EP0369336A2 - Prozess zur Herstellung von Bipolar- und CMOS-Transistoren auf einem gemeinsamen Substrat - Google Patents

Prozess zur Herstellung von Bipolar- und CMOS-Transistoren auf einem gemeinsamen Substrat Download PDF

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Publication number
EP0369336A2
EP0369336A2 EP89120847A EP89120847A EP0369336A2 EP 0369336 A2 EP0369336 A2 EP 0369336A2 EP 89120847 A EP89120847 A EP 89120847A EP 89120847 A EP89120847 A EP 89120847A EP 0369336 A2 EP0369336 A2 EP 0369336A2
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EP
European Patent Office
Prior art keywords
layer
doped
silicon dioxide
opening
contact
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP89120847A
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English (en)
French (fr)
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EP0369336A3 (de
Inventor
Bami Bastani
Craig Lage
Larry Wong
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National Semiconductor Corp
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National Semiconductor Corp
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Publication date
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Publication of EP0369336A2 publication Critical patent/EP0369336A2/de
Publication of EP0369336A3 publication Critical patent/EP0369336A3/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • BiCMOS processes Another disadvantage of prior art BiCMOS processes is the difficulty of fabricating polycrystal­line resistors in structures manufactured utilizing the process. Because of the sequence of process steps, it typically has been difficult to accurately dope the polycrystalline silicon and obtain the desired resistance. Such limitations in the process technology unduly restrict the freedom of the circuit designer, and are therefore undesirable.
  • Another disadvantage relates to the use of numerous layers of electrical interconnections, now well known in the fabricaticn of integrated circuits. For example, integrated circuits using two layers of polycrystalline silicon interconnections are well known, as are circuits using more than one metal layer. In the formation of such circuits, defects often arise where contact openings must be made through insulating layers to underlying regions, whether conductive or semiconductive.
  • emitters Numerous techniques are well known for the fabrication of emitters in integrated circuits. For example, the formation of emitters using well known masking and diffusion or ion-implantation processes are well known. More recently, the fabrication of emitters from the out diffusion of impurities from doped overlying layers, such as polycrystalline silicon, has become well known.
  • this invention provides a technique for forming self-aligned buried layers, as well as self-aligned coplanar wells in a BiCMOS integrated circuit.
  • a first conductivity-type buried layer is doped using a conventional silicon-nitride-on-silicon-­dioxide mask to block doping from the portions of the wafer where it is not desired.
  • the doped region is then oxidized with a sufficient thickness of silicon dioxide to block further impurity from this region.
  • the silicon nitride is then removed and the opposite conductivity-type buried layer doped using the thick silicon dioxide as a mask. At the completion of the process, the silicon dioxide layer is removed and an epitaxial layer is formed.
  • polycrystal­line silicon resistors are formed by depositing a layer of polycrystalline silicon, masking it and doping it, and then patterning it using conventional photolitho­graphic techniques.
  • This invention also provides a technique for both planarizing and forming openings in insulating layers separating conductive layers from each other, or from the underlying semiconductor, which enables the electrical connections formed to more reliability traverse nonlinearities, such as presented by the edges of such openings.
  • the electrode pattern is coated with two layers of material--first a relatively thin layer of undoped silicon dioxide, followed by a thicker overlying layer of boron- and phosphorus-doped silicon dioxide. In the preferred embodiment about 2% boron and 6.5% phosphorus are used to dope the overlying thicker layer.
  • Both undoped and doped glass are first etched using a dry anisoptropic process to obtain vertical sides for the contact openings.
  • the isotropic process stops when it reaches the undoped underlying glass.
  • the combination of the wet process with the dry process provides contact openings which are smoothly contoured at their uppermost regions and taper down to vertically-­sided openings where they extend to the underlying electrically-conductive layer.
  • a method of forming contact openings in an integrated circuit includes the steps of depositing on a selected material a first layer of undoped silicon dioxide, depositing on the first layer a second layer of doped silicon dioxide, and then forming a contact mask. Contact openings are etched anisotropically through both layers, then isotropically to provide a smoothly contoured profile.
  • This invention provides a technique for forming improved emitters in bipolar transistors, permitting the formation of deeper base regions with lower resistance, as well as almost complete self alignment of the emitter within the bipolar transistor.
