EP0074295B1 - Passiver Mikrowellenduplexer mit Halbleitern - Google Patents

Passiver Mikrowellenduplexer mit Halbleitern Download PDF

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Publication number
EP0074295B1
EP0074295B1 EP82401518A EP82401518A EP0074295B1 EP 0074295 B1 EP0074295 B1 EP 0074295B1 EP 82401518 A EP82401518 A EP 82401518A EP 82401518 A EP82401518 A EP 82401518A EP 0074295 B1 EP0074295 B1 EP 0074295B1
Authority
EP
European Patent Office
Prior art keywords
duplexer according
duplexer
grid
resonant slots
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82401518A
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English (en)
French (fr)
Other versions
EP0074295A1 (de
Inventor
Gilles Sillard
Michel Baril
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to AT82401518T priority Critical patent/ATE16332T1/de
Publication of EP0074295A1 publication Critical patent/EP0074295A1/de
Application granted granted Critical
Publication of EP0074295B1 publication Critical patent/EP0074295B1/de
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q25/00—Antennas or antenna systems providing at least two radiating patterns
    • H01Q25/007—Antennas or antenna systems providing at least two radiating patterns using two or more primary active elements in the focal region of a focusing device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures

Definitions

  • the invention relates to a passive semiconductor electromagnetic wave duplexer.
  • the duplexer therefore plays the role of a switch isolating the receiver during transmission or of a neighboring powerful transmission and opening the way when weak signals are received by the antenna.
  • a first type of duplexer represented in FIG. 1 consists of two identical limiters 1 inserted between two 3dB couplers 21, 22, each limiter 1 being on for weak signals but reflecting for high power signals.
  • the first coupler 21 is connected, at the input, on the one hand to the transmitter 3 and on the other hand to the antenna 4, while its outputs each lead to one of the two limiters 1. They themselves are connected to the inputs of the second coupler 22, the outputs of which are connected respectively to the radar receiver 5 and to a dissipating load 6.
  • the limiters 1 send it back to the antenna 4 while they pass weak signals received at reception.
  • a second type of duplexer comprising a non-reciprocal ferrite device, operates on the following principle: the signal from the transmitter is directed to the antenna. and any signal received by the antenna must be directed to the receiver, whatever its power.
  • FIG. 2a shows such a duplexer comprising two devices with differential phase shift 74 and 75, the operation of which is as follows: for an initial signal coming from the transmitter 7 and passing through a coupler 71 causing a phase difference of 111/2 between channels 72 and 73, the ferrite device with differential phase shift 74 out of 11/2 + ⁇ pu the signal from channel 72 while the other ferrite device 75 out of ⁇ the signal from channel 73.
  • FIG. 2b it shows a duplexer where the non-reciprocal device is a three-way circulator 8.
  • the non-reciprocal device is a three-way circulator 8.
  • this type of duplexer an additional limiting cell in the reception channel, this cell being constituted either by a gas TR tube, the lifetime of which is fairly limited, or by ferrite or diode devices.
  • duplexers do not work well with millimeter waves, because the limitation cells described either do not exist for such waves, this is the case for TR tubes, or n ' do not have a good power handling, this is the case of existing diodes mounted in conventional structures.
  • the aim of the present invention is to solve these difficulties by producing a passive semiconductor duplexer for electromagnetic waves, comprising a first horn, connected to the radar transmitter and with the axis of propagation ⁇ 1 a plane circular grid, reflecting or transparent as a function of the power of the incident signals and inclined at 45 ° relative to the axis ⁇ 1 , and a second horn connected to the receiver and of propagation axis 2 orthogonal to the axis ⁇ 1 .
  • the grid consists of a metallized dielectric or semiconductor disc on one side, comprising a network of resonant slots provided with at least one diode, this grid being transparent for weak signals and reflective for high power signals.
  • the duplexer according to the invention comprises several parallel grids.
