EP0485285B1 - Dispositif électrooptique bistable, écran comportant un tel dispositif et procédé de mise en oeuvre de cet écran - Google Patents
Dispositif électrooptique bistable, écran comportant un tel dispositif et procédé de mise en oeuvre de cet écran Download PDFInfo
- Publication number
- EP0485285B1 EP0485285B1 EP91402973A EP91402973A EP0485285B1 EP 0485285 B1 EP0485285 B1 EP 0485285B1 EP 91402973 A EP91402973 A EP 91402973A EP 91402973 A EP91402973 A EP 91402973A EP 0485285 B1 EP0485285 B1 EP 0485285B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bistable
- material layer
- layer
- conductive material
- cathodoluminescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims description 85
- 239000004020 conductor Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 117
- 230000004907 flux Effects 0.000 description 21
- 230000005284 excitation Effects 0.000 description 18
- 230000001133 acceleration Effects 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 210000002858 crystal cell Anatomy 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000021183 entrée Nutrition 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 235000020004 porter Nutrition 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
Definitions
- the present invention relates to a bistable electrooptical device, a screen comprising such a device and a method for implementing this screen. It applies in particular to display and visualization but also to optical logic systems such as optical computers.
- Bistable electrooptical devices are known, such as those described in the document "Electro-optic applications of ferroelectric liquid crystals to optical computing" written by M.A. Handschy et al. and published in the journal Ferroelectrics 1988, vol.85, pp.279-289 published by Gordon and Breach Science publishers SA These include a liquid crystal cell attached to a layer of photoconductive material, the whole being controlled by an external luminous flux.
- the liquid crystal cell may be transparent or opaque and may or may not transmit the control light beam.
- the resistivity of the photoconductive material is reduced whereas when the transmission is substantially zero, the resistivity becomes very high.
- the transition from one to the other of the conductive or insulating states is carried out according to a hysteresis curve: at a given light flux, there may exist two states of transmission of the cell associated with the photoconductor such that the photoconductive material can be in either state (conductive or insulating). Logical information can thus be recorded.
- Optical computer memories work with such devices although these perform poorly. Indeed, the switching time of such a bistable device is long (a few milliseconds) which prohibits the carrying out of logic operations at high frequencies.
- the object of the present invention is to provide a bistable electro-optical device with rapid tilting time, of the order of a microsecond.
- a device according to the invention has the advantage of a simple embodiment using well-controlled manufacturing techniques.
- the first substrate and the first layer of conductive material are transparent.
- a bistable element comprises a second layer of conductive material, the first and the second layers of conductive material being separated and deposited on the first substrate, the layer of photoconductive material at least partially covering the first and second layers of conductive material so as to electrically connect these layers of conductive material, the layers of conductive material and of photoconductive material forming a substantially coplanar structure covered by the layer of cathodoluminescent material.
- the second layer of conductive material may optionally be transparent.
- an insulating layer is interposed between the substantially coplanar structure and the layer of cathodoluminescent material, this insulating layer being provided with an opening pierced at the level of the second layer of conductive material so that an electrical contact is established between the second layer of conductive material and the layer of cathodoluminescent material.
- This insulating layer makes it possible to isolate the first layer of conductive material and the layer of cathodoluminescent material, when the photoconductive material does not completely cover the first layer of conductive material.
- the first layer of conductive material is deposited on the first substrate, the layer of photoconductive material covering at least partially the first layer of conductive material, these layers forming a stacked structure covered by the layer of cathodoluminescent material , and in that said bistable element comprises means for electrically insulating the first layer of conductive material from the layer of cathodoluminescent material.
- said means for electrically insulating the first layer of conductive material from the layer of cathodoluminescent material may consist of an extension of the layer of photoconductive material completely covering the first layer of conductive material.
- Said means for electrically insulating the first layer of conductive material from the layer of cathodoluminescent material may consist of an insulating layer covering the stacked structure, when the layer of photoconductive material partially covers the first layer of conductive material, this insulating layer being provided an opening at the layer of photoconductive material so as to ensure electrical contact between the layer of photoconductive material and the layer of cathodoluminescent material.
