WO1993019222A1 - Chambre de traitement - Google Patents

Chambre de traitement Download PDF

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Publication number
WO1993019222A1
WO1993019222A1 PCT/GB1993/000461 GB9300461W WO9319222A1 WO 1993019222 A1 WO1993019222 A1 WO 1993019222A1 GB 9300461 W GB9300461 W GB 9300461W WO 9319222 A1 WO9319222 A1 WO 9319222A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chamber
enclosure
susceptor
filter
Prior art date
Application number
PCT/GB1993/000461
Other languages
English (en)
Inventor
Brian Turner
Original Assignee
Metals Research Semiconductors Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metals Research Semiconductors Ltd. filed Critical Metals Research Semiconductors Ltd.
Priority to JP5516341A priority Critical patent/JPH06508661A/ja
Publication of WO1993019222A1 publication Critical patent/WO1993019222A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Definitions

  • This invention concerns the deposition of material on substrates or wafers to form layers particularly for use in electronic devices such as laser diodes, transistors opto-electronic integrated circuits and the like.
  • CVD chemical vapour deposition
  • CVD is carried out in reaction chambers in which a substrate is heated typically by conduction from a graphite susceptor which itself is heated typically using RF induction heating techniques.
  • RF induction heating techniques typically include RF induction heating techniques.
  • other forms of radiant heating may be employed such as using infrared.
  • the reactive gases are normally combined with a carrier gas such as hydrogen before being introduced into the chamber.
  • a carrier gas such as hydrogen
  • thermochemical reactions occur causing constituent parts of the reactive gases to combine with the heated substrate and form a surface layer.
  • changes of temperature, concentration of reactive agents, speed of gas flow and the like can all have significant effects on the uniformity of the deposited epitaxial layer. Indeed it has been noted that as the reactive gases flow across a surface, the removal of some of the -reactive material during their passage means that the layer becomes progressively depleted in the direction of gaseous travel across the surface. Accordingly chamber design and gas flow have been adjusted so as to attempt to compensate for this effect.
  • the reactants producing, the first layer must be replaced abruptly and swiftly by the reactants which will produce the next layer.
  • Manifold systems have been designed to produce appropriate abrupt changeover and further design refinements have been incorporated to remove unwanted pressure transients in the gaseous stream.
  • Reaction chambers vary from horizontal reactors in which a wafer is located on a susceptor with its face substantially parallel to the gas stream to vertical arrangements in which the substrate surface is substantially perpendicular to the gas flow.
  • a combination approach is the so-called barrel reactor in which a large number of individual substrates can be located on a susceptor which itself conforms to part of the internal surface of the barrel and the carrier and reactant gases are introduced at the top and exit from the lower end of the reactor.
  • a particular problem associated with many CVD systems is the contamination of the reactor walls with some of the reactive components of the gases which have been decomposed in the chamber during the reaction. Although the heated substrate attracts these materials, during prolonged treatment processes, considerable build-up of the reactive materials can occur on parts of the reactor which are not so well cooled as others and in view of the nature of such materials cleaning the chamber can be difficult and sometimes hazardous.
  • MOCVD metal organic chemical vapour deposition
  • a reaction chamber for chemical vapour deposition particularly metal organic chemical vapour deposition comprises an enclosure having a substrate supporting surface located generally symmetrically around a central exit, means within the enclosure to cause gaseous reactants introduced therein to pass in a generally radial and converging manner over the substrate material in order to reach the exit, heating means for heating the substrate material and a body located centrally within the enclosure to reduce the volume available to the gaseous reactants and define a generally annular cavity through which the gaseous reactants have to pass.
  • the body includes cooling means to reduce the temperature of its surface, and that of adjoining devices, below that at which vapour deposition will normally occur thereon during operation of the enclosure.
  • the centrally located body is itself preferably a hollow container the outside surface of which is shaped so as to define with at least the interior wall of the main enclosure, the said annular passage "for the gaseous reactants.
  • the interior of the centrally located body may be filled at least in part with a cooling fluid such as water.
