EP0113907B1 - Couche destinée à empêcher les perturbations provoquées par l'émission d'électrons secondaires et procédé de fabrication d'une telle couche - Google Patents
Couche destinée à empêcher les perturbations provoquées par l'émission d'électrons secondaires et procédé de fabrication d'une telle couche Download PDFInfo
- Publication number
- EP0113907B1 EP0113907B1 EP83112926A EP83112926A EP0113907B1 EP 0113907 B1 EP0113907 B1 EP 0113907B1 EP 83112926 A EP83112926 A EP 83112926A EP 83112926 A EP83112926 A EP 83112926A EP 0113907 B1 EP0113907 B1 EP 0113907B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- coating
- rough
- metals
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 97
- 239000011248 coating agent Substances 0.000 claims abstract description 39
- 238000000576 coating method Methods 0.000 claims abstract description 39
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 21
- 150000002739 metals Chemical class 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 230000002500 effect on skin Effects 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052742 iron Inorganic materials 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- 230000035515 penetration Effects 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000003792 electrolyte Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 5
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000005307 ferromagnetism Effects 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- HZYWFQBABNUAAP-UHFFFAOYSA-N gold;hydrochloride Chemical compound Cl.[Au] HZYWFQBABNUAAP-UHFFFAOYSA-N 0.000 claims description 3
- 238000007210 heterogeneous catalysis Methods 0.000 claims description 3
- -1 hydrogen compound Chemical class 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 150000002366 halogen compounds Chemical class 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229940046892 lead acetate Drugs 0.000 claims description 2
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 239000010970 precious metal Substances 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims 1
- 239000003929 acidic solution Substances 0.000 claims 1
- 239000003638 chemical reducing agent Substances 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 230000002045 lasting effect Effects 0.000 claims 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims 1
- 238000006722 reduction reaction Methods 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000001632 sodium acetate Substances 0.000 claims 1
- 235000017281 sodium acetate Nutrition 0.000 claims 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims 1
- 239000002344 surface layer Substances 0.000 abstract 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910001096 P alloy Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12882—Cu-base component alternative to Ag-, Au-, or Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
Definitions
- the present invention relates to a coating used to prevent interference from secondary electron emission and which contains an electrically conductive layer with a rough surface, for a surface of a base body which consists of an electrically conductive material at least in a certain area adjacent to the coated surface, and in Use of high frequency electrical fields is exposed.
- the present invention is based on the object of further developing the known coating mentioned above in such a way that it ensures satisfactory suppression of interference by secondary electron emission even at higher high-frequency powers and in the presence of higher static magnetic fields.
- a coating which serves to prevent interference from secondary emission and which contains an electrically conductive layer - rough layer - with a rough surface, for a surface of a base body which, at least in a certain area adjacent to the coated surface, consists of an electrically conductive layer Material consists, and the use is exposed to high-frequency electrical fields and which is characterized according to the invention in that the thickness of the rough layer is smaller than its skin effect penetration depth and that there is a layer - intermediate layer - of high conductivity, the thickness of which is substantially greater than that of the rough layer is their skin effect penetration depth at the operating frequencies of the electric fields.
- the present coating can be produced with a surface of sufficient roughness without the risk of overheating due to ohmic losses in the rough surface. Preferred embodiments of the present coating can also be used in the presence of strong magnetic fields.
- the present coating is also characterized by high thermal conductivity, so that, with appropriate thermal conductivity and / or cooling of the carrier body, very high thermal loads are also possible.
- FIG. 1 shows a schematic, greatly enlarged sectional view of a coating according to one embodiment of the invention when applied to a high-frequency, in particular microwave, conductor.
- the high-frequency conductor can be a waveguide, a resonator, an antenna, an electrode of a high-vacuum electron tube or the like, which are intended for operation at high frequencies, in particular microwave frequencies (3 ⁇ 10 8 Hz and above).
- the base body can consist entirely of an electrically conductive material, such as iron or non-magnetic steel.
- the carrier body can also consist of an electrically conductive material only in a thickness region adjoining the coated surface 10, but in the rest of an essentially insulating material such as ceramic or plastic.
- the free surface of the present electrically conductive coating is formed in a known manner by a layer 12 with a rough surface (“rough layer”), which consists of a material of sufficient electrical conductivity and whose special parameters will be discussed further below.