- the stacking structure comprises a second layer of conductive material covering at least partially the layer of photoconductive material.
- This second layer can be partially arranged on the substrate.
- the bistable device has two operating modes detailed below, one with a constant or zero excitation light flux, the other at a constant excitation voltage.
- the device comprises a light source arranged for example outside the enclosure.
- the external light source is advantageously placed on the side of the first substrate, the latter as well as the layer of first conductive material which must then be transparent. Furthermore, when the device of the invention is used in a display screen, the light emitted by the cathodoluminescent material is advantageously transmitted through layers interposed between this material and the first substrate, the assembly having to be transparent.
- cathodoluminescent material can be used: one can cite in particular a source of electrons with emissive cathodes with microtips, a source of electrons with semiconductor diodes having a metal-insulating metal structure or any other source of electrons.
- the device comprises several bistable elements
- a single layer of cathodoluminescent material is common to all the bistable elements.
- the device comprises several bistable elements
- these elements can be arranged in a matrix. This arrangement allows a multiplexed operation of the bistable elements, which can facilitate the control of the device.
- the first layers of conductive material are advantageously connected together in parallel conductive columns and the excitation means is controlled along parallel lines.
- Another object of the present invention is to take advantage of the bistability of the preceding device and therefore the possibility of memorizing a state to produce a very bright advantageously multiplexed flat display screen.
- the present invention therefore relates to a flat screen comprising a bistable device comprising several bistable elements arranged in rows and in columns, each bistable element of a line and a column forming a pixel of the screen.
- the number of lines of such a screen is not limited. Large screens can be produced while retaining simplicity of control.
- the signals corresponding to the information to be displayed are delivered on the conductive columns produced by the first layers of conductive material connected to each other. These conductive columns are anodes; they have much lower capacities (by a factor of 500 to 1000) than cathodes to which these signals are usually applied.
- the capacitive power required to control the screen is reduced accordingly. Indeed, the sources of electrons have limited thicknesses and therefore high capacities whereas a bistable element taking into account the thickness of vacuum has a lower capacity.
- the present invention also relates to a method for the implementation of such a screen.
- Figure 1 schematically shows a sectional view of a bistable electrooptical device according to the invention.
- This device comprises a first substrate 10 possibly transparent, for example made of glass, and a second substrate 12, for example made of glass too.
- a seal 14 for example made of fusible glass, hermetically seals the first and second substrates 10, 12 between them so as to obtain an enclosure in which a high vacuum is produced (for example, 10 ⁇ 6 mm Hg).
- the device comprises, contained in said enclosure, several bistable elements 16 arranged in a matrix along lines and columns.
- Each bistable element 16 comprises, supported by the first substrate, a series of layers forming a stacking structure.
- a first layer 18 of conductive material, possibly transparent, for example of indium tin oxide (ITO) is deposited on the substrate 10; this layer 18 has a thickness of for example 500 ⁇ ; a layer of photoconductive material 20, for example formed of a stack of n+-doped amorphous silicon (a-Si-n+), of amorphous silicon (a-Si) and of nhe-doped amorphous silicon (a-Si-n +), completely covers the first layer of conductive material 18; this layer 20 has for example a thickness of 1 to 2 ⁇ m.
- ITO indium tin oxide
- a second layer of transparent conductive material 24 is deposited so as to make a contact between the layer of photoconductive material 20 and the layer of cathodoluminescent material 22. This contact defines the active area of each bistable element.
- This layer 24 has for example a thickness of 500 to 1000 ⁇ .
- This layer ensures good ohmic contact between the photoconductive material and the cathodoluminescent material 22.
- cathodolumiscent material 22 is common to all the bistable elements. In this way, the deposition of this layer is simplified.
- the first layers of conductive material 18 are connected together to form conductive columns. In this way, it is possible to carry out a multiplexed control of the bistable elements 16 if the excitation means is controllable online.