  • a silicon dioxide or other layer of insulating material is formed across the region where the emitter is desired, and an opening provided therein.
  • the desired conductivity type impurity is introduced through the opening to form the emitter.
  • a layer of polycrystalline silicon is deposited across the opening and onto the surrounding insulating layer. After doping of this layer of polycrystalline silicon, the structure is heated to cause diffusion out of the polycrystalline silicon and into the substrate. This diffusion assists in breaking down the interface oxide, thereby improving overall device performance.
  • a method for forming a doped emitter region in a semicon­ductor structure comprises defining a location on a semiconductor substrate for the emitter by forming a mask having an opening at that location. Dopant then is introduced into the substrate through the opening from a source of selected conductivity-type impurity. Next, a layer of material is deposited across the opening in contact with the region, the material containing a dopant of the selected conductivity type. Finally, the layer is treated to cause some of the dopant therein to move into the substrate.
  • Figure 1 is a cross-sectional view of a portion of a semiconductor structure from which a bipolar-complementary metal oxide semiconductor (BiCMOS) structure will be fabricated.
  • the structure of Figure 1 includes a P-type silicon substrate 10 upon which a relative thin layer of silicon dioxide 12 is formed by a well known thermal oxidation process.
  • a layer of silicon nitride 15 is deposited using chemical vapor deposition.
  • the silicon nitride is masked and etched to expose a region 17 wherein a P conductivity type buried layer is desired.
  • the buried layer is implanted using boron or other P-type dopant.
  • an oxidation step is performed to create a relatively thick region of silicon dioxide 20 over the portion of the structure where the P-type dopant was introduced.
  • layer 20 will be sufficiently thick to prevent ions from passing through it during a subsequent ion-­implantation step.
  • the appearance of the structure following these steps is shown in Figure 1.
  • the remaining silicon nitride layer 15 then is removed using well known wet-etching processes, and an N-type buried layer implant performed, for example, using arsenic, phosphorus, or other suitable dopant. Then all of the remaining silicon dioxide regions 12 and 20 are removed from the surface of the silicon 10 and a layer of epitaxial silicon 22 deposited. During this step, the implanted P-type and N-type impurities will diffuse outward to form a P-type buried layer 24 and an N-type buried layer 25. Next, the structure is oxidized to form a thin layer of silicon dioxide 27 across the upper surface of the epitaxial layer, and then another layer of silicon nitride 29 is deposited over the oxide 27. The appearance of the structure after these steps of the process is shown in Figure 2.
  • N-type well 30 After formation of the silicon nitride layer 29, another well known photolithographic process is performed to define portions of the epitaxial layer in which N conductivity type wells are desired. These regions will correspond to the locations of the bipolar transistors and the P channel MOS transistors. After removal of the silicon nitride 29 from the regions where the N-type wells are desired, another ion-­implantation step introduces arsenic, phosphorus, or other suitable impurity to form the N-type well 30 shown in Figure 3. After the N-type wells have been implanted, preferably to an impurity concentration of 1016 atoms per cubic centimeter, the structure is oxidized to form a thin layer of silicon dioxide (not shown) above the implanted N well.
  • layer 20 will be sufficiently thick to prevent ions from passing through it during a subsequent ion-implantation step.
  • the remaining silicon nitride then is removed using well-known wet etching techniques and a P well implant 32 then dopes the regions of the epitaxial layer wherein N channel MOS transistors are desired.
  • all of the silicon dioxide is removed to create a structure with the cross-sectional appearance as shown in Figure 3.
  • a self-aligned twin-well structure has been created in which the N-well and the P-well have an essentially planar upper surface.
  • this provides a P-well and an N-well which are in a single focal plane.
  • this provides a substantial advantage. Of course, thousands of similar structures will be present elsewhere on the wafer.
  • masks are defined for the active device areas within the P-well. This is achieved by first forming another thin layer of silicon dioxide and an overlying layer of silicon nitride across the entire surface of of the structure, and then photolithograph­ically exposing regions of the P well 32 where N-type impurity is desired for forming the N channel devices. As shown by Figure 4, a blanket implant introduces the P-type impurity 33 to a concentration of 5x1O16 atoms per cubic centimeter in the desired locations.
