EP0327157B1 - Kontaktwerkstoff und Verfahren zu dessen Herstellung - Google Patents

Kontaktwerkstoff und Verfahren zu dessen Herstellung Download PDF

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Publication number
EP0327157B1
EP0327157B1 EP89200156A EP89200156A EP0327157B1 EP 0327157 B1 EP0327157 B1 EP 0327157B1 EP 89200156 A EP89200156 A EP 89200156A EP 89200156 A EP89200156 A EP 89200156A EP 0327157 B1 EP0327157 B1 EP 0327157B1
Authority
EP
European Patent Office
Prior art keywords
layer
ions
range
contact material
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP89200156A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0327157A2 (de
EP0327157A3 (en
Inventor
Heinz Dr.Rer.Nat. Dimigen
Hubertus Hübsch
Klaus Dipl.-Ing. Kobs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Patentverwaltung GmbH
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH, Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Patentverwaltung GmbH
Publication of EP0327157A2 publication Critical patent/EP0327157A2/de
Publication of EP0327157A3 publication Critical patent/EP0327157A3/de
Application granted granted Critical
Publication of EP0327157B1 publication Critical patent/EP0327157B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/021—Composite material

Definitions

  • the invention relates to a contact material in the form of a layer with chalcogenides of transition metals of groups IVa to VIa of the Periodic Table of the Elements (PSE) on a substrate, a method for its production, its use for electrical contacts and an electrical contact.
  • PSE Periodic Table of the Elements
  • contact materials based on noble metals are preferably used for most contact systems.
  • the use and further development of contact materials are therefore primarily determined by the need for substitution of precious metals, which can be achieved by reducing the proportion of alloys, by geometrically minimizing the contact volume and by developing new contact materials that can do without precious metals.
  • contact materials based on high-melting metals such as tungsten, molybdenum and rhenium are used today, which are characterized not only by their high melting points, but also by high hardness and strength, which results in high wear and erosion resistance of the contacts made from them.
  • high-melting metals such as tungsten, molybdenum and rhenium
  • tungsten contacts can only be used to a limited extent with regard to their current carrying capacity due to the low electrical thermal conductivity, in addition, tungsten is unstable to oxygen above a temperature of 400 ° C and when switching in air, oxide foreign layers are formed which lead to an external layer resistance and thus to an increase of the contact resistance. Contact forces of at least 1 N are therefore required for reliable contacting, or frictional actuation of the contacts must be provided.
  • the starting semifinished product for tungsten contacts is produced by powder metallurgy by pressing and sintering powder, however, because of the low ductility and the high strength, the mechanical processing of tungsten is difficult.
  • molybdenum does not achieve the excellent contact properties of tungsten. However, it is preferred as a cheaper metal for those cases that do not necessarily require the use of tungsten.
  • a self-lubricating contact structure which consists of a highly conductive substrate and a self-lubricating contact surface.
  • the contact surface is a composite material made from a highly conductive, metallic component and a solid, lubricating component.
  • the solid, lubricating component is preferably selected from the group consisting of silver, alloys based on silver, and copper and alloys based on copper.
  • the solid, lubricating component is preferably selected from the groups consisting of graphite, molybdenum sulfide, niobium disulfide, niobium diselenide, tantalum disulfide and titanium ditelluride.
  • the contact surface had the compositions 92.8% Ag, 7.2% MoS2 or 95.6% Ag, 4.4% MoS2 or 97.7% Ag, 2.3% MoS2.
  • the composite material is produced by plasma spraying the components or a component mixture.
  • This composite material has the disadvantage that the self-lubricating component is very poorly conductive and that it is relatively expensive.
  • Plasma spraying as a production process for the above composites has the disadvantage that the ratio of the two components in the sprayed layers can only be obtained with difficulty and in a reproducible manner.
  • EP-A-074630 discloses substrate / cover layer combinations in which the substrate can consist of a transition metal from group IVa to VIa of the PSE and the cover layer consists of the associated sulfide or selenide. These layer materials are produced by in-situ reaction of the substrate metal with a chalcogen-containing phase. However, there are no indications of a modification of the structure of the cover layers to improve the electrical conductivity. There is also no indication of the need to improve conductivity.
  • US-A-3482202 discloses contacts with any substrate and a self-lubricating contact layer, which is a composite of a highly conductive metallic components and a solid lubricating component.
  • the highly conductive metallic component is preferably selected from the group consisting of silver, silver alloys, copper and copper alloys.
  • the solid, lubricating component is preferably selected from the group consisting of graphite, molybdenum disulfide, niobium disulfide, niobium diselenide, tantalum disulfide, titanium ditelluride.
  • This citation is considered to be the closest prior art because it discloses contact layers of various chalcogenides from transition metals of group IVa to Vb on any substrate and this citation already has the task of providing contact materials which, in addition to very low sliding friction coefficients, also have relatively low values for have the contact resistance.
  • GB-A-2056177 discloses a method for producing contact materials based on binary and ternary alloys of Cu, W, Mo, Ag, Cr, Ge, etc. Preferably copper alloys are used. Alloy formation takes place by ion implantation of known alloy materials such as Cr, Fe, Zr, Ti, V, Ge, Co, Si, Ni, Ta, W, Mo and their combinations. Here too, however, the electrical resistance of the original layers is increased by the ion implantation and only because the ion implantation enables the formation of very thin alloy layers on the copper does the conductivity of the copper have little effect. According to page 1 line 27 to page 2 line 1 is the use of material with lubricating properties expressly excluded.
  • chalcogenides of the transition metals from subgroups IVa to VIa are particularly suitable as contact materials, nor that the structure of layers produced from these chalcogenides can be modified by particle bombardment in order to reduce the contact resistance by several orders of magnitude.
