EP0616356B1 - Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif - Google Patents
Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif Download PDFInfo
- Publication number
- EP0616356B1 EP0616356B1 EP19940400562 EP94400562A EP0616356B1 EP 0616356 B1 EP0616356 B1 EP 0616356B1 EP 19940400562 EP19940400562 EP 19940400562 EP 94400562 A EP94400562 A EP 94400562A EP 0616356 B1 EP0616356 B1 EP 0616356B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- grids
- insulating layer
- thin
- microtips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/863—Spacing members characterised by the form or structure
Definitions
- the present invention relates to a microtip display device ("microtip display device ”) and a method of making the same device.
- a microtip display device includes an electron source with emissive cathodes at microtips and a cathodoluminescent anode having a layer of cathodoluminescent material and placed opposite the cathode electron source emissive microtips which is more simply called "cathode”.
- detachment of powder, local degassing, an electrically charged spacer can trigger an arcing regime between the anode and the cathode, which causes the destruction of the display device on a more or less area extent.
- This arc regime phenomenon is all the more more likely to occur than anode voltage that is applied is strong and that the distance between the anode and the cathode is weak.
- microtip sources include parallel cathode conductors and grids which are parallel and make an angle with the cathode conductors.
- These grids are generally metallic and, in the event of a short circuit or arcing between the cathodoluminescent anode and the microtip source of a device, nothing limits the electric current between the anode and the grids and the risk device then to be destroyed.
- the object of the present invention is to remedy this drawback.
- the means avoiding the disturbance of the electric field include another thin layer which covers said insulating thin layer and which is sufficiently conductive to allow the flow of parasitic electrical charges likely to be created during operation of the device and which also has facing holes microtips.
- This other thin layer which has a sufficient electrical conductivity to allow the flow of charges can be conductive, but preferably it is resistive to allow only this flow.
- the total thickness of the layer (s) thin formed on the grids can be understood by example between a few tens of nanometers and a few hundred nanometers.
- the diameter of the holes formed in said thin insulating layer is greater than the diameter of the holes formed in the grids to avoid disturbance of the electric field created between the microtips and the grids, this layer thin insulator thus being over-etched.
- said insulating thin layer can be over-engraved and / or covered with the layer conductive enough to allow the flow of parasitic electrical charges.
- the device which is the subject of the invention may comprise, on the grids, a thin insulating layer, for example made of silica or silicon nitride, and a resistive layer, for example made of resistive silicon or of SnO 2 .
- this device comprises furthermore a resistive layer which is interposed between each cathode conductor and microtips corresponding, the latter thus resting on this resistive layer.
- Such a resistive layer is of the kind those described in documents (2) and (3) mentioned above.
- the present invention also has for object a device manufacturing process microtip display which is also the subject of the invention, method according to which said form is formed cathodoluminescent anode on the first substrate, and the conductors are formed on the second substrate cathodic, said electrically insulating layer, a grid layer intended for forming the grids, the holes then the microtips, this process being characterized in that said layer is further formed thin electrically insulating on the grid layer and in that said electrically thin layer insulation is associated with means capable of avoiding disturbance, by this thin layer electrically insulating, of the electric field created between microtips and grids.
- the grid layer is etched to form the grids, advantageously before the holes and the thin layer.
- said thin layer electrically insulating is formed before the holes.
- This other thin layer which is conductive enough to allow the flow of parasitic electrical charges, can be formed before or advantageously after the stage of formation of holes.
- a protective layer can be formed on said thin electrically insulating layer either directly either over said other thin layer conductive enough to allow flow charges when it exists.
- This protective layer can be deposited before or advantageously after the formation of holes.
- This protective layer can be removed by etching after the step of forming microtips.
- this protective layer is not eliminated or is only partially eliminated after the microtip formation step.
- the layer (s) formed over the grids, which are resistive or conductive, can be deposited after the holes have been made.
