EP0032332A1 - Hochfrequenzleistungsteiler und Hochfrequenzschaltungen, insbesondere Halbleiterschaltungen mit einem solchen Teiler - Google Patents

Hochfrequenzleistungsteiler und Hochfrequenzschaltungen, insbesondere Halbleiterschaltungen mit einem solchen Teiler Download PDF

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Publication number
EP0032332A1
EP0032332A1 EP80401786A EP80401786A EP0032332A1 EP 0032332 A1 EP0032332 A1 EP 0032332A1 EP 80401786 A EP80401786 A EP 80401786A EP 80401786 A EP80401786 A EP 80401786A EP 0032332 A1 EP0032332 A1 EP 0032332A1
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EP
European Patent Office
Prior art keywords
channels
distributor
branches
power
divider
Prior art date
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Granted
Application number
EP80401786A
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English (en)
French (fr)
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EP0032332B1 (de
Inventor
Alain Bert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
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Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of EP0032332A1 publication Critical patent/EP0032332A1/de
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Publication of EP0032332B1 publication Critical patent/EP0032332B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports

Definitions

  • the invention relates to a power distributor for radio waves. It relates in particular to the variants of such a distributor made in the solid state for application to microwave frequencies. It also relates to devices using one or more of these distributors.
  • Power divider and recombiner circuits are used whenever it is sought, for example, to add the powers of several independent amplifiers, in particular when a power higher than that supplied by the existing amplifiers is required.
  • circuits proposed so far generally do not meet a condition considered to be fundamental, which is that of allowing proper operation, even in the presence of identical mismatches on the loads of the different branches, or channels, of the divider, of the transistors for example, in high frequency distributed amplifiers; in the case of such amplifiers, an operation is always sought in a frequency range as wide as possible, the range in which such mismatches usually manifest themselves.
  • the excess power is absorbed, that reflected by the mismatched element, in a resistive member mounted between the branches of the distributor.
  • the invention relates to a power distributor capable of catching up, unlike those of the prior art, even symmetrical imbalances of its branches, in particular on the occasion of variations in impedance presented by the active elements which charge them. ci, when the frequency moves; such a distributor can a fortiori also make up for the non-symmetrical imbalances that may arise.
  • FIG. 1 All the dividing devices of which figure 1 gives the diagram can be regarded as deriving from the assembly of Wilkinson, on the subject of which one will refer to the article of IRE Trans. MTT3, page 116, January 1960.
  • the diagram represents the case of the power division starting from a high frequency generator R G debiting on N branches, each charged by the same impedance of use to the second order near, R; each line has m sections of impedances Z 1 , Z 2 ... Z m , between which are mounted in parallel, as shown in the drawing, dissipative elements R 01 , R 02 .- ..R Om . All these branches are voluntarily represented of identical constitution even if in reality they contain some minor differences between them.
  • the sections of impedances Z 1 , Z 2 ... Z m are quite simply sections of coaxial lines, for example quarter wave, that is to say whose length is equal to quarter of the average wavelength of the high frequency operating wave supplied by the generator R G.
  • the device being provided for given initial conditions, in accordance with the above, that is to say with N branches formed of m section of lines, all identical to each other (same impedances Z 1 ... Z m same dissipative elements R 01 , R 0m and same charges R s ), and adjusted so that the charges R s are perfectly adapted, no power is reflected in the branches, in which the points located at the same distance from the source, such as L 1 , M 1 , N 1 , are in phase on all the lines; no energy is then dissipated in the resistive elements placed in bridge between the lines.
  • the invention provides an arrangement in which is ensured, permanently, that is to say whatever the state of the loads, a phase shift allowing the desired absorption.
  • the distributor comprises several dividers arranged in cascade, each of them being connected by an output branch to the next; each of them further comprises, at its outlet, a certain number of branches on which the loads are mounted.
  • this branch is connected to the input branch in the next divider, called the primary branch, through a phase shifter if necessary; this divider also has, like the previous one, secondary branches, including a main one connected to the primary path of the following divider, possibly through a phase shifter, etc.
  • FIG. 2 gives the general diagram of the distributor of the invention, limited to two dividers, D (i - 1) and D (i), diagram on which we find the main secondary channels in B (i - 1) and B ( i), the other secondary routes in C. (i - 1) ... C m (i - 1) and C (i) ... C m (i), the primary routes A (i - 1) and A (i) and the phase shifters 0 (i -1) and ⁇ (i), designated by the same letter as the phase shift that they introduce on the primary branch on which they are mounted.
  • a network of resistive elements represented as such and left without reference for clarity, is used, in addition, as in the prior art as described with reference to FIG. 1.
  • each of the dividers introduces itself a phase shift which will be called ⁇ D with the index of rank i as for the rest of the elements above.
