EP0073165A1 - Microwave switch - Google Patents

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Publication number
EP0073165A1
EP0073165A1 EP82401514A EP82401514A EP0073165A1 EP 0073165 A1 EP0073165 A1 EP 0073165A1 EP 82401514 A EP82401514 A EP 82401514A EP 82401514 A EP82401514 A EP 82401514A EP 0073165 A1 EP0073165 A1 EP 0073165A1
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Prior art keywords
waveguide
switch
switch according
guide
pin diode
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EP82401514A
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German (de)
French (fr)
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EP0073165B1 (en
Inventor
Michel Baril
Gilles Sillard
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Thales SA
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Thomson CSF SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the invention relates to an electromagnetic wave switch made from a semiconductor placed in a waveguide and operating for millimeter waves.
  • the aim of such a device is to transmit certain microwave signals without loss of power and to attenuate certain others.
  • FIG. 1 represents a cross section of a rectangular waveguide 1 comprising a PIN diode 2 placed on one of the internal faces 3 of the guide.
  • the bias voltage V of the diode is introduced by a coaxial line 4, which is connected to the housing of the diode by a microwave trap 5 and by a metal bar 6, the trap being separated from the coaxial line by a piece of insulation. 50.
  • microwave switch close to the previous one, and comprising a PIN diode. It operates in mode 2, that is to say that the PIN diode and its circuit have a series resonant circuit when the diode is blocked and a parallel resonant circuit when it conducts.
  • the object of the present invention is a millimeter electromagnetic wave switch, produced as a waveguide, making it possible to avoid the abovementioned drawbacks.
  • the electromagnetic wave switch is constituted by a rectangular waveguide whose dimensions allow the propagation of millimeter waves comprising a step providing a so-called ridged space, of determined volume, in which is placed a bar of material semiconductor with high breakdown voltage and low thermal resistance, the volume of which is identical to that of the wrinkled space.
  • FIG. 2 represents a switch according to the invention, seen in section along a cross section. It is produced from a rectangular waveguide 7, built in two parts, one being a flat metal plate 70 and the other being a metal plate 72 U-shaped, the meeting of the two forming the cavity of the waveguide. They are insulated from each other by a layer of insulating material 71.
  • the part 72 includes a step 73 in its central part, providing in the guide a space called ridged according to English terminology, space in which is concentrated the electric field.
  • a semiconductor bar 10 with high breakdown voltage - several hundred volts - and low thermal resistance, this bar having a volume identical to the volume defined by the wrinkled space.
  • a semiconductor chip such as a PIN diode can be placed in the wrinkled space.
  • the dimensions of the cross section of the guide 7 are: and those of the wrinkled space are:
  • the cathode 101 of the diode 10 is connected to the step 73 while its anode 102 is connected to the other part 70.
  • a voltage ⁇ V is applied between these two parts.
  • the guide when the diode is blocked, the guide, on the one hand, can be considered to be filled with a dielectric material of high dielectric constant e ( ⁇ ⁇ 12 for a PIN diode) and on the other hand to dimensions such as propagation of a millimeter wave is possible. In this case, such a wave is transmitted through the switch.
  • e dielectric constant
  • a conventional PIN diode is used, the dimensions of which are adjusted to those of the guide and the two faces of which are metallized. To ensure good thermal dissipation, the two metallized faces of the diode are welded to the walls of the guide.
  • FIG. 3 represents a switch according to the invention, according to a perspective view.
  • the elements identical to those of FIG. 2 provide the same functions and have the same references.
  • the transitions are ensured by bevels 9, or tapers in Anglo-Saxon terms, which are equivalent to transformers adapting the discontinuities.
  • the dimension of the PIN diode 10, L 5 along the longitudinal axis ⁇ of the waveguide, is a multiple of a quarter of the guided wavelength ⁇ g at the central frequency of the operating band.
  • this dimension is equal to 3 ⁇ g / 4 rather than to ⁇ g / 4, because the dimension of the PIN diodes commonly used is of the order of 0.6 to 0.7 mm.
  • Figure 4 is a view along a longitudinal section of the waveguide 7, having the same references as the two previous figures. The dimensions, along the axis ⁇ , of the PIN diode 10 and the bevels 9 are also carried there.
  • the lengths L 5 and L 6 take the following values:
  • FIG. 5 a particular embodiment of a switch according to the invention.
  • the two parts 70 and 72, separated by the insulator 71, are screwed together by screws 15 of nylon for example.
  • These two traps 18, the depth d of which is a multiple of ⁇ / 4 bring an open circuit to the level of the insulating plate, therefore bring a short circuit to the edges 19 of the waveguide.
  • This electric short-circuit makes it possible to achieve continuity from the microwave point of view while being an insulator from the continuous point of view.
  • This device can be used in all systems where it is necessary to attenuate or switch an electromagnetic signal. Thus it can either protect a receiver by acting as a controlled protective circuit, or be associated with a switch to switch a signal in a determined channel.
  • the switch 20 is on, the other 21 being blocked, an incoming signal through channel 22 is directed towards the switch 20 and vice versa when the switch is blocked, the other 21 being on.