- the layer 24 is etched so that the contacts between the layer 20 and the layer 22 thus produced define separate bistable elements.
- FIG. 2B schematically represents an alternative embodiment of a bistable element in a stacking arrangement.
- an insulating layer 23 covers the layer of photoconductive material 20.
- This insulating layer 23 has an opening 25 clearing the base of the layer of photoconductive material 20 so as to ensure electrical contact between the layer 20 and the layer of photoluminescent material 22.
- FIG. 3 schematically represents an alternative embodiment of a bistable element.
- the layers are arranged in a substantially coplanar structure.
- the first layer of conductive material 18 as well as the second layer of conductive material 24 are deposited on the first substrate 10; the layer of photoconductive material 20 completely covers the conductive material 18 and partially the layer 24.
- the layer of cathodoluminescent material 22 covers the coplanar structure 18, 20, 24, while having no contact with the layer 18 and contact with the layer 24.
- a bistable element 16 also includes a means 26 for exciting the layer of cathodoluminescent material 22.
- This means 26 is a source of electrons supported by the second substrate 12.
- the means 26 allows an excitation of the successive lines of bistable elements.
- FIG. 4 schematically represents a first embodiment of a means 26 for exciting the cathodoluminescent layer. It is a source of electrons with microtip emissive cathodes. A description of such a source of electrons is found, for example, in French patent application No. 2,623,013.
- conductive lines 28 are deposited on the substrate 12. These lines support microtips 30 capable of emitting electrons. They are covered with an insulating layer 32 pierced with orifices 34 at the locations of the microtips 30.
- lines are formed on the grid while the microtips rest on a common conductive layer.
- FIG. 5 schematically represents a second embodiment of a means for exciting the cathodoluminescent layer. It is a diode electron source with a metal-insulator-metal structure, called MIM (or MDM for metal-dielectric-metal).
- MIM metal-insulator-metal structure
- conductive lines 38 of metal rest on the substrate 12.
- Each conductive line 38 is covered with a thin dielectric layer 40.
- the dielectric (insulating) layers 40 are covered by a single metallic film 42.
- the MIM structure forms a diode capable of emitting electrons.
- FIG. 6 schematically represents a third embodiment of a means for exciting the cathodoluminescent layer. It is a source of electrons with semiconductor diodes. A description of such a source of electrons is found in the aforementioned book.
- Sources with a semiconductor-metal structure and sources with p-n junctions belong to the category of semiconductor diode sources.
- FIG 6 there is shown by way of non-limiting example a source of electrons to semiconductor-metal structure.
- Lines of semiconductor material 44 rest on the substrate 12. These lines 44 are covered by a metallic layer 46.
- control means 48 which can be seen in FIG. 1.
- This control means 48 is connected to the electrodes (18, 28, 36 or 18, 38, 42 or 18, 44, 46) which must be via contacts leaving the enclosure.
- the layers of conductive material 18 act as an anode; the lines drawn in the electron sources are cathodes.
- FIG. 7 representing an output light flux Fs emitted by the cathodoluminescent material (or what amounts to the same an acceleration voltage Va of the electrons emitted by the source of electrons) as a function of the voltage Vak applied between the anode and the cathode at the intersection of which the considered bistable element is located.
- the current emitted by the electron source 26 (fig. 1) is kept fixed by application of an adequate control voltage.
- This voltage is applied between the grid 36 and the cathode 28 considered for a source of electrons with emissive cathodes with microtips (fig. 4), between the metallic film 42 and the metallic layer 38 constituting the cathode considered for a MIM structure (fig. .5), or between the metal layer 46 and the semiconductor layer 44 constituting the cathode considered for a semiconductor structure (fig. 6).
- the electrons emitted by the electron source are more or less accelerated according to the value of the potential difference Vak applied between the anode and the cathode considered.
- the voltage Va When decreasing Vak from a value greater than V1 (part B of the curve), the voltage Va substantially retains its maximum value and then drops sharply to its minimum value when Vak becomes below a threshold Vo approximately equal to 90 V .
