EP0073165B1 - Microwave switch - Google Patents

Microwave switch Download PDF

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Publication number
EP0073165B1
EP0073165B1 EP82401514A EP82401514A EP0073165B1 EP 0073165 B1 EP0073165 B1 EP 0073165B1 EP 82401514 A EP82401514 A EP 82401514A EP 82401514 A EP82401514 A EP 82401514A EP 0073165 B1 EP0073165 B1 EP 0073165B1
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EP
European Patent Office
Prior art keywords
switch
guide
waveguide
diode
switch according
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Expired
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EP82401514A
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German (de)
French (fr)
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EP0073165A1 (en
Inventor
Michel Baril
Gilles Sillard
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Thales SA
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Thomson CSF SA
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Priority to AT82401514T priority Critical patent/ATE26506T1/en
Publication of EP0073165A1 publication Critical patent/EP0073165A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the invention relates to an electromagnetic wave switch made from a semiconductor placed in a waveguide and operating for millimeter waves.
  • the aim of such a device is to transmit certain microwave signals without loss of power and to attenuate certain others.
  • FIG. 1 represents a cross section of a rectangular waveguide 1 comprising a PIN diode 2 placed on one of the internal faces 3 of the guide.
  • the bias voltage V of the diode is introduced by a coaxial line 4, which is connected to the housing of the diode by a microwave trap 5 and by a metal bar 6, the trap being separated from the coaxial line by a piece of insulation. 50.
  • microwave switch close to the previous one, and comprising a PIN diode. It operates in mode 2, that is to say that the PIN diode and its circuit have a series resonant circuit when the diode is blocked and a parallel resonant circuit when it conducts.
  • an electromagnetic wave switch comprising a rectangular waveguide itself comprising a step providing a ridged space, of determined volume, in which a PIN diode is arranged, the waveguide is constructed in two parts, one being a flat metal plate and the other being a U-shaped metal plate comprising the step, the union of the two forming the cavity of the waveguide, and these two parts being isolated by a layer of insulating material, the two metallized faces of the diode being respectively welded one to the flat metal plate, and the other to the step of the waveguide.
  • FIG. 2 represents a switch according to the invention, seen in section along a cross section. It is produced from a rectangular waveguide 7, constructed in two parts, one being a flat metal plate 70 and the other being a metal plate 72 in the shape of a U, the union of the two producing the cavity of the waveguide. They are insulated from each other by a layer of insulating material 71.
  • the part 72 has a step 73 in its central part, providing in the guide a space called ridged according to English terminology, space in which is concentrated the electric field.
  • a semiconductor bar 10 with high breakdown voltage - several hundred volts - and low thermal resistance, this bar having a volume identical to the volume defined by the wrinkled space.
  • the cathode 101 of the diode 10 is connected to the step 73 while its anode 102 is connected to the other part 70.
  • a voltage ⁇ V is applied between these two parts.
  • the guide when the diode is blocked, the guide, on the one hand, can be considered to be filled with a dielectric material of high dielectric constant ⁇ ( ⁇ ⁇ 12 for a PIN diode) and on the other hand to dimensions such as propagation of a millimeter wave is possible. In this case, such a wave is transmitted through the switch.
  • a conventional PIN diode is used, the dimensions of which are adjusted to those of the guide and the two faces of which are metallized. To ensure good heat dissipation, the two metallized faces of the diode are welded to the walls of the guide.
  • FIG. 3 represents a switch according to the invention, according to a perspective view.
  • the elements identical to those of FIG. 2 provide the same functions and have the same references.
  • the transitions are ensured by bevels 9, or tapers in Anglo-Saxon terms, which are equivalent to transformers adapting the discontinuities.
  • the dimension of the PIN diode 10, L 5 along the longitudinal axis A of the waveguide, is a multiple of a quarter of the guided wavelength ⁇ g at the central frequency of the operating band.
  • this dimension is equal to 3 A g / 4 rather than A g / 4, since the dimension of the PIN diodes commonly used is of the order of 0.6 to 0.7 mm.
  • Figure 4 is a view along a longitudinal section of the waveguide 7, having the same references as the two previous figures. The dimensions, along the axis ⁇ , of the PIN diode 10 and the bevels 9 are also carried there.
  • FIG. 5 a particular embodiment of a switch according to the invention.
  • the two parts 70 and 72, separated by the insulator 71, are screwed together by nylon screws 15 for example.
  • These two traps 18, the depth d of which is a multiple of ⁇ / 4 bring an open circuit at the level of the insulating plate, therefore bring a short-circuit to the edges 19 of the waveguide.
  • This electric short-circuit makes it possible to achieve continuity from the microwave point of view while being an insulator from the continuous point of view.
  • This device can be used in all systems where it is necessary to attenuate or switch an electromagnetic signal. Thus it can either protect a receiver by acting as a controlled protective circuit, or be associated with a switch to switch a signal in a determined channel.
  • the switch 20 is on, the other 21 being blocked, an incoming signal through channel 22 is directed towards the switch 20 and vice versa when the switch is blocked, the other 21 being on.