  • the photoresist 34 is removed and a new layer deposited to protect the silicon in the P well 32. Then, again using conventional photolithographic processes, the new photoresist is patterned to expose the areas in the N well 30 where silicon dioxide field isolation is desired. Following etching of the silicon nitride layer using the photoresist layer as a mask, the structure is subjected to a prolonged oxidation process to form field oxide layers 35 (see Figure 5) wherever the silicon nitride did not cover the underlying silicon. In general, the field oxide surrounds each transistor to electrically separate it from every other transistor on the substrate. Additionally, the field oxide regions isolate the collector contact of the bipolar transistor from neighboring regions, as will be explained later.
  • a sacrificial oxidation step may be performed at this stage of the process to oxidize away a small portion of the upper surface of the device to further planarize the structure.
  • a threshold implant performed to adjust the threshold voltage of the active devices formed in the structure.
  • the structure includes silicon substrate 10, N-type buried layer 25, N well 30, P-type buried layer 34, P well 32, and silicon dioxide field regions 35. If a sacrificial oxidation step was performed, the resulting silicon dioxide is now removed. Following this step, the thereby exposed upper silicon surface is oxidized to provide a thin layer of silicon dioxide 38, which layer functions as the gate insulator in the CMOS devices. In the preferred embodiment, gate oxide layer 38 is approximately 200 Angstroms thick.
  • a first layer of polycrystalline silicon 40 (see Figure 6) is deposited across the structure and doped to render it conductive. Then using conventional masking and etching techniques, the polysilicon is defined into the gates 41 and 42 of the CMOS transistors. The gate 41 of the N channel transistor and the gate 42 of the P channel transistor are shown in Figure 6. In the preferred embodiment, the first layer of polycry­stalline silicon is approximately 3250 Angstroms thick.
  • the structure is masked to expose only the N-channel devices and then lightly implanted with N conductivity type impurity, using the gates as masks, to form doped regions 45 in the P well 32. These regions provide "lightly doped" drain structures for the nMOS transistors.
  • a thin layer of silicon dioxide (not shown) is deposited, for example, by CVD on the silicon epitaxial wells 30 and 32 and polycrystalline silicon layer 40. Preferably, about 2500 Angstroms of silicon dioxide is deposited.
  • an anisotropic etch creates sidewall spacer oxide regions 47, as also shown in Figure 6.
  • a mask (not shown) is formed over all of the bipolar regions except where a collector contact 56 is desired (see Figure 7), and over all of the P channel MOS region. Then an implantation step is performed to dope the N conductivity. type sources and drains 53, the N conductivity type collector contact 56, and the butting contact 55. In the preferred embodiment, these regions are doped with 1020 atoms per cubic centimeter of N conductivity type impurity. Following that doping operation, another mask (not shown) is formed across all of the surface area of the wafer except for where intrinsic bases 52 of the bipolar transistors are desired. Then the structure is implanted with P conductivity type dopant to dope the base region of the bipolar transistor.
  • a layer 60 of thermally formed silicon dioxide approximately 200 Angstroms thick is grown, followed by 1200 Angstroms deposited by CVD (see Figure 8).
  • This thin layer 60 covers the entire surface of the structure, that is, the polycry­stalline silicon gate electrodes and butting contact, the exposed upper surface of the silicon epitaxial layer, and the surfaces of the field oxide regions.
  • Layer 60 of high temperature oxide will electrically isolate the first layer of polycrystalline silicon electrodes from the second layer except where vias are formed.
  • a mask is formed to define contact openings wherever the second layer of polycrystalline silicon is desired to contact the surface of the structure.
  • One such location is above the doped region 55 of the butting contact area.
  • Another such region is where the emitter 62 of the bipolar transistor is to be formed.
  • openings are etched through the oxide layer 60 using well known etching techniques, and a second layer of polycrystalline silicon 63 about 1500 Angstroms thick is deposited across the upper surface of the structure.
  • This second layer of poly­crystalline silicon will contact the first layer of polycrystalline silicon and the underlying doped region 55 at the butting contact 40, and will contact the epitaxial layer in the bipolar transistor area where the emitter 62 is to be formed.
  • a blanket ion-implantation step dopes the polycrystalline silicon second layer and lowers its resistance.
  • This implant provides high resistance polycrystalline silicon suitable for resistors.
  • the polysilicon is also used as a circuit load element.
  • the polycrystalline layer will have a very high resistance--on the order of gigaohms.
  • the very low capacitance of polysilicon deposited on oxide provides faster switching speeds than conventional prior processes which employed diffused loads.