  • the invention has for its object to provide contact materials with chalcogenides of transition metals of groups IVa to VIa of the PSE, from which thin and thick film contacts of any configuration can be produced in an economical manner, which do not have the disadvantages mentioned above and which have the particular advantage that they combine low contact resistances with very low sliding friction coefficients.
  • This object is achieved in that the structure of the layer is modified by particle bombardment.
  • the chalcogenides are titanium, Zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and / or tungsten, formed from the chalcogens sulfur, selenium and / or tellurium, advantageously with ions of an implantation energy in the range of 0.5 keV to 400 keV in the chalcogenide layer and a dose in the range of 1015 to nx 1018 / cm2 are implanted.
  • inert gas ions preferably nitrogen ions, or noble gas ions, preferably argon ions, are implanted in the chalcogenide layer.
  • a method for producing a contact material in the form of a layer of chalcogenides of transition metals from groups IVa to VIa of the Periodic Table of the Elements (PSE) deposited on a substrate by chemical or physical vapor deposition is characterized in that the structure of the layer is modified by particle bombardment .
  • Layers of chalcogenides of transition metals have very low sliding friction coefficients, but have a relatively high contact resistance R K , so that they are not very suitable as a contact material. Surprisingly, however, it has been found that the values for the contact resistance R K can be reduced by up to three orders of magnitude if the structure of the chalcogenide layers is modified during or after application to a substrate, which is advantageously achieved by particle bombardment, preferably by ion implantation can be.
  • This effect is not based on doping the layer material with foreign ions, as it is e.g. is known from semiconductor technology.
  • the reduction in the contact resistance of the layers according to the invention also results from bombardment with ions from elements which are generally not used for doping purposes, e.g. Noble gas or inert gas ions. It can be assumed that the improvement in the electrical conductivity or the reduction in the contact resistance of chalcogenide layers is a result of structural changes in the layers after particle bombardment. After bombardment with e.g. high-energy ions were found in studies on layers produced in the context of the present invention, an increase in the density of the layers by up to 40%.
  • the particle bombardment is carried out while the layer is being applied.
  • layers of greater thickness preferably a layer thickness in the range from 0.1 to 10 ⁇ m
  • layers of greater thickness can also be modified in their structure, for which purpose advantageously low-energy ions with an implantation energy in the range from 0.5 keV to 100 keV and a dose in the range of 1015 to nx 1018 / cm2, preferably a dose in the range of 3 x 1015 to 1016 / cm2, are used.
  • the particle bombardment is carried out after the layer has been applied.
  • This method is particularly suitable if layers of smaller thickness, preferably in the range from a monolayer to 2 ⁇ m, are to be modified in their structure.
  • inert gas ions preferably nitrogen ions, or noble gas ions, preferably argon ions, are implanted in the chalcogenide layer.
  • the chalcogenide layer is produced by sputtering, the deposition process advantageously being supported by a magnetic field, that is to say using a magnetron.
  • the chalcogenide layers can also be deposited using other methods known for the deposition of thin or thick layers.
  • chemical vapor deposition such as plasma-assisted deposition from the gas phase, reactive cathode sputtering, plasma-assisted deposition from the gas phase, vapor deposition processes, ion plating processes with a high bias on the substrate or ionization are to be considered here of the layer material to be deposited in the arc, optionally in a reactive gas phase from, for example Hydrogen sulfide gas or sulfur in the gas phase.
  • contact materials are provided which do not require any precious metals, from which contacts of any configuration can be made in an economically advantageous manner can be produced and which have particularly low sliding friction coefficients, even in a vacuum, which is very favorable for the production of, for example, contacts which are to be exposed to mechanical sliding or grinding stress.
  • a particular advantage of the contact materials according to the invention and the contact layers produced from them is that their contact resistance is undesirably increased less than in the case of contacts made of pure base metals due to an external layer resistance due to the formation of foreign or cover layers due to, for example, oxidizing action of the surrounding medium.
  • the layers according to the invention show a particularly good adhesive strength on steel substrates; intermediate layers that improve adhesion are not necessary here.
  • a further significant advantage from an economic point of view is that both the cathode sputtering process, which is preferably provided for the production of the chalcogenide layers, and the ion implantation process, which is preferably provided for the structural change of the chalcogenide layers, can be carried out with commercially available machines.
  • chalcogenides of the transition metals titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and / or tungsten can be considered, which need not be stoichiometric chalcogenides.
  • the layers obtained were bombarded with argon or nitrogen ions using a high-current ion implantation system:
  • argon or nitrogen ions e.g. silicon or hydrogen ions can also be implanted in the chalcogenide layers.
  • the implantation parameters can be determined without difficulty by the person skilled in the art in the context of the present method.
  • the table below shows the values for the coefficient of friction »and the values for the contact resistance R K before and after ion implantation for different chalcogenide layers.
  • the values for the respective contact resistance were measured using a gold counter electrode.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Contacts (AREA)
  • Manufacture Of Switches (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
EP89200156A 1988-02-01 1989-01-25 Kontaktwerkstoff und Verfahren zu dessen Herstellung Expired - Lifetime EP0327157B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3802869 1988-02-01
DE3802869A DE3802869A1 (de) 1988-02-01 1988-02-01 Kontaktwerkstoff auf basis von uebergangsmetallen