- This known device comprises an anode cathodoluminescent formed on a glass substrate 2 and comprising a conductive and transparent layer 4, for example in ITO and, on this layer 4, a layer 6 luminescent powder.
- the device of Figure 1 also includes a microtip electron source formed on a other insulating substrate 8 comprising conductors cathodics such as conductor 10, a layer insulator 12 formed on these cathode conductors and grids such as grid 14, formed on the insulating layer 12 and perpendicular to the conductors cathodic 10.
- a microtip electron source formed on a other insulating substrate 8 comprising conductors cathodics such as conductor 10, a layer insulator 12 formed on these cathode conductors and grids such as grid 14, formed on the insulating layer 12 and perpendicular to the conductors cathodic 10.
- Microtips such as the microtip 16 are formed on these, in holes 17 made in the grids and the insulating layer 12.
- spacers such as the spacer 18 are arranged between the cathodoluminescent anode and the grids to maintain the rigidity of the device when there is a vacuum between the anode cathodoluminescent and the electron source to microtips.
- Such a device is extremely sensitive short circuit, very unstable and difficult to control.
- the device according to the invention differs from the device of Figure 1 by the additionally includes a layer 20 electrically insulating, formed on the grids and pierced opposite the microtips, this layer 20 being provided to limit the current between the anode and grates.
- the device of Figure 2 also includes a layer 21 which covers layer 20 and which is conductive enough to allow the flow of parasitic electrical charges likely to be created during the operation of the device and which also has holes opposite the microtips.
- This layer 21 avoids disturbance, by layer 20, of the electric field created between the microtips and grids when the device works.
- the layer 21 does not exist and, to avoid disruption of the electric field, the diameter of the holes formed in layer 20 is greater than that of the holes formed in the grids.
- the invention is to preference applied to display devices at microtips whose electron source has a resistive layer between the cathode conductors and the microtips that rest on this layer resistive.
- Figure 3 is a schematic view and partial view of a device according to the invention which includes such a resistive layer between the cathode conductors and microtips.
- This device of Figure 3 is distinguished of the device of FIG. 2 by the fact that it comprises further a resistive layer 22 between the layer insulator 12 and the cathode conductors 24 which are here meshed as in document (3).
- the device is thus protected against all risk of short circuit.
- the most important advantage of the invention is to increase the anode voltage and, possibly reduce the space between the anode and the safe source of microtip electrons electrical accident likely to destroy the device.
- a insulating layer 26 of silica (FIG. 4) is deposited on grates.
- the thickness of this layer 26 is by example equal to 0.2 ⁇ m.
- This layer 26 can be produced by deposition chemical vapor phase, sputtering or by any other method of depositing thin layers.
- This layer 28 is by example equal to 50 nm.
- This layer 28 is preferably formed by evaporation by means of an electron gun or by spray.
- holes the diameter of which is around 1.4 ⁇ m, are etched in the thin conductive layer 28, the layer insulating 12, the grid layer 14 and the layer insulating 26, inside the conductor meshes cathodic, or more exactly plumb with the domains that define these meshes.
- a method of reactive ion etching to burn the layers metal and insulating layers is preferably, a method of reactive ion etching to burn the layers metal and insulating layers.
- a chemical over-etching of the silica of the layer 12 is carried out, this over-etching being for example a few hundred nanometers (length e in FIG. 4), which makes it possible to enlarge the holes at the level of this layer 12.
- an over-engraving of the layer 26 is made to allow clearing grids around the holes 30 and therefore avoid disturbance of the electric field (during operation of the device) between the microtips 16 and the grids, this disturbance being caused by a charging phenomenon of the insulating layer 26.
- microtips 16 are then produced according to the process described in the document (1) mentioned upper.
- the thin conductive layer 28 can possibly be eliminated by engraving appropriate.
- the thin layer conductive (sufficiently conductive to allow the flow of charges) can be deposited after engraving of the holes, in which case the bottom of the holes is covered by this layer.
