EP0300807A2 - Elément électrophotographique photosensible - Google Patents

Elément électrophotographique photosensible Download PDF

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Publication number
EP0300807A2
EP0300807A2 EP88306746A EP88306746A EP0300807A2 EP 0300807 A2 EP0300807 A2 EP 0300807A2 EP 88306746 A EP88306746 A EP 88306746A EP 88306746 A EP88306746 A EP 88306746A EP 0300807 A2 EP0300807 A2 EP 0300807A2
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EP
European Patent Office
Prior art keywords
layer
blocking layer
photosensitive member
charge injection
sih4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP88306746A
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German (de)
English (en)
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EP0300807A3 (fr
Inventor
Masatoshi Wakagi
Shigeharu Onuma
Fuminori Ishikawa
Toshiyuki Ohno
Kunihiro Tamahashi
Mitsuo Chigasaki
Yasuo Shimamura
Chiaki Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
Hitachi Ltd
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Publication of EP0300807A2 publication Critical patent/EP0300807A2/fr
Publication of EP0300807A3 publication Critical patent/EP0300807A3/fr
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers

Definitions

  • This invention relates to an electro­photographic photosensitive member, and particularly to an electrophotographic photosensitive member with excellent electrostatic charge acceptance for laser printers.
  • the conventional electrophotographic photosensitive member has a basic structure of a photoconductive layer and a surface protective layer, successively laid one upon another on an electro­conductive support, where inorganic photoconductive materials such as Se, CdS, As2Se3, etc. or organic photoconductive materials such as PVC z -TNF, etc. have been used in the photoconductive layer. These inorganic and organic photoconductive materials are not always satisfactory in heat resistance and durability.
  • amorphous Si containing hydrogen which will be hereinafter abbreviated to a-Si:H, has been proposed as a photoconductive material and has excellent heat resistance and a high hardness, and thus has excellent durability, but the volume resistivity of ordinary a-Si:H film is as low as about 1010 ⁇ cm, which is too low to obtain a satis­factory electrostatic charge acceptance.
  • the surface protective layer provided on the surface of the photoconductive layer is a layer of high volume resistivity, which is directed to an increase in the moisture resistance and corona resistance as well as to a prevention of charge injection from the surface of the photosensitive member.
  • the thickness of the surface protective layer is increased to improve the electrostatic charging characteristics of the photosensitive member such as an electrostatic charge acceptance, dark decay, etc., the residual potential after light exposure will be increased.
  • the thickness of the surface protective layer must take such a value as to satisfy the electrostatic charge acceptance and the dark decay as well as the residual potential.
  • the surface protective layer is in a double layer structure, that is, a moisture and corona-resistant layer as an upper layer and a charge injection blocking layer as a lower layer in order to increase the moisture resistance and corona resistance of the surface protective layer.
  • the electrostatic charge acceptance and the dark decay, and the residual potential cannot be readily balanced owing to the influence of the charge injection blocking layer.
  • An electrophotographic photosensitive member comprising a photoconductive layer of a-Si:H:B (4 ppm) of intrinsic conduction, a charge injection blocking layer of a-Si:H:B (100 ppm) of p-type conduction, and a moisture and corona-resistant layer of a-SiN, laid one upon another on an aluminum support is disclosed in J. Appl. Phys. Vol. 55, No.
  • An object of the present invention is to provide an electrophotographic photosensitive member with excellent electrostatic charging characteristics, where the electrostatic charge acceptance and dark decay are increased, while suppressing a residual potential increase.
  • the present invention provides an electrolyphotographic photosensitive member, which comprises an electroconductive support, a photoconductive layer made from hydrogen-containing amorphous silicon as a matrix, a charge injection blocking layer having a different conduction type from that of the photo­conductive layer and having a broader optical band gap than that of the photoconductive layer, and a moisture and corona-resistant layer, laid one upon another successively on the electroconductive support.
  • Different conduction type of the charge injection blocking layer from that of the photo­conductive layer means that when the photoconductive layer is of p-type, the charge injection blocking layer is of n-type or intrinsic type, and when the photoconductive layer is of n-type, the charge injection blocking layer is of p-type or intrinsic type.
  • the charge injection blocking layer provided on the photoconductive layer has a high mobility of charges with a reversed polarity to the polarity of the charges on the surface of the photosensitive member.
  • the charge injection blocking layer has a low mobility of such charges. That is, the charge injection blocking layer has a function to block the charges with the same polarity as that of charges on the surface of the photosensitive member.
  • the charge injection blocking layer on the photoconductive layer must be of n-type, whereas, when the surface of the photosensitive member is minus (-) charged, the charge injection blocking layer must be of p-type.