- An essential feature of the present coating is that an intermediate layer 16 of high electrical conductivity is arranged between the rough layer 12 and the surface 10 of the base body, preferably provided with an adhesive layer 14, the thickness D of which is significantly greater, in particular at least twice, preferably at least that Triple the Is the skin effect penetration depth at the operating frequencies.
- the skin effect penetration depth is known to be equal to the square root of two divided by the product of the angular frequency, the electrical conductivity and the magnetic permeability of the material in question.
- the intermediate layer 16 should have a high electrical conductivity, ie a resistivity of preferably less than 0.02 x 10 -6 ohm m. Suitable metals are e.g. As copper, silver or gold, copper is currently preferred.
- the intermediate layer (“conductivity layer”) 16 is intended to absorb the main part of the eddy currents induced by the high-frequency field and therefore has a thickness which is substantially greater than the skin effect penetration depth of the material in question.
- a thin adhesive layer 14 is expediently provided between the base body surface 10 and the conductivity layer 16, as mentioned.
- B. can consist of nickel.
- a thin protective layer 20 is preferably provided between the conductivity layer 16 and the rough metal layer 12, which has the task of protecting the conductive layer from oxidation during the application of the rough layer 12.
- the protective layer must be non-porous and have a uniform thickness d everywhere, which should be such that the skin effect penetration depth s for the material of the protective layer is substantially greater than d everywhere. In particular, should apply where p is the specific resistance and fL is the magnetic permeability of the protective layer and f is the nominal operating frequency.
- the high-frequency-induced eddy currents can penetrate into the underlying conductivity layer 16 practically unhindered.
- a nickel-phosphorus alloy with a phosphorus content of more than 8.5 percent by weight is suitable as material with these properties, since a phosphorus content of this size increases the specific resistance of the nickel many times over and eliminates the ferromagnetism of the nickel.
- the conductivity of the non-magnetic protective layer 20 is preferably less than 10 5 AN cm, its thickness can be, for example, about 1 pm.
- the installation can be carried out, for example, electrochemically by adding the elements mentioned in suitable electrolytes.
- the conductivity layer 16 is made of a material other than gold
- the gold layer 17 should be applied to the layers 16 immediately after they have been formed.
- the rough layer 12 may e.g. B. consist of one of the noble metals Ag, Au, Rh, Pd, Ir, Pt or an alloy thereof. Gold is preferred. However, metals from groups IVA, VA, VIA and Mn, Fe, Co, Ni, their alloys or semiconducting compounds with B, C, Si, N and silicon carbide, boron carbide or boron nitride and borosilicate can also be used.
- the ratio of roughness depth t to roughness width b of the roughened layer is preferably 1: 2 and greater, the roughness width itself being said to be smaller than the gyroradius of the secondary electrons.
- the thickness t of the rough layer and the thickness d of the protective layer 20 are advantageously at most 1/5 of the combined skin effect penetration depth of these layers at the operating frequency.
- the present coating can be produced as follows: First, the surface 10 of the base body is expediently pretreated for applying the adhesive layer 18, as is customary in electroplating technology, in particular degreased and pickled. If the base body consists of a non-conductor, an electrically conductive layer of sufficient thickness is first applied to it in a known manner. Then the thin adhesive layer 14 is made of z. B. nickel applied to ensure proper adhesion of the conductivity layer 16 on the surface 10 forming material. On the adhesive layer 14, the conductivity layer 16 is preferably applied immediately, z. B. by electroplating. The thin gold layer 17 is applied to this immediately.
- pore-free thin protective layer of uniform thickness can be applied to the conductivity layer 16 or the gold layer 17 by electrochemical reduction processes.
- the aqueous electrolytic solution shown in the following table can be used
- the electrochemical deposition of the nickel-phosphorus alloy is preferably carried out without current at a temperature in the range from approximately 80 to 95 ° C.
- nickel instead of or in addition to nickel, other metals such as Cr, Mn, Fe and Co can also be used.
- compounds of the elements of group VB (As, Sb, Bi), group IVB (C, Si, Ge, Sn, Pb) or group IIIB (B, Al, Ga, In, Te) or the metals V, Cr, Ti, Mo can be used to reduce the ferromagnetism z. B. suppress the nickel matrix by reductive incorporation of the elements mentioned.