  • a fluid circulation means may be provided to circulate fluid to and from the body, the flow rate being selected so as to maintain the temperature of the body at the desired level.
  • the space between the enclosure and the centrally located body may be divided into a plurality of annular paths by the interposition of hollow shells spaced from each other and from the central body and from the inside surface of the enclosure, the said spacing in each event defining an annular passage through which gaseous products can pass.
  • a first passage exits between the inside wall surface of the enclosure and one of the shells, another passage exists between two adjacent intermediate shells and a further passage exists between the inside surface of the innermost shell and the external surface of the central body.
  • three parallel paths are defined by means of two such shells and a region of the outer of the said two shells- which lies symmetrically around the gas exit which communicates with each of the three passages, is formed as a susceptor on which substrate material can be located.
  • means is provided for introducing carrier gas such as hydrogen into the outer and inner said parallel passages and further means is provided for introducing the carrier gas together with gaseous reagents in combination therewith into the central passage, which combination of gases are thereby forced to flow over the heated substrate material before reaching the exit.
  • carrier gas passing internally and externally of the annular passage containing the carrier gas and gaseous reactants, serves not only to purge but also cool the regions of the enclosure through which it is flowing .
  • filter means is provided between the exit and exhaust to absorb any reactive materials leaving the enclosure, before they pass to exhaust.
  • a charcoal filter may for example be used to collect reactive materials such as phosphorus, aresnic, gallium and indium all of which are typical components of reactive gaseous products which will be supplied to such an enclosure to form epitaxial layers on substrate materials.
  • the exit from the main enclosure is in the form of a tubular extension which is adapted to be connected to a housing containing the filter, and a removable inner tube is provided for conveying the mixture of unused reactant gases and at least some of the carrier gas straight to the filter.
  • the annular space between the central tube and the said tubular extension of the main enclosure can be used to convey only uncontaminated carrier gas into the filter housing so that after the reaction process has been completed and treated substrate is ready to be removed, the enclosure can be purged with an appropriate gas and before opening the enclosure, the filter chamber can be removed from the outlet extension of the main enclosure and the inner tube removed therefrom into a safe place to reduce the possibility of fire or explosion which might arise if the reactive deposition on its inside surface is allowed to come into contact with air for any extended period of time.
  • the removable tubular passage for conveying carrier gases and surplus reactant gases to the filter chamber is formed from quartz.
  • the main outer enclosure is formed in two parts, a lower cup shaped housing from quartz and an upper domed lid formed from stainless steel.
  • the internal central body is formed from stainless steel and is hollow to allow it to contain water or other cooling liquid.
  • the intermediate shells interposed between the outer housing and the inner central body are formed from quartz.
  • part of the assembly which carries the substrate which is to be coated by vapour deposition is rotated relative to the gas flow so as to produce a more uniform deposition of material during the vapour deposition process.
  • the susceptor may be in two parts, a stationary outer member and an inner member of complementary shape, to permit rotation of it within the outer member.
  • the inner member may be driven in rotation by the appropriate supply of carrier gas under pressure to its underside, which may be formed with grooves to assist this rotation.
  • the susceptor on which the substrate is mounted may be formed from graphite and where a so-called barrel reactor design is adopted for the overall enclosure, such that the susceptor surface on which the substrate is mounted forms the inside of the inverted hollow frustoconical shell, the susceptor is conveniently formed from two such inverted frustoconical shells one lying within the other, each having an aligned central aperture to define part of the exit from the chamber, and the inner surface of the inner shell is machined to form a plurality of trapezoidally shaped facets onto each of which can be secured a wafer of substrate material.
  • the latter are in the form of thin wafers and the inner shell may be formed with appropriate wells or recesses into which the wafers fit.