Abstract

An electromagnetic wave switch is provided formed from a profiled wave-guide associated with a PIN diode, filling completely the profiled part of said guide, having a high breakdown voltage and a low thermal resistance.

Description

L'invention est relative à un commutateur d'ondes électromagnétiques réalisé à partir d'un semiconducteur placé dans un guide d'ondes et fonctionnant pour des ondes millimétriques. Le but d'un tel dispositif est de transmettre sans pertes de puissance certains signaux hyperfréquence et d'en atténuer certains autres.The invention relates to an electromagnetic wave switch made from a semiconductor placed in a waveguide and operating for millimeter waves. The aim of such a device is to transmit certain microwave signals without loss of power and to attenuate certain others.

L'art antérieur fournit des exemples de réalisation de commutateurs hyperfréquence, constitués notamment d'une diode PIN associée à un circuit de polarisation et montée dans un guide d'ondes. La figure 1 représente une section droite d'un guide d'ondes 1 rectangulaire comportant une diode PIN 2 placée sur une des faces internes 3 du guide. La tension de polarisation V de la diode est introduite par une ligne coaxiale 4, qui est reliée au boîtier de la diode par un piège hyperfréquence 5 et par un barreau métallique 6, le piège étant séparé de la ligne coaxiale par un morceau d'isolant 50. Le fonctionnement d'un tel commutateur est le suivant: lorsque la diode est bloquée, elle est équivalente avec son circuit de polarisation à un circuit résonnant parallèle, tandis que lorsqu'elle conduit, elle est équivalente à un circuit résonnant série, laissant ainsi passer le signal hyperfréquence se propageant dans le guide d'ondes, ou l'atténuant.The prior art provides exemplary embodiments of microwave switches, notably consisting of a PIN diode associated with a bias circuit and mounted in a waveguide. FIG. 1 represents a cross section of a rectangular waveguide 1 comprising a PIN diode 2 placed on one of the internal faces 3 of the guide. The bias voltage V of the diode is introduced by a coaxial line 4, which is connected to the housing of the diode by a microwave trap 5 and by a metal bar 6, the trap being separated from the coaxial line by a piece of insulation. 50. The operation of such a switch is as follows: when the diode is blocked, it is equivalent with its bias circuit to a parallel resonant circuit, while when it conducts, it is equivalent to a series resonant circuit, leaving thus pass the microwave signal propagating in the waveguide, or attenuating it.

Il existe un autre type de commutateur hyperfréquence, voisin du précédent, et comportant une diode PIN. Il fonctionne en mode 2, c'est-à-dire que la diode PIN et son circuit présentent un circuit résonnant série lorsque la diode est bloquée et un circuit résonnant parallèle quand elle conduit.There is another type of microwave switch, close to the previous one, and comprising a PIN diode. It operates in mode 2, that is to say that the PIN diode and its circuit have a series resonant circuit when the diode is blocked and a parallel resonant circuit when it conducts.

Deux inconvénients principaux apparaissent lors du fonctionnement de ce genre de commutateur. L'un vient du fait que les boîtiers protégeant les diodes PIN ainsi que les différents éléments comme le barreau métallique qui assure à la fois le montage mécanique et l'arrivée de la polarisation de la diode, sont des éléments parasites selfiques et/ou capacitifs limitant la bande passante de fonctionnement du commutateur.Two main drawbacks appear when operating this kind of switch. One comes from the fact that the boxes protecting the PIN diodes as well as the various elements such as the metal bar which ensures both the mechanical mounting and the arrival of the polarization of the diode, are inductive and / or capacitive parasitic elements. limiting the operating bandwidth of the switch.

