EP0483662B1 - Verfahren zur Herstellung freitragender Mikrostrukturen - Google Patents

Verfahren zur Herstellung freitragender Mikrostrukturen Download PDF

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Publication number
EP0483662B1
EP0483662B1 EP91118109A EP91118109A EP0483662B1 EP 0483662 B1 EP0483662 B1 EP 0483662B1 EP 91118109 A EP91118109 A EP 91118109A EP 91118109 A EP91118109 A EP 91118109A EP 0483662 B1 EP0483662 B1 EP 0483662B1
Authority
EP
European Patent Office
Prior art keywords
microstructure
layer
microstructures
sacrificial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP91118109A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0483662A2 (de
EP0483662A3 (en
Inventor
Werner Karl Dr. Schomburg
Robert Ruprecht
Gerhard Stern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Karlsruhe GmbH
Original Assignee
Kernforschungszentrum Karlsruhe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungszentrum Karlsruhe GmbH filed Critical Kernforschungszentrum Karlsruhe GmbH
Publication of EP0483662A2 publication Critical patent/EP0483662A2/de
Publication of EP0483662A3 publication Critical patent/EP0483662A3/de
Application granted granted Critical
Publication of EP0483662B1 publication Critical patent/EP0483662B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/08—Perforated or foraminous objects, e.g. sieves

Definitions

  • the invention relates to a method for producing self-supporting microstructures according to the preamble of patent claim 1.
  • microstructures are produced on a starting electroplating layer that is connected to a glass plate. The microstructures are then mechanically separated from the glass plate.
  • a disadvantage of this method is that the intended shape of sensitive microstructures can easily be changed in an undesired manner during the mechanical separation from the glass plate.
  • the object of the invention is to modify a method of the generic type such that microstructures can be separated from the substrate on which they were produced within a few minutes without the structures being adversely affected.
  • FIGS 1 to 7 show the individual process steps.
  • a separating layer 2 made of carbon was evaporated to a thickness of 20 nm on an approximately 0.5 mm thick silicon wafer as substrate 1 with a diameter of approximately 100 mm. With this carbon coating, the edge of the silicon wafer 1 was left free (FIG. 1).
  • the separating layer 2 and the edge of the silicon wafer were coated with a 3 ⁇ m thick sacrificial layer 3 made of titanium by magnetron sputtering.
  • the thickness of the separating layer 2 should advantageously be between 10 and 30 nm. It is also possible to sputter carbon more than approx. 50 nm to 150 nm thick by magnetron sputtering instead of evaporating it.
  • the thickness of the titanium layer 3 is advantageously between 2 and 10 ⁇ m.
  • These structures 4 were connected with a sapphire-filled 2-component adhesive with solid, approximately 2.5 mm thick, ring-shaped frames as a holding structure 5 made of electrolytic copper with an inner diameter of 15 mm and an outer diameter of 20 mm (FIG. 3).
  • the adhesive filled with sapphire is also suitable for applications in which the connection between microstructure 4 and frame 5 has to withstand cryogenic temperatures of up to 3 K.
  • Epoxy-based adhesives are also suitable for applications in which the adhesive bond is not exposed to extreme temperatures.
  • an adhesive for the connection of the microstructure 4 and the holding structure 5 has the advantage that the microstructure 4 does not have to be exposed to as high temperatures as in other connection methods such as e.g. B. diffusion soldering or welding or anodic bonding.
  • a microstructure 4 is connected to a holding structure 5, which consists of a different material than the microstructure 4, the use of an adhesive largely prevents the formation of thermal stresses between the microstructure 4 and the holding structure 5.
  • the carbon of the separation layer 2 largely remained on the sacrificial layer and was burned in an oxygen plasma (FIG. 6).
  • the microstructure 4 was integrated into a frame 5 solution immersed in hydrofluoric acid, in which the sacrificial layer 3 dissolved within a few seconds (FIG. 7).
  • This method has the advantage that self-supporting microstructures can be produced and that these microstructures are stabilized when detached from the substrate by the sacrificial layer and the solid frame, so that undesired changes in the shape of the microstructures caused by the detachment from the substrate can be avoided.
  • the mechanical detachment of microstructures and sacrificial layer from the substrate is facilitated in that tools can be attached to the relatively thick holding structure.
  • the tensile stresses that may be present in the microstructure as a result of the production process are absorbed after the detachment from the substrate and removal of the sacrificial layer from the solid frame, so that there are no changes in shape of the microstructure.
  • the large surface of the sacrificial layer accessible after detachment from the substrate and its small thickness enable the sacrificial layer to be removed quickly within a few seconds.
  • a 1 mm thick lattice-shaped holding structure 5 made of stainless steel was glued to this net structure 4 with an epoxy adhesive, which was surrounded by a closed frame measuring approximately 20 ⁇ 60 mm and the spacing of the webs was approximately 15 mm with a web width of 2 mm.
  • the holding structure 5 With the holding structure 5, the microstructure 4 and the copper layer 3 were removed from the glass plate 1 lifted off and the copper layer 3 in an etching solution of copper (II) chloride and ammonia selectively dissolved against the microstructure of nickel at room temperature.
  • this production process has the advantage that no separating layer is required, since the copper layer also detaches from the glass plate without a separating layer.
  • the use of a grid-shaped holding structure produces a very stable, self-supporting microstructure that can withstand a higher flow pressure when used as a particle filter.
  • the frame around the lattice structure can also be dispensed with under certain circumstances.
  • the detachment from the glass plate is then made more difficult and there is a possibility that the microstructure may be damaged during the detachment.
  • the third application example describes the production of a high-pass filter in the far infrared range: on a 0.5 mm thick silicon wafer 1 with a diameter of 100 mm, a 2 ⁇ m thick titanium layer 2 was sputtered by magnetron sputtering. A 2 ⁇ m thick nickel layer 3 was electroplated onto this titanium layer 2. The electroplated nickel layer 3 adheres to the titanium layer only to a limited extent, so that the titanium layer 2 acts in this case as a separating layer.
  • the diameter of the holes was 50 ⁇ m.
  • the smallest distance between the edges of two holes was about 5 ⁇ m.
  • this production method has the advantage that the separating layer remains completely on the silicon wafer and does not have to be removed from the nickel layer before the latter is dissolved.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)
EP91118109A 1990-10-29 1991-10-24 Verfahren zur Herstellung freitragender Mikrostrukturen Expired - Lifetime EP0483662B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4034365 1990-10-29
DE4034365A DE4034365A1 (de) 1990-10-29 1990-10-29 Verfahren zur herstellung freitragender mikrostrukturen