Abstract

Commutateur d'ondes électromagnétiques constitué par un guide d'ondes mouluré (7) associé à une diode PIN (10), remplissant totalement la partie moulurée (8) du guide, ayant une forte tension de claquage et une faible resistance thermique. Application d'un tel commutateur aux ondes électromagnétiques millimétriques.Electromagnetic wave switch constituted by a molded waveguide (7) associated with a PIN diode (10), completely filling the molded part (8) of the guide, having a high breakdown voltage and a low thermal resistance. Application of such a switch to millimeter electromagnetic waves.

Description

L'invention est relative à un commutateur d'ondes électromagnétiques réalisé à partir d'un semiconducteur placé dans un guide d'ondes et fonctionnant pour des ondes millimétriques. Le but d'un tel dispositif est de transmettre sans pertes de puissance certains signaux hyperfréquence et d'en atténuer certains autres.The invention relates to an electromagnetic wave switch made from a semiconductor placed in a waveguide and operating for millimeter waves. The aim of such a device is to transmit certain microwave signals without loss of power and to attenuate certain others.

L'art antérieur fournit des exemples de réalisation de commutateurs hyperfréquence, constitués notamment d'une diode PIN associée à un circuit de polarisation et montée dans un guide d'ondes. La figure 1 représente une section droite d'un guide d'ondes 1 rectangulaire comportant une diode PIN 2 placée sur une des faces internes 3 du guide. La tension de polarisation V de la diode est introduite par une ligne coaxiale 4, qui est reliée au boîtier de la diode par un piège hyperfréquence 5 et par un barreau métallique 6, le piège étant séparé de la ligne coaxiale par un morceau d'isolant 50. Le fonctionnement d'un tel commutateur est le suivant : lorsque la diode est bloquée, elle est équivalente avec son circuit de polarisation à un circuit résonnant parallèle, tandis que lorsqu'elle conduit, elle est équivalente à un circuit résonnant série, laissant ainsi passer le signal hyperfréquence se propageant dans le guide d'ondes, ou l'atténuant.The prior art provides exemplary embodiments of microwave switches, notably consisting of a PIN diode associated with a bias circuit and mounted in a waveguide. FIG. 1 represents a cross section of a rectangular waveguide 1 comprising a PIN diode 2 placed on one of the internal faces 3 of the guide. The bias voltage V of the diode is introduced by a coaxial line 4, which is connected to the housing of the diode by a microwave trap 5 and by a metal bar 6, the trap being separated from the coaxial line by a piece of insulation. 50. The operation of such a switch is as follows: when the diode is blocked, it is equivalent with its bias circuit to a parallel resonant circuit, while when it conducts, it is equivalent to a series resonant circuit, leaving thus pass the microwave signal propagating in the waveguide, or attenuating it.

Il existe un autre type de commutateur hyperfréquence, voisin du précédent, et comportant une diode PIN. Il fonctionne en mode 2, c'est-à-dire que la diode PIN et son circuit présentent un circuit résonnant série lorsque la diode est bloquée et un circuit résonnant parallèle quand elle conduit.There is another type of microwave switch, close to the previous one, and comprising a PIN diode. It operates in mode 2, that is to say that the PIN diode and its circuit have a series resonant circuit when the diode is blocked and a parallel resonant circuit when it conducts.

Deux inconvénients principaux apparaissent lors du fonctionnement de ce genre de commutateur. L'un vient du fait que les boîtiers protégeant les diodes PIN ainsi que les différents éléments comme le barreau métallique qui assure à la fois le montage mécanique et l'arrivée de la polarisation de la diode, sont des , éléments parasites selfiques et/ou capacitifs limitant la bande passante de fonctionnement du commutateur.Two main drawbacks appear when operating this kind of switch. One comes from the fact that the boxes protecting the PIN diodes as well as the various elements such as the metal bar which ensures both the mechanical mounting and the arrival of the polarization of the diode, are, inductive and / or parasitic elements capacitive limiting the operating bandwidth of the switch.