  • FIG. 3 shows the diagram of a duplexer according to the invention. It includes a first horn 9 associated with the radar transmitter 10, sending millimeter electromagnetic waves on a grid 11, a circular plane whose diameter is compatible with millimeter wave operation, and inclined at 45 ° relative to the axis ⁇ 1 , for propagation of the horn 9. It also includes a second horn 12 associated with the radar receiver 13, the propagation axis A 2 of which is orthogonal to the axis ⁇ 1 , and by a transmitter-receiver antenna 14.
  • the flat grid 11 (FIG. 4) has a reflecting or transparent power depending on the power of the incident signals, in other words, it is completely reflective for the signals of high power emitted by the transmitter 10 and completely transparent for the weak signals received by the antenna 14. It consists of a disc either dielectric or semiconductor, but in both cases metallized on one side 15. The metallization of this face creates a network of resonant slots 16, as shown in FIG. 4, each provided with at least one diode 17. When the disk is in dielectric, the diodes are transferred and then connected to the two opposite edges of the slot. When the disc is made of semiconductor material, the diodes 17 are produced directly on the disc.
  • the duplexer thus produced operates in the following manner: the radar transmitter 10 sends a high energy radar signal, via the horn 9 which directs it to the grid 11. Receiving this strong signal, the diodes 17 behave like a short-circuit and the slot-diode assembly is out of tune, thus making the grid 11 reflective. The grid 11 therefore sends the radar signal to the antenna 14 which in turn reflects it towards space, completely protecting the radar receiver 13.
  • the antenna 14 when the antenna 14 receives a low power signal, it directs it towards the gate 11.
  • the diodes 17 are equivalent to capacitances and the slot-diode assembly is adapted to resonate at frequencies of use. So that the network of resonant slots which constitutes the grid 11 is passing for the low level signal, which is well received by the radar receiver 13 via the horn 12.
  • the shape of the resonant slots 17 can be rectangular (FIG. 5a), oval (FIG. 5b) or even have a constriction 18 in its middle (FIG. 5c).
  • the power of the microwave signal distributed over the entire grid by means of the horn 9 or the antenna 14, is relatively low on each slot, therefore on each diode, making it possible to obtain good power handling.
  • This behavior can also be considerably improved by connecting, between the two edges of each slot, at least one pair of diode 19, of the same polarity mounted in shunt head to tail in the same plane as shown in Figures 6a, 6b and 6c.
  • it is either one or the other diode 19 which conducts, protecting the other diode by limiting the voltage applied to its terminals.
  • FIG. 6 shows such an arrangement in the form of the resonant slots 16.
  • a network of resonant slots 20 in the form of a cross is produced as shown in FIG. 7, each arm 22 and 23 acting like a simple slot for one of the two polarizations.
  • the diodes 21 are placed two by two head to tail, but not entirely in the same plane, since they are separated by the width of the other arm.
  • a final improvement relating to the width of the bandwidth of the system, can be made by placing several grids, identical to that already described, parallel to each other so as to constitute a response filter by Tchebischeff or Butterworth for example. .
  • the diameter of the grid, the number and the shape of the resonant slots are determined by the characteristics of the diodes, the polarization and the power of the microwave signal to be processed.
  • the duplexer which has just been described, the duplexing and the protection of the radar receiver against all the high power microwave signals are ensured, these signals being situated in the millimeter wave range.
  • This device has the advantage of being passive and of having good power handling because it is entirely distributed over a large number of diodes, which are moreover easily achievable and can be integrated into the grid.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Waveguide Aerials (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Transceivers (AREA)
  • Details Of Aerials (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Burglar Alarm Systems (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Claims (10)

