EP0074295B1 - Passive microwave duplexer using semi-conductors - Google Patents

Passive microwave duplexer using semi-conductors Download PDF

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Publication number
EP0074295B1
EP0074295B1 EP82401518A EP82401518A EP0074295B1 EP 0074295 B1 EP0074295 B1 EP 0074295B1 EP 82401518 A EP82401518 A EP 82401518A EP 82401518 A EP82401518 A EP 82401518A EP 0074295 B1 EP0074295 B1 EP 0074295B1
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EP
European Patent Office
Prior art keywords
duplexer according
duplexer
grid
resonant slots
axis
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Expired
Application number
EP82401518A
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German (de)
French (fr)
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EP0074295A1 (en
Inventor
Gilles Sillard
Michel Baril
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Thales SA
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Thomson CSF SA
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Priority to AT82401518T priority Critical patent/ATE16332T1/en
Publication of EP0074295A1 publication Critical patent/EP0074295A1/en
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Publication of EP0074295B1 publication Critical patent/EP0074295B1/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q25/00—Antennas or antenna systems providing at least two radiating patterns
    • H01Q25/007—Antennas or antenna systems providing at least two radiating patterns using two or more primary active elements in the focal region of a focusing device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures

Abstract

A passive duplexer for electromagnetic waves operated within the millimetric wave range. The duplexer comprises a first horn associated with a radar transmitter and having a propagation axis ( DELTA 1), a plane circular grid inclined at 45 DEG with respect to ( DELTA 1), and a second horn associated with the radar receiver and having an axis ( DELTA 2) at right angles to ( DELTA 1). The grid is formed by a network of resonant slots equipped with at least one diode.

Description

L'invention est relative à un duplexeur d'ondes électromagnétiques passif à semi-conducteur.The invention relates to a passive semiconductor electromagnetic wave duplexer.

Dans un système radar, il est tout à fait nécessaire de protéger le récepteur radar à la fois contre l'énergie à haut niveau envoyée par l'émetteur et contre l'énergie provenant d'émetteurs radar voisins. Mais il est hautement souhaitable que toute l'énergie recueillie par l'antenne en provenance d'une cible éclairée par le rayonnement émis soit transmise sans perte au récepteur. Le duplexeur joue donc le rôle d'un commutateur isolant le récepteur lors de l'émission ou d'une émission voisine puissante et ouvrant la voie lors de la réception de signaux faibles par l'antenne.In a radar system, it is absolutely necessary to protect the radar receiver both against the high level energy sent by the transmitter and against the energy coming from neighboring radar transmitters. However, it is highly desirable that all the energy collected by the antenna from a target illuminated by the emitted radiation be transmitted without loss to the receiver. The duplexer therefore plays the role of a switch isolating the receiver during transmission or of a neighboring powerful transmission and opening the way when weak signals are received by the antenna.

Il existe à l'heure actuelle différents types de duplexeurs qui vont être décrits dans ce qui suit, mais qui présentent l'inconvénient de ne pas ou très mal fonctionner avec des ondes millimétriques. Un premier type de duplexeur représenté sur la figure 1 est constitué par deux limiteurs identiques 1 insérés entre deux coupleurs 3dB 21, 22, chaque limiteur 1 étant passant pour les signaux faibles mais réfléchissant pour les signaux de forte puissance. Le premier coupleur 21 est relié, en entrée, d'une part à l'émetteur 3 et d'autre part à l'antenne 4, tandis que ses sorties aboutissent chacune à un des deux limiteurs 1. Eux-mêmes sont reliés aux entrées du second coupleur 22, dont les sorties sont connectées respectivement au récepteur radar 5 et à une charge dissipatrice 6. Lors de l'émission du signal radar par l'émetteur 3, les limiteurs 1 le renvoient vers l'antenne 4 tandis qu'ils laissent passer, à la réception, les faibles signaux reçus.There are currently different types of duplexers which will be described in the following, but which have the disadvantage of not or very poorly functioning with millimeter waves. A first type of duplexer represented in FIG. 1 consists of two identical limiters 1 inserted between two 3dB couplers 21, 22, each limiter 1 being on for weak signals but reflecting for high power signals. The first coupler 21 is connected, at the input, on the one hand to the transmitter 3 and on the other hand to the antenna 4, while its outputs each lead to one of the two limiters 1. They themselves are connected to the inputs of the second coupler 22, the outputs of which are connected respectively to the radar receiver 5 and to a dissipating load 6. When the radar signal is emitted by the transmitter 3, the limiters 1 send it back to the antenna 4 while they pass weak signals received at reception.