L'autre inconvénient est dû à l'impossibilité d'utiliser un tel commutateur en ondes millimétriques. En effet, pour le bon fonctionnement du commutateur, il faut une diode PIN ayant une capacité de jonction très faible, ce qui est très difficilement réalisable et ce qui peut entraîner une mauvaise tenue en puissance due à une tension de claquage trop basse et/ou à une mauvaise résistance thermique de la diode.The other drawback is due to the impossibility of using such a millimeter wave switch. Indeed, for the proper functioning of the switch, a PIN diode is required having a very low junction capacity, which is very difficult to achieve and which can cause poor power handling due to a too low breakdown voltage and / or poor thermal resistance of the diode.

Un autre type de commutateur hyperfréquence est également connu du document US 3 346 825. Ce document montre en effet un guide d'ondes, dont les dimensions sont rétrécies en sa partie centrale pour définir un certain volume occupé par deux barreaux de semiconducteurs placés symétriquement de part et d'autre d'une plaquette métallique. La polarisation de ces deux semi-conducteurs est amenée par un conducteur traversant une des parois du guide et aboutissant à la plaquette métallique de separation, une tension étant appliquée entre ce conducteur et les parois du guide, les deux barreaux étant ainsi montés en opposition.Another type of microwave switch is also known from document US 3 346 825. This document indeed shows a waveguide, the dimensions of which are narrowed in its central part to define a certain volume occupied by two semiconductor bars placed symmetrically of on either side of a metal plate. The polarization of these two semiconductors is brought by a conductor passing through one of the walls of the guide and ending at the metal separation plate, a voltage being applied between this conductor and the walls of the guide, the two bars thus being mounted in opposition.

Tous ces commutateurs hyperfréquence ont en commun le fait qu'une tension de polarisation est toujours amenée de l'exterieur en traversant l'une des parois du guide.All these microwave switches have in common the fact that a bias voltage is always brought from the outside by passing through one of the walls of the guide.

Dans un commutateur d'ondes électromagnétiques suivant l'invention, comportant un guide d'ondes rectangulaire comportant lui-même un redan ménageant un espace ridgé, de volume déterminé, dans lequel est disposée une diode PIN, le guide d'ondes est construit en deux parties, l'une étant une plaque métallique plane et l'autre étant une plaque métallique en forme de U comportant le redan, la réunion des deux réalisant la cavité du guide d'ondes, et ces deux parties étant isolées par une couche de matériau isolant, les deux faces métallisées de la diode étant respectivement soudées l'une à la plaque métallique plane, et l'autre au redan du guide d'ondes.In an electromagnetic wave switch according to the invention, comprising a rectangular waveguide itself comprising a step providing a ridged space, of determined volume, in which a PIN diode is arranged, the waveguide is constructed in two parts, one being a flat metal plate and the other being a U-shaped metal plate comprising the step, the union of the two forming the cavity of the waveguide, and these two parts being isolated by a layer of insulating material, the two metallized faces of the diode being respectively welded one to the flat metal plate, and the other to the step of the waveguide.

D'autres caractéristiques et avantages de l'invention apparaîtront lors de la description qui suit, illustrée par les figures 2 à 6, qui outre la figure 1 déjà mentionnée, représentent:

  • - la figure 2, une vue en coupe d'un tel commutateur suivant une section droite du guide;
  • - la figure 3, une vue en perspective du commutateur de la figure 2;
  • - la figure 4, une vue en coupe longitudinale du commutateur des figures précédentes;
  • -la figure 5, une variante d'un commutateur selon l'invention vue en coupe et
  • - la figure 6, un dispositif utilisant un commutateur selon l'invention.
Other characteristics and advantages of the invention will appear during the description which follows, illustrated by FIGS. 2 to 6, which, in addition to FIG. 1 already mentioned, represent:
  • - Figure 2, a sectional view of such a switch along a cross section of the guide;
  • - Figure 3, a perspective view of the switch of Figure 2;
  • - Figure 4, a longitudinal sectional view of the switch of the preceding figures;
  • FIG. 5, a variant of a switch according to the invention seen in section and
  • - Figure 6, a device using a switch according to the invention.