Publications (3)

Publication Number Publication Date
EP0327157A2 EP0327157A2 (de) 1989-08-09
EP0327157A3 EP0327157A3 (en) 1990-12-05
EP0327157B1 true EP0327157B1 (de) 1994-07-06

Family

ID=6346371

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89200156A Expired - Lifetime EP0327157B1 (de) 1988-02-01 1989-01-25 Kontaktwerkstoff und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
EP (1) EP0327157B1 (enrdf_load_stackoverflow)
JP (1) JPH01232614A (enrdf_load_stackoverflow)
AT (1) ATE108282T1 (enrdf_load_stackoverflow)
DE (2) DE3802869A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2459303C1 (ru) * 2011-02-03 2012-08-20 Открытое акционерное общество "Рязанский завод металлокерамических приборов" (ОАО "РЗМКП") Способ изготовления магнитоуправляемого герметизированного контакта

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482202A (en) * 1967-03-15 1969-12-02 Westinghouse Electric Corp Electrical apparatus and self-lubricating contact
NL7905720A (nl) * 1979-07-24 1981-01-27 Hazemeijer Bv Werkwijze voor het verbeteren van schakelkontakten, in het bijzonder voor vakuumschakelaars.
EP0088123A4 (en) * 1981-09-11 1985-10-01 Western Electric Co CONTAINING APPARATUS ELECTRICAL CONTACTS.

Also Published As

Publication number Publication date
DE58907989D1 (de) 1994-08-11
ATE108282T1 (de) 1994-07-15
DE3802869A1 (de) 1989-08-10
DE3802869C2 (enrdf_load_stackoverflow) 1991-02-14
EP0327157A2 (de) 1989-08-09
JPH01232614A (ja) 1989-09-18
EP0327157A3 (en) 1990-12-05

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