  • the photoconductive layer is of p-type in case of plus (+) charging, and of n-type in case of minus (-) charging, and thus the charge injection blocking layer provided on the photoconductive layer must have a different conductivity type from that of the photoconductive layer. That is, when the photoconductive layer is of p-type, the charge injection blocking layer provided thereon must have a conductivity type of n-type or intrinsic type, and when the photoconductive layer is of n-type, the charge injection blocking layer provided thereon must have a conductivity type of p-type or intrinsic type.
  • the charge injection blocking layer provided on the photoconductive layer must be of n-type in case of plus (+) charging and of p-type in case of minus (-) charging.
  • the charge injection blocking layer provided on the photoconductive layer must have a broader optical band gap than that of the photo­conductive layer.
  • the charge injection blocking layer provided on the photoconductive layer must be a film capable of controlling the p-n conduction type and having a broader optical band gap.
  • a film of hydrogen-containing amorphous SiC (a-SiC:H) is preferable as the charge injection blocking layer.
  • the a-SiC:H film has a broader band gap, i.e. 1.9 eV - 2.0 eV, than those of a-Si:H (optical band gap: 1.8 eV) or a-SiGe:H (hydrogen-containing amorphous SiGe; optical band gap: 1.5 eV), used as the photoconductive layer.
  • the a-SiC:H film is of n-type, when not doped with an impurity such as B, and has a high electron mobility, but the hole mobility is not so high.
  • the film when doped with a small amount of boron, has a high hole mobility, but the electron mobility is decreased, and the conduction type of the film turns from n-type to p-type through the intrinsic type. That is, the conduction type of the electron injection blocking layer can be changed from the n-type to the p-type through the intrinsic type by doping with B.
  • the electron mobility of the film is increased; i.e. the n-type conduction of the film increases.
  • a-SiC:X:H film where X is a halogen atom, (halogen and hydrogen containing amorphous SiC; optical band gap: 1.9 eV - 2.0 eV) or a-SiN:X:H film, where X is a halogen atom (halogen and hydrogen containing amorphous SiN; optical band gap: 1.9 eV or more) can be used in place of the a-SiC:H film as the charge injection blocking layer provided on the photoconductive layer.
  • the effect of halogen atom is an increase in the durability, that is, less susceptibility to optical fatigue.
  • a charge injection blocking layer having a different conduction type from that of a photoconductive layer on the photoconductive layer By providing a charge injection blocking layer having a different conduction type from that of a photoconductive layer on the photoconductive layer, injection of charges from the surface of the photosensitive member can be suppressed, and the charges can be readily transferred from the photo­ conductive layer, and thus an electrophotographic photosensitive member with a lower residual potential and better dark decay and charge acceptance can be obtained.
  • a charge injection blocking layer having a broader optical band gap than that of the photoconductive layer the photoconductive layer can be thoroughly irradiated with light, and a higher photosensitivity can be obtained.
  • an a-SiC:H film having a higher carbon content or an a-C film is desirably provided as a moisture and corona-­resistant layer on the surface of the charge injection blocking layer.
  • a charge blocking layer can be provided between the support and the photoconductive layer.
  • the charge blocking layer can be made of the same material as used in the charge injection blocking layer.
  • Films of the charge blocking layer, photo­conductive layer, charge injection blocking layers and the moisture and corona blocking layer can be formed on the electroconductive support one upon another successively by CVD including plasma CVD, photo CVD, thermal CVD and ECR microwave CVD, by sputtering or by vapor deposition, and the individual films can be also formed by any combination of these forming procedures.
  • CVD including plasma CVD, photo CVD, thermal CVD and ECR microwave CVD, by sputtering or by vapor deposition, and the individual films can be also formed by any combination of these forming procedures.
  • the individual layers desirably have a thickness as given below:
  • the charge blocking layer 0.5 - 3 ⁇ m
  • the photoconductive layer 20 - 50 ⁇ m
  • the charge injection blocking layer 0.5 - 3 ⁇ m
  • the moisture and corona-resistant layer 0.2 - 1 ⁇ m
  • the photoconductive layer can be of a double structure of different materials, i.e. a lower photoconductive layer of e.g. a-Si:H film and an upper photoconductive layer of e.g. a-SiGe:H film.
  • An electrophotographic photosensitive member having a cross-sectional profile as shown in Fig. 1 was prepared.
  • a gas mixture of SiH4, H2 and B2H6 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, SiH4/(SiH4 + H2), of 0.6 and a gas ratio, B2H6/SiH4, of 3x10 ⁇ 6.
  • the aluminum drum 1 was kept at 250°C, and an a-Si:H film was formed to a thickness of 20 ⁇ m as a lower photo­conductive layer 3 on the charge blocking layer 2 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • a gas mixture of SiH4, GeH4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + GeH4)/(H2 + SiH4 + GeH4), of 0.6 and a gas ratio, GeH4/(SiH4 + GeH4), of 0.2.