La figure 2 représente un commutateur selon l'invention, vu en coupe selon une section droite. Il est réalisé à partir d'un guide d'ondes 7 rectangulaire, construit en deux parties, l'une étant une plaque métallique plane 70 et l'autre étant une plaque métallique 72 en forme de U, la réunion des deux réalisant la cavité du guide d'ondes. Elles sont isolées l'une par rapport à l'autre par une couche de matériau isolant 71. La partie 72 comporte un redan 73 dans sa partie centrale, ménageant dans le guide un espace dit ridgé selon la terminologie anglo-saxonne, espace dans lequel est concentré le champ électrique. Dans cet espace ridgé est disposé un barreau semiconducteur 10 à forte tension de claquage - plusieurs centaines de volts - et à faible résistance thermique, ce barreau ayant un volume identique au volume défini par l'espace ridgé.FIG. 2 represents a switch according to the invention, seen in section along a cross section. It is produced from a rectangular waveguide 7, constructed in two parts, one being a flat metal plate 70 and the other being a metal plate 72 in the shape of a U, the union of the two producing the cavity of the waveguide. They are insulated from each other by a layer of insulating material 71. The part 72 has a step 73 in its central part, providing in the guide a space called ridged according to English terminology, space in which is concentrated the electric field. In this wrinkled space is arranged a semiconductor bar 10 with high breakdown voltage - several hundred volts - and low thermal resistance, this bar having a volume identical to the volume defined by the wrinkled space.

Etant données les dimensions du guide d'ondes fonctionnant en ondes millimétriques, on peut mettre une puce de semiconducteur telle qu'une diode PIN dans l'espace ridgé. Dans un exemple particulier de réalisation, les dimensions de la section droite du guide 7 sont:

  • L, = 2,54 mm et L2 = 1,27 mm

et celles de l'espace ridgé sont:
  • L3 = 0,6 mm et L4 = 0,4 mm.
Given the dimensions of the waveguide operating in millimeter waves, it is possible to place a semiconductor chip such as a PIN diode in the wrinkled space. In a particular embodiment, the dimensions of the cross section of the guide 7 are:
  • L, = 2.54 mm and L 2 = 1.27 mm

and those of the wrinkled space are:
  • L 3 = 0.6 mm and L 4 = 0.4 mm.

La cathode 101 de la diode 10 est reliée au redan 73 tandis que son anode 102 est reliée à l'autre partie 70. Pour polariser la diode, on applique une tension ± V entre ces deux parties.The cathode 101 of the diode 10 is connected to the step 73 while its anode 102 is connected to the other part 70. To bias the diode, a voltage ± V is applied between these two parts.

Ainsi, lorsque la diode est bloquée, le guide, d'une part, peut être considéré comme rempli d'un matériau diélectrique de constante diélectrique ε élevée (ε ~ 12 pour une diode PIN) et d'autre part à des dimensions telles que la propagation d'une onde millimétrique est possible. Dans ce cas, une telle onde est transmise à travers le commutateur.Thus, when the diode is blocked, the guide, on the one hand, can be considered to be filled with a dielectric material of high dielectric constant ε (ε ~ 12 for a PIN diode) and on the other hand to dimensions such as propagation of a millimeter wave is possible. In this case, such a wave is transmitted through the switch.

Par contre, lorsque la diode conduit, elle est équivalente à un court-circuit et l'onde millimétrique incidente est réfléchie par le commutateur.On the other hand, when the diode conducts, it is equivalent to a short circuit and the incident millimeter wave is reflected by the switch.

En ce qui concerne la réalisation pratique, on utilise une diode PIN classique dont on ajuste les dimensions à celles du guide et dont les deux faces sont métallisées. Pour assurer une bonne dissipation thermique, on soude les deux faces métallisées de la diode aux parois du guide.As regards the practical embodiment, a conventional PIN diode is used, the dimensions of which are adjusted to those of the guide and the two faces of which are metallized. To ensure good heat dissipation, the two metallized faces of the diode are welded to the walls of the guide.