- the rough layer 12 is now applied last to the protective layer 20 protecting the conductivity layer 16.
- the rate of precipitation of the material to be deposited must substantially exceed the rate of two-dimensional diffusion of the material in question along the surface in order to prevent orderly (epitaxial) growth of large crystals.
- This can u. a. by electroplating gold electrochemically, d. H. without electrodes, deposits in the strong fields of statistically distributed local elements. The latter are formed by the electrochemical potential difference between the metal forming the surface 10 and already deposited crystal nuclei, similar to that in corrosion processes.
- acids of other noble metals can also be used, e.g. As Ag, Rh, Pd, Ir, Pt, and these metals, especially in the case of platinum, deposit as a rough layer at a greatly increased current density.
- Platinum can e.g. B. from an aqueous electrolysis bath containing 2.5 to 3.5 wt.% Platinum chloride and 0.2 to 0.4 g / l lead acetate, at a current density of about 0.1 to 0.3 Alcm 2 and Temperature of about 20 ° C for about 10 to 25 seconds.
- Further possibilities for the production of the rough layer are to evaporate the metal in question in an inert gas atmosphere at a pressure of 0.05 to 1.0 mbar; furthermore, the material of the rough layer can be produced in a strongly supernormal glow discharge by sputtering or can be grown chemically from the gas phase by an accelerated Van Arkel process.
- the rough layer 12 you can (similar to the protective layer 20) metals from groups IVA to VIA (in particular W and Mo), also Mn, Fe, Co and Ni, which z. B. can be deposited electrolytically with a greatly increased current density in order to achieve the desired roughness.
- the rough layer 12 can also consist of high-melting semiconductors, such as compounds of the metals from groups IVA to VIA with B, C, Si, N, and silicon carbide, boron carbide, boron nitride and borosilicide, which, for. B.
- the roughness of the formed rough layer 12 required to reduce the secondary electron emission being increased by accelerating the deposition rate with pressure and temperature and / or by a glow discharge with the coated surface as cathode and / or by handicap the diffusion along the surface and corresponding disturbance of the epitaxial crystal growth is regulated by chemisorption of foreign gases such as CO 2 , S0 2 , H 2 S, N 2 or vapors of noble metals and metals of the iron group.
- a modified chemical vapor deposition process (“Chemical Vapor Deposition”) can be used, in which the structure to be provided with the rough layer heats up to a temperature of, for example, 800 to 1,000 ° C and is exposed to a substantially atmospheric pressure atmosphere consisting essentially of a stoichiometric mixture of gaseous or vaporous hydrocarbons, e.g. B. methane (CH 4 ), and titanium tetrachloride (TiCl 4 ) and an addition of one of the foreign gases mentioned above with a partial pressure of a few millibars.
- a substantially atmospheric pressure atmosphere consisting essentially of a stoichiometric mixture of gaseous or vaporous hydrocarbons, e.g. B. methane (CH 4 ), and titanium tetrachloride (TiCl 4 ) and an addition of one of the foreign gases mentioned above with a partial pressure of a few millibars.
- the structure to be coated is placed in a vacuum vessel.
- the vacuum vessel is evacuated and then with a stoichiometric mixture of hydrocarbon, e.g. As methane and titanium tetrachloride filled mbar under a pressure of several millibars to 10. 2
- a stoichiometric mixture of hydrocarbon e.g. As methane and titanium tetrachloride filled mbar under a pressure of several millibars to 10. 2
- one of the above-mentioned foreign gases can also be added under a partial pressure of 10 --- 3 to 10- 5 mbar.
- the structure to be coated is then heated to a temperature of about 200 ° C.
- a further process for the production of the rough layer from refractory semiconductor compounds of the metals of the subgroups IVA to VIA with B, C, Si, N, in particular titanium carbide, tantalum carbide, tungsten carbide and silicon carbide, boron carbide, boron nitride and borosilicide consists in the fact that these are in the form of small Applies particles from a suspension of a Cr, Mn, Fe, Ni or Co electrolyte to the protective layer 20 by combining electrolysis and cathaphoresis at voltages around 30 V and current densities of 100-500 A / m 2 .
- the aforementioned particles can be deposited simultaneously with the reductive deposition of Mn, Fe, Ni, Co or Cr.
