EP0118643B1 - Kathodenanordnung für Gerät zum Niederschlagen durch Glimmentladung - Google Patents
Kathodenanordnung für Gerät zum Niederschlagen durch Glimmentladung Download PDFInfo
- Publication number
- EP0118643B1 EP0118643B1 EP83307893A EP83307893A EP0118643B1 EP 0118643 B1 EP0118643 B1 EP 0118643B1 EP 83307893 A EP83307893 A EP 83307893A EP 83307893 A EP83307893 A EP 83307893A EP 0118643 B1 EP0118643 B1 EP 0118643B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- cathode
- deposition
- glow discharge
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title claims description 181
- 238000000151 deposition Methods 0.000 claims description 197
- 239000000758 substrate Substances 0.000 claims description 131
- 239000007789 gas Substances 0.000 claims description 124
- 239000004065 semiconductor Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 79
- 239000000463 material Substances 0.000 claims description 64
- 239000002243 precursor Substances 0.000 claims description 23
- 238000007599 discharging Methods 0.000 claims 2
- 238000011144 upstream manufacturing Methods 0.000 description 66
- 230000008569 process Effects 0.000 description 65
- 230000005672 electromagnetic field Effects 0.000 description 25
- 239000000203 mixture Substances 0.000 description 24
- 239000000356 contaminant Substances 0.000 description 23
- 239000012535 impurity Substances 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000956 alloy Substances 0.000 description 10
- 238000010924 continuous production Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 230000009257 reactivity Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000010923 batch production Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Claims (12)
1. Vorrichtung zum Niederschlagen (Abscheiden) durch Glimmentladung, bei der eine Schicht eines amorphen Halbleiters auf einem Substrat durch Glimmentladung in den Ausgangsgasen für den Halbleiter niederschlagbar ist und eine Niederschlagskammer (28a, 29), zum Zuführen eines Stroms der Ausgangsgase in diese eine Gaszufuhr-Sammelleitung (36, 36a, 80), eine Austrittsöffnung (41a, 41) zum Abführen von verbrauchten Ausgangsgasen aus der Kammer und eine Kathode (34a, 34d) zum Aufbau einer Glimmentladung zwischen der Kathode und einem elektrisch leitenden Substrat (11a, 11) in den Ausgangsgasen aufweist, die von der Sammelleitung in die Austrittsöffnung strömen, dadurch gekennzeichnet, daß eine Vorkathode (62, 68) entlang dem Weg des Stroms der Ausgangsgase zwischen der Sammelleitung (36, 36a, 80) und der Kathode (34a, 34d) in der Kammer (28a, 29) angeordnet ist, um eine Anfangs-Glimmentladung in den strömenden Ausgangsgasen aufzubauen, bevor diese Gase zwischen der Kathode (34a, 34d) und dem Substrat (11, 11a) strömen, daß die Kathode (34a, 34d) und die Vorkathode (62, 68) gemeinsam enden und/oder zusammenstoßen und daß eine Sammelplatte gegenüber der Vorkathode (62, 68) als zweite Elektrode zum Aufbau der Anfangs-Glimmentladung und zum das Sammeln von Material angeordnet ist, das sich durch die Anfangs-Glimmentladung abscheidet.
2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß sich die Kathode (34a, 34d) und Vorkathode (62, 68) im wesentlichen gleich weit in Querrichtung zum Strom der Ausgangsgase erstrecken.
3. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß sich die Sammelplatte (72) and das Substrat (11) im wesentlichen gleich weit in Querrichtung zum Strom der Ausgangsgase erstrecken.
4. Vorrichtung nach Anspruch 3, dadurch gekennzeichnet, daß die Sammelplatte (72) angrenzend an das Substrat angeordnet ist.
5. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Sammelplatte (80a) zwischen einem Teil des Substrats (11) und der Vorkathode (62) angeordnet ist.
6. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Sammelleitung (36a) wenigstens eine Zufuhrleitung (36a) mit offenem Ende aufweist, um die Ausgangsgase durch das Ende abzuführen.
7. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Sammelleitung (80) zum Abführen der Ausgangsgase wenigstens eine Zufuhrleitung (36) mit einer Vielzahl von Öffnungen entlang ihrer Länge aufweist.
8. Vorrichtung nach Anspruch 7, dadurch gekennzeichnet, daß die Sammelleitung (80) eine Vielzahl von Ablenkplatten (82) enthält, die zum Aufbau eines gewundenen Wegs des Stroms der Ausgangsgase zwischen der Zufuhrleitung und der Vorkathode (62) angeordnet sind.
9. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Kathode (34d) und die Vorkathode (62) in elektrischer Verbindung stehen.
10. Vorrichtung nach Anspruch 1, bei der die Niederschlagskammer eine Bodenplatte aufweist, dadurch gekennzeichnet, daß die Kathode entgegengesetzte erste und zweite Seiten hat, von denen zur Bildung der Vorkathode die erste Seite dem Substrat (11) und die zweite Seite der Bodenplatte gegenüber angeordnet sind.
11. Vorrichtung nach Anspruch 10, dadurch gekennzeichnet, daß die Sammelleitung (36) zwischen der Bodenplatte und der zweiten Seite der Kathode angeordnet ist.
12. Verfahren zum Niederschlagen (Abscheiden) eines amorphen Halbleiters auf einem Substrat, bei dem ein Strom von Halbleiterausgangsgasen durch eine Kammer in eine Niederschlagsvorrichtung geleitet und zum Niederschlagen des Halbleiters auf dem Substrat eine Glimmentladung in den strömenden Gasen innerhalb der Kammer zwischen einer Kathode und dem Substrat aufgebaut und aufrechterhalten wird, dadurch gekennzeichnet, daß eine Anfangs-Glimmentladung in den strömenden Gasen innerhalb der Kammer von einer Vorkathode und einer Sammelplatte aufgebaut und aufrechterhalten wird, die dieser gegenüber als eine zweite Elektrode angeordnet ist, ehe die strömenden Gase zwischen der Kathode und dem Substrat entlangströmen, und daß die Kathode und die Vorkathode aneinandergrenzen und/oder sich gleich weit erstrecken und die Sammelplatte das von der Anfangs-Glimmentladung niedergeschlagene Material sammelt.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/452,224 US4513684A (en) | 1982-12-22 | 1982-12-22 | Upstream cathode assembly |
| US452224 | 1982-12-22 | ||
| US549054 | 1983-11-07 | ||
| US06/549,054 US4483883A (en) | 1982-12-22 | 1983-11-07 | Upstream cathode assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0118643A1 EP0118643A1 (de) | 1984-09-19 |
| EP0118643B1 true EP0118643B1 (de) | 1989-03-29 |
Family
ID=27036702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP83307893A Expired EP0118643B1 (de) | 1982-12-22 | 1983-12-22 | Kathodenanordnung für Gerät zum Niederschlagen durch Glimmentladung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4483883A (de) |
| EP (1) | EP0118643B1 (de) |
| JP (1) | JPS59155124A (de) |
| KR (1) | KR840007320A (de) |
| AU (1) | AU2245783A (de) |
| BR (1) | BR8307045A (de) |
| CA (1) | CA1248210A (de) |
| DE (1) | DE3379509D1 (de) |
| ES (2) | ES8603114A1 (de) |
| IN (1) | IN159704B (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3316693A1 (de) * | 1983-05-06 | 1984-11-08 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum herstellen von amorphen kohlenstoffschichten auf substraten und durch das verfahren beschichtete substrate |
| US4678679A (en) * | 1984-06-25 | 1987-07-07 | Energy Conversion Devices, Inc. | Continuous deposition of activated process gases |