La figure 3 représente un commutateur selon l'invention, selon une vue en perspective. Les éléments identiques à ceux de la figure 2 assurent les mêmes fonctions et portent les mêmes références. Entre l'espace ridgé et le guide d'ondes, les transitions sont assurées par des biseaux 9, ou tapers en vocable anglo-saxon, qui sont équivalents à des transformateurs adaptant les discontinuités. Pour compenser en plus ces transitions, la dimension de la diode PIN 10, L5, selon l'axe longitudinal A du guide d'ondes, est un multiple du quart de la longueur d'onde guidée À g à la fréquence centrale de la bande de fonctionnement. De façon préférentielle, cette dimension est égale à 3 À g/4 plutôt qu'à À g/4, car la dimension des diodes PIN utilisées couramment est de l'ordre de 0,6 à 0,7 mm.FIG. 3 represents a switch according to the invention, according to a perspective view. The elements identical to those of FIG. 2 provide the same functions and have the same references. Between the ridged space and the waveguide, the transitions are ensured by bevels 9, or tapers in Anglo-Saxon terms, which are equivalent to transformers adapting the discontinuities. To additionally compensate for these transitions, the dimension of the PIN diode 10, L 5 , along the longitudinal axis A of the waveguide, is a multiple of a quarter of the guided wavelength λ g at the central frequency of the operating band. Preferably, this dimension is equal to 3 A g / 4 rather than A g / 4, since the dimension of the PIN diodes commonly used is of the order of 0.6 to 0.7 mm.

La figure 4 est une vue selon une coupe longitudinale du guide d'ondes 7, comportant les mêmes références que les deux figures précédentes. Y sont portées de plus les dimensions, selon l'axe Δ, de la diode PIN 10 et des biseaux 9.Figure 4 is a view along a longitudinal section of the waveguide 7, having the same references as the two previous figures. The dimensions, along the axis Δ, of the PIN diode 10 and the bevels 9 are also carried there.

Selon l'exemple de réalisation déjà indiqué, les longueurs L5 et L6 prennent les valeurs suivantes:

  • L5 = 0,7 mm et L6 = 16 mm
According to the example of embodiment already indicated, the lengths L 5 and L 6 take the following values:
  • L 5 = 0.7 mm and L 6 = 16 mm

Sur la figure 5 est représentée une réalisation particulière d'un commutateur selon l'invention. Les deux parties 70 et 72, séparées par l'isolant 71, sont vissées ensemble par des vis 15 en nylon par exemple. Afin d'assurer les contacts hyperfréquences, en plus de la couche d'isolant 71, on a creusé un sillon 18 de part et d'autre du guide, à une distance 1 = (2n + 1) 7/4 du guide, et sur toute la longueur du guide, servant de piège hyperfréquence. Ces deux pièges 18, dont la profondeur d est un multiple de λ/4 ramènent un circuit ouvert au niveau de la plaquette isolante, donc ramènent un courtcircuit aux bords 19 du guide d'onde. Ce court-circuit électrique permet de réaliser la continuité au point de vue hyperfréquence tout en étant un isolant au point de vue continu.In Figure 5 is shown a particular embodiment of a switch according to the invention. The two parts 70 and 72, separated by the insulator 71, are screwed together by nylon screws 15 for example. In order to ensure microwave contacts, in addition to the insulating layer 71, a groove 18 has been dug on either side of the guide, at a distance 1 = (2n + 1) 7/4 from the guide, and along the entire length of the guide, serving as a microwave trap. These two traps 18, the depth d of which is a multiple of λ / 4, bring an open circuit at the level of the insulating plate, therefore bring a short-circuit to the edges 19 of the waveguide. This electric short-circuit makes it possible to achieve continuity from the microwave point of view while being an insulator from the continuous point of view.

Ainsi vient d'être décrit un commutateur d'ondes électromagnétiques millimétriques, ayant une bonne tenue en puissance. Par rapport aux dispositifs antérieurs, les éléments parasites du montage sont considérablement réduits et les semiconducteurs utilisés sont des semiconducteurs fonctionnant dans des gammes de fréquences beaucoup plus basses et ayant une forte tension de claquage et une faible résistance thermique.Thus has just been described a millimeter electromagnetic wave switch, having good power handling. Compared to previous devices, the parasitic elements of the assembly are considerably reduced and the semiconductors used are semiconductors operating in much lower frequency ranges and having a high breakdown voltage and a low thermal resistance.