  • B2H6 was introduced thereto to make a gas ratio, B2H6/(SiH4 + GeH2), of 1x10 ⁇ 6.
  • the aluminum drum 1 was kept at 250°C, and an a-SiGe:H film was formed to a thickness of 1 ⁇ m as an upper photoconductive layer 4 on the lower photoconductive layer 3 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.5 eV; conduction type: p-type).
  • a gas mixture of SiH4, C2H4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.05, and an a-SiC:H film was formed to a thickness of 0 to 3 ⁇ m as a charge injection blocking layer 5 on the upper photoconductive layer 4 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.9 eV; conduction type: n-type).
  • the same gas mixture as used in forming the charge injection blocking layer 5 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.6, and an a-SiC:H film was formed to a thickness of 0.4 ⁇ m as a moisture and corona-resistant layer 6 on the charge injection blocking layer 5 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • a relationship between the thickness of the charge injection blocking layer 5 ( ⁇ m) on the abscissa and the dark decay (3-second value) of the photosensitive member on the ordinate is shown.
  • the dark decay can be improved.
  • Better electrostatic charge acceptance and the residual potential of the photosensitive member can be also obtained thereby, as shown in Fig. 3.
  • An electrophotographic photosensitive member having a cross-sectional profile as shown in Fig. 4 was prepared.
  • An aluminum drum whose outer surface was polished to the mirror surface degree was fixed as an electroconductive support 1 in a vacuum chamber, which was evacuated to about 1x10 ⁇ 6 Torr. Then, a gas mixture of monosilane (SiH4), ethylene (C2H4) and hydrogen (H2) was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/­(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/­ (SiH4 + C2H4), of 0.05. Diborane (B2H6) was introduced thereto to make a gas ratio, B2H6/(SiH4 + C2H4), of 1x10 ⁇ 4.
  • the aluminum drum 1 was kept at 250°C and an a-SiC:H film was formed to a thickness of 1 ⁇ m as a charge blocking layer 2 on the aluminum drum 1 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • the gas ratio, B2H6/(SiH4 + C2H4) was changed to 3 x 10 ⁇ 6, and an a-SiC:H film was formed to a thickness of 20 ⁇ m as a lower photo­conductive layer 7 on the charge blocking layer 2 under the same high frequency glow discharge conditions as above.
  • a gas mixture of SiH4, GeH4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + GeH4)/(H2 + SiH4 +GeH4), of 0.6 and a gas ratio, GeH4/(SiH4 + GeH4), of 0.2.
  • B2H6 was introduced thereto to make a gas ratio, B2H6/(SiH4 + GeH4), of 1x10 ⁇ 6.
  • the aluminum drum 1 was kept at 250°C, and an a-SiGe:H film was formed to a thickness of 1 ⁇ m as an upper photoconductive layer 4 on the lower photoconductive layer 7 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.5 eV; conduction type: p-type).
  • a gas mixture of SiH4, C2H4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/­ (H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/­(SiH4 + C2H4) of 0.05, and an a-SiC:H film was formed to a thickness of 0 to 3 ⁇ m as a charge injection blocking layer 5 on the upper photoconductive layer 4 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.9 eV; conduction type: n-type).
  • the same gas mixture as used in forming the charge injection blocking layer 5 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.6 and an a-SiC:H film was formed to a thickness of 0.4 ⁇ m as a moisture and corona-resistant layer 6 on the charge injection blocking layer 5 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • Fig. 5 a relationship between the thickness of the charge injection blocking layer 5 ( ⁇ m) on the abscissa and the dark decay (3-second value) of the photosensitive member on the ordinate is shown.
  • the dark decay can be improved.
  • Better electrostatic charge acceptance and the residual potential of the photosensitive member can be also obtained thereby, as shown in Fig. 6.
  • An electrophotographic photosensitive member having a cross-sectional profile as shown in Fig. 7 was prepared.
  • An aluminum drum whose outer surface was polished to the mirror surface degree was fixed as an electroconductive support 1 in a vacuum chamber, which was evacuated to about 1x10 ⁇ 6 Torr. Then, a gas mixture of monosilane (SiH4), ethylene (C2H4) and hydrogen (H2) was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.05. Diborane (B2H6) was introduced thereto to make a gas ratio, B2H6/(SiH4 + C2H4) of 1x10 ⁇ 4.
  • the aluminum drum 1 was kept at 250°C and and a-SiC:H film was formed to a thickness of 1 ⁇ m as a charge blocking layer 2 on the aluminum drum 1 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • a gas mixture of SiH4, H2 and B2H6 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, SiH4/(SiH4 + H2), of 0.6 and a gas ratio, B2H6/SiH4, of 3x10 ⁇ 6.
  • the aluminum drum 1 was kept at 250°C, and an a-Si:H film was formed to a thickness of 20 ⁇ m as a photo­conductive layer 3 on the charge blocking layer 2 by high frequency glow discharge at 13.56 MHz and a power of 300 W. (optical band gap: 1.8 eV; conduction type: p-type).
  • a gas mixture of SiH4, C2H4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.05, and an a-Sic:H film was formed to a thickness of 0.5 to 2 ⁇ m as a charge injection blocking layer 5 on the photoconductive layer 3 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.9 eV; conduction type: n-type)