  • a subsequent masked implant may be employed to further dope regions of the second layer of polycrystalline silicon. Then, using conventional photolithographic techniques, the second layer of polycrystalline silicon is masked and etched to define the butting contact, the emitter contact, and resistors (not shown). The emitter is formed by impurity diffusion out of the second layer of polycrystalline silicon. By doping the second layer of polycrystalline silicon before patterning it, dopant misplacement due to mask misalignment is prevented. The appearance of the structure at this stage in the process is shown in Figure 8.
  • the emitter was formed by diffusion out of the doped polycrystalline silicon layer 63. While this provides a self-aligned emitter 62 and therefore is advantageous, this approach to emitter formation results in a very shallow N conductivity type emitter, requiring a very shallow base. Such shallow bases are known to have a large base resistance. Furthermore, in the formation of self-aligned emitters from doped polycrystalline silicon, the presence of a very thin layer of silicon dioxide, commonly known as interface oxide, will be present on the upper surface of the epitaxial silicon beneath the polycrystalline silicon. This interface oxide increases the resistance of the emitter contact. In an alternative process of this invention, these disadvantages are overcome by doping the emitter using a two step process.
  • the emitter is doped using either an opening in layer 60 or a conventional masking operation.
  • a photoresist mask is deposited across the upper surface of the structure, an opening formed therein, and dopant introduced to define the emitter.
  • the mask is stripped and the second layer of polycrystalline silicon is deposited and doped to create a self-aligned emitter contact region.
  • the interface oxide resistance was sufficiently high as to require heating the structure to break down the interface. This is undesirable because heating a BiCMOS structure causes the dopants for the MOS transis­tors to move, making process control substantially more difficult.
  • This technique while described above in conjunction with formation of an emitter, can be employed whenever a polycrystalline or amorphous layer must make a low resistance connection to a silicon body.
  • boron/phosphorus-doped glass 65 BPSG
  • this glass comprises about 2-4% boron and about 5-7% phosphorus by weight.
  • the use of two different layers to form the isolation of the second polysilicon layer 63 for this step creates a layer which has a differential etch rate, and this acts as an etch stop.
  • the phosphorus rich doped glass has approximately a 9:1 etch selectivity over the undoped glass in a 10% hydrofluoric acid solutions As will be explained, this differential etch stop allows significant misalignment of contact locations yet prevents electrical shorts.
  • the doped glass 65 is "reflowed" by heating it in steam to about 920°C, resulting in a smoother upper layer, thereby allowing improved mask alignment and etch location positioning, as well as improved metal step coverage.
  • the surface may be etched back to any desired thickness. In the preferred embodiment, wet-­etching removes approximately 5000 Angstroms of glass. Alternatively, the wet- etching may be deferred until later in the process, or dry etching may be employed.
  • a reactive ion etch then is performed to etch completely through both the doped and undoped glass to form the contact opening, as shown in Figure 9A in greater detail. Then, either before or after removing the mask, using a 10:1 unbuffered hydrofluoric acid solution, the contact openings are further etched. The wet-etch essentially will stop after removal of the BPSG, leaving the undoped low temperature oxide in the manner shown in Figure 9B.
  • openings in the layer allow a connection to each of the N and P channel devices, as well as connections to each electrode of the bipolar transistor.
  • the openings have a smoothly-rounded profile at their upper extreme, tapering to a vertical wall at the location where the to-be-formed electrode connects to the underlying structure. This profile enables better step coverage for the to-be-formed overlying metal layer used to provide the electrical connection.
  • a first layer of metal 70 is sputtered across the upper surface of the structure and patterned, again using well known photo­lithographic techniques.
  • a thin layer of silicon dioxide 72 is deposited across the metal 70, and then a layer of glass 74 is spun on over the deposited silicon dioxide 72 to assist in planarizing the structure.
  • the appearance of the structure at this stage of the process is shown in Figure 10.
  • Excess glass 74 then is etched off to further planarize the structure, and a layer of intermetal oxide 76 deposited across the upper surface of the structure. Contact openings are etched in the intermetal oxide 76 and a second layer of metal 77 deposited. This second layer of metal 77 is patterned, again using conventional masking and etching techniques, and then the entire structure is coated with passivating material 80. The resulting structure is shown in Figure 11.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
EP89120847A 1988-11-14 1989-11-10 Prozess zur Herstellung von Bipolar- und CMOS-Transistoren auf einem gemeinsamen Substrat Ceased EP0369336A3 (de)