. L'autre inconvénient est dû à l'impossibilité d'utiliser un tel commutateur en ondes millimétriques. En effet, pour le bon fonctionnement du commutateur, il faut une diode PIN ayant une capacité de jonction très faible, ce qui est très difficilement réalisable et ce qui peut entraîner une mauvaise tenue en puissance due à une tension de claquage trop basse et/ou à une mauvaise résistance thermique de la diode. . The other drawback is due to the impossibility of using such a millimeter wave switch. Indeed, for the correct operation of the switch, a PIN diode is required having a very low junction capacity, which is very difficult to achieve and which can cause poor power handling due to a too low breakdown voltage and / or poor thermal resistance of the diode.

L'objet de la présente invention est un commutateur d'ondes électromagnétiques millimétriques, réalisé en guide d'ondes, permettant d'éviter les inconvénients précités.The object of the present invention is a millimeter electromagnetic wave switch, produced as a waveguide, making it possible to avoid the abovementioned drawbacks.

Suivant l'invention le commutateur d'ondes électromagnétiques est constitué par un guide d'ondes rectangulaire dont les dimensions permettent la propagation d'ondes millimétriques comportant un redan ménageant un espace dit ridgé, de volume déterminé, dans lequel est disposé un barreau de matériau semiconducteur à forte tension de claquage et à faible résistance thermique, dont le volume est identique à celui de l'espace ridgé.According to the invention the electromagnetic wave switch is constituted by a rectangular waveguide whose dimensions allow the propagation of millimeter waves comprising a step providing a so-called ridged space, of determined volume, in which is placed a bar of material semiconductor with high breakdown voltage and low thermal resistance, the volume of which is identical to that of the wrinkled space.

D'autres caractéristiques et avantages de l'invention apparaîtront lors de la description qui suit, illustrée par les figures 2 à 6, qui outre la figure 1 déjà mentionnée, représentent :

  • - la figure 2, une vue en coupe d'un tel commutateur suivant une section droite du guide ;
  • - la figure 3, une vue en perspective du commutateur de la figure 2 ;
  • - la figure 4, une vue en coupe longitudinale du commutateur des figures précédentes ;
  • -la figure 5, une variante d'un commutateur selon l'invention vue en coupe et
  • - la figure 6, un dispositif utilisant un commutateur selon l'invention
Other characteristics and advantages of the invention will become apparent from the following description, illustrated by FIGS. 2 to 6, which, in addition to FIG. 1 already mentioned, represent:
  • - Figure 2, a sectional view of such a switch along a cross section of the guide;
  • - Figure 3, a perspective view of the switch of Figure 2;
  • - Figure 4, a longitudinal sectional view of the switch of the preceding figures;
  • FIG. 5, a variant of a switch according to the invention seen in section and
  • - Figure 6, a device using a switch according to the invention

La figure 2 représente un commutateur selon l'invention, vu en coupe selon une section droite. Il est réalisé à partir d'un guide d'ondes 7 rectangulaire, construit en deux parties, l'une étant une plaque métallique plane 70 et l'autre étant une plaque métallique 72 en forme de U, la réunion des deux réalisant la cavité du guide d'ondes. Elles sont isolées l'une par rapport à l'autre par une couche de matériau isolant 71. La partie 72 comporte un redan 73 dans sa partie centrale, ménageant dans le guide un espace dit ridgé selon la terminologie anglo-saxonne, espace dans lequel est concentré le champ électrique. Dans cet espace ridgé est disposé un barreau semiconducteur 10 à forte tension de claquage - plusieurs centaines de volts - et à faible résistance thermique, ce barreau ayant un volume identique au volume défini par l'espace ridgé.FIG. 2 represents a switch according to the invention, seen in section along a cross section. It is produced from a rectangular waveguide 7, built in two parts, one being a flat metal plate 70 and the other being a metal plate 72 U-shaped, the meeting of the two forming the cavity of the waveguide. They are insulated from each other by a layer of insulating material 71. The part 72 includes a step 73 in its central part, providing in the guide a space called ridged according to English terminology, space in which is concentrated the electric field. In this wrinkled space is arranged a semiconductor bar 10 with high breakdown voltage - several hundred volts - and low thermal resistance, this bar having a volume identical to the volume defined by the wrinkled space.

