EP0290692B1 - Heizapparat für Halbleiter-Wafer - Google Patents

Heizapparat für Halbleiter-Wafer Download PDF

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Publication number
EP0290692B1
EP0290692B1 EP19870304297 EP87304297A EP0290692B1 EP 0290692 B1 EP0290692 B1 EP 0290692B1 EP 19870304297 EP19870304297 EP 19870304297 EP 87304297 A EP87304297 A EP 87304297A EP 0290692 B1 EP0290692 B1 EP 0290692B1
Authority
EP
European Patent Office
Prior art keywords
lamps
array
wafer
group
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP19870304297
Other languages
English (en)
French (fr)
Other versions
EP0290692A1 (de
Inventor
Anita S. Gat
Eugene R. Westerberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AG Processing Technologies Inc
Original Assignee
AG Processing Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US06/760,160 priority Critical patent/US4680451A/en
Application filed by AG Processing Technologies Inc filed Critical AG Processing Technologies Inc
Priority to EP19870304297 priority patent/EP0290692B1/de
Priority to DE19873787367 priority patent/DE3787367T2/de
Publication of EP0290692A1 publication Critical patent/EP0290692A1/de
Application granted granted Critical
Publication of EP0290692B1 publication Critical patent/EP0290692B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0093—Maintaining a temperature gradient

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)

Claims (11)

  1. Heizapparat für Halbleiter-Wafer mit einer ersten Anordnung (30) von Lampen (1 bis 10), einer zweiten Anordnung (32) von Lampen (11 bis 20), die in Abstand von der ersten Anordnung angeordnet ist, um einen Halbleiter-Wafer (40) dazwischen anordnen zu können, einer Lampengruppen (z.B. 3 und 8) in der ersten Anordnung (30) elektrisch verbindenden Einrichtung und einer Lampengruppen (z.B. 13 und 18) in der zweiten Anordnung (32) elektrisch verbindenden Einrichtung,
       dadurch gekennzeichnet,
       daß jede Gruppe Lampen enthält, die im gleichen Abstand von den jeweiligen Enden der Anordnung, von der sie einen Teil bilden, angeordnet sind; und
       daß jede Lampengruppe (z.B 3 und 8) in der ersten Anordnung (30) elektrisch mit einer Lampengruppe (z.B. 13 and 18) in der zweiten Anordnung (32) verbunden ist, so daß die verbundenen Lampengruppen (z.B. 3 und 8; 13 und 18) gleichzeitig und in gleicher Weise erregt werden.
  2. Heizapparat nach Anspruch 1, dadurch gekennzeichnet, daß die Lampen (1 bis 10; 11 bis 20) in jeder Menge (30; 32) längs gestreckt und parallel sind, wobei die Lampen einer Menge schräg zu den Lampen der anderen Menge verlaufen.
  3. Heizapparat nach Anspruch 2, dadurch gekennzeichnet, daß die Lampen (1 bis 10) der ersten Menge (30) senkrecht zu den Lampen (11 bis 20) der zweiten Menge (32) angeordnet sind.
  4. Heizapparat nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Lampen (3 und 8; 13 und 18) in jeder Gruppe parallel geschaltet sind.
  5. Heizapparat nach Anspruch 4, dadurch gekennzeichnet, daß die Lampen (3, 8, 13, 18) in den verbundenen Gruppen parallel geschaltet sind.
  6. Heizapparat nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß jede Lampengruppe (3 und 8; 13 und 18) aus zwei Lampen besteht.
  7. Heizapparat nach einem der vorstehenden Ansprüche, gekennzeichnet durch eine Steuereinrichtung zum Steuern der Energieversorgung der verbundenen Lampengruppen, wobei eine gewünschte Temperatur beim Heizen eines Wafers (40) zwischen der ersten Menge (30) von Lampen (1 bis 10) und der zweiten Menge (32) von Lampen (11 bis 20) aufrechterhalten wird.
  8. Heizapparat nach Anspruch 7, dadurch gekennnzeichnet, daß die Steuereinrichtung einer Spannungsquelle und eine Modulationseinrichtung zum Modulieren der an die verbundenen Lampengruppen angelegten Spannung aufweist.
  9. Heizapparat nach Anspruch 8, dadurch gekennzeichnet, daß die Modulationseinrichtung in Übereinstimmung mit einem vorstabilisierten Stromzyklus der verbundenen Lampengruppen gesteuert wird.
  10. Heizapparat nach Anspruch 8 oder 9, gekennzeichnet durch eine Temperaturfühler-Einrichtung (38) zum Aufnehmen der Temperatur eines Wafers (40) und eine computergesteuerte Einrichtung (50) zur Steuerung der Modulationseinrichtung in Abhängigkeit von der aufgenommenen Temperatur.
  11. Heizapparat nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Lampen in jeder Lampengruppe unterschiedliche Dauerleistungen bei einer angelegten Spannung aufweisen, um einen gewünschten Temperaturgradienten zu herzustellen.
EP19870304297 1985-07-29 1987-05-14 Heizapparat für Halbleiter-Wafer Expired - Lifetime EP0290692B1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US06/760,160 US4680451A (en) 1985-07-29 1985-07-29 Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers
EP19870304297 EP0290692B1 (de) 1987-05-14 1987-05-14 Heizapparat für Halbleiter-Wafer
DE19873787367 DE3787367T2 (de) 1987-05-14 1987-05-14 Heizapparat für Halbleiter-Wafer.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19870304297 EP0290692B1 (de) 1987-05-14 1987-05-14 Heizapparat für Halbleiter-Wafer

Publications (2)

Publication Number Publication Date
EP0290692A1 EP0290692A1 (de) 1988-11-17
EP0290692B1 true EP0290692B1 (de) 1993-09-08

Family

ID=8197911

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19870304297 Expired - Lifetime EP0290692B1 (de) 1985-07-29 1987-05-14 Heizapparat für Halbleiter-Wafer

Country Status (2)

Country Link
EP (1) EP0290692B1 (de)
DE (1) DE3787367T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4223133A1 (de) * 1991-07-15 1993-01-21 T Elektronik Gmbh As Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
FR2794054B1 (fr) * 1999-05-31 2001-08-10 Faure Bertrand Equipements Sa Procede et dispositif d'assemblage par collage d'une matelassure avec une coiffe d'habillage d'un siege

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
JPS59928A (ja) * 1982-06-25 1984-01-06 Ushio Inc 光加熱装置
JPS5938584A (ja) * 1982-08-30 1984-03-02 ウシオ電機株式会社 照射加熱炉の運転方法
JPS5959876A (ja) * 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies

Also Published As

Publication number Publication date
DE3787367D1 (de) 1993-10-14
DE3787367T2 (de) 1994-04-14
EP0290692A1 (de) 1988-11-17

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