Applications Claiming Priority (2)

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US27092888A 1988-11-14 1988-11-14
US270928 1994-07-05

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EP0369336A2 true EP0369336A2 (de) 1990-05-23
EP0369336A3 EP0369336A3 (de) 1990-08-22

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EP (1) EP0369336A3 (de)
JP (1) JPH02211662A (de)
KR (1) KR0150195B1 (de)

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US5633196A (en) * 1994-05-31 1997-05-27 Sgs-Thomson Microelectronics, Inc. Method of forming a barrier and landing pad structure in an integrated circuit
US5719071A (en) * 1995-12-22 1998-02-17 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad sturcture in an integrated circuit
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Cited By (15)

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Publication number Priority date Publication date Assignee Title
EP0564136A1 (de) * 1992-03-31 1993-10-06 STMicroelectronics, Inc. Planarisierungsverfahren von einer integrierten Schaltung
US5914518A (en) * 1994-05-31 1999-06-22 Stmicroelectronics, Inc. Method of forming a metal contact to landing pad structure in an integrated circuit
US5956615A (en) * 1994-05-31 1999-09-21 Stmicroelectronics, Inc. Method of forming a metal contact to landing pad structure in an integrated circuit
US5702979A (en) * 1994-05-31 1997-12-30 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
US5633196A (en) * 1994-05-31 1997-05-27 Sgs-Thomson Microelectronics, Inc. Method of forming a barrier and landing pad structure in an integrated circuit
US5793111A (en) * 1994-05-31 1998-08-11 Sgs-Thomson Microelectronics, Inc. Barrier and landing pad structure in an integrated circuit
US5945738A (en) * 1994-05-31 1999-08-31 Stmicroelectronics, Inc. Dual landing pad structure in an integrated circuit
US5894160A (en) * 1994-05-31 1999-04-13 Stmicroelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
US5909636A (en) * 1994-12-22 1999-06-01 Stmicroelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
EP0718879A1 (de) * 1994-12-22 1996-06-26 STMicroelectronics, Inc. Verfahren zum Herstellen einer Kontaktfläche in einer integrierten Schaltung
US6093963A (en) * 1994-12-22 2000-07-25 Stmicroelectronics, Inc. Dual landing pad structure including dielectric pocket
USRE36938E (en) * 1994-12-22 2000-10-31 Stmicroelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
US5828130A (en) * 1995-12-22 1998-10-27 Stmicroelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
US5719071A (en) * 1995-12-22 1998-02-17 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad sturcture in an integrated circuit
US6025265A (en) * 1995-12-22 2000-02-15 Stmicroelectronics, Inc. Method of forming a landing pad structure in an integrated circuit

Also Published As

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JPH02211662A (ja) 1990-08-22
EP0369336A3 (de) 1990-08-22
US5554554A (en) 1996-09-10
KR0150195B1 (ko) 1998-10-01
KR900008670A (ko) 1990-06-03

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