  • loads are mounted, as we have said, at the ends of the secondary branches, according to the distribution deemed best in relation to the use for which the distributor is intended. In the example of FIG. 2, these loads are distributed in a number equal to the output of the dividers; but any other distribution could be envisaged where the index m would not have the same value for all the divisors.
  • the device is first adjusted, including the phase shifters ⁇ (i), so that, for practically zero reflections in the secondary branches, the absorption is negligible in the resistive elements.
  • the phase differences introduced between the outputs of the successive dividers cause the waves reflected in the main secondary channel B (i) and in the various secondary channels C (i ) are not in phase; a potential difference then appears between point a on the one hand and points b, c, d on the other hand, and an absorption of the power reflected in the resistive elements is made possible.
  • Identical variations in load in the branches of the distributor are thus possible without interfering with operation, contrary to what takes place in devices of the same kind of the prior art.
  • Two assemblies are possible: either we introduce a phase shifter ⁇ ⁇ 0, preferably as in the above , between A and the main secondary path B of the last divider, the other secondary branches all being connected to other loads; or all the secondary branches of the last divider, including the main secondary channel, are directly connected to loads: see Figures 3 and 4 where all the other secondary channels are indistinctly designated by C.
  • the distributor of the invention appears as a progressive structure composed of a succession of phase dividers offset from one another.
  • the total phase shift between a secondary branch C (i) and a secondary branch C (i - 1) is 0 (i) + ⁇ D (i) with the previous notations.
  • phase shift will obviously only be effective if this sum differs from k ', which is always easily achieved. We can take in particular .
  • the reflected power is, in this case, absorbed in the resistive elements, and one can make so that a collective mismatch of the charges has no influence on the reflection coefficient at the input, on the left of the figure 2, which is that of using the distributor as a divider, for a source whose power arrives in the direction of the arrow.
  • the payloads are transistors used for amplification over a wide bandwidth.
  • the gain of a transistor decreases by about 6 dB per octave depending on the frequency.
  • the input power should be reduced accordingly. This is achieved either by introducing selective losses into the input circuit, or by voluntarily mismatching at the bottom of the band.
  • the latter solution is the simplest, but it is necessary to absorb the power thus reflected.
  • the structure according to the invention makes it possible to obtain this result in a particularly simple manner even in the case of a large number of transistors and over a wide bandwidth. Individual mismatches are also absorbed in the same way as in a phase divider.
  • FIG. 5 shows an exemplary embodiment thereof in the micro-band technique.
  • the view represented is a view in plane of the useful part of the insulating substrate 10 on which the transmission lines are made by linear conductors applied to this substrate, coated with metal on its opposite face.
  • the example in the figure implements two distributors of the invention as described above, designated as a whole by I and II; the first of them operates as a power divider to the four transistors T 1 to T 4 from a source not shown, located at the entrance to part I (arrow), and the second as a recombiner of the powers of output of these four transistors.
  • Each of them has three phase dividers, such as D (i) of the previous diagrams, with two secondary branches each, including the main secondary branch (m (i) of the preceding diagrams is therefore here equal to 1), and a terminal line.
  • these dividers carry marks D as in the above and consist of lines (1,7), (2,6) and (3,5) as shown in the drawing; the terminal line 4 is charged by the last transistor; the drawing shows the location of the resistive elements without mark. Similar benchmarks are assigned to Set II, with the changes necessary to avoid confusion. The recombined power comes out in the direction of the arrow.
  • FIG. 6 gives a variant of the arrangement of the previous figure particularly suitable for this case, in which, in each divider, an impedance transformer is provided on the secondary branch, as shown in the drawing, where these transformers carry the marks t t2 t 3 ; each of them has a second line 01, 02, 03 coupled to the secondary lines 1, 2 and 3.
  • FIG. 7 shows, also in micro-band technique, another example of application of the distributor of the invention, to the addition of the powers of several negative resistance diodes; the variant of the figure uses impedance transformers as described with reference to the previous figure.
  • the output power is collected in the direction of the arrow on a frequency fixed by a "locking" signal using a circulator (curved arrow), frequency of the order of 10 to 20 gigahertz for example.
  • the diodes bear the marks d d2 d 3 d 4 ; those of the other elements, without designation, are easily deduced from the preceding figures.
  • FIG. 8 shows a particularly simple example, where each of the dividers and recombiners has only two branches, and where each recombiner and the divider which follows it are directly linked together.
  • the example shows a three-stage amplifier with two transistors each; the gain in decibels is multiplied by the number of stages between input and output (arrows).
  • the active elements are diodes or transistors attached to the substrate; within the limits of the invention, these elements could be integrated into the substrate.
  • the invention also includes, on the contrary, the case of embodiments by conventional means, other than those of the solid state, both with regard to the active elements and the transmission elements.