Ce dispositif peut être utilisé dans tous les systèmes où il est nécessaire d'atténuer ou de commuter un signal électromagnétique. Ainsi il peut soit protéger un récepteur en agissant comme un circuit protecteur commandé, soit être associé à un aiguillage pour commuter un signal dans une voie déterminée. C'est ce qui est représenté sur la figure 6: deux commutateurs 20 et 21 sont reliés à une voie d'entrée 22, par l'intermédiaire de deux lignes hyperfréquences 23 de longueur égale à un multiple impair du quart de la longueur d'onde guidée λ g. Lorsque le commutateur 20 est passant, l'autre 21 étant bloqué, un signal entrant par la voie 22 est orienté vers le commutateur 20 et inversement lorsque le commutateur est bloqué, l'autre 21 étant passant.This device can be used in all systems where it is necessary to attenuate or switch an electromagnetic signal. Thus it can either protect a receiver by acting as a controlled protective circuit, or be associated with a switch to switch a signal in a determined channel. This is what is shown in FIG. 6: two switches 20 and 21 are connected to an input channel 22, by means of two microwave lines 23 of length equal to an odd multiple of a quarter of the length of guided wave λ g. When the switch 20 is on, the other 21 being blocked, an incoming signal through channel 22 is directed towards the switch 20 and vice versa when the switch is blocked, the other 21 being on.

Claims (5)

1. A switch for electromagnetic waves comprising a rectangular waveguide (7) in turn comprising a step (73) accommodating a ridged space of determined volume wherein a PIN diode (10) is arranged, characterized in that the waveguide (7) having dimensions permitting the propagation of millimetric waves is constructed in two parts (70 and 72), one being a plane metallic plate (70) and the other being a U-shaped metallic plate (72) comprising the step (73), the union of the two providing the cavity of the waveguide, and the two parts being insulated by a layer of insulating material (71), the two metallized faces of the diode (10) being respectively soldered, one to the plane metallic plate (70) and the other to the step (73) of the guide (7).
2. Switch according to claim 1, characterized in that tapers (9) or impedance transformers ensure the transition between the waveguides (7) and the step (73).
3. Switch according to claim 1, characterized in that the dimension of the PIN diode (10) along the longitudinal axis (A) is a multiple of one fourth of the wavelength (λg) at the center frequency of the operating band.
4. Switch according to claim 1, characterized in that the guide part (72) comprising the step (73) comprises, outside of the guide proper, two grooves (18) on both sides of the axis (A) at a determined distance (1) from the guide, these two grooves being recessed with a determined depth (d) and along the entire length of the switch, thus forming hyperfrequency traps.
5. Switch according to claim 4, characterized in that the distance (1) and the depth (d) are multiples of one fourth of the wavelength (i.) at the center frequency of the operating band.
EP82401514A 1981-08-21 1982-08-10 Microwave switch Expired EP0073165B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT82401514T ATE26506T1 (en) 1981-08-21 1982-08-10 MICROWAVE SWITCH.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8116120 1981-08-21
FR8116120A FR2511812A1 (en) 1981-08-21 1981-08-21 ELECTROMAGNETIC WAVE SWITCH

Publications (2)

Publication Number Publication Date
EP0073165A1 EP0073165A1 (en) 1983-03-02
EP0073165B1 true EP0073165B1 (en) 1987-04-08

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EP82401514A Expired EP0073165B1 (en) 1981-08-21 1982-08-10 Microwave switch

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US (1) US4507632A (en)
EP (1) EP0073165B1 (en)
JP (1) JPS5840901A (en)
AT (1) ATE26506T1 (en)
CA (1) CA1197578A (en)
DE (1) DE3276039D1 (en)
FR (1) FR2511812A1 (en)

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FR2570904B1 (en) * 1984-09-25 1987-01-16 Thomson Csf PROTECTION DEVICE FOR TRANSMITTER OUTPUT
DE3534980A1 (en) * 1985-10-01 1987-04-02 Licentia Gmbh Waveguide switch
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Publication number Publication date
FR2511812B1 (en) 1984-11-30
JPS5840901A (en) 1983-03-10
DE3276039D1 (en) 1987-05-14
EP0073165A1 (en) 1983-03-02
JPS6322721B2 (en) 1988-05-13
FR2511812A1 (en) 1983-02-25
ATE26506T1 (en) 1987-04-15
US4507632A (en) 1985-03-26
CA1197578A (en) 1985-12-03

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