- the curve describing the output light flux Fs is identical to that describing the behavior of Va. In fact, when the acceleration voltage is low, the cathodoluminescent material emits little light and the conductivity of the photoconductive material is low.
- the phenomenon is similar but in reverse, when Vak decreases.
- the curve describes a hysteresis cycle comprising an operating zone between V0 and V1 with two stable states.
- the input luminous flux, external luminous flux directed towards the photoconductive material is considered to be constant or zero.
- this input light flux is delivered by a light source 50 disposed outside the enclosure containing the bistable elements.
- This light source is controlled by the control means 48.
- the different bistable elements can be illuminated independently of one another advantageously from the substrate 10.
- Such a light source 50 can for example be produced by one or more lasers or one or more other bistable elements for example.
- the conductivity of the photoconductive material is varied by subjecting it to an increasingly intense input light flux Fe.
- a threshold F1 part C of the curve
- the conductivity is minimal and therefore as before, the voltage Vak is practically entirely brought back to the terminals of the photoconductive material for a low acceleration voltage.
- the output light flux Fs is therefore minimal.
- the conductivity is maximum; the voltage across the photoconductive material is negligible and the acceleration voltage becomes maximum: the output light flux Fs is maximum.
- the curve therefore describes a hysteresis cycle comprising an operating zone between Fo and F1 with two stable states.
- the switching from one to the other of the stable states is obtained in a time of the order of a microsecond. It is thus possible to produce fast optoelectronic memories, competitive with electronic systems and simple to produce.
- a device according to the invention allows the production of a flat display screen.
- FIG. 9 Such a screen is represented diagrammatically in FIG. 9. It takes up the elements of the bistable electrooptical device described above and the references adopted are identical to those of FIG. 1. In the rest of the description, it will be considered that this screen is observed from the side of substrate 10.
- the screen is matrix; the bistable elements 16 are arranged in rows and columns: each bistable element corresponds to a pixel on the screen.
- the first layers of conductive material 18 are interconnected to form conductive columns and the electron sources are controlled online, a bistable element being defined at the intersection of the lines and the columns.
- FIG. 10 Another coplanar structure than that of FIG. 3 is shown diagrammatically in section in FIG. 10.
- the first and second layers of conductive material 18, 24 are deposited on the first substrate 10: the first layer 18 as we have seen, in the form of a conductive column, the second 24 defining the dimensions of the pixel, this second layer being transparent.
- the first and second layers of conductive material 18, 24 are interconnected by a layer of photoconductive material 20 partially covering them.
- a layer of insulating material 23 covers this coplanar arrangement with the exception of a location corresponding to an opening 25 and situated at the level of the second conductive layer 24.
- This coplanar arrangement is covered by a deposit of cathodoluminescent material 22 which has electrical contact with the only second layer 24.
- FIG. 11 schematically represents a section of another structure in stacking than those represented in FIGS. 1, 2A and 2B.
- the first layer of conductive material 18, deposited on the substrate 10, is covered by a layer of photoconductive material 20.
- a second layer of conductive material 24 has a part 24A which at least partially covers the layer of photoconductive material 20 and another part resting on the substrate 10 whose geometry defines the dimensions of the pixel.
- the structure is covered by a layer of cathodoluminescent material 22.
- the electron source 26 (fig. 9) is able to excite the successive lines of pixels on the screen under the action of the control means 48.
- control means 48 delivers control signals to the conductive columns to switch the pixels of this line on or off.
- FIGS. 12A to 12E schematically represent timing diagrams for controlling the state of a pixel on the screen. In these diagrams, the amplitude scales of the potentials are not respected.
- the control of the screen is carried out with constant light flux and constant electron current.
- the conductivity of the photoconductive material of the pixel in question is varied by varying the difference in potentials applied between the anode and the cathode (namely the conductive column associated with the pixel and for example the conductive line of an electron source with cathodes microtip transmitters, the pixel considered being placed at the intersection of this line and this column).