  • the temperature of the susceptor is preferably monitored by means of thermocouples or the like which may be embedded within the susceptor and electrical conductors connected thereto for feeding signals therefrom to an appropriate monitoring circuit and control of display are conveniently fed via the outlet extension of the main casing to extend laterally through the junction between it and the filter housing where the latter is fitted.
  • Heating may be by means of electrical resistance heating, RF induction heating, infrared radiation or any other form of heating which is convenient having regard to the circumstances. RF induction heating is preferred.
  • the upper surface of the susceptor must likewise be substantially horizontal and planar and in this event the walls of the intermediate shell and central cooling body within the overall enclosure must likewise possess substantially planar underside surfaces to extend substantially parallel to and spaced from the susceptor and the shell respectively.
  • the susceptor may be in the form of an inverted truncated cone or may itself be a substantially planar member the depth of which is sufficient to produce a substantially uniform temperature when heated for raising the temperature of the substrate material on its upper surface.
  • a method of forming epitaxial layers of material on substrate comprising the steps of locating one or more pieces of the substrate on the surface of a susceptor which is either generally circular or frustoconical and which contain a central aperture through which gases can escape, causing a gaseous mixture containing at least one reactive component which will react with the surface of the heated substrate, to pass over the substrate in a radially inwardly converging manner to exit from the central aperture in the susceptor, and constraining the gaseous mixture into a relatively narrow space between the susceptor and wall of a member having a similar complimentary shape to that of at least part of the susceptor thereby to constrain the gaseous mixture into close proximity with the heated substrate material as the gaseous mixture passes thereover.
  • the method additionally includes the step of rotating part of the assembly relative to the gaseous mixture so as to improve the uniformity of deposition of reactive material onto the substrate.
  • the method also preferably includes the step of circulating cooling fluid through at least part of the overall assembly so as to cool some of the surfaces within the overall assembly and thereby reduce the prereaction and courage deposition of exhaust reactive materials thereon.
  • the method also includes the step of conveying the exiting gaseous mixture to exhaust through a filter such as a charcoal filter to assist in removing undesirable reactive components and gases from the mixture before it exhausts.
  • a filter such as a charcoal filter to assist in removing undesirable reactive components and gases from the mixture before it exhausts.
  • the method also includes the step of conveying the exiting gases to the filter through a removable tube, typically a quartz tube.
  • the invention also lies in a method of preparing a vapour deposition chamber, and exhaust system before a subsequent deposition process to enable volatile products of reaction such as reactive components deposited during a previous vapour deposition process can be removed, comprising the steps of flushing the chamber and exhaust system with carrier gas such as hydrogen after the deposition process has been carried out and thereafter removing the filter and its housing from the exhaust line and removing from the exhaust line the removable tube and if appropriate immersing the tube and the filter in a liquid such as water so as to keep air from the components and thereby prevent oxidation and possible spontaneous combustion or explosion occurring, as may occur if for example phospherus has been coated on the transfer tube or in the filter, replacing the tube and filter with uncontaminated items and reassembling the apparatus.
  • carrier gas such as hydrogen
  • the replacement items may be fresh tube and filter elements or may be the original items after suitable cleaning as by abrasion or chemical cleaning.
  • the invention also lies in wafers of substrate having epitaxial layers formed thereon by vapour deposition when the method is carried out in a vapour deposition chamber constructed and operated in accordance with the invention.
  • Figure 1 is a cross section through a vapour deposition chamber, transfer tube and filter constructed in accordance with the invention.
  • Figure 2 is a cross section through the lower part of a chamber such as is shown in Figure 1 in which the substrate supporting susceptor presents a generally flat horizontal upper surface for mounting the substrate, and
  • FIG 3 illustrates a still further embodiment of the invention in which the susceptor is itself a generally thin cylindrical plate thereby enabling the lower part of the overall casing to be in the form-of a cylindrical member having a generally flat base.
  • Figure 1 shows a reaction chamber for performing MOCVD in combination with a filter for removing unwanted bi- products and excess reagent from the exhaust gases and illustrates one embodiment of the invention disclosed herein.