- Figure 5 illustrates schematically and partially this case where the thin conductive layer 28 is deposited after etching the holes and we see that the bottom of the holes is covered by this thin layer conductive 28 (which covers the insulating layer 26 in silica already mentioned in the description of the figure 4).
- microtips 16 are thus above the thin layer conductive.
- the deposition of the thin conductive layer, after etching the holes, avoids the etching of this layer.
Description
- une première série d'électrodes parallèles jouant le rôle de conducteurs cathodiques et portant des micropointes ("microtips") en matériau émetteur d'électrons,
- une couche électriquement isolante sur ces conducteurs cathodiques,
- une deuxième série d'électrodes parallèles jouant le rôle de grilles, placées sur cette couche isolante et faisant un angle avec les conducteurs cathodiques, des trous étant formés dans la couche isolante et les grilles pour le passage des micropointes,
- la figure 1 est une vue schématique et partielle d'un dispositif d'affichage à micropointes connu,
- la figure 2 est une vue schématique et partielle d'un dispositif d'affichage à micropointes conforme à la présente invention,
- la figure 3 est une vue schématique et partielle d'un autre dispositif conforme à la présente invention, dans lequel une couche résistive est formée sur les conducteurs cathodiques,
- la figure 4 est une vue schématique et partielle d'un autre dispositif conforme à l'invention dans lequel la couche isolante qui est formée sur les grilles est surgravée, et
- la figure 5 est une vue schématique et partielle d'un autre dispositif conforme à l'invention dans lequel une fine couche électriquement conductrice est déposée après gravure des trous du dispositif.
- les conducteurs cathodiques, tels que le conducteur cathodique 24 sont en niobium, ont une épaisseur de 0,2 µm et une structure en treillis avec par exemple des mailles carrées dont le pas vaut 25 µm et ces conducteurs cathodiques sont gravés pour former les colonnes du dispositif,
- la couche résistive 22 est en silicium amorphe dopé au phosphore, elle est déposée sur les conducteurs cathodiques et l'épaisseur de cette couche résistive est de l'ordre de 1 µm,
- la couche isolante 12 est en silice, elle est déposée sur la couche résistive 22 en silicium et l'épaisseur de cette couche isolante 12 est également de l'ordre de 1 µm, et
- une couche métallique 14 en niobium formant la couche de grille est déposée sur cette couche isolante 12 en silice et l'épaisseur de cette couche métallique est de l'ordre de 0,4 µm, cette couche métallique en niobium étant gravée pour former les grilles suivant les lignes du dispositif.
- une meilleure adhérence d'une couche de nickel (non représentée) qui est utilisée lors de l'élaboration des micropointes (voir le document (1))
- l'assurance de la continuité électrique pendant la phase de dissolution électrochimique du nickel.
Claims (9)
- Dispositif d'affichage à micropointes, ce dispositif comprenant un premier substrat électriquement isolant (2) portant une anode cathodoluminescente (4, 6) et un deuxième substrat électriquement isolant (8) portant, en regard du premier substrat (2) :une première série d'électrodes parallèles jouant le rôle de conducteurs cathodiques (10, 24) et portant des micropointes (16) en matériau émetteur d'électrons,une couche électriquement isolante (12) sur ces conducteurs cathodiques,une deuxième série d'électrodes parallèles jouant le rôle de grilles (14), placées sur cette couche isolante (12) et faisant un angle avec les conducteurs cathodiques, des trous (17, 30) étant formés dans la couche isolante et les grilles pour le passage des micropointes,
- Dispositif selon la revendication 1, caractérisé en ce que les moyens évitant la perturbation du champ électrique comprennent une autre couche mince (28) qui recouvre ladite couche mince isolante et qui est suffisamment conductrice pour permettre l'écoulement de charges électriques parasites susceptibles d'être créées pendant le fonctionnement du dispositif et qui comporte aussi des trous en regard des micropointes.