Etant données les dimensions du guide d'ondes fonctionnant en ondes millimétriques, on peut mettre une puce de semiconducteur telle qu'une diode PIN dans l'espace ridgé. Dans un exemple particulier de réalisation, les dimensions de la section droite du guide 7 sont :

Figure imgb0001
et celles de l'espace ridgé sont :
Figure imgb0002
 Given the dimensions of the waveguide operating in millimeter waves, a semiconductor chip such as a PIN diode can be placed in the wrinkled space. In a particular embodiment, the dimensions of the cross section of the guide 7 are:
Figure imgb0001
 and those of the wrinkled space are:
Figure imgb0002

La cathode 101 de la diode 10 est reliée au redan 73 tandis que son anode 102 est reliée à l'autre partie 70. Pour polariser la diode, on applique une tension ±V entre ces deux parties.The cathode 101 of the diode 10 is connected to the step 73 while its anode 102 is connected to the other part 70. To bias the diode, a voltage ± V is applied between these two parts.

Ainsi, lorsque la diode est bloquée, le guide, d'une part, peut être considéré comme rempli d'un matériau diélectrique de constante diélectrique é élevée (ε ~ 12 pour une diode PIN) et d'autre part à des dimensions telles que la propagation d'une onde millimétrique est possible. Dans ce cas, une telle onde est transmise à travers le commutateur.Thus, when the diode is blocked, the guide, on the one hand, can be considered to be filled with a dielectric material of high dielectric constant e (ε ~ 12 for a PIN diode) and on the other hand to dimensions such as propagation of a millimeter wave is possible. In this case, such a wave is transmitted through the switch.

. Par contre, lorsque la diode conduit, elle est équivalente à un court-circuit et l'onde millimétrique incidente est réfléchie par le commutateur.. On the other hand, when the diode conducts, it is equivalent to a short circuit and the incident millimeter wave is reflected by the switch.

En ce qui concerne la réalisation pratique, on utilise une diode PIN classique dont on ajuste les dimensions à celles du guide et dont les deux faces sont métallisées. Pour assurer une bonne dissipation ,thermique, on soude les deux faces métallisées de la diode aux parois du guide.As regards the practical embodiment, a conventional PIN diode is used, the dimensions of which are adjusted to those of the guide and the two faces of which are metallized. To ensure good thermal dissipation, the two metallized faces of the diode are welded to the walls of the guide.

. La figure 3 représente un commutateur selon l'invention, selon une vue en perspective. Les éléments identiques à ceux de la figure 2 assurent les mêmes fonctions et portent les mêmes références. Entre l'espace ridgé et le guide d'ondes, les transitions sont assurées par des biseaux 9, ou tapers en vocable anglo-saxon, qui sont équivalents à des transformateurs adaptant les discontinuités. Pour compenser en plus ces transitions, la dimension de la diode PIN 10, L5, selon l'axe longitudinal Δ du guide d'ondes, est un multiple du quart de la longueur d'onde guidée À g à la fréquence centrale de la bande de fonctionnement. De façon préférentielle, cette dimension est égale à 3λ g/4 plutôt qu'à λ g/4, car la dimension des diodes PIN utilisées couramment est de l'ordre de 0,6 à 0,7 mm.. FIG. 3 represents a switch according to the invention, according to a perspective view. The elements identical to those of FIG. 2 provide the same functions and have the same references. Between the ridged space and the waveguide, the transitions are ensured by bevels 9, or tapers in Anglo-Saxon terms, which are equivalent to transformers adapting the discontinuities. To additionally compensate for these transitions, the dimension of the PIN diode 10, L 5 , along the longitudinal axis Δ of the waveguide, is a multiple of a quarter of the guided wavelength λ g at the central frequency of the operating band. Preferably, this dimension is equal to 3λ g / 4 rather than to λ g / 4, because the dimension of the PIN diodes commonly used is of the order of 0.6 to 0.7 mm.

La figure 4 est une vue selon une coupe longitudinale du guide d'ondes 7, comportant les mêmes références que les deux figures précédentes. Y sont portées de plus les dimensions, selon l'axe Δ, de la diode PIN 10 et des biseaux 9.Figure 4 is a view along a longitudinal section of the waveguide 7, having the same references as the two previous figures. The dimensions, along the axis Δ, of the PIN diode 10 and the bevels 9 are also carried there.