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  • Amplifiers (AREA)
EP80401786A 1980-01-15 1980-12-12 Hochfrequenzleistungsteiler und Hochfrequenzschaltungen, insbesondere Halbleiterschaltungen mit einem solchen Teiler Expired EP0032332B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8000845A FR2473813B1 (fr) 1980-01-15 1980-01-15 Repartiteur de puissance radio-electrique, et dispositifs radio-electriques utilisant un tel repartiteur, notamment a l'etat solide
FR8000845 1980-01-15

Publications (2)

Publication Number Publication Date
EP0032332A1 true EP0032332A1 (de) 1981-07-22
EP0032332B1 EP0032332B1 (de) 1986-03-05

Family

ID=9237559

Family Applications (1)

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EP80401786A Expired EP0032332B1 (de) 1980-01-15 1980-12-12 Hochfrequenzleistungsteiler und Hochfrequenzschaltungen, insbesondere Halbleiterschaltungen mit einem solchen Teiler

Country Status (5)

Country Link
US (1) US4424495A (de)
EP (1) EP0032332B1 (de)
JP (2) JPS56106413A (de)
DE (1) DE3071474D1 (de)
FR (1) FR2473813B1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531274A1 (fr) * 1982-07-30 1984-02-03 Centre Nat Rech Scient Dispositif combinateur de puissance pour oscillateur ou amplificateur a micro-ondes
EP0180011A1 (de) * 1984-10-30 1986-05-07 Siemens Telecomunicazioni S.P.A. Richtungskoppler vom Abzweigleitungstyp
FR2600843A1 (fr) * 1986-06-27 1987-12-31 Soares Robert Amplificateur de puissance elevee en micro-ondes
WO2010122074A1 (fr) * 2009-04-24 2010-10-28 Thales Dispositif d'amplification de puissance à encombrement réduit
CN109546279A (zh) * 2018-11-29 2019-03-29 北京小米移动软件有限公司 功分/合路器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10058774A1 (de) * 2000-11-27 2002-06-13 Adva Ag Optische Sendeeinrichtung, insbesondere Laser-Sendeeinrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967218A (en) * 1975-09-26 1976-06-29 The United States Of America As Represented By The Secretary Of The Army Edge-guided wave directional combiner

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1235473A (en) * 1967-06-21 1971-06-16 Texas Instruments Ltd Amplifiers
US3593174A (en) * 1969-06-05 1971-07-13 Westinghouse Electric Corp Solid state amplifier for microwave frequency signals
US3691485A (en) * 1970-08-03 1972-09-12 Trw Inc Three-port quadrature hybrids
US3742392A (en) * 1971-12-13 1973-06-26 Rca Corp Self loaded uneven power divider
DE2419173A1 (de) * 1974-04-20 1975-10-30 Bosch Elektronik Gmbh Mehrfachabzweiger zum richtungsabhaengigen uebertragen von hochfrequenzsignalen
JPS5442967A (en) * 1977-09-02 1979-04-05 Fujitsu Ltd Bias supply circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967218A (en) * 1975-09-26 1976-06-29 The United States Of America As Represented By The Secretary Of The Army Edge-guided wave directional combiner

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
10th EUROPEAN MICROWAVE CONFERENCE, 8-12 Septembre 1980, pages 408-412 Sevenoaks, Kent, G.B. A.G. BERT et al.: "The traveling wave power divider/combiner" * En entier * *
1978 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, 27-29 Juin 1978, pages 285-287 W.C. TSAI: "A 5-Watt C-Band FET Amplifier" * Paragraphe "Power Booster Amplifier Design" et figures 4,5 * *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531274A1 (fr) * 1982-07-30 1984-02-03 Centre Nat Rech Scient Dispositif combinateur de puissance pour oscillateur ou amplificateur a micro-ondes
EP0180011A1 (de) * 1984-10-30 1986-05-07 Siemens Telecomunicazioni S.P.A. Richtungskoppler vom Abzweigleitungstyp
FR2600843A1 (fr) * 1986-06-27 1987-12-31 Soares Robert Amplificateur de puissance elevee en micro-ondes
WO2010122074A1 (fr) * 2009-04-24 2010-10-28 Thales Dispositif d'amplification de puissance à encombrement réduit
FR2944928A1 (fr) * 2009-04-24 2010-10-29 Thales Sa Dispositif d'amplification de puissance a encombrement reduit
US8922296B2 (en) 2009-04-24 2014-12-30 Thales Power amplifier device with reduced bulk
RU2546060C2 (ru) * 2009-04-24 2015-04-10 Таль Малогабаритное устройство усиления мощности
CN109546279A (zh) * 2018-11-29 2019-03-29 北京小米移动软件有限公司 功分/合路器
CN109546279B (zh) * 2018-11-29 2021-06-22 北京小米移动软件有限公司 功分/合路器

Also Published As

Publication number Publication date
US4424495A (en) 1984-01-03
JPH02168707A (ja) 1990-06-28
DE3071474D1 (en) 1986-04-10
JPS56106413A (en) 1981-08-24
EP0032332B1 (de) 1986-03-05
FR2473813B1 (fr) 1986-03-21
FR2473813A1 (fr) 1981-07-17

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