- Dispositif selon la revendication 1, caractérisé en ce que le diamètre des trous formés dans ladite couche mince isolante (26) est supérieur au diamètre des trous formés dans les grilles, pour éviter la perturbation du champ électrique créé entre les micropointes et les grilles, cette couche mince isolante étant ainsi surgravée.
- Dispositif selon l'une quelconque des revendications 1 à 3, caractérisé en ce qu'il comprend en outre une couche résistive (22) qui est interposée entre chaque conducteur cathodique et les micropointes (16) correspondantes, ces dernières reposant ainsi sur cette couche résistive.
- Procédé de fabrication du dispositif d'affichage à micropointes selon la revendication 1, procédé selon lequel on forme ladite anode cathodoluminescente (4, 6) sur le premier substrat (2), et on forme sur le deuxième substrat (8) les conducteurs cathodiques (10, 24), ladite couche électriquement isolante (12), une couche de grille (14) destinée à la formation des grilles, les trous (17, 30) puis les micropointes (16), ce procédé étant caractérisé en ce qu'on forme en outre ladite couche mince (20, 26) électriquement isolante sur la couche de grille et en ce que ladite couche mince électriquement isolante est associée à des moyens évitant la perturbation, par cette couche mince électriquement isolante, du champ électrique créé entre les micropointes et les grilles.
- Procédé selon la revendication 5, caractérisé en ce que ladite couche mince électriquement isolante (26) est formée avant les trous.
- Procédé selon la revendication 6, caractérisé en ce qu'on forme en outre, sur ladite couche mince électriquement isolante (26), une autre couche mince (28) qui est suffisamment conductrice pour permettre l'écoulement de charges électriques parasites susceptibles d'être créées pendant le fonctionnement du dispositif.
- Procédé selon l'une quelconque des revendications 6 et 7, caractérisé en ce qu'on forme sur la couche mince la plus externe réalisée sur les grilles une couche protectrice.
- Procédé selon l'une quelconque des revendications 7 et 8, caractérisé en ce que la ou les couches formées par-dessus les grilles, qui sont résistives ou conductrices, sont déposées après la réalisation des trous.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9303072A FR2702869B1 (fr) | 1993-03-17 | 1993-03-17 | Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif. |
FR9303072 | 1993-03-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0616356A1 EP0616356A1 (fr) | 1994-09-21 |
EP0616356B1 true EP0616356B1 (fr) | 1998-05-27 |
Family
ID=9445062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19940400562 Expired - Lifetime EP0616356B1 (fr) | 1993-03-17 | 1994-03-15 | Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0616356B1 (fr) |
JP (1) | JPH06325690A (fr) |
DE (1) | DE69410512T2 (fr) |
FR (1) | FR2702869B1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2724041B1 (fr) * | 1994-08-24 | 1997-04-11 | Pixel Int Sa | Ecran plat de visualisation a haute tension inter-electrodes |
RU2118011C1 (ru) * | 1996-05-08 | 1998-08-20 | Евгений Инвиевич Гиваргизов | Автоэмиссионный триод, устройство на его основе и способ его изготовления |
US5847407A (en) * | 1997-02-03 | 1998-12-08 | Motorola Inc. | Charge dissipation field emission device |
US6373174B1 (en) | 1999-12-10 | 2002-04-16 | Motorola, Inc. | Field emission device having a surface passivation layer |
FR2836280B1 (fr) | 2002-02-19 | 2004-04-02 | Commissariat Energie Atomique | Structure de cathode a couche emissive formee sur une couche resistive |
FR2836279B1 (fr) * | 2002-02-19 | 2004-09-24 | Commissariat Energie Atomique | Structure de cathode pour ecran emissif |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
FR2568394B1 (fr) * | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
DE68913419T2 (de) * | 1988-03-25 | 1994-06-01 | Thomson Csf | Herstellungsverfahren von feldemissions-elektronenquellen und anwendung zur herstellung von emitter-matrizen. |
FR2663462B1 (fr) * | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
-
1993
- 1993-03-17 FR FR9303072A patent/FR2702869B1/fr not_active Expired - Fee Related