Un second type de duplexeur (figures 2a et 2b), comportant un dispositif à ferrite non réciproque, fonctionne suivant le principe suivant : le signal provenant de l'émetteur est dirigé vers l'antenne. et tout signal reçu par l'antenne est obligatoirement dirigé vers le récepteur, quelle que soit sa puissance. La figure 2a montre un tel duplexeur comportant deux dispositifs à déphasage différentiel 74 et 75, dont le fonctionnement est le suivant : pour un signal initial venant de l'émetteur 7 et passant par un coupleur 71 provoquant une différence de phase de 111/2 entre les voies 72 et 73, le dispositif à ferrite à déphasage différentiel 74 déphase de 11/2 + <pu le signal de la voie 72 tandis que l'autre dispositif à ferrite 75 déphase de ϕν le signal de la voie 73. Les deux signaux dont les déphasages respectifs sont ϕo + π/2 et ϕo aboutissent à un Té magique 76 à la sortie duquel ils se retrouvent en phase vers la voie antenne 77. Si on considère maintenant un signal venant de l'antenne 77, quelle que soit sa puissance, il est déphasé de ϕo par le dispositif à ferrite 74 et de ϕo + π/2 par le dispositif à ferrite 75, de sorte que les signaux sortant respectivement des dispositifs 74 et 75 se retrouvent en phase, dans le récepteur, après passage dans le coupleur 71.A second type of duplexer (Figures 2a and 2b), comprising a non-reciprocal ferrite device, operates on the following principle: the signal from the transmitter is directed to the antenna. and any signal received by the antenna must be directed to the receiver, whatever its power. FIG. 2a shows such a duplexer comprising two devices with differential phase shift 74 and 75, the operation of which is as follows: for an initial signal coming from the transmitter 7 and passing through a coupler 71 causing a phase difference of 111/2 between channels 72 and 73, the ferrite device with differential phase shift 74 out of 11/2 + <pu the signal from channel 72 while the other ferrite device 75 out of ϕν the signal from channel 73. The two signals whose respective phase shifts are ϕo + π / 2 and ϕo lead to a magic tee 76 at the output of which they find themselves in phase towards the antenna channel 77. If we now consider a signal coming from the antenna 77, whatever its power, it is out of phase by ϕo by the ferrite device 74 and by ϕo + π / 2 by the ferrite device 75, so that the signals leaving the devices 74 and 75 respectively are found in phase, in the receiver, after passage in coupler 71.

Quant à la figure 2b, elle montre un duplexeur où le dispositif non réciproque est un circulateur à trois voies 8. Pour assurer la protection du récepteur radar contre les émissions à forte puissance des émetteurs radar voisins arrivant par l'antenne, on ajoute à ce type de duplexeur une cellule de limitation supplémentaire dans la voie réception, cette cellule étant constituée soit par un tube TR à gaz, dont la durée de vie est assez limitée, soit par des dispositifs à ferrites ou à diodes.As for Figure 2b, it shows a duplexer where the non-reciprocal device is a three-way circulator 8. To ensure the protection of the radar receiver against high-power emissions from neighboring radar transmitters arriving by the antenna, we add to this type of duplexer an additional limiting cell in the reception channel, this cell being constituted either by a gas TR tube, the lifetime of which is fairly limited, or by ferrite or diode devices.

Comme on l'a dit précédemment, ces duplexeurs n'ont pas un bon fonctionnement avec des ondes millimétriques, car les cellules de limitations décrites soit n'existent pas pour de telles ondes, c'est le cas des tubes TR, soit n'ont pas une bonnne tenue en puissance, c'est le cas des diodes existantes montées dans des structures classiques.As mentioned above, these duplexers do not work well with millimeter waves, because the limitation cells described either do not exist for such waves, this is the case for TR tubes, or n ' do not have a good power handling, this is the case of existing diodes mounted in conventional structures.

Le but de la présente invention est de résoudre ces difficultés en réalisant un duplexeur passif à semi-conducteur pour ondes électromagnétiques, comportant un premier cornet, connecté à l'émetteur radar et d'axe de propagation Δ1 une grille circulaire plane, réfléchissante ou transparente en fonction de la puissance des signaux incidents et inclinée à 45° par rapport à l'axe Δ1, et un second cornet connecté au récepteur et d'axe de propagation 2 orthogonal à l'axe Δ1.The aim of the present invention is to solve these difficulties by producing a passive semiconductor duplexer for electromagnetic waves, comprising a first horn, connected to the radar transmitter and with the axis of propagation Δ 1 a plane circular grid, reflecting or transparent as a function of the power of the incident signals and inclined at 45 ° relative to the axis Δ 1 , and a second horn connected to the receiver and of propagation axis 2 orthogonal to the axis Δ 1 .