| US4568437A (en) * | 1984-12-28 | 1986-02-04 | Rca Corporation | Method and apparatus for forming disilane |
| DE3706482A1 (de) * | 1986-02-28 | 1987-09-03 | Politechnika Warszawska | Verfahren und vorrichtungen zur herstellung von diffusionsoberflaechenschichten auf metallenen werkstuecken durch glimmentladung |
| US4735633A (en) * | 1987-06-23 | 1988-04-05 | Chiu Kin Chung R | Method and system for vapor extraction from gases |
| US4870030A (en) * | 1987-09-24 | 1989-09-26 | Research Triangle Institute, Inc. | Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer |
| GB2264957B (en) * | 1992-03-12 | 1995-09-20 | Bell Communications Res | Deflected flow in a chemical vapor deposition cell |
| DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
| TW200703672A (en) * | 2004-11-10 | 2007-01-16 | Daystar Technologies Inc | Thermal process for creation of an in-situ junction layer in CIGS |
| US20060096536A1 (en) * | 2004-11-10 | 2006-05-11 | Daystar Technologies, Inc. | Pressure control system in a photovoltaic substrate deposition apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0118644A1 (de) * | 1982-12-22 | 1984-09-19 | Energy Conversion Devices, Inc. | Kathodenanordnung für Gerät zum Niederschlagen durch Glimmentladung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
| GB1550853A (en) * | 1975-10-06 | 1979-08-22 | Hitachi Ltd | Apparatus and process for plasma treatment |
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
| US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
| JPS5934421B2 (ja) * | 1979-11-29 | 1984-08-22 | 住友電気工業株式会社 | 薄膜製造法 |
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
| EP0060651B1 (de) * | 1981-03-16 | 1986-07-30 | Energy Conversion Devices, Inc. | Vorrichtung mit einer Kathode zum kontinuierlichen Niederschlagen eines amorphen Materials |
| JPS5833829A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 薄膜形成装置 |
-
1983
- 1983-11-07 US US06/549,054 patent/US4483883A/en not_active Expired - Lifetime
- 1983-12-14 IN IN840/DEL/83A patent/IN159704B/en unknown
- 1983-12-15 AU AU22457/83A patent/AU2245783A/en not_active Abandoned
- 1983-12-20 CA CA000443737A patent/CA1248210A/en not_active Expired
- 1983-12-21 ES ES528255A patent/ES8603114A1/es not_active Expired
- 1983-12-21 KR KR1019830006056A patent/KR840007320A/ko not_active Application Discontinuation
- 1983-12-21 BR BR8307045A patent/BR8307045A/pt unknown
- 1983-12-21 JP JP58241830A patent/JPS59155124A/ja active Granted
- 1983-12-22 EP EP83307893A patent/EP0118643B1/de not_active Expired
- 1983-12-22 DE DE8383307893T patent/DE3379509D1/de not_active Expired
-
1985
- 1985-07-01 ES ES544758A patent/ES8707630A1/es not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0118644A1 (de) * | 1982-12-22 | 1984-09-19 | Energy Conversion Devices, Inc. | Kathodenanordnung für Gerät zum Niederschlagen durch Glimmentladung |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2245783A (en) | 1984-06-28 |
| ES544758A0 (es) | 1987-08-01 |
| KR840007320A (ko) | 1984-12-06 |
| BR8307045A (pt) | 1984-07-31 |
| DE3379509D1 (en) | 1989-05-03 |
| US4483883A (en) | 1984-11-20 |
| JPS59155124A (ja) | 1984-09-04 |
| CA1248210A (en) | 1989-01-03 |
| JPH0576173B2 (de) | 1993-10-22 |
| ES528255A0 (es) | 1985-12-01 |
| ES8707630A1 (es) | 1987-08-01 |
| EP0118643A1 (de) | 1984-09-19 |
| ES8603114A1 (es) | 1985-12-01 |
| IN159704B (de) | 1987-06-06 |
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