EP0575965A3 - Method of forming semiconductor crystal and semiconductor device - Google Patents

Method of forming semiconductor crystal and semiconductor device Download PDF

Info

Publication number
EP0575965A3
EP0575965A3 EP93109962A EP93109962A EP0575965A3 EP 0575965 A3 EP0575965 A3 EP 0575965A3 EP 93109962 A EP93109962 A EP 93109962A EP 93109962 A EP93109962 A EP 93109962A EP 0575965 A3 EP0575965 A3 EP 0575965A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
forming
semiconductor
crystal
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93109962A
Other versions
EP0575965A2 (en
EP0575965B1 (en
Inventor
Toshiyuki Sameshima
Masaki Hara
Naoki Sano
Gosain Dharam Pal
Atsushi Kono
Jonathan Westwater
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP0575965A2 publication Critical patent/EP0575965A2/en
Publication of EP0575965A3 publication Critical patent/EP0575965A3/en
Application granted granted Critical
Publication of EP0575965B1 publication Critical patent/EP0575965B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
EP93109962A 1992-06-23 1993-06-22 Method of forming semiconductor crystal and semiconductor device Expired - Lifetime EP0575965B1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP18737392 1992-06-23
JP187373/92 1992-06-23
JP18737392 1992-06-23
JP08683593A JP3321890B2 (en) 1992-06-23 1993-03-23 Method of forming semiconductor crystal and semiconductor element
JP8683593 1993-03-23
JP86835/93 1993-03-23

Publications (3)

Publication Number Publication Date
EP0575965A2 EP0575965A2 (en) 1993-12-29
EP0575965A3 true EP0575965A3 (en) 1997-10-08
EP0575965B1 EP0575965B1 (en) 2001-08-16

Family

ID=26427917

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93109962A Expired - Lifetime EP0575965B1 (en) 1992-06-23 1993-06-22 Method of forming semiconductor crystal and semiconductor device

Country Status (6)

Country Link
US (1) US5431126A (en)
EP (1) EP0575965B1 (en)
JP (1) JP3321890B2 (en)
KR (1) KR100250182B1 (en)
DE (1) DE69330583T2 (en)
TW (1) TW282576B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976959A (en) * 1997-05-01 1999-11-02 Industrial Technology Research Institute Method for forming large area or selective area SOI
JP4836333B2 (en) * 2000-01-28 2011-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US6642085B1 (en) 2000-11-03 2003-11-04 The Regents Of The University Of California Thin film transistors on plastic substrates with reflective coatings for radiation protection
JP2004207691A (en) * 2002-12-11 2004-07-22 Sharp Corp Semiconductor thin film manufacturing method and apparatus, semiconductor thin film manufactured by method, and semiconductor element using thin film
US7402445B2 (en) * 2005-05-16 2008-07-22 Wayne State University Method of forming micro-structures and nano-structures
US20090218732A1 (en) * 2008-02-29 2009-09-03 David Cron System and method for edge heating of stretch film
JP5669439B2 (en) * 2010-05-21 2015-02-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61108121A (en) * 1984-11-01 1986-05-26 Sharp Corp Manufacture of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262411A (en) * 1977-09-08 1981-04-21 Photon Power, Inc. Method of making a solar cell array
DE2831819A1 (en) * 1978-07-19 1980-01-31 Siemens Ag METHOD FOR DEPOSITING SILICON IN FINE CRYSTALLINE FORM
US4388145A (en) * 1981-10-29 1983-06-14 Xerox Corporation Laser annealing for growth of single crystal semiconductor areas
US4751193A (en) * 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
US4897366A (en) * 1989-01-18 1990-01-30 Harris Corporation Method of making silicon-on-insulator islands
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
JP3213338B2 (en) * 1991-05-15 2001-10-02 株式会社リコー Manufacturing method of thin film semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61108121A (en) * 1984-11-01 1986-05-26 Sharp Corp Manufacture of semiconductor device

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
HOPPER G F ET AL: "Improvement in the thickness uniformity of silicon-on-insulator layers formed by dual electron beam recrystallization", JOURNAL OF APPLIED PHYSICS, 15 FEB. 1991, USA, VOL. 69, NR. 4, PAGE(S) 2183 - 2189, ISSN 0021-8979, XP000225203 *
KOBAYASHI Y ET AL: "Recrystallization of polycrystalline silicon islands on fused silica", EXTENDED ABSTRACTS OF THE 15TH CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, TOKYO, JAPAN, 30 AUG.-1 SEPT. 1983, ISBN 4-930813-04-2, 1983, TOKYO, JAPAN, JAPAN SOC. APPL. PHYS, JAPAN, PAGE(S) 35 - 38, XP002035867 *
LEMONS R A ET AL: "Periodic motion of the crystallization front during beam annealing of Si films", APPLIED PHYSICS LETTERS, 15 AUG. 1981, USA, VOL. 39, NR. 4, PAGE(S) 343 - 345, ISSN 0003-6951, XP002035869 *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 289 (E - 442) 2 October 1986 (1986-10-02) *
SCHARFF W ET AL: "Growth of monocrystalline silicon islands on insulating substrates", THIN SOLID FILMS, 30 MARCH 1984, SWITZERLAND, VOL. 113, NR. 4, PAGE(S) 327 - 335, ISSN 0040-6090, XP002035868 *

Also Published As

Publication number Publication date
KR940006187A (en) 1994-03-23
JP3321890B2 (en) 2002-09-09
KR100250182B1 (en) 2000-05-01
DE69330583D1 (en) 2001-09-20
US5431126A (en) 1995-07-11
TW282576B (en) 1996-08-01
EP0575965A2 (en) 1993-12-29
DE69330583T2 (en) 2002-06-13
JPH06168876A (en) 1994-06-14
EP0575965B1 (en) 2001-08-16

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