1. Passiver Halbleiter-Duplexer für elektromagnetische Wellen in einem Radarsystem, das einen Sender (10) umfaßt, welcher eine Antenne (14) anstrahlt, die ihrerseits die von einem Ziel ausgehenden elektromagnetischen Signale zu einem Empfänger (13) umlenkt, dadurch gekennzeichnet, daß der Sender und der Empfänger im Bereich der Millimeterwellen arbeiten und daß er ein erstes Horn (9), welches an den Sender (10) angeschlossen ist und dessen Ausbreitungsachse (A,) ist, eine ebene kreisrunde Gitterscheibe (11), die in Abhängigkeit von der Leistung der ankommenden Signale reflektierend oder durchlässig ist und um 45° gegen die Achse (A,) geneigt ist, sowie ein zweites Horn (12) umfaßt, das an den Empfänger (13) angeschlossen ist und dessen Ausbreitungsachse (A2) senkrecht zur Achse (Δ1) des ersten Hornes (9) ist.
2. Duplexer nach Anspruch 1, dadurch gekennzeichnet, daß die Gitterscheibe (11) für elektromagnetische Signale von geringer Leistung vollständig durchlässig und für Signale von hoher Leistung vollständig reflektierend ist.
3. Duplexer nach Anspruch 2, dadurch gekennzeichnet, daß die Gitterscheibe (11) aus einer dielektrischen Scheibe gebildet ist, welche auf einer Fläche (15) metallisiert ist und ein Gitter von Resonanzschlitzen (16) aufweist, die jeweils mit wenigstens einer Diode (17) ausgestattet sind.
4. Duplexer nach Anspruch 2, dadurch gekennzeichnet, daß die Gitterscheibe (11) durch eine Halbleiterscheibe gebildet ist, die auf einer Fläche (15) metallisiert ist und ein Gitter aus Resonanzschlitzen (16) umfaßt, die mit wenigstens einer Diode (17) ausgestattet sind, welche direkt in dem Halbleiter gebildet ist.
5. Duplexer nach einem der Ansprüche 3 und 4, dadurch gekennzeichnet, daß die Resonanzschlitze (16) mit wenigstens einem Diodenpaar (19) für gleiche Polarität versehen sind, welche mit entgegengesetzter Polung als Nebenschluß in derselben Ebene angebracht sind.
6. Duplexer nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Resonanzschlitze (16) eine rechtwinklige Form aufweisen, die an die Polarisation des zu verarbeitenden Radarsignals angepaßt ist.
7. Duplexer nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Resonanzschlitze (16) eine ovale Form besitzen.
8. Duplexer nach den Ansprüchen 1 bis 5, dadurch gekennzeichnet, daß die Resonanzschlitze (16) eine Verengung (18) in ihrer Mitte aufweisen.
9. Duplexer nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Resonanzschlitze 20 kreuzförmig sind und mit vier Dioden 21 versehen sind, die zu zweit mit entgegengesetzter Polung angeordnet sind.
10. Duplexer nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, daß er wenigstens zwei parallele Gitterscheiben umfaßt, die durch einen solchen Abstand voneinander getrennt sind, daß sie insgesamt ein Filter mit Tchebischeff- oder Butterworth-Charakteristik ergeben.
EP82401518A 1981-08-28 1982-08-10 Passiver Mikrowellenduplexer mit Halbleitern Expired EP0074295B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT82401518T ATE16332T1 (de) 1981-08-28 1982-08-10 Passiver mikrowellenduplexer mit halbleitern.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8116467 1981-08-28
FR8116467A FR2512281B1 (de) 1981-08-28 1981-08-28

Publications (2)

Publication Number Publication Date
EP0074295A1 EP0074295A1 (de) 1983-03-16
EP0074295B1 true EP0074295B1 (de) 1985-10-30

Family

ID=9261748

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82401518A Expired EP0074295B1 (de) 1981-08-28 1982-08-10 Passiver Mikrowellenduplexer mit Halbleitern

Country Status (7)