- the particle size is preferably 1 ⁇ m and smaller. Concentrations of the suspended particles in the electrolyte of 0.5 to 1 kg / liter are preferred.
- a rough layer made of highly heat-resistant and mechanically very resistant materials is particularly advantageous if the coating is subjected to high thermal loads and other stresses, e.g. B. is exposed to particle bombardment, such as. B. is the case with the so-called first wall of a fusion reactor and also to a certain extent with accelerator electrodes.
- the process parameters should be controlled so that the ratio of the roughness depth t to the roughness width b is greater than or equal to approximately 1: 2. If the interception of the secondary electrons is to be ensured even in the presence of strong magnetic fields, the roughness width b must be smaller than the gyrorius of secondary electrons of medium exit energy.
- the gyro radius r ( ⁇ m) is approximately 3.4 / B at the average exit energy given above, where B is the magnetic field strength in Tesla.
- the coating is preferably still a final heat treatment in an inert gas atmosphere or in a high vacuum, e.g. B. for a few hours at 350 ° C to 600 ° C, to solidify the transitions from layer to layer by intermetallic diffusion. This ensures a smooth transition of the eddy and heat flows generated by the high frequency.
- the coating is advantageously stabilized by sparking (“spot knocking”).
- spot knocking The easiest way to do this is to apply several (e.g. 50) short high-frequency pulses of such a high voltage to the waveguide or the like when it is started up for the first time that a field emission of electrons at the tip, abnormally high or loose crystals of the rough metal layer immediately changes into a short-term thermal electron emission occurs. The tips or loose crystals evaporate.
- Permissible magnetic field 0 to 3 Tesla (30 kGauss), operating frequency range 0.5 to 5 GHz, permissible throughput of a waveguide in this frequency range: 0.3 to 3 megawatts with pulse lengths of less than 5 seconds and pressure of the residual gas atmosphere below 10- 3 millibars.
- the average secondary emission coefficient (number of primary electrons to that of the secondary electrons measured at a residual gas pressure of 10- 4 mbar H 2 ) had the following measured values for a coating of the type specified above:
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Solid Thermionic Cathode (AREA)
- Photoreceptors In Electrophotography (AREA)
- Cold Cathode And The Manufacture (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT83112926T ATE19325T1 (de) | 1982-12-21 | 1983-12-21 | Zur verhinderung von stoerungen durch sekundaerelektronenemission dienende beschichtung und verfahren zum herstellen einer solchen beschichtung. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3247268 | 1982-12-21 | ||
DE3247268A DE3247268C1 (de) | 1982-12-21 | 1982-12-21 | Zum Verringern von Stoerungen durch Sekundaerelektronenemission dienende Beschichtung fuer einen Hochfrequenzleiter und Verfahren zum Herstellen einer solchen Beschichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0113907A1 EP0113907A1 (fr) | 1984-07-25 |
EP0113907B1 true EP0113907B1 (fr) | 1986-04-16 |
Family
ID=6181265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP83112926A Expired EP0113907B1 (fr) | 1982-12-21 | 1983-12-21 | Couche destinée à empêcher les perturbations provoquées par l'émission d'électrons secondaires et procédé de fabrication d'une telle couche |
Country Status (5)
Country | Link |
---|---|
US (1) | US4559281A (fr) |
EP (1) | EP0113907B1 (fr) |
JP (1) | JPS59133706A (fr) |
AT (1) | ATE19325T1 (fr) |
DE (2) | DE3247268C1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5334909A (en) * | 1991-07-05 | 1994-08-02 | Nec Corporationcorporation | Microwave tube collector assembly including a chromium oxide film |