-
1994
- 1994-03-15 EP EP19940400562 patent/EP0616356B1/fr not_active Expired - Lifetime
- 1994-03-15 DE DE1994610512 patent/DE69410512T2/de not_active Expired - Lifetime
- 1994-03-16 JP JP4454894A patent/JPH06325690A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE69410512T2 (de) | 1998-12-17 |
JPH06325690A (ja) | 1994-11-25 |
FR2702869A1 (fr) | 1994-09-23 |
FR2702869B1 (fr) | 1995-04-21 |
DE69410512D1 (de) | 1998-07-02 |
EP0616356A1 (fr) | 1994-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0461990B1 (fr) | Source d'électrons à cathodes émissives à micropointes | |
EP0234989B1 (fr) | Procédé de fabrication d'un dispositif de visualisation par cathodoluminescence excitée par émission de champ | |
EP0172089B1 (fr) | Dispositif de visualisation par cathodoluminescence excitée par émission de champ | |
EP0558393B1 (fr) | Source d'électrons à cathodes émissives à micropointes et dispositif de visualisation par cathodoluminescence excitée par émission de champ utilisant cette source | |
EP1826797B1 (fr) | Structure de cathode à nanotubes pour écran émissif | |
FR2710781A1 (fr) | Dispositif formant cathode d'émission de champ. | |
EP0616356B1 (fr) | Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif | |
US5717285A (en) | Microtip display device having a current limiting layer and a charge avoiding layer | |
FR2742578A1 (fr) | Cathode a emission de champ et son procede de fabrication | |
EP0708473B1 (fr) | Procédé de fabrication d'une source d'électrons à micropointes | |
EP1476888B1 (fr) | Structure de cathode pour ecran emissif | |
EP0697710B1 (fr) | Procédé de fabrication d'une source d'électrons à micropointes | |
EP0856868B1 (fr) | Source d'électrons à micropointes et dispositif de visualisation avec telle source | |
WO1998025291A1 (fr) | Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source | |
EP0625277B1 (fr) | Ecran plat a micropointes protegees individuellement par dipole | |
EP1210721B1 (fr) | Ecran plat a emission de champ avec electrode de modulation | |
FR2750533A1 (fr) | Cathode froide a emission de champ et tube a rayons cathodiques comportant celle-ci | |
WO1994014182A1 (fr) | Procede de realisation sur silicium, de cathodes emissives a micropointes, pour ecran plat de petites dimensions, et produits obtenus | |
JPH04292831A (ja) | 電界放出型陰極装置 | |
WO2000021112A1 (fr) | Source d'electrons comportant au moins une electrode de protection contre des emissions parasites | |
FR2719155A1 (fr) | Procédé de réalisation de sources d'électrons à micropointes et source d'électrons à micropointes obtenue par ce procédé. | |
JP2956565B2 (ja) | 電界放出冷陰極の製造方法 | |
EP2104944A1 (fr) | Structure de cathode pour ecran plat avec grille de refocalisation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): CH DE GB IT LI NL |
|
17P | Request for examination filed |
Effective date: 19950223 |
|
17Q | First examination report despatched |
Effective date: 19960610 |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): CH DE GB IT LI NL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 19980527 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REF | Corresponds to: |
Ref document number: 69410512 Country of ref document: DE Date of ref document: 19980702 |
|
ITF | It: translation for a ep patent filed |
Owner name: JACOBACCI & PERANI S.P.A. |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19980730 |
|
NLV1 | Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19990331 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19990331 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20070522 Year of fee payment: 14 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20080315 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20110221 Year of fee payment: 18 Ref country code: DE Payment date: 20110331 Year of fee payment: 18 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20120315 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20120315 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 69410512 Country of ref document: DE Effective date: 20121002 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121002 |