EP0061952A1 - Hyperfrequenz-Oszillator mit einem dielektrischen Resonator vom kompakthybriden Schaltungs-Typ - Google Patents

Hyperfrequenz-Oszillator mit einem dielektrischen Resonator vom kompakthybriden Schaltungs-Typ Download PDF

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Publication number
EP0061952A1
EP0061952A1 EP82400458A EP82400458A EP0061952A1 EP 0061952 A1 EP0061952 A1 EP 0061952A1 EP 82400458 A EP82400458 A EP 82400458A EP 82400458 A EP82400458 A EP 82400458A EP 0061952 A1 EP0061952 A1 EP 0061952A1
Authority
EP
European Patent Office
Prior art keywords
transistor
substrate
dielectric resonator
etched
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP82400458A
Other languages
English (en)
French (fr)
Inventor
Alain Bert
Didier Kaminsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of EP0061952A1 publication Critical patent/EP0061952A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
    • H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
    • H03B5/1876—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0024—Structural aspects of oscillators including parallel striplines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device

Definitions

  • the invention relates to very high frequency and high stability oscillators using an active element coupled by a transmission line to a dielectric resonator with a very low temperature coefficient.
  • the invention tends to avoid this last drawback by proposing an easier to manufacture embodiment, while reconciling the requirements of stability both in frequency and in temperature, of compactness and of low cost price, thanks to the use of elements. mass produced.
  • the microwave oscillator of the dielectric resonator type comprises a transistor which can be either bipolar or field effect, and a metallized insulating substrate on one side forming a ground plane and carrying on the other side two transmission lines of the type microstrip, one of which is coupled to a dielectric resonator. It is characterized in that the ground plane extends beyond the substrate by forming a projection situated at the same level as the etched bands of the transmission lines and close to the ends thereof, the transistor having an electrode welded to ground at a point , located on said projection and two other electrodes connected to the respective ends of the two transmission lines.
  • the substrate used to constitute the transmission lines of the "microstrip" type 2 and 3 is produced in the form of a layer 1 of alumina lining the bottom of a rectangular conducting tank 4, having a raised base forming a projection 41 along one of the internal edges of the tank.
  • a cover (not shown) can be added to close the tank, notches 42 and 43 in the edge facilitating the connection of lines 2 and 3 with the polarization and / or power sources and the load of use.
  • connections are made with the sources and the load using passages passing through the tank.
  • the transistor 10 represented by a simple rectangle, is placed on the projection 41. It could be soldered upside down.
  • the transistor being mounted upright, on its support 101 (FIG. 3) of the L.I.D. type. (from the leadless inverted device), the reverse welding must be understood with regard to the assembly of the support 101 and of the transistor 10.
  • the transmission line 2 is slightly bent in order to reduce the size of the oscillator assembly. It constitutes, with its auxiliary elements (50, 51, 52 and 53) a device intended to promote a predetermined oscillation frequency fixed by the resonance frequency of the element 50.
  • the element 50 is a resonator constituted for example ( FIG. 5) by a cylindrical ceramic section with a high relative dielectric constant, ie 35 to 40, having low losses at very high frequency and good temperature stability.
  • the formula of the material constituting the resonator 50 is for example the following: in which x is between 0.2 and 0.4.
  • the rules for positioning the resonator 50 are conventional.
  • the propagation line elements 52 and 53 constitute an example of a possible solution, represented in FIG. 5.
  • the transmission line 2 connected to the gate of the field effect transistor, ends, on the side opposite this gate, at a resistive load 51 beyond which there is a line element 52 "quarter wave".
  • All the wavelengths in question relate to propagation in the dielectric medium of the microstrip type lines etched on the substrate, ie the alumina layer 1.
  • the resonator 50 is placed near the line 2 at a distance making it possible to maximize the output power and centered on an axis XX perpendicular to the microstrip.
  • a square 53 formed of 2 "quarter-wave" elements A and B, has its element A arranged along the axis XX.
  • the lug 35 is a microstrip line element perpendicular to the general direction of the line 3. Its width "e” and its length "1" are adjusted by trial and error so as to obtain the maximum power on the side of use.
  • the length of the lug is generally less than a quarter of the wavelength, thus achieving a capacity at the connection of the lug on line 3.
  • the operating resistor 38 is conventionally decoupled from the DC supply voltage (applied at point 39) thanks to an inductor 36 and a capacitor 37.
  • the transmission line 2 is decoupled, on its "high frequency" return to the ground of the tank 4 by a capacitor 54 and an inductor 55, the grid polarization being applied at point 56.
  • the transmission lines 2 and 3 are coupled by an arrangement of the interdigitated type.
  • the neighboring edges of lines 2 and 3, in the vicinity of the transistor, are cut according to crenellated profiles which fit together.
  • the mounting of the transistor is then of the "common source” type with capacitive coupling. You can also swap source and drain (mounting in common drain).
  • bracket 53 is placed differently. Indeed branch A is parallel to line 2 instead of being perpendicular to it and branch B is the farthest from the axis XX and not the closest. In addition, the square is displaced by a quarter of a wavelength towards the end of the line 2. The load 51 and the line element 52 remain unchanged.
  • the value of the resistor 51 is adjusted so that the oscillator is stable in the absence of a dielectric resonator. Then the bracket 53 is placed so as to produce a rejection filter for the frequencies situated on either side of the chosen oscillation frequency (that of the resonator 50). Finally, the resonator 50 is placed in a plane (diametral plane passing through the axis XX) where the rejection filter brings back a short circuit.
  • the resistor 51 is grounded by a zero or low impedance on either side of the chosen oscillation frequency (that of the resonator 50) for which this impedance becomes infinite.
  • the resonator is placed at a quarter wavelength of the resistor 51.
  • the insulating substrate supporting the lines. transmission can be achieved with dielectrics other than pure alumina, in particular silica or a combination of glass and polytetrafluoroethylene (teflon).
  • the transistor field effect or bipolar
  • the transistor can be used in the naked state, or mounted upright on a box. without cover, which is used as a handling support to facilitate reverse welding.