  • the reaction chamber is constructed from an assembly of shells some made of steel and others of quartz so as to form a series of annular paths through which gases can flow from an inlet region to an outlet region. In passing through the chamber the gases pass over the surface of heated substrate so as to produce molecular deposition thereon to form epitaxial layers of material.
  • the outermost casing is formed from,two shells 10 and 12 which co-operate to form a barrel shaped structure.
  • the upper shell 10 is of stainless steel whilst the lower shell 12 is of quartz.
  • the shell 10 includes a peripheral flange 14 containing an annular groove 16 within which an O-ring 18 is fitted for sealing against the upper surface of an enlarged peripheral edge region 20 of the shell 12.
  • the two shells are held together by means of a ring 22 which is secured to the underside of the flange 14 and itself extends below the enlarged periphery 20 of the shell 12 and urges the latter into contact with the seal 16.
  • the central upper region of the shell 10 contains an opening 24 which is closed by a plate 26 through which tubes 28 and 30 extend and which additionally includes drillings such as 32 for the supply of gas to the enclosure.
  • the opening 24 is surrounded by an annular platform 34 on which the plate 26 sits and an O-ring 36 in a groove 38 in the platform 34 ensures a gas tight fit.
  • the shells 10 and 12 there is located another pair of shells 40 and 42 which are joined by simple abutment between the lower peripheral edge 44 of the shell 40 and the peripheral platform 46 of the lower shell 42.
  • the upper shell 40 is formed from quartz whilst the lower shell is formed from graphite.
  • the upper shell 40 is in the form of a bell housing
  • the lower shell 42 is more in the form of an upturned frustoconical shell and a complimentary frustoconical shell 48 is fitted within the lower shell 42, the inner shell 48 having formed thereon a series of flat trapezoidal surfaces on which substrate wafers can be affixed.
  • the latter may for example be located within wells or recesses formed in the facets formed on the internal surface of the shell 48 or may simply be stuck to the surface using an appropriate adhesive.
  • the inner graphite shell 48 is designed to rotate within the shell 42 about the central axis of the assembly under the action of gas flow to be described.
  • the relative rotation achieved between (the wafers of substrate material located on the shell 48) and the radially converging gas flow passing over the substrate wafers has been found to produce more uniform deposition on the surface of the wafers.
  • Within the shells 40 and 42 are located two further shells 50 and 52 both formed from quartz and as with shells 40, 42, 50 and 52 are also sealed by means of an abutting join at 54.
  • An inturned lip 56 in the lower shell 54 further assists in maintaining the seal.
  • the two shells 50 and 52 form a body which is somewhat similar in shape but overall smaller than that of the two shells 40 and 42 and generates between the two pairs of shells an annular space 58 around which gases can flow from the top of the assembly towards the bottom. The input and exit of the gas flows will be described later.
  • the innermost body making the assembly comprises a single shell 60 having a generally similar shape to that of the body formed by the two shells 50 and 52 but again being smaller so as to be capable of fitting therewithin.
  • the shell 60 includes an opening 62 surrounded by a peripheral platform 64 which is secured to the underside of a cylindrical manifold 66 which extends from the underside of the plate 26.
  • An O-ring 68 provides a gas tight seal between the interior of the shell 60 and the space 70 between the shell 60 and the shells 50 and 52.
  • Tubes 28 and 30 are of different length and extend through the opening 62 into the interior of the shell 60. Liquid such as water passes down pipe 28 and up pipe 30 at a rate so as to maintain a given level such as that shown at 72 within the shell 60. The flow of liquid may be employed to transfer heat from the shell 60 to a cooling plant (not shown) .
  • the lower end of the shell 52 is formed centrally with a cylindrical housing 74 the wall of which is castellated to define apertures such as 76 through which gas can flow.
  • the housing 74 supports the shell 52 within the graphite shell 42 by fitting within a cylindrical well 78 formed centrally in the shell 42.
  • An intermediate inverted top hat member 80 formed from graphite and thereby providing a bearing surface is fitted into a central aperture 82 in the shell 42, the out turned lip of the top hat member providing a bearing surface on which a radially outwardly extending flange 84 of a quartz tube 86, rests.
  • the cylindrical section of the top hat member 80 also closes off an annular groove 88 formed around the opening in the shell 42 through which the cylindrical section 80 extends, the purpose of which will be described later.
