-29

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