Selon l'exemple de réalisation déjà indiqué, les longueurs L5 et L6 prennent les valeurs suivantes :

Figure imgb0003
According to the example of embodiment already indicated, the lengths L 5 and L 6 take the following values:
Figure imgb0003

Sur la figure 5 est représentée une réalisation particulière d'un commutateur selon l'invention. -Les deux parties 70 et 72, séparées par l'isolant 71, sont vissées ensemble par des vis 15 en nylon par exemple. Afin d'assurer les contacts hyperfréquences, en plus de la couche d'isolant 71, on a creusé un sillon 18 de part et d'autre du guide, à une distance 1 = (2n +1)

Figure imgb0004
du guide, et sur toute la longueur du guide, servant de piège hyperfréquence. Ces deux pièges 18, dont la profondeur d est un multiple de λ/4 ramènent un circuit ouvert au niveau de la plaquette isolante, donc ramènent un court-circuit aux bords 19 du guide d'onde. Ce court-circuit électrique permet de réaliser la continuité au point de vue hyperfréquence tout en étant un isolant au point de vue continu.In Figure 5 is shown a particular embodiment of a switch according to the invention. The two parts 70 and 72, separated by the insulator 71, are screwed together by screws 15 of nylon for example. To ensure microwave contacts, in addition to the insulating layer 71, a groove 18 has been dug on either side of the guide, at a distance 1 = (2n +1)
Figure imgb0004
 of the guide, and over the entire length of the guide, serving as a microwave trap. These two traps 18, the depth d of which is a multiple of λ / 4 bring an open circuit to the level of the insulating plate, therefore bring a short circuit to the edges 19 of the waveguide. This electric short-circuit makes it possible to achieve continuity from the microwave point of view while being an insulator from the continuous point of view.

Ainsi vient d'être décrit un commutateur d'ondes électro- , magnétiques millimétriques, ayant une bonne tenue en puissance. Par rapport aux dispositifs antérieurs, les éléments parasites du montage sont considérablement réduits et les semiconducteurs utilisés sont des semiconducteurs fonctionnant dans des gammes de fréquences beaucoup plus basses et ayant une forte tension de claquage et une faible résistance thermique.Thus has just been described a switch of electro-, magnetic millimeter waves, having good power handling. Compared to previous devices, the parasitic elements of the assembly are considerably reduced and the semiconductors used are semiconductors operating in much lower frequency ranges and having a high breakdown voltage and a low thermal resistance.

Ce dispositif peut être utilisé dans tous les systèmes où il est nécessaire d'atténuer ou de commuter un signal électromagnétique. Ainsi il peut soit protéger un récepteur en agissant comme un circuit protecteur commandé, soit être associé à un aiguillage pour commuter un signal dans une voie déterminée. C'est ce qui est représenté sur la figure 6 : deux commutateurs 20 et 21 sont reliés à une voie d'entrée 22, par l'intermédiaire de deux lignes hyperfréquences 23 de longueur égale à un multiple impair du quart de la longueur d'onde guidée À g. Lorsque le commutateur 20 est passant, l'autre 21 étant bloqué, un signal entrant par la voie 22 est orienté vers le commutateur 20 et inversement lorsque le commutateur est bloqué, l'autre 21 étant passant.This device can be used in all systems where it is necessary to attenuate or switch an electromagnetic signal. Thus it can either protect a receiver by acting as a controlled protective circuit, or be associated with a switch to switch a signal in a determined channel. This is what is shown in FIG. 6: two switches 20 and 21 are connected to an input channel 22, by means of two microwave lines 23 of length equal to an odd multiple of a quarter of the length of guided wave To g. When the switch 20 is on, the other 21 being blocked, an incoming signal through channel 22 is directed towards the switch 20 and vice versa when the switch is blocked, the other 21 being on.