  • the graphite shell 42 constitutes a susceptor which is heated by RF induction from an induction coil shown in cross section at 90.
  • the coil is formed from conductive tubing through which a cooling fluid such as water is passed whilst in use.
  • the heating of the susceptor 42 in turn heats the internal graphite shell 48 and the wafers of substrate located thereon.
  • Thermocouples or like temperature sensing devices such as 92 are embedded in the graphite shell 42 and conductors 94 communicate between the thermocouples and temperature indicating means (not shown) .
  • the quartz tube 86 serves to convey gases from the exit region of the shells defined by the castellated cylindrical housing 74 and a filter housing generally designated 96.
  • the housing 96 is comprised of an upper inverted cup shaped housing 98 closed at its lower end by a plate 100 having a central aperture leading to an exhaust pipe 102 through which exhaust gases flow in the direction of the arrow 104.
  • a cartridge typically of charcoal designated 106 Within the housing is located a cartridge typically of charcoal designated 106 and in known manner the cannister is sealed so as to prevent gases from the tube 86 passing to the exhaust pipe 102 other than through the charcoal filter cartridge 106.
  • the upper end of the housing 98 is secured to the lower flanged end of a tubular extension 108 of the outer lower shell 12 and is held captive thereagainst by means of a split ring 110 having a radially inwardly directed flange 112 which overlies the radially outwardly extending flange 114 at the lower end of the cylindrical extension 108.
  • a sealing ring 116 prevents gases from escaping between the abutting surfaces.
  • a drilling 118 in the upper solid end of the housing 98 communicates with a vertical drilling 120 within which is located as a sliding fit the lower end of a small diameter pipe 122, an O-ring seal 124 engaging the outside of the small diameter tube 122 and providing a gas tight seal within the drilling 120.
  • the tube 122 communicates through a passage 126 with the annular groove 88 previously mentioned in the lower end of the shell 42 and drillings in the graphite shell 42 such as 128 enable gas supplied through the drilling 118, tube 122 and annular groove 88 to pass to grooves such as 130 in the surface of the shell 42 to lift and rotate the inner shell 48 as previously described.
  • the passage 126 is countersunk to facilitate the entry of the upper end of the tube 122 and assembly tolerances are accommodated by spring loading the lower end of the tube
  • Assembly and manufacturing tolerances are also accommodated by means of the sliding sealing engagement of the annular flanges 134 and 136 (provided at the upper central regions of the shells 40 and 50 respectively) , with the generally cylindrical housing 66 which extends between the platform 64 at the upper end of the shell 60 and the underside of the plate 26.
  • the housing 66 includes two cylindrical sections 138 and 140 and the annular flanges 134 and 136 include O-ring seals 142 and 144 respectively and are capable of sliding axially up and down the cylindrical surfaces 138 and 140 respectively whilst still maintaining a gas tight seal therewith.
  • a drilling 146 supplies hydrogen gas to an annular groove 148 to allow hydrogen to pass into the annular space 70 to pass around the outside of the shell 60 and exit through an aperture 150 in the centre of the lower shell 52 to pass into the tube 86.
  • drillings such as 32 allow a carrier gas such as hydrogen together with reagent gases containing reactive ingredients such as arsine, phosphine, and organo metallic components of gallium, and indium and the like to be introduced into the annular space 152 between the housing formed by the two shells 50 and 52 and the housing formed by the shells 40 and 42.
  • the mixture of carrier and reagent gases is thereby forced to travel through the annular space between these shells and finally after passing over the substrate (not shown) located on the sl ⁇ sceptor 48, to pass through the castellations in the castellated cylindrical housing 74 into the tube 86 along with the hydrogen passing through aperture 150.
  • the drilling 32 communicates with an annular groove 154 between the two cylindrical sections 138 and 140 of the member 66.
  • Another set of drillings 156 in the member 66 serves to allow hydrogen to pass via an annular groove 158 into the annular space 160 between the outer housing formed by the shells 10 and 12 and the next inmost housing formed by the shells 40 and 42.
  • Hydrogen introduced into the space 160 passes below the underside of the shell 42 into the cylindrical space 162 within the cylindrical extension 108 of the outermost shell 12, and can pass into the filter chamber containing the filter 106 through the annular gap 164 between the outside of the cylindrical tube 86 and the inside surface of the cylindrical aperture 166, through which the tube passes, where it extends through the upper plate 98 of the housing 96.