Selon une caractéristique de l'invention, la grille est constituée par un disque diélectrique ou semi-conducteur, métallisé.sur une face, comportant un réseau de fentes résonnantes munies d'au moins une diode, cette grille étant transparente pour les signaux faibles et réfléchissante pour les signaux de forte puissance.According to a characteristic of the invention, the grid consists of a metallized dielectric or semiconductor disc on one side, comprising a network of resonant slots provided with at least one diode, this grid being transparent for weak signals and reflective for high power signals.

Selon une autre caractéristique, le duplexeur selon l'invention comporte plusieurs grilles parallèles.According to another characteristic, the duplexer according to the invention comprises several parallel grids.

D'autres caractéristiques et avantages de l'invention apparaîtront dans la description, illustrée par les figures suivantes qui, outre les figures 1 et 2 déjà décrites, représentent :

  • la figure 3 un schéma du duplexeur réalisé selon l'invention ;
  • la figure 4 une vue de face d'une grille utilisée dans un tel duplexeur ;
  • les figures 5, 6 et 7 différentes formes de fentes résonnantes utilisées dans un tel duplexeur.
Other characteristics and advantages of the invention will appear in the description, illustrated by the following figures which, in addition to Figures 1 and 2 already described, represent:
  • FIG. 3 a diagram of the duplexer produced according to the invention;
  • Figure 4 a front view of a grid used in such a duplexer;
  • Figures 5, 6 and 7 different forms of resonant slots used in such a duplexer.

La figure 3 montre le schéma d'un duplexeur selon l'invention. Il comprend un premier cornet 9 associé à l'émetteur radar 10, envoyant des ondes électromagnétiques millimétriques sur une grille 11, circulaire plane dont le diamètre est compatible avec un fonctionnement en ondes millimétriques, et inclinée à 45° par rapport à l'axe Δ1, de propagation du cornet 9. Il comprend également un second cornet 12 associé au récepteur radar 13, dont l'axe A2 de propagation est orthogonal à l'axe Δ1, et par une antenne 14 émettrice-réceptrice.FIG. 3 shows the diagram of a duplexer according to the invention. It includes a first horn 9 associated with the radar transmitter 10, sending millimeter electromagnetic waves on a grid 11, a circular plane whose diameter is compatible with millimeter wave operation, and inclined at 45 ° relative to the axis Δ 1 , for propagation of the horn 9. It also includes a second horn 12 associated with the radar receiver 13, the propagation axis A 2 of which is orthogonal to the axis Δ 1 , and by a transmitter-receiver antenna 14.

La grille 11 plane (figure 4) a un pouvoir réfléchissant ou transparent fonction de la puissance des signaux incidents, autrement dit, elle est totalement réfléchissante pour les signaux de forte puissance émis par l'émetteur 10 et totalement transparente pour les signaux faibles reçus par l'antenne 14. Elle est constituée par un disque soit diélectrique, soit semi-conducteur, mais dans les deux cas métallisé sur une face 15. La métallisation de cette face réalise un réseau de fentes résonnantes 16, comme le montre la figure 4, munies chacune d'au moins une diode 17. Lorsque le disque est en diélectrique, les diodes sont reportées puis connectées aux deux bords opposés de la fente. Lorsque le disque est en matériau semi-conducteur, les diodes 17 sont directement élaborées sur le disque.The flat grid 11 (FIG. 4) has a reflecting or transparent power depending on the power of the incident signals, in other words, it is completely reflective for the signals of high power emitted by the transmitter 10 and completely transparent for the weak signals received by the antenna 14. It consists of a disc either dielectric or semiconductor, but in both cases metallized on one side 15. The metallization of this face creates a network of resonant slots 16, as shown in FIG. 4, each provided with at least one diode 17. When the disk is in dielectric, the diodes are transferred and then connected to the two opposite edges of the slot. When the disc is made of semiconductor material, the diodes 17 are produced directly on the disc.

Le duplexeur ainsi réalisé fonctionne de la manière suivante : l'émetteur radar 10 envoie un signal radar à haute énergie, par l'intermédiaire du cornet 9 qui le dirige sur la grille 11. Recevant ce signal fort, les diodes 17 se comportent comme un court-circuit et l'ensemble fente-diode, est désaccordé rendant ainsi la grille 11 réfléchissante. La grille 11 envoie donc le signal radar vers l'antenne 14 qui le réfléchit à son tour vers l'espace, protégeant totalement le récepteur radar 13.The duplexer thus produced operates in the following manner: the radar transmitter 10 sends a high energy radar signal, via the horn 9 which directs it to the grid 11. Receiving this strong signal, the diodes 17 behave like a short-circuit and the slot-diode assembly is out of tune, thus making the grid 11 reflective. The grid 11 therefore sends the radar signal to the antenna 14 which in turn reflects it towards space, completely protecting the radar receiver 13.