Country Link
US (1) US4574288A (de)
EP (1) EP0074295B1 (de)
JP (1) JPS5843601A (de)
AT (1) ATE16332T1 (de)
CA (1) CA1202105A (de)
DE (1) DE3267174D1 (de)
FR (1) FR2512281B1 (de)

Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
US5245352A (en) * 1982-09-30 1993-09-14 The Boeing Company Threshold sensitive low visibility reflecting surface
US4684954A (en) * 1985-08-19 1987-08-04 Radant Technologies, Inc. Electromagnetic energy shield
US6747607B1 (en) * 1988-02-12 2004-06-08 The Directv Group, Inc. Radiation power limiter
JPH0711002Y2 (ja) * 1988-08-10 1995-03-15 株式会社ユニシアジェックス 液体ポンプの流量制御弁
US5594456A (en) * 1994-09-07 1997-01-14 Patriot Scientific Corporation Gas tube RF antenna
US5990837A (en) * 1994-09-07 1999-11-23 Asi Rugged gas tube RF cellular antenna
US5592186A (en) * 1995-03-02 1997-01-07 Northrop Grumman Corporation Sectional filter assembly
JPH0951293A (ja) * 1995-05-30 1997-02-18 Matsushita Electric Ind Co Ltd 室内無線通信システム
US6369763B1 (en) 2000-04-05 2002-04-09 Asi Technology Corporation Reconfigurable plasma antenna
US6624719B1 (en) 2000-04-05 2003-09-23 Asi Technology Corporation Reconfigurable electromagnetic waveguide
US6812895B2 (en) 2000-04-05 2004-11-02 Markland Technologies, Inc. Reconfigurable electromagnetic plasma waveguide used as a phase shifter and a horn antenna
US6876330B2 (en) * 2002-07-17 2005-04-05 Markland Technologies, Inc. Reconfigurable antennas
US6710746B1 (en) 2002-09-30 2004-03-23 Markland Technologies, Inc. Antenna having reconfigurable length
US11424525B2 (en) 2020-10-19 2022-08-23 Wi-LAN Research Inc. Duplexers and related devices for 5G/6G and subsequent protocols and for mm-wave and terahertz applications

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US2761137A (en) * 1946-01-05 1956-08-28 Lester C Van Atta Solid dielectric waveguide with metal plating
GB756381A (en) * 1953-12-09 1956-09-05 Emi Ltd Improvements in or relating to slot aerials
US2982960A (en) * 1958-08-29 1961-05-02 Hughes Aircraft Co Arbitrarily polarized slot radiator
GB1047471A (de) * 1962-05-03 1900-01-01
US3274601A (en) * 1962-12-12 1966-09-20 Blass Antenna Electronics Corp Antenna system with electronic scanning means
US3245008A (en) * 1963-02-27 1966-04-05 Gen Electric Gas tube reflective surface ionizable by high energy electromagnetic waves
US3484784A (en) * 1963-11-05 1969-12-16 Raytheon Co Antenna array duplexing system
US3317860A (en) * 1964-04-20 1967-05-02 Robert V Garver Diode limiter
FR2133169A5 (de) * 1971-04-09 1972-11-24 Thomson Csf
US3969729A (en) * 1975-03-17 1976-07-13 International Telephone And Telegraph Corporation Network-fed phased array antenna system with intrinsic RF phase shift capability
FR2458153A1 (fr) * 1979-05-31 1980-12-26 Thomson Csf Limiteur passif d'ondes electromagnetiques et duplexeur constitue a l'aide d'un tel limiteur

Also Published As

Publication number Publication date
FR2512281A1 (de) 1983-03-04
FR2512281B1 (de) 1983-10-28
DE3267174D1 (en) 1985-12-05
ATE16332T1 (de) 1985-11-15
US4574288A (en) 1986-03-04
CA1202105A (en) 1986-03-18
EP0074295A1 (de) 1983-03-16
JPS5843601A (ja) 1983-03-14
JPH0249561B2 (de) 1990-10-30

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