  • each of the grooves 148, 154 and 158 is surrounded by a castellated ring 168, 170 and 172 respectively.
  • the inside surface of each of the rings is tapered and the external surface of the cylindrical member 66 is likewise tapered in the region of each of the grooves concerned so that each of the rings is a force fit on the taper. Typically a 10° taper is employed.
  • laminar flow is preferred as the gases flow over the wafers of substrate (not shown) in the lower part of the enclosure.
  • the relatively long path with changes of direction between the upper end of the enclosure and the region where the wafers of substrate are located, enables the mixed gases to assume laminar flow and achieve more uniform deposition on the wafers.
  • the flow of gas under pressure such as hydrogen through the pipe 118 to exit via the grooves such as 130 provides a gas bearing on which the graphite susceptor shell 48 is supported.
  • the virtually frictionless bearing so produced enables the shell 48 to be rotated by the gas flow in known manner without the need for excessive gas energy to produce the rotation.
  • the susceptor shell 48 is fitted into position and wafers are loaded onto it.
  • Shell 52 is positioned into the central recess in susceptor 48.
  • the lower housing shell 12 containing these components is then offered up to the upper part of the enclosure and secured in position by means of ring 22.
  • the enclosure is then evacuated to a full vacuum or pumped full of hydrogen to expel all gas other than hydrogen.
  • the temperature of the susceptor and wafers is reduced to the temperature at which deposition will occur, if a prebake step has been involved. Otherwise the chamber is merely heated up to the desired reaction temperature.
  • the first reagent gas is introduced into the space 152 by opening an appropriate valve (not shown) feeding the appropriate reagent gas to the drilling 32. If the substrate material disassociates on heating, the disassociating component may be replenished in known manner by introducing the apropriate component into the gas stream before the temperature at which disassociation occurs, is reached.
  • a stabilising gas is introduced into the hydrogen flow which will prevent the last layer from decomposing whilst it is still above the congruent evaporation temperature whilst the temperature of the susceptor and wafers is reduced below the congruent evaporation temperature of the last layer of material.
  • the flushing gas can be reduced to hydrogen alone and the heating can be turned off completely allowing the reaction chamber to cool down towards room temperature.
  • the hydrogen flush can be replaced by a dry nitrogen flush.
  • the charcoal filter housing 96 is then broken open and the charcoal filter is removed and put into an appropriate spent filter box such as a nitrogen box. A new uncontaminated charcoal filter is put in place and the housing resealed. Nitrogen purge is continued whilst the housing is split to remove the lower part 12 from the upper part 10.
  • Shell 52 is removed and placed in a nitrogen vessel and thereafter the tube 86 can be lifted out and likewise placed in a safe environment such as nitrogen vessel. Thereafter the treated wafers can be removed from the susceptor and the susceptor itself can be removed and placed in a nitrogen box if required. Typically a fresh susceptor will be used each time.
  • the shell 52 can be cleaned chemically such as using aqua regia or may be abraded to as to remove any reagent material clinging thereto.
  • the tube 86 can be cleaned chemically or by abrasives and reused or a fresh clean tube put in place during reassembly.
  • Figure 2 illustrates a variation of the arrangement shown in Figure 1 wherein the inner shell 60 denoted by 60a in Figure 2 is a flat bottomed container and thereby allows the shell 52 (52a in Figure 2) to be. a similarly shallow tray-like member in place of the f ustoconical shell of item 52 in Figure 1.
  • the susceptor must now present the wafers in a substantially horizontal manner so as to preserve a generally constant spacing between them and the underside of the shell 52a.
  • One of the wafers is denoted by reference number 53 in Figure 2 and the modified support susceptor 48a is shown fitted to the rest of the susceptor 42a within which the thermocouples such as 92 are embedded.
  • the gas port 128 of Figure 1 is now denoted by 128a but this still feeds the groove 130 formed in the upper surface of the lower susceptor part 42a for the purposes hereinbefore described.
  • Figure 3 illustrates a still further arrangement in which the mass of the susceptor can be even further reduced if the lower housing part 12a is formed more as a flat bottomed cylindrical member in place of the wine glass • shaped member of Figure 1 and 2.
  • Reference numerals denoting parts which are similar to those in Figure 2 are denoted by the same reference numeral and the element which is of significant difference e.g. the lower susceptor part, is denoted by reference numeral 42b.
  • the gas port 128a is denoted by reference numeral 128b.