Claims (7)

1. Commutateur d'ondes électromagnétiques constitué par un guide d'ondes rectangulaire d'axe longitudinal (Δ) associé à un élément semiconducteur, caractérisé en ce que le guide d'ondes (7), dont les dimensions permettent la propagation d'ondes millimétriques, comporte un redan (73) ménageant un espace ridgé, de volume déterminé, dans lequel est disposé un barreau de matériau semiconducteur à forte tension de claquage et à faible résistance thermique, dont le volume est identique à celui de l'espace ridgé.1. Electromagnetic wave switch constituted by a rectangular waveguide with a longitudinal axis (Δ) associated with a semiconductor element, characterized in that the waveguide (7), the dimensions of which allow the propagation of waves millimeter, comprises a step (73) providing a wrinkled space, of determined volume, in which is disposed a bar of semiconductor material with high breakdown voltage and low thermal resistance, the volume of which is identical to that of the wrought space. 2. Commutateur selon la revendication 1, caractérisé en ce que le guide d'ondes (7) est construit en deux parties (70 et 72), l'une étant une plaque métallique plane (70) et l'autre étant une plaque métallique (72) en forme de U comportant le redan (73), la réunion des deux réalisant la cavité du guide d'ondes, et ces deux parties étant isolées par une couche de matériau isolant (71).2. Switch according to claim 1, characterized in that the waveguide (7) is constructed in two parts (70 and 72), one being a flat metal plate (70) and the other being a metal plate (72) U-shaped comprising the step (73), the meeting of the two forming the cavity of the waveguide, and these two parts being insulated by a layer of insulating material (71). 3. Commutateur selon la revendication 1, caractérisé en ce que le barreau de semiconducteur est une diode PIN (10) dont les deux faces métallisées (101 et 102) sont respectivement soudées l'une à la partie (70) et l'autre au redan (73) du guide (7).3. Switch according to claim 1, characterized in that the semiconductor bar is a PIN diode (10) whose two metallized faces (101 and 102) are respectively welded one to the part (70) and the other to the step (73) of the guide (7). 4. Commutateur selon la revendication 3, caractérisé en ce que des biseaux (9) ou transformateurs d'impédance assurent les transitions entre le guide d'ondes (7) et le redan (73).4. Switch according to claim 3, characterized in that bevels (9) or impedance transformers ensure the transitions between the waveguide (7) and the step (73). - 5. Commutateur selon la revendication 3, caractérisé en ce que la dimension de la diode PIN (10) selon l'axe longitudinal (d ) est un multiple du quart de la longueur d'onde (λ g) à la fréquence centrale de la bande de fonctionnement.- 5. Switch according to claim 3, characterized in that the dimension of the PIN diode (10) along the longitudinal axis (d) is a multiple of a quarter of the wavelength (λ g) at the center frequency of the operating band. 6. Commutateur selon la revendication 2, caractérisé en ce que la partie (72) du guide comportant le redan (73) comporte, à l'extérieur du guide proprement dit, deux sillons (18) de part et d'autre de l'axe (Δ), à une distance (1) déterminée du guide, ces deux sillons étant creusés sur une profondeur (d) déterminée et sur , toute la longueur du commutateur, servant ainsi de pièges hyperfréquences.6. Switch according to claim 2, characterized in that the part (72) of the guide comprising the step (73) comprises, outside the guide itself, two grooves (18) on either side of the axis (Δ), at a determined distance (1) from the guide, these two grooves being dug to a determined depth (d) and over the entire length of the switch, thus serving as microwave traps. 7. Commutateur selon la revendication 6, caractérisé en ce que la distance (1) et la profondeur (d) sont des multiples du quart de la longueur d'onde (λ) à la fréquence centrale de la bande de fonctionnement.7. Switch according to claim 6, characterized in that the distance (1) and the depth (d) are multiples of a quarter of the wavelength (λ) at the central frequency of the operating band.
EP82401514A 1981-08-21 1982-08-10 Microwave switch Expired EP0073165B1 (en)

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AT82401514T ATE26506T1 (en) 1981-08-21 1982-08-10 MICROWAVE SWITCH.

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FR8116120 1981-08-21
FR8116120A FR2511812A1 (en) 1981-08-21 1981-08-21 ELECTROMAGNETIC WAVE SWITCH

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EP0073165A1 true EP0073165A1 (en) 1983-03-02
EP0073165B1 EP0073165B1 (en) 1987-04-08