Inversement, lorsque l'antenne 14 reçoit un signal de faible puissance, elle le dirige vers la grille 11. Or, pour les faibles signaux, les diodes 17 sont équivalentes à des capacités et l'ensemble fente-diode est adapté pour résonner aux fréquences d'utilisation. De sorte que le réseau de fentes résonnantes qui constitue la grille 11 est passant pour le signal à bas niveau, qui est bien reçu par le récepteur radar 13 par l'intermédiaire du cornet 12.Conversely, when the antenna 14 receives a low power signal, it directs it towards the gate 11. Now, for weak signals, the diodes 17 are equivalent to capacitances and the slot-diode assembly is adapted to resonate at frequencies of use. So that the network of resonant slots which constitutes the grid 11 is passing for the low level signal, which is well received by the radar receiver 13 via the horn 12.

Enfin, si un émetteur voisin de celui considéré 10, envoie des signaux hyperfréquence de forte puissance, qui sont captés par l'antenne 14, vers la grille 11, celle-ci redevient réfléchissante, protégeant le récepteur 13.Finally, if a transmitter close to that considered 10, sends high power microwave signals, which are picked up by the antenna 14, towards the grid 11, the latter becomes reflective again, protecting the receiver 13.

La forme des fentes résonnantes 17 peut être rectangulaire (figure 5a), ovale (figure 5b) ou bien encore présenter un étranglement 18 dans son milieu (figure 5c).The shape of the resonant slots 17 can be rectangular (FIG. 5a), oval (FIG. 5b) or even have a constriction 18 in its middle (FIG. 5c).

Etant donné le nombre de fentes 16 du réseau, la puissance du signal hyperfréquence, répartie sur toute la grille au moyen du cornet 9 ou de l'antenne 14, est relativement faible sur chaque fente donc sur chaque diode, permettant d'obtenir une bonne tenue en puissance. Cette tenue peut d'ailleurs être considérablement améliorée en connectant, entre les deux bords de chaque fente, au moins une paire de diode 19, de même polarité montées en shunt tête-bêche dans un même plan comme le montre les figures 6a, 6b et 6c. Dans ce cas, selon la polarité du signal hyperfréquence incident, c'est soit l'une, soit l'autre diode 19 qui conduit, protégeant l'autre diode en limitant la tension appliquée à ses bornes. La figure 6 montre un tel montage suivant la forme des fentes résonnantes 16.Given the number of slots 16 in the network, the power of the microwave signal, distributed over the entire grid by means of the horn 9 or the antenna 14, is relatively low on each slot, therefore on each diode, making it possible to obtain good power handling. This behavior can also be considerably improved by connecting, between the two edges of each slot, at least one pair of diode 19, of the same polarity mounted in shunt head to tail in the same plane as shown in Figures 6a, 6b and 6c. In this case, depending on the polarity of the incident microwave signal, it is either one or the other diode 19 which conducts, protecting the other diode by limiting the voltage applied to its terminals. FIG. 6 shows such an arrangement in the form of the resonant slots 16.

Pour améliorer encore le duplexeur selon l'invention, notamment lorsque le signal hyperfréquence arrivant sur la grille est polarisé selon deux directions, on réalise un réseau de fentes résonnantes 20 en forme de croix comme le montre la figure 7, chaque bras 22 et 23 agissant comme une fente simple pour une des deux polarisations. Pour chaque bras, les diodes 21 sont placées deux à deux tête-bêche, mais pas tout à fait dans le même plan, puisqu'elles sont séparées par la largeur de l'autre bras.To further improve the duplexer according to the invention, in particular when the microwave signal arriving on the grid is polarized in two directions, a network of resonant slots 20 in the form of a cross is produced as shown in FIG. 7, each arm 22 and 23 acting like a simple slot for one of the two polarizations. For each arm, the diodes 21 are placed two by two head to tail, but not entirely in the same plane, since they are separated by the width of the other arm.

Enfin, une dernière amélioration, portant sur la largeur de la bande passante du système, peut être apportée en plaçant plusieurs grilles, identiques à celle déjà décrite, parallèlement les unes aux autres de façon à constituer un filtre à réponse de Tchebischeff ou Butterworth par exemple.Finally, a final improvement, relating to the width of the bandwidth of the system, can be made by placing several grids, identical to that already described, parallel to each other so as to constitute a response filter by Tchebischeff or Butterworth for example. .