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Abstract

Une chambre de dépôt chimique en phase vapeur permet de fabriquer des plaquettes multicouches destinées aux dispositifs électroniques tels que diodes à laser, transistors, circuits intégrés optoélectroniques et autres. Cette chambre comporte une surface porte-substrat conçue de manière que des réactifs gazeux convergent en passant au-dessus d'elle. Ainsi, la concentration en réactifs ne s'épuise pas au fur et à mesure du dépôt de la substance chimique, cette dernière présentant en outre une épaisseur constante sur toute la plaquette. De plus, la surface porte-substrat est placée de manière symétrique autour d'une sortie par laquelle s'écoulent les excédents de réactifs qui sont ensuite absorbés sans difficulté par un filtre à charbon actif. Cette chambre se prête particulièrement au dépôt chimique organométallique en phase vapeur car le gaz vecteur en balaie les surfaces pendant et après la réaction, ce qui limite la quantité de produits chimiques non désirés qui se déposent dans la chambre.
PCT/GB1993/000461 1992-03-25 1993-03-05 Chambre de traitement WO1993019222A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5516341A JPH06508661A (ja) 1992-03-25 1993-03-05 処理室

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB929206442A GB9206442D0 (en) 1992-03-25 1992-03-25 Treatment chamber
GB9206442.7 1992-03-25

Publications (1)

Publication Number Publication Date
WO1993019222A1 true WO1993019222A1 (fr) 1993-09-30

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Application Number Title Priority Date Filing Date
PCT/GB1993/000461 WO1993019222A1 (fr) 1992-03-25 1993-03-05 Chambre de traitement

Country Status (5)

Country Link
EP (1) EP0586651A1 (fr)
JP (1) JPH06508661A (fr)
AU (1) AU3641993A (fr)
GB (1) GB9206442D0 (fr)
WO (1) WO1993019222A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829457B2 (en) 2009-02-20 2010-11-09 Asm International N.V. Protection of conductors from oxidation in deposition chambers
US8507388B2 (en) 2010-04-26 2013-08-13 Asm International N.V. Prevention of oxidation of substrate surfaces in process chambers
US8889565B2 (en) 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US9127340B2 (en) 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
US20220307139A1 (en) * 2017-01-10 2022-09-29 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process

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Publication number Priority date Publication date Assignee Title
EP0203616A2 (fr) * 1985-05-31 1986-12-03 The Furukawa Electric Co., Ltd. Procédé de revêtement d'une couche mince sur un semi-conducteur par dépôt chimique en phase vapeur
EP0283007A2 (fr) * 1987-03-17 1988-09-21 Fujitsu Limited Buse perforée d'un dispositif de dépôt chimique en phase vapeur
GB2206608A (en) * 1987-04-14 1989-01-11 Toshiba Kk Vapour deposition apparatus
EP0445596A2 (fr) * 1990-03-09 1991-09-11 Applied Materials, Inc. Réacteur à dôme double pour le traitement de semi-conducteurs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0203616A2 (fr) * 1985-05-31 1986-12-03 The Furukawa Electric Co., Ltd. Procédé de revêtement d'une couche mince sur un semi-conducteur par dépôt chimique en phase vapeur
EP0283007A2 (fr) * 1987-03-17 1988-09-21 Fujitsu Limited Buse perforée d'un dispositif de dépôt chimique en phase vapeur
GB2206608A (en) * 1987-04-14 1989-01-11 Toshiba Kk Vapour deposition apparatus
EP0445596A2 (fr) * 1990-03-09 1991-09-11 Applied Materials, Inc. Réacteur à dôme double pour le traitement de semi-conducteurs

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8889565B2 (en) 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US9127340B2 (en) 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
US7829457B2 (en) 2009-02-20 2010-11-09 Asm International N.V. Protection of conductors from oxidation in deposition chambers
US8507388B2 (en) 2010-04-26 2013-08-13 Asm International N.V. Prevention of oxidation of substrate surfaces in process chambers
US20220307139A1 (en) * 2017-01-10 2022-09-29 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process

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EP0586651A1 (fr) 1994-03-16
JPH06508661A (ja) 1994-09-29
AU3641993A (en) 1993-10-21
GB9206442D0 (en) 1992-05-06

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