- the electron acceleration voltage is minimum and the pixel is in an extinct state.
- the electron acceleration voltage is maximum and the pixel is in an on state.
- FIG. 12A represents the potential Vl applied to a cathode (line) as a function of time.
- a given line is addressed every frame time Tt.
- the addressing time of a line T1 is divided into two periods: a first period Te devoted to erasing the state of the pixels of the addressed line (all the pixels are brought to an extinct state), a second period Ta of addressing itself during which the pixels are carried in the state which they must take.
- Vl takes a value -VlN, with VlN for example equal to 80 V; during Ta, Vl takes a value -VlB with VlB for example equal to 100 V. Vl takes the value -Vr the rest of the time with Vr for example equal to 95 V.
- FIG. 12B schematically represents the potential VcB applied to a conductive column to obtain a pixel in an on state.
- the potential VcB takes the value -Vc.
- the values Vc and VlN are chosen such that VlN ⁇ Vc is less than Vo lower threshold value of the bistable element (fig. 7). As we saw previously, Vo can be equal to 90 V. VlN being chosen equal to 80 V, Vc is for example equal to 4 V.
- VcB takes the value Vc.
- FIG. 12C schematically represents the difference in potentials Vak between anode and cathode for carrying a pixel in an on state.
- Vak takes the value VlN - Vc, that is to say in the example described 76 V which is much lower than Vo, the photoconductive material has a minimum conductivity resulting in an acceleration voltage minimum of excitation electrons; the output luminous flux is negligible: whatever its previous state (represented by dotted lines in FIG. 12C), the pixel is brought to an extinct state.
- Vak takes the value VlB + Vc, that is to say in the example described 104 V which is much higher than the threshold value V1 (FIG. 7).
- VlB + Vc the threshold value
- FIG. 12D schematically represents the potential VcN applied to a conductive column to get a pixel in an off state.
- the potential VcN takes the value Vc then the value -Vc during the addressing period.
- FIG. 12E schematically represents the difference in potentials Vak between anode and cathode for carrying a pixel in an extinct state whatever its previous state represented by dotted lines in FIG. 12E.
- Vak takes the value VlN + Vc, that is to say in the example described 84 V which is much lower than Vo: the pixel is brought into an extinct state.
- Vak takes the value VlB - Vc, that is to say in the example described 96 V, which is much less than V1: the pixel remains in the previous state, namely extinct .
- N is the number of lines of a screen, thanks to this memorization, a lit state of a pixel is maintained N times longer than in a usual screen where the lit state is only maintained in the period of addressing of the corresponding line. We therefore obtain a much brighter screen than in the prior art.
- the invention is in no way limited to the embodiments more specifically described and shown; on the contrary, it admits all variants.
- other types of electron sources can be used or else, for a screen, other implementation methods are possible.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9013871 | 1990-11-08 | ||
FR9013871A FR2669124B1 (fr) | 1990-11-08 | 1990-11-08 | Dispositif electrooptique bistable, ecran comportant un tel dispositif et procede de mise en óoeuvre de cet ecran. |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0485285A1 EP0485285A1 (fr) | 1992-05-13 |
EP0485285B1 true EP0485285B1 (fr) | 1996-02-28 |
Family
ID=9401984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP91402973A Expired - Lifetime EP0485285B1 (fr) | 1990-11-08 | 1991-11-06 | Dispositif électrooptique bistable, écran comportant un tel dispositif et procédé de mise en oeuvre de cet écran |
