EP0586651A1 - Chambre de traitement - Google Patents

Chambre de traitement

Info

Publication number
EP0586651A1
EP0586651A1 EP19930905518 EP93905518A EP0586651A1 EP 0586651 A1 EP0586651 A1 EP 0586651A1 EP 19930905518 EP19930905518 EP 19930905518 EP 93905518 A EP93905518 A EP 93905518A EP 0586651 A1 EP0586651 A1 EP 0586651A1
Authority
EP
European Patent Office
Prior art keywords
substrate
chamber
enclosure
susceptor
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19930905518
Other languages
German (de)
English (en)
Inventor
Brian Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
METALS RESEARCH SEMICONDUCTORS Ltd
Original Assignee
METALS RESEARCH SEMICONDUCTORS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by METALS RESEARCH SEMICONDUCTORS Ltd filed Critical METALS RESEARCH SEMICONDUCTORS Ltd
Publication of EP0586651A1 publication Critical patent/EP0586651A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Abstract

Une chambre de dépôt chimique en phase vapeur permet de fabriquer des plaquettes multicouches destinées aux dispositifs électroniques tels que diodes à laser, transistors, circuits intégrés optoélectroniques et autres. Cette chambre comporte une surface porte-substrat conçue de manière que des réactifs gazeux convergent en passant au-dessus d'elle. Ainsi, la concentration en réactifs ne s'épuise pas au fur et à mesure du dépôt de la substance chimique, cette dernière présentant en outre une épaisseur constante sur toute la plaquette. De plus, la surface porte-substrat est placée de manière symétrique autour d'une sortie par laquelle s'écoulent les excédents de réactifs qui sont ensuite absorbés sans difficulté par un filtre à charbon actif. Cette chambre se prête particulièrement au dépôt chimique organométallique en phase vapeur car le gaz vecteur en balaie les surfaces pendant et après la réaction, ce qui limite la quantité de produits chimiques non désirés qui se déposent dans la chambre.
EP19930905518 1992-03-25 1993-03-05 Chambre de traitement Withdrawn EP0586651A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB929206442A GB9206442D0 (en) 1992-03-25 1992-03-25 Treatment chamber
GB9206442 1992-03-25

Publications (1)

Publication Number Publication Date
EP0586651A1 true EP0586651A1 (fr) 1994-03-16

Family

ID=10712771

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19930905518 Withdrawn EP0586651A1 (fr) 1992-03-25 1993-03-05 Chambre de traitement

Country Status (5)

Country Link
EP (1) EP0586651A1 (fr)
JP (1) JPH06508661A (fr)
AU (1) AU3641993A (fr)
GB (1) GB9206442D0 (fr)
WO (1) WO1993019222A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8889565B2 (en) 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US9127340B2 (en) 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
US7829457B2 (en) 2009-02-20 2010-11-09 Asm International N.V. Protection of conductors from oxidation in deposition chambers
US8507388B2 (en) 2010-04-26 2013-08-13 Asm International N.V. Prevention of oxidation of substrate surfaces in process chambers
US11390950B2 (en) * 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275192A (ja) * 1985-05-31 1986-12-05 Furukawa Electric Co Ltd:The 半導体薄膜気相成長法
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9319222A1 *

Also Published As

Publication number Publication date
GB9206442D0 (en) 1992-05-06
AU3641993A (en) 1993-10-21
WO1993019222A1 (fr) 1993-09-30
JPH06508661A (ja) 1994-09-29

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Legal Events

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