EP0142178B1 - Ultraschall-Wandler - Google Patents

Ultraschall-Wandler Download PDF

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Publication number
EP0142178B1
EP0142178B1 EP84201200A EP84201200A EP0142178B1 EP 0142178 B1 EP0142178 B1 EP 0142178B1 EP 84201200 A EP84201200 A EP 84201200A EP 84201200 A EP84201200 A EP 84201200A EP 0142178 B1 EP0142178 B1 EP 0142178B1
Authority
EP
European Patent Office
Prior art keywords
piezoelectric material
layer
medium
acoustic impedance
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP84201200A
Other languages
English (en)
French (fr)
Other versions
EP0142178A1 (de
EP0142178B2 (de
Inventor
Claude Robert Mequio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Laboratoires dElectronique Philips SAS
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique Philips SAS, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Laboratoires dElectronique Philips SAS
Publication of EP0142178A1 publication Critical patent/EP0142178A1/de
Publication of EP0142178B1 publication Critical patent/EP0142178B1/de
Application granted granted Critical
Publication of EP0142178B2 publication Critical patent/EP0142178B2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators

Definitions

  • the present invention relates to an ultrasonic transducer comprising a substrate constituting a rear medium, a layer of piezoelectric material and one or more matching layers whose acoustic impedance has a value between that of the piezoelectric material and that of a medium before spread.
  • a second embodiment of the ultrasonic transducer according to the invention is presented as an ultrasonic transducer comprising a substrate constituting a rear medium, a layer of piezoelectric material and one or more adaptation layers, the values of the impedances of the layer of piezoelectric material, adaptation layers of acoustic impedance and of the medium before propagation forming, considered in this order, a decreasing sequence, characterized in that the adaptation layers are placed in identical number on either side of the piezoelectric material, the layers located symmetrically two by two having the same acoustic impedance value and the same thickness, in that the rear medium has an acoustic impedance value substantially equal to that of the medium before propagation, and in that the thickness of the layer of piezoelectric material is equal to half the wavelength associated with the f resonance frequency of the transducer, so that the structure is symmetrical with respect to the median plane of the layer of piezoelectric material.
  • the essential characteristic of the structure with total symmetry is very good damping.
  • the advantages of the structure with virtual symmetry are the following: gain of 6 dB (maximum) on the sensitivity index of the structure with total symmetry, thanks to the effect of "acoustic mirror of the rigid rear center which reflects all the acoustic energy towards the front, maintaining the same damping as that, very satisfactory, of the structure with total symmetry, thickness of the piezoelectric material twice less, for a given working frequency, than with conventional transducers with a piezoelectric layer in ⁇ / 2 (this last characteristic is important for piezoelectric polymers such as the polyvinylidene fluoride mentioned above, which are difficult to obtain in high thicknesses).

Claims (2)

1. Ultraschall-Wandler mit einem Substrat (10), bestehend aus einem hinteren Medium, einer Schicht piezoelektrischen Materials (20) und einer oder mehreren Anpassungsschichten (30, 40), angeordnet zwischen dem piezoelektrischen Material und dem vorderen Fortpflanzungsmedium (50), wobei die Impedanzwerte der piezoelektrischen Materialschicht, der Anpassungsschichten für die akustische Impedanz und des vorderen Fortpflanzungsmediums (50) in dieser Reihenfolge eine abfallende Reihe bilden, dadurch gekennzeichnet, daß das hintere Medium (10) einen akustischen Impedanzwert hat, der in bezug auf den des piezoelektrischen Materials (20) hoch genug ist, um als starr betrachtet zu werden, und daß die Dicke der piezoelektrischen Materialschicht (20) gleich einem Viertel der der Wandler-Resonanzfrequenz zugeordneten Wellenlänge ist.
2. Ultraschall-Wandler mit einem Substrat (10), bestehend aus einem hinteren Medium, einer Schicht piezoelektrischen Materials (20) und einer oder mehreren Anpassungsschichten (30, 40), wobei die Impedanzwerte der piezoelektrischen Materialschicht (20), der Anpassungsschichten für die akustische Impedanz und des vorderen Fortpflanzungsmediums (50) in dieser Reihenfolge eine abfallende Reihe bilden, dadurch gekennzeichnet, daß die Anpassungsschichten (30, 40) in gleicher Anzahl an beiden Seiten des piezoelektrischen Materials (20) angeordnet sind, wobei die je zwei und zwei symmetrisch angeordneten Schichten den gleichen akustischen Impedanzwert und die gleiche Dicke haben, daß das hintere Medium (10) einen akustischen Impedanzwert im wesentlichen gleich dem des vorderen Fortpflanzungsmediums (50) hat, und daß die Dicke der piezoelektrischen Materialschicht (20) gleich der halben, der Wandler-Resonanzfrequenz zugeordneten Wellenlänge ist, derart daß die Struktur in bezug auf die Mittelebene der piezoelektrischen Materialschicht symmetrisch ist.
EP84201200A 1983-08-31 1984-08-20 Ultraschall-Wandler Expired - Lifetime EP0142178B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8313986 1983-08-31
FR8313986A FR2551611B1 (fr) 1983-08-31 1983-08-31 Nouvelle structure de transducteur ultrasonore et appareil d'examen de milieux par echographie ultrasonore comprenant une telle structure

Publications (3)

Publication Number Publication Date
EP0142178A1 EP0142178A1 (de) 1985-05-22
EP0142178B1 true EP0142178B1 (de) 1990-01-03
EP0142178B2 EP0142178B2 (de) 1994-01-12

Family

ID=9291921

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84201200A Expired - Lifetime EP0142178B2 (de) 1983-08-31 1984-08-20 Ultraschall-Wandler

Country Status (7)

Country Link
US (1) US4771205A (de)
EP (1) EP0142178B2 (de)
JP (1) JPH0640676B2 (de)
CA (1) CA1260603A (de)
DE (1) DE3480968D1 (de)
FR (1) FR2551611B1 (de)
IL (1) IL72791A (de)

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Also Published As

Publication number Publication date
IL72791A0 (en) 1984-11-30
FR2551611B1 (fr) 1986-10-24
FR2551611A1 (fr) 1985-03-08
DE3480968D1 (de) 1990-02-08
IL72791A (en) 1988-08-31
EP0142178A1 (de) 1985-05-22
CA1260603A (en) 1989-09-26
EP0142178B2 (de) 1994-01-12
JPS6084099A (ja) 1985-05-13
US4771205A (en) 1988-09-13
JPH0640676B2 (ja) 1994-05-25

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