Country Status (5)
Country | Link |
---|---|
US (1) | US5278544A (ja) |
EP (1) | EP0485285B1 (ja) |
JP (1) | JP2803417B2 (ja) |
DE (1) | DE69117437T2 (ja) |
FR (1) | FR2669124B1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1992019005A1 (de) * | 1991-04-19 | 1992-10-29 | Hertz Inst Heinrich | Elektronenoptisches bild-endgerät auf der basis einer kaltkathode |
DE69404000T2 (de) * | 1993-05-05 | 1998-01-29 | At & T Corp | Flache Bildwiedergabeanordnung und Herstellungsverfahren |
KR0156032B1 (ko) * | 1993-05-28 | 1998-10-15 | 호소야 레이지 | 전자방출소자 및 그 전자방출소자를 이용한 화상표시장치, 화상표시 장치의 구동장치, 화상표시장치의 화상표시 구동회로 |
FR2713823B1 (fr) * | 1993-12-08 | 1996-01-12 | Commissariat Energie Atomique | Collecteur d'électrons comportant des bandes conductrices commandables indépendamment. |
US5940163A (en) * | 1994-07-19 | 1999-08-17 | Electro Plasma Inc. | Photon coupled color flat panel display and method of manufacture |
US5786663A (en) * | 1994-12-01 | 1998-07-28 | Commissariat A L'energie Atomique | Electron collector having independently controllable conductive strips |
FR2732160B1 (fr) * | 1995-03-22 | 1997-06-13 | Pixtech Sa | Anode d'ecran plat de visualisation a bandes resistives |
US5543691A (en) * | 1995-05-11 | 1996-08-06 | Raytheon Company | Field emission display with focus grid and method of operating same |
US5949395A (en) * | 1995-12-21 | 1999-09-07 | Telegen Corporation | Flat-panel matrix-type light emissive display |
US6252347B1 (en) | 1996-01-16 | 2001-06-26 | Raytheon Company | Field emission display with suspended focusing conductive sheet |
TW420964B (en) * | 1998-02-25 | 2001-02-01 | Toppan Printing Co Ltd | Organic electroluminescence display substrate, method of manufacturing it and organic electroluminescent display element |
JP2004272159A (ja) * | 2003-03-12 | 2004-09-30 | Pioneer Electronic Corp | ディスプレイ装置及び表示パネルの駆動方法 |
JP2005149865A (ja) * | 2003-11-14 | 2005-06-09 | Nippon Hoso Kyokai <Nhk> | 電界放出装置、電界放出基板、駆動装置およびディスプレイ |
JP2005294158A (ja) * | 2004-04-02 | 2005-10-20 | Toshiba Corp | 画像表示装置 |
KR20060124486A (ko) * | 2005-05-31 | 2006-12-05 | 삼성에스디아이 주식회사 | 전자방출표시장치 및 그의 구동방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50103973A (ja) * | 1974-01-12 | 1975-08-16 | ||
US3982158A (en) * | 1974-07-15 | 1976-09-21 | Hughes Aircraft Company | Power distribution control system |
US4140941A (en) * | 1976-03-02 | 1979-02-20 | Ise Electronics Corporation | Cathode-ray display panel |
JPS52107771A (en) * | 1976-03-08 | 1977-09-09 | Toshiba Corp | Panel display and its driving system |
JPS553169A (en) * | 1978-06-22 | 1980-01-10 | Matsushita Electric Ind Co Ltd | Character display unit |
FR2561019B1 (fr) * | 1984-03-09 | 1987-07-17 | Etude Surfaces Lab | Procede de realisation d'ecrans de visualisation plats et ecrans plats obtenus par la mise en oeuvre dudit procede |
FR2568394B1 (fr) * | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
IE850536L (en) * | 1985-03-04 | 1986-09-04 | Robillard Jean J A | Displaying information |
US4801850A (en) * | 1987-07-28 | 1989-01-31 | Xerox Corporation | High brightness vacuum fluorescent display (VFD) devices |
US4924148A (en) * | 1988-06-24 | 1990-05-08 | Tektronix, Inc. | High brightness panel display device |
FR2663462B1 (fr) * | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
-
1990
- 1990-11-08 FR FR9013871A patent/FR2669124B1/fr not_active Expired - Fee Related
-
1991
- 1991-10-21 US US07/779,943 patent/US5278544A/en not_active Expired - Fee Related
- 1991-11-06 DE DE69117437T patent/DE69117437T2/de not_active Expired - Fee Related
- 1991-11-06 EP EP91402973A patent/EP0485285B1/fr not_active Expired - Lifetime
- 1991-11-08 JP JP3319624A patent/JP2803417B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2669124A1 (fr) | 1992-05-15 |
EP0485285A1 (fr) | 1992-05-13 |
DE69117437D1 (de) | 1996-04-04 |