Publications (3)

Publication Number Publication Date
EP0483662A2 EP0483662A2 (de) 1992-05-06
EP0483662A3 EP0483662A3 (en) 1993-03-03
EP0483662B1 true EP0483662B1 (de) 1994-12-14

Family

ID=6417255

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91118109A Expired - Lifetime EP0483662B1 (de) 1990-10-29 1991-10-24 Verfahren zur Herstellung freitragender Mikrostrukturen

Country Status (2)

Country Link
EP (1) EP0483662B1 (enrdf_load_stackoverflow)
DE (2) DE4034365A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4406600C1 (de) * 1994-03-01 1995-04-27 Kernforschungsz Karlsruhe Verfahren zur Herstellung eines Filters für elektromagnetische Strahlung
WO2000059824A1 (de) 1999-03-31 2000-10-12 Siemens Aktiengesellschaft Verfahren zur herstellung von freitragenden mikrostrukturen, von dünnen flachteilen oder von membranen und verwendung nach diesem verfahren hergestellter mikrostrukturen als widerstandsgitter in einer einrichtung zur messung schwacher gasströmungen
DE10239551A1 (de) * 2002-08-23 2004-03-04 Daimlerchrysler Ag Filterkörper für Rußfilter

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160258B (de) * 1961-06-13 1963-12-27 Richard Steding Verfahren zur Herstellung von Metallfolien auf galvanoplastischem Wege
DE1303000B (enrdf_load_stackoverflow) * 1966-07-06 1971-01-28
DE2512086C3 (de) * 1975-03-19 1978-11-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung freitragender, dünner Metallstrukturen
DE2832408A1 (de) * 1978-07-24 1980-02-14 Siemens Ag Verfahren zur herstellung von praezisionsflachteilen, insbesondere mit mikrooeffnungen
DE3232499A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
DE4034365C2 (enrdf_load_stackoverflow) 1993-03-18
DE4034365A1 (de) 1992-04-30
DE59103890D1 (de) 1995-01-26
EP0483662A2 (de) 1992-05-06
EP0483662A3 (en) 1993-03-03

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