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
EP82400458A 1981-03-27 1982-03-12 Hyperfrequenz-Oszillator mit einem dielektrischen Resonator vom kompakthybriden Schaltungs-Typ Withdrawn EP0061952A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8106185A FR2502865B1 (de) 1981-03-27 1981-03-27
FR8106185 1981-03-27

Publications (1)

Publication Number Publication Date
EP0061952A1 true EP0061952A1 (de) 1982-10-06

Family

ID=9256712

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82400458A Withdrawn EP0061952A1 (de) 1981-03-27 1982-03-12 Hyperfrequenz-Oszillator mit einem dielektrischen Resonator vom kompakthybriden Schaltungs-Typ

Country Status (5)

Country Link
US (1) US4481486A (de)
EP (1) EP0061952A1 (de)
JP (1) JPS57170604A (de)
CA (1) CA1177581A (de)
FR (1) FR2502865B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129251A1 (de) * 1983-06-21 1984-12-27 Siemens Aktiengesellschaft Streifenleitungsdopplerradar
EP0600118A1 (de) * 1992-12-01 1994-06-08 Siemens Aktiengesellschaft Spannungsgesteuerter Mikrowellen-Oszillator

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1184920B (it) * 1985-03-22 1987-10-28 Cselt Centro Studi Lab Telecom Oscillatore a microonde integrato
US5204641A (en) * 1992-03-11 1993-04-20 Space Systems/Loral, Inc. Conducting plane resonator stabilized oscillator
SE9202505L (sv) * 1992-09-01 1994-03-02 Televerket Kombination av hybridring och dielektrisk resonator
DE102015219651A1 (de) * 2015-10-09 2017-04-13 Clariant International Ltd. Zusammensetzungen enthaltend Zuckeramin und Fettsäure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382797A1 (fr) * 1977-03-01 1978-09-29 Western Electric Co Circuit oscillateur pour hyperfrequences
DE2837817A1 (de) * 1977-09-02 1979-03-08 Fujitsu Ltd Vorspannungsschaltung
EP0009435A2 (de) * 1978-09-15 1980-04-02 Thomson-Csf Stabilisierte Hochfrequenz-Festkörperoszillator-Vorrichtung
DE3007581A1 (de) * 1979-03-01 1980-09-04 Murata Manufacturing Co Oszillator mit einem dielektrischen resonator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047764B2 (ja) * 1977-01-21 1985-10-23 ソニー株式会社 集積回路化マイクロ波発振器
JPS6036122B2 (ja) * 1979-03-01 1985-08-19 株式会社村田製作所 発振器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382797A1 (fr) * 1977-03-01 1978-09-29 Western Electric Co Circuit oscillateur pour hyperfrequences
DE2837817A1 (de) * 1977-09-02 1979-03-08 Fujitsu Ltd Vorspannungsschaltung
EP0009435A2 (de) * 1978-09-15 1980-04-02 Thomson-Csf Stabilisierte Hochfrequenz-Festkörperoszillator-Vorrichtung
DE3007581A1 (de) * 1979-03-01 1980-09-04 Murata Manufacturing Co Oszillator mit einem dielektrischen resonator

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
1979 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, 1979, NEW YORK (US) K. MISHIMA et al.: "FM noise of transmission-type injection-locked GaAs FET oscillators and amplifiers" pages 194-196 *
1979 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, 1979, NEW YORK (US) T. SAITO et al.: "A 6 GHz highly stabilized GaAs FET oscillator using a dielectric resonator" pages 197-199 *
NEC RESEARCH & DEVELOPMENT, no. 45, avril 1977, TOKYO (JP) H. ABE et al.: "A high-power microwave GaAs FET oscillator" pages 58-65 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129251A1 (de) * 1983-06-21 1984-12-27 Siemens Aktiengesellschaft Streifenleitungsdopplerradar
EP0600118A1 (de) * 1992-12-01 1994-06-08 Siemens Aktiengesellschaft Spannungsgesteuerter Mikrowellen-Oszillator
US5483206A (en) * 1992-12-01 1996-01-09 Siemens Aktiengesellschaft Voltage-controlled microwave oscillator with micro-stripline filter

Also Published As

Publication number Publication date
JPS57170604A (en) 1982-10-20
CA1177581A (en) 1984-11-06
FR2502865A1 (de) 1982-10-01
FR2502865B1 (de) 1986-08-29
US4481486A (en) 1984-11-06

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Inventor name: BERT, ALAIN

Inventor name: KAMINSKY, DIDIER