  • the same gas mixture as used in forming the charge injection blocking layer 5 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.6, and an a-SiC:H film was formed to a thickness of 0.4 ⁇ m as a moisture and corona-resistant layer 6 on the charge injection blocking layer 5 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • the thus prepared photosensitive member has a good electrostatic charge acceptance as in Examples 1 and 2.
  • An electrophotographic photosensitive member having a cross-sectional profile as shown in Fig. 7 was prepared.
  • An aluminum drum whose outer surface was polished to the mirror surface degree was fixed as an electroconductive support 1 in a vacuum chamber, which was evacuated to about 1x10 ⁇ 6 Torr. Then, a gas mixture of monosilane (SiH4), ethylene (C2H4) and hydrogen (H2) was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.05. Phosphine (PH3) was introduced thereto to make a gas ratio, PH3/­(SiH4 + C2H4) of 1x10 ⁇ 4.
  • the aluminum drum 1 was kept at 250°C and an a-SiC:H film was formed to a thickness of 1 ⁇ m as a charge blocking layer 2 on the aluminum drum 1 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • a gas mixture of SiH4, H2 and B2H6 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, SiH4/(SiH4 + H2), of 0.6 and a gas ratio, B2H6/SiH4, of 0.5x10 ⁇ 6.
  • the aluminum drum 1 was kept at 250°C, and an a-Si:H film was formed to a thickness of 20 ⁇ m as a photo­conductive layer 3 on the charge blocking layer 2 by high frequency glow discharge at 13.56 MHz and a power of 300 W. (optical band gap; 1.8 eV; conduction type: n-type).
  • a gas mixture of SiH4 + C2H4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/­(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/­ (SiH4 + C2H4), of 0.05.
  • Diborane (B2H6) was introduced thereto to make a gas ratio, B2H6/­(SiH4 + C2H4), of 3 x 10 ⁇ 6, and an a-SiC:H film was formed to a thickness of 0.5 to 2 ⁇ m as a charge injection blocking layer 5 on the photoconductive layer 3 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.9 eV; conduction type: p-type).
  • the same gas mixture as used in forming the charge injection blocking layer 5 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.6, and an a-SiC:H film was formed to a thickness of 0.4 ⁇ m as a moisture and corona-resistant layer 6 on the charge injection blocking layer 5 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • the thus prepared photosensitive member has a good electrostatic charge acceptance as in Examples 1 and 2.
  • An electrophotographic photosensitive member having a cross-sectional profile as shown in Fig. 1 was prepared.
  • An aluminum drum whose outer surface was polished to the nirror surface degree was fixed as an electroconductive support 1 in a vacuum chamber, which was evacuated to about 1x10 ⁇ 6 Torr. Then, a gas mixture of monosilane (SiH4), ethylene (C2H4) and hydrogen (H2) was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/­(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/­(SiH4 + C2H4), of 0.05. Phosphine (PH3) was introduced thereto to make a gas ratio, PH3/(SiH4 + C2H4) of 1x10 ⁇ 4.
  • the aluminum drum 1 was kept at 250°C and an a-SiC:H film was formed to a thickness of 1 ⁇ m as a charge blocking layer 2 on the aluminum drum 1 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • a gas mixture of SiH4, H2 and B2H6 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, SiH4/(SiH4 + H2), of 0.6 and a gas ratio, B2H6/SiH4, of 0.5x10 ⁇ 6.
  • the aluminum drum 1 was kept at 250°C, and an a-Si:H film was formed to a thickness of 20 ⁇ m as a lower photo­conductive layer 3 on the charge blocking layer 2 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • a gas mixture of SiH4, GeH4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + GeH4)/(H2 + SiH4 + GeH4), of 0.6 and a gas ratio, GeH4/(SiH4 + GeH4), of 0.2.
  • the aluminum drum 1 was kept at 250°C, and an a-SiGe:H film was formed to a thickness of 1 ⁇ m as an upper photoconductive layer 4 on the lower photoconductive layer 3 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.5 eV; conduction type: n-type).
  • a gas mixture of SiH4, C2H4 and H2 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.05.
  • Diborane (B2H6) was introduced thereto to make a gas ratio, B2H6/(SiH4 + C2H4) of 3 x 10 ⁇ 6, and an a-SiC:H film was formed to a thickness of 0.5 to 2 ⁇ m as a charge injection blocking layer 5 on the upper photoconductive layer 4 by high frequency glow discharge at 13.56 MHz and a power of 300 W (optical band gap: 1.9 eV; conduction type: p-type).
  • the same gas mixture as used in forming the charge injection blocking layer 5 was introduced at a pressure of 0.5 Torr into the vacuum chamber in a gas ratio, (SiH4 + C2H4)/(H2 + SiH4 + C2H4), of 0.6 and a gas ratio, C2H4/(SiH4 + C2H4), of 0.6, and an a-SiC:H film was formed to a thickness of 0.4 ⁇ m as a moisture and corona-resistant layer 6 on the charge injection blocking layer 5 by high frequency glow discharge at 13.56 MHz and a power of 300 W.
  • the thus prepared photosensitive member had a good electrostatic charge acceptance as in Example 1.
  • an electrophotographic photosensitive member with excellent electrostatic charge acceptance and photosensitivity can be provided by providing on a photoconductive layer a charge injection blocking layer having a different conduction type and a broader band gap from and than those of the photoconductive layer.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
EP88306746A 1987-07-24 1988-07-22 Elément électrophotographique photosensible Withdrawn EP0300807A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18348087A JPS6428654A (en) 1987-07-24 1987-07-24 Electrophotographic sensitive body
JP183480/87 1987-07-24