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JP (1) JPS5840901A (en)
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CA (1) CA1197578A (en)
DE (1) DE3276039D1 (en)
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126811A1 (en) * 1983-05-20 1984-12-05 The Marconi Company Limited Microwave switch
FR2552935A1 (en) * 1983-09-30 1985-04-05 Thomson Csf IMPROVEMENT TO MILLIMETER ELECTROMAGNETIC WAVE SWITCHES
FR2570904A1 (en) * 1984-09-25 1986-03-28 Thomson Csf PROTECTIVE DEVICE FOR TRANSMITTER OUTPUT
US10802375B2 (en) 2017-09-15 2020-10-13 Samsung Electronics Co., Ltd. Optically-controlled switch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613839A (en) * 1984-08-09 1986-09-23 Itt Corporation Machined waveguide
DE3534980A1 (en) * 1985-10-01 1987-04-02 Licentia Gmbh Waveguide switch

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR942848A (en) * 1941-09-12 1949-02-18 Emi Ltd Improvements in means of preventing or reducing high frequency energy losses
FR944067A (en) * 1943-06-11 1949-03-25 Emi Ltd High frequency electrical device comprising a hermetic enclosure
US2951217A (en) * 1956-12-31 1960-08-30 Hughes Aircraft Co Waveguide motional joint
US3050702A (en) * 1960-12-28 1962-08-21 Bell Telephone Labor Inc Capacitively loaded waveguide
US3346825A (en) * 1965-06-28 1967-10-10 Ass Elect Ind Waveguide switch with semiconductor in thermal contact with waveguide walls
FR2185866A1 (en) * 1972-05-23 1974-01-04 Japan Broadcasting Corp

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB902128A (en) * 1959-08-19 1962-07-25 Decca Ltd Improvements in or relating to waveguide couplings
US3553610A (en) * 1969-05-23 1971-01-05 Bell Telephone Labor Inc Diode mount having integral resonant circuit
GB1318049A (en) * 1970-07-08 1973-05-23 Rank Organisation Ltd Waveguides
US3710286A (en) * 1971-07-28 1973-01-09 Hitachi Ltd Control of microwave power by applying stress to gadolinium molydate single crystal
US3701055A (en) * 1972-01-26 1972-10-24 Motorola Inc Ka-band solid-state switching circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR942848A (en) * 1941-09-12 1949-02-18 Emi Ltd Improvements in means of preventing or reducing high frequency energy losses
FR944067A (en) * 1943-06-11 1949-03-25 Emi Ltd High frequency electrical device comprising a hermetic enclosure
US2951217A (en) * 1956-12-31 1960-08-30 Hughes Aircraft Co Waveguide motional joint
US3050702A (en) * 1960-12-28 1962-08-21 Bell Telephone Labor Inc Capacitively loaded waveguide
US3346825A (en) * 1965-06-28 1967-10-10 Ass Elect Ind Waveguide switch with semiconductor in thermal contact with waveguide walls
FR2185866A1 (en) * 1972-05-23 1974-01-04 Japan Broadcasting Corp

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1979 IEEE MTT-S INTERNATIONAL MICRO-WAVE SYMPOSIUM, 1979, pages 249-252, IEEE, New York (USA); *
IRE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. vol. MTT-10, no. 1, janvier 1962, pages 41-50, New York (USA); *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126811A1 (en) * 1983-05-20 1984-12-05 The Marconi Company Limited Microwave switch
FR2552935A1 (en) * 1983-09-30 1985-04-05 Thomson Csf IMPROVEMENT TO MILLIMETER ELECTROMAGNETIC WAVE SWITCHES
EP0136941A2 (en) * 1983-09-30 1985-04-10 Thomson-Csf Millimeter-wave switch
EP0136941A3 (en) * 1983-09-30 1985-07-10 Thomson-Csf Millimeter-wave switch
US4660008A (en) * 1983-09-30 1987-04-21 Thomson-Csf Pin diode switch mounted in a ridge waveguide
FR2570904A1 (en) * 1984-09-25 1986-03-28 Thomson Csf PROTECTIVE DEVICE FOR TRANSMITTER OUTPUT
EP0176440A1 (en) * 1984-09-25 1986-04-02 Thomson-Csf Protection device for a transmitter output
US10802375B2 (en) 2017-09-15 2020-10-13 Samsung Electronics Co., Ltd. Optically-controlled switch

Also Published As

Publication number Publication date
CA1197578A (en) 1985-12-03
EP0073165B1 (en) 1987-04-08
JPS6322721B2 (en) 1988-05-13
FR2511812B1 (en) 1984-11-30
US4507632A (en) 1985-03-26
JPS5840901A (en) 1983-03-10
FR2511812A1 (en) 1983-02-25
ATE26506T1 (en) 1987-04-15
DE3276039D1 (en) 1987-05-14

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