Pour tout ce qui vient d'être décrit, le diamètre de la grille, le nombre et la forme des fentes résonnantes sont déterminés par les caractéristiques des diodes, la polarisation et la puissance du signal hyperfréquence à traiter.For all that has just been described, the diameter of the grid, the number and the shape of the resonant slots are determined by the characteristics of the diodes, the polarization and the power of the microwave signal to be processed.

Grâce au duplexeur qui vient d'être décrit, le duplexage et la protection du récepteur radar contre tous les signaux hyperfréquence à forte puissance sont assurés, ces signaux se situant dans la gamme des ondes millimétriques. Ce dispositif présente l'avantage d'être passif et d'avoir une bonne tenue en puissance car celle-ci est entièrement répartie sur un grand nombre de diodes, d'ailleurs facilement réalisables et intégrables dans la grille.Thanks to the duplexer which has just been described, the duplexing and the protection of the radar receiver against all the high power microwave signals are ensured, these signals being situated in the millimeter wave range. This device has the advantage of being passive and of having good power handling because it is entirely distributed over a large number of diodes, which are moreover easily achievable and can be integrated into the grid.

Claims (10)

1. Passive semiconductor duplexer for electromagnetic waves, in a radar system comprising a transmitter (10) illuminating an antenna (14) in turn reflecting towards a receiver (13) the electromagnetic signals emitted by a target, characterized in that, the transmitter and the receiver operating in the millimeter wave range, it comprises a first horn (9) connected to the transmitter (10) and having an axis of propagation (A,), a circular plane grid (11) which is reflecting or transparent depending on the power of the incident signals and inclined at 45° with respect to the axis (A,), and a second horn (12) connected to the receiver (13) and having an axis of propagation (A2) which is perpendicular to the axis (A,) of the first horn (9).
2. Duplexer according to claim 1, characterized in that the grid (11) is totally transparent for the electromagnetic signals of low power and totally reflecting for high power signals.
3. Duplexer according to claim 2, characterized in that the grid (11) is formed by a dielectric disc metallized on one face (15) comprising a grating of resonant slots (16) each of which is provided with at least one diode (17).
4. Duplexer according to claim 2, characterized in that the grid (11) is formed of a semiconductor disc which is metallized on one face (15) comprising a grating of resonant slots (16) which are provided with at least one diode (17) directly formed on the semiconductor.
5. Duplexer according to any of claims 3 and 4, characterized in that the resonant slots (16) are provided with at least one pair of diodes (19) of same polarity and which are mounted in the same plane with opposite shunting orientations.
6. Duplexer according to any of claims 1 to 5, characterized in that the resonant slots (16) are of rectangular shapes and adapted to the polarization of the radar signal to be treated.
7. Duplexer according to any of claims 1 to 5, characterized in that the resonant slots (16) are of oval shapes.
8. Duplexer according to claims 1 to 5, characterized in that the resonant slots (16) have a narrowing (18) in their centers.
9. Duplexer according to any of claims 1 to 5, characterized in that the resonant slots (20) are cross-shaped and are provided with four diodes 21 placed two by two with opposite orientations.
10. Duplexer according to any of claims 1 to 9, characterized in that it comprises at least two parallel grids of such spacing that they form a filter unit having a response of the Tschebischeff or Butterworth type.
EP82401518A 1981-08-28 1982-08-10 Passive microwave duplexer using semi-conductors Expired EP0074295B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT82401518T ATE16332T1 (en) 1981-08-28 1982-08-10 PASSIVE MICROWAVE DUPLEXER WITH SEMICONDUCTORS.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8116467 1981-08-28
FR8116467A FR2512281B1 (en) 1981-08-28 1981-08-28

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EP0074295A1 EP0074295A1 (en) 1983-03-16
EP0074295B1 true EP0074295B1 (en) 1985-10-30

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US (1) US4574288A (en)
EP (1) EP0074295B1 (en)
JP (1) JPS5843601A (en)
AT (1) ATE16332T1 (en)
CA (1) CA1202105A (en)
DE (1) DE3267174D1 (en)
FR (1) FR2512281B1 (en)

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CA1202105A (en) 1986-03-18
EP0074295A1 (en) 1983-03-16
JPH0249561B2 (en) 1990-10-30
JPS5843601A (en) 1983-03-14
FR2512281A1 (en) 1983-03-04
US4574288A (en) 1986-03-04
ATE16332T1 (en) 1985-11-15
DE3267174D1 (en) 1985-12-05
FR2512281B1 (en) 1983-10-28

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