Publications (2)

Publication Number Publication Date
EP0300807A2 true EP0300807A2 (fr) 1989-01-25
EP0300807A3 EP0300807A3 (fr) 1990-08-01

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EP88306746A Withdrawn EP0300807A3 (fr) 1987-07-24 1988-07-22 Elément électrophotographique photosensible

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0764887A2 (fr) * 1995-08-23 1997-03-26 Canon Kabushiki Kaisha Elément photosensible
EP0809153A2 (fr) * 1996-05-23 1997-11-26 Canon Kabushiki Kaisha Elément photorécepteur
US5737671A (en) * 1993-10-25 1998-04-07 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor and an image forming method using the same
US8969711B1 (en) * 2011-04-07 2015-03-03 Magnolia Solar, Inc. Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
EP0176936A1 (fr) * 1984-09-27 1986-04-09 Kabushiki Kaisha Toshiba Elément photosensible électrophotographique
JPS61223752A (ja) * 1985-03-28 1986-10-04 Kobe Steel Ltd 電子写真用感光体

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FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
EP0176936A1 (fr) * 1984-09-27 1986-04-09 Kabushiki Kaisha Toshiba Elément photosensible électrophotographique
JPS61223752A (ja) * 1985-03-28 1986-10-04 Kobe Steel Ltd 電子写真用感光体

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Title
PATENT ABSTRACTS OF JAPAN vol. 11, no. 58 (P-550)(2505) 21 February 1987, & JP-A-61 223 752 (KOBE STEEL LTD) 04 October 1986, *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737671A (en) * 1993-10-25 1998-04-07 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor and an image forming method using the same
EP0764887A2 (fr) * 1995-08-23 1997-03-26 Canon Kabushiki Kaisha Elément photosensible
EP0764887A3 (fr) * 1995-08-23 1997-08-27 Canon Kk Elément photosensible
US5738963A (en) * 1995-08-23 1998-04-14 Canon Kabushiki Kaisha Light-receiving member for electrophotography having a photoconductive layer composed of a first layer region and a second layer region having different energy bandgaps and characteristic energies
EP0809153A2 (fr) * 1996-05-23 1997-11-26 Canon Kabushiki Kaisha Elément photorécepteur
EP0809153A3 (fr) * 1996-05-23 1998-10-21 Canon Kabushiki Kaisha Elément photorécepteur
US8969711B1 (en) * 2011-04-07 2015-03-03 Magnolia Solar, Inc. Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same
US9947824B1 (en) 2011-04-07 2018-04-17 Magnolia Solar, Inc. Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same

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JPS6428654A (en) 1989-01-31

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