JPH0688975A (ja) | 1994-03-29 |
DE69117437T2 (de) | 1996-09-05 |
JP2803417B2 (ja) | 1998-09-24 |
FR2669124B1 (fr) | 1993-01-22 |
US5278544A (en) | 1994-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0485285B1 (fr) | Dispositif électrooptique bistable, écran comportant un tel dispositif et procédé de mise en oeuvre de cet écran | |
EP0172089B1 (fr) | Dispositif de visualisation par cathodoluminescence excitée par émission de champ | |
EP0364314B1 (fr) | Procédé de lecture de cellules photosensibles du type comportant deux diodes montées en série avec des sens de conduction opposés | |
FR2593343A1 (fr) | Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images | |
FR2488013A1 (fr) | Dispositif a matrice d'elements actifs | |
FR2689312A1 (fr) | Cathode à émission de champ. | |
EP0209535B1 (fr) | Dispositif d'affichage a effet memoire comprenant des couches minces electroluminescente et photoconductrice | |
EP0704877A1 (fr) | Protection électrique d'une anode d'écran plat de visualisation | |
EP0246945B1 (fr) | Ecran de visualisation électrooptique, et procédé de réalisation | |
EP0506528B1 (fr) | Structure de commande matricielle pour écran de visualisation | |
EP0965224B1 (fr) | Procede de commande d'un dispositif photosensible a faible remanence, et dispositif photosensible mettant en oeuvre le procede | |
EP0082052B1 (fr) | Dispositif de visualisation électrochromique à commande thermoélectrique | |
EP1456831B1 (fr) | Panneau de visualisation d'image en forme d'une matrice de cellules electroluminescentes shuntees et avec effet memoire obtenu parmi un element photosensible | |
EP0392918B1 (fr) | Ecran d'affichage électroluminescent à mémoire et à configuration particulière d'électrodes | |
EP0292376B1 (fr) | Dispositif d'affichage électroluminescent à effet mémoire et à demi-teintes | |
EP1419541B1 (fr) | Panneau de visualisation d'images forme d'une matrice de cellules electroluminescentes a effet memoire | |
FR2471643A1 (fr) | Procede d'effacement pour dispositif d'affichage electroluminescent a memoire | |
WO2002048993A1 (fr) | Dispositif d'ecran video numerique | |
EP0014608A1 (fr) | Dispositif d'affichage électro-optique | |
EP0337833A1 (fr) | Procédé de commande point par point d'un panneau à plasma | |
EP0106717B1 (fr) | Ecran de visualisation à adressage actif par photoconducteur | |
WO1989009960A1 (fr) | Dispositif de visualisation et d'ecriture | |
FR2846794A1 (fr) | Panneau organique electroluminescent bi-stable ou chaque cellule comprend une diode de shockley | |
EP0268522A1 (fr) | Dispositif d'affichage matriciel et procédé de commande de ce dispositif | |
EP0688009A1 (fr) | Ecran d'affichage à matrice active à commande multiplexée |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE GB IT NL |
|
17P | Request for examination filed |
Effective date: 19921015 |
|
17Q | First examination report despatched |
Effective date: 19950310 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE GB IT NL |
|
REF | Corresponds to: |
Ref document number: 69117437 Country of ref document: DE Date of ref document: 19960404 |
|
ITF | It: translation for a ep patent filed | ||
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19960522 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 19961128 Year of fee payment: 6 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980601 |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee |
Effective date: 19980601 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 19981104 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 19981116 Year of fee payment: 8 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19991106 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 19991106 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20000901 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED. Effective date: 20051106 |