EP0051598A1 - Procede de decollage - Google Patents
Procede de decollageInfo
- Publication number
- EP0051598A1 EP0051598A1 EP19810900532 EP81900532A EP0051598A1 EP 0051598 A1 EP0051598 A1 EP 0051598A1 EP 19810900532 EP19810900532 EP 19810900532 EP 81900532 A EP81900532 A EP 81900532A EP 0051598 A1 EP0051598 A1 EP 0051598A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- substrate
- depositing
- masking
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Procede de formation d'un modele conducteur sur un substrat semi-conducteur consistant a deposer une premiere couche de materiau ayant un premier taux d'attaque chimique caracteristique sur une couche sous-jacente du substrat, et a appliquer une couche de masque ayant un second taux d'attaque chimique caracteristique different du premier et formant une configuration d'ouvertures sur la premiere couche. Une solution d'attaque chimique est ensuite appliquee sur le corps par dessus la couche de masque de sorte que la premiere couche soit attaquee chimiquement au niveau des ouvertures sur la couche sous-jacente ou substrat, creant ainsi une depouille sous la couche de masque. Une pellicule metallique d'une epaisseur appropriee est deposee sur les couches de maniere a creer un escalier discontinu sur le bord de la couche de masque. Finalement, une solution dissolvante est appliquee pouvant dissoudre la premiere couche pour l'enlever et decoller la couche metallique deposee sur la couche de masque, laissant ainsi une configuration de metal sur le substrat.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1980/000544 WO1981003240A1 (fr) | 1980-05-08 | 1980-05-08 | Procede de decollage |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0051598A1 true EP0051598A1 (fr) | 1982-05-19 |
Family
ID=22154335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19810900532 Withdrawn EP0051598A1 (fr) | 1980-05-08 | 1980-05-08 | Procede de decollage |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0051598A1 (fr) |
WO (1) | WO1981003240A1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL163370C (nl) * | 1972-04-28 | 1980-08-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon. |
US4218283A (en) * | 1974-08-23 | 1980-08-19 | Hitachi, Ltd. | Method for fabricating semiconductor device and etchant for polymer resin |
FR2285716A1 (fr) * | 1974-09-18 | 1976-04-16 | Radiotechnique Compelec | Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede |
US4004044A (en) * | 1975-05-09 | 1977-01-18 | International Business Machines Corporation | Method for forming patterned films utilizing a transparent lift-off mask |
US4131496A (en) * | 1977-12-15 | 1978-12-26 | Rca Corp. | Method of making silicon on sapphire field effect transistors with specifically aligned gates |
US4228212A (en) * | 1979-06-11 | 1980-10-14 | General Electric Company | Composite conductive structures in integrated circuits |
-
1980
- 1980-05-08 WO PCT/US1980/000544 patent/WO1981003240A1/fr unknown
- 1980-05-08 EP EP19810900532 patent/EP0051598A1/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO8103240A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO1981003240A1 (fr) | 1981-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4532002A (en) | Multilayer planarizing structure for lift-off technique | |
US4004044A (en) | Method for forming patterned films utilizing a transparent lift-off mask | |
US9595656B2 (en) | Double-masking technique for increasing fabrication yield in superconducting electronics | |
US20030111439A1 (en) | Method of forming tapered electrodes for electronic devices | |
US4367119A (en) | Planar multi-level metal process with built-in etch stop | |
US4202914A (en) | Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask | |
US4045594A (en) | Planar insulation of conductive patterns by chemical vapor deposition and sputtering | |
EP0230615A2 (fr) | Polyimides contenant du silicium utilisé comme arrêt pour l'attaque à l'oxygène et comme couche diélectrique composite | |
JPS5812344B2 (ja) | 銅を基材とする金属パタ−ンの形成方法 | |
US4447824A (en) | Planar multi-level metal process with built-in etch stop | |
US3839111A (en) | Method of etching silicon oxide to produce a tapered edge thereon | |
US4451554A (en) | Method of forming thin-film pattern | |
EP0145272B1 (fr) | Dépôt métal/semi-conducteur | |
EP0051598A1 (fr) | Procede de decollage | |
US6686128B1 (en) | Method of fabricating patterned layers of material upon a substrate | |
JPH04111422A (ja) | 半導体装置の製造方法 | |
CN117594436B (zh) | 剥离金属的方法 | |
JPS5978586A (ja) | Nbのパタ−ン形成法 | |
KR100252757B1 (ko) | 금속패턴 형성방법 | |
JP3046114B2 (ja) | 半導体集積回路装置の製造方法 | |
KR0138008B1 (ko) | 금속배선층 형성방법 | |
JPH02134818A (ja) | 配線構造体の形成法 | |
JP2914043B2 (ja) | 半導体装置の製造方法 | |
KR100218501B1 (ko) | 액정 표시 장치의 제조 방법 | |
JPS61206223A (ja) | パタ−ン形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB NL |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 19820712 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: SPLINTER, MICHAEL R. Inventor name: MADDOX, PATRICA D. |