US5573845A (en) * | 1994-12-09 | 1996-11-12 | Olin Corporation | Superficial coating layer having acicular structures for electrical conductors |
US5767808A (en) * | 1995-01-13 | 1998-06-16 | Minnesota Mining And Manufacturing Company | Microstrip patch antennas using very thin conductors |
JP2001035249A (ja) * | 1999-07-23 | 2001-02-09 | Philips Japan Ltd | 導電性部材 |
US6179976B1 (en) | 1999-12-03 | 2001-01-30 | Com Dev Limited | Surface treatment and method for applying surface treatment to suppress secondary electron emission |
KR100696458B1 (ko) * | 2000-10-06 | 2007-03-19 | 삼성에스디아이 주식회사 | 전자관용 음극 및 그 제조방법 |
US7998594B2 (en) | 2008-02-11 | 2011-08-16 | Honeywell International Inc. | Methods of bonding pure rhenium to a substrate |
DE112009001179A5 (de) * | 2008-03-20 | 2011-02-17 | Tesat-Spacecom Gmbh & Co.Kg | RF-Bauteil und deren Verfahren zur Oberflächenbearbeitung |
US9960468B2 (en) * | 2012-09-07 | 2018-05-01 | Remec Broadband Wireless Networks, Llc | Metalized molded plastic components for millimeter wave electronics and method for manufacture |
CN103196932B (zh) * | 2013-02-26 | 2014-11-19 | 西安空间无线电技术研究所 | 一种确定微波部件金属表面二次电子发射系数的方法 |
ES2564054B1 (es) | 2014-09-16 | 2016-12-27 | Consejo Superior De Investigaciones Científicas (Csic) | Recubrimiento anti-multipactor |
CN104646832B (zh) * | 2015-01-23 | 2016-04-13 | 中国航天时代电子公司 | 一种抑制二次电子发射的微波器件表面加工装置及方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2294562A (en) * | 1939-07-15 | 1942-09-01 | Hygrade Syivania Corp | Carbonized steel strip and method of making same |
DE965857C (de) * | 1951-05-23 | 1957-06-27 | Int Standard Electric Corp | Verfahren zur Herstellung von nicht emittierenden Elektroden fuer elektrische Entladungsgefaesse |
US2748067A (en) * | 1951-07-20 | 1956-05-29 | Sylvania Electric Prod | Processing plated parts |
DE1022700B (de) * | 1955-11-19 | 1958-01-16 | Varian Associates | Metallischer Bauteil fuer Elektronenroehren |
GB913301A (en) * | 1958-03-25 | 1962-12-19 | Emi Ltd | Improvements in or relating to the formation of firmly adherent coatings of refractory materials on metal |
US3252034A (en) * | 1962-04-16 | 1966-05-17 | Eitel Mccullough Inc | R-f window for high power electron tubes |
US3662210A (en) * | 1970-04-28 | 1972-05-09 | Viktor Fedorovich Maximov | Electrode for pulse high-power electrovacuum devices |
FR2133212A5 (fr) * | 1971-04-13 | 1972-11-24 | Thomson Csf | |
US4233539A (en) * | 1979-03-05 | 1980-11-11 | Varian Associates, Inc. | Electron tube with reduced secondary emission |
GB2045518A (en) * | 1979-03-22 | 1980-10-29 | English Electric Valve Co Ltd | Travelling wave tube collectors |
DE2937874A1 (de) * | 1979-09-19 | 1981-04-02 | Bayer Ag, 5090 Leverkusen | Vergoldete, metallisierte, textile flaechengebilde, garne und fasern, verfahren zu ihrer herstellung und verwendung des textilgutes bei der absorption und reflexion von mikrowellen |
-
1982
- 1982-12-21 DE DE3247268A patent/DE3247268C1/de not_active Expired
-
1983
- 1983-12-19 US US06/563,050 patent/US4559281A/en not_active Expired - Fee Related
- 1983-12-21 AT AT83112926T patent/ATE19325T1/de not_active IP Right Cessation
- 1983-12-21 EP EP83112926A patent/EP0113907B1/fr not_active Expired
- 1983-12-21 JP JP58243079A patent/JPS59133706A/ja active Pending
- 1983-12-21 DE DE8383112926T patent/DE3363101D1/de not_active Expired
Non-Patent Citations (1)
Title |
---|
S. RAMO u.a.: "Fields and waves in modern radio", 2. Ausgabe, 1953, John Wiley & Sons, Inc. New York, US, Chapman & Hall, Ltd. London, GB, "Skin effect and circuit impedance elements", Seiten 230-242, 249-251 * |
Also Published As
Publication number | Publication date |
---|---|
ATE19325T1 (de) | 1986-05-15 |
US4559281A (en) | 1985-12-17 |
DE3247268C1 (de) | 1984-03-29 |
EP0113907A1 (fr) | 1984-07-25 |
JPS59133706A (ja) | 1984-08-01 |
DE3363101D1 (en) | 1986-05-22 |
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