EP0000720A1 - Verfahren zur Herstellung eines Einkristalls, der aus einer festen Lösung von Yttrium-Eisen Granaten besteht - Google Patents

Verfahren zur Herstellung eines Einkristalls, der aus einer festen Lösung von Yttrium-Eisen Granaten besteht Download PDF

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Publication number
EP0000720A1
EP0000720A1 EP7878100474A EP78100474A EP0000720A1 EP 0000720 A1 EP0000720 A1 EP 0000720A1 EP 7878100474 A EP7878100474 A EP 7878100474A EP 78100474 A EP78100474 A EP 78100474A EP 0000720 A1 EP0000720 A1 EP 0000720A1
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EP
European Patent Office
Prior art keywords
component
single crystal
mixture
solvent
process according
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EP7878100474A
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English (en)
French (fr)
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EP0000720B1 (de
Inventor
Shigeyuki Kimura
Isamu Shindo
Yasumichi Mori
Kenji Kitamura
Nobuo Ii
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National Institute for Research in Inorganic Material
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National Institute for Research in Inorganic Material
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Priority claimed from JP9541677A external-priority patent/JPS5428798A/ja
Priority claimed from JP9541777A external-priority patent/JPS5428799A/ja
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Publication of EP0000720A1 publication Critical patent/EP0000720A1/de
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02Zone-melting with a solvent, e.g. travelling solvent process
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Definitions

  • the present invention relates to a process for producing a single . crystal of a yttrium-iron garnet solid solution having the formula wherein R represents Y and optionally other rare earth element and M represents Fe and optionally Al or Ga.
  • the single crystals of the compound having the formula have been produced by using PbO - PbF 2 type flux, BaO - BaF2 type flux or Li 2 Mo0 4 type flux etc. Most of the single crystals of the compound having the formula have been commercially produced by said methods.
  • the compound of R 3 M 5 O 12 has been dissolved in the flux having a low menting point and the single crystal has been formed by gradually cooling it or utilizing the temperature gradient
  • the flux has been included in the single crystal as inclusion or impurity and it has taken a long time for the single crystal growth and the distribution of Fe, Al and Ga component in the yttrium-iron garnet has not been uniform and the defect ratio has been increased and the cost for the production has been disadvantageously increased.
  • the material of the heater has been included in the single crystal as inclusion or impurity and it has taken a long time for the single t crystal growth because of no stirring.
  • the solvent is contacted with the lower edge of the rod of the mixture for the product and the seed is contacted with the bottom of the solvent and the solvent part is heated to melt it by the floating zone method to form the single crystal of the product of R 3 M 5 O 12 wherein R represents Y and optionally other rare earth element and M represents Fe and optionally Al or Ga.
  • the rod of the mixture for the product comprises the yttrium oxide type component and the iron oxide type component at molar ratio of 2. 5 : 5. 0 to 3. 5 : 5. 0 wherein the yttrium oxide type component comprises Y 2 O 3 as main component and optionally the other rare earth oxides as additional component, and the iron oxide type component comprises Fe 2 O 3 as main component and optionally Al 2 O 3 or Ga 2 O 3 as additional component.
  • the solvent comprises the iron oxide type component and optionally less than 0.6 mole of the rare earth oxide component per 1 mole of the iron oxide type component.
  • the single crystal of the yttrium-iron garnet having the formula and having high quality means the single crystal having the width of ferromagnetic resonance absorption ( ⁇ H) of less than 2 Oe under the alternating field of 9,300 MHz as a spherical ball having a diameter of 1 mm.
  • the single crystal having high quality can be obtained by recrystallizing the resulting single crystal of R 3 M 5 O 12 .
  • the yttrium oxide and the other rare earth oxides can be the commercially available ones without any chemical treatment and preferably with a smaller diameter so as to promote the reaction with ferric oxide, aluminum oxide or gallium oxide; such as less than 1 mm especially, less than 10 ⁇ m.
  • the purity of yttrium oxide and the other rare earth oxide can be of special grade.
  • the contaminationwith impurity is remarkably disadvantageous whereby higher purities of the raw materials are preferable.
  • the ferric oxide used in the present invention can be in special grade and preferably has a smalldiameter so as to promote the reaction with the rare earth oxide, aluminum oxide or gallium oxide, such as less than 1 mm especially, less than 10 ⁇ m.
  • the aluminum oxide used in the present invention can be in special grade and preferably has a smalldiameter so as to promote the reaction with the rare earth oxide, ferric oxide or gallium oxide, such as less than 1 mm especially, less than 10 ⁇ m.
  • the gallium oxide used in the present invention can be in special grade and preferably has a small diameter so as to promote the reaction with the rare earth oxide, ferric oxide or aluminum oxide, such as less than 1 mm especially less than 10 ⁇ m.
  • the mixing operation it is preferable to uniformly mix the raw materials.
  • the mixing operation can be made by various methods such as a method of mixing them with an organic liquid such as alcohols and acetone in a mortar; a method of mixing them in a mixer such as a ball mill or a method of coprecipitation after dissolving them in an acid etc.
  • the average diameter of powders of the mixture is preferably less than 1 mm especially less than 10 ⁇ m.
  • the composition for the product of R 3 M 5 O 12 used in the present invention is preferably a molar ratio of 2. 5 : 5. 0 to 3. 5 : 5. 0 of the rare earth oxide to the total of ferric oxide, aluminum oxide and gallium oxide.
  • the ferric oxide is usually used as the main component for the iron oxide type component and a part can be substituted with aluminum oxide or gallium oxide (greater than 0.1 mole especially greater than 1 mole %).
  • the magnetic characteristics of the product can be varied by varying the content of aluminum oxide or gallium oxide.
  • the magnetic or electric characteristics of the product may be improved by adding a small amount of the component of Ca, Sr, Ba, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Si or Ge if necessary.
  • the solvent used in the present invention is a liquid medium for dissolving the mixture for the product of R 3 M 5 O 12 and forming the single crystal of R 3 M 5 O 12 from it.
  • the solvent comprises ferric oxide.
  • the other components of aluminum oxide, gallium oxide, the rare earth oxides can be incorporated.
  • the molar ratio of the total of ferric oxide; aluminum oxide and gallium oxide to the rare earth oxide is usually 1 : 0 to 1 : 0.6 preferably 1 : 0.1 to 1 : 0.3.
  • the melting point of the solvent should be lower than the decomposition temperature of the product of R 3 M 5 O 12 .
  • ThE content of aluminum oxide or gallium oxide is dependent upon the composition of the solid solution of the yttrium-iron garnet.
  • the molar concentrations of Fe 2 O 3 , Al 2 O 3 and Ga 2 O 3 in the solvent are designated as , and , and the molar concentrations of the components in the solid-solution are designated as the ratio of is preferably in a range of 1 : 1.5 to 1 : 2. 5 especially 1 : 1.8 to 1 : 2.2. It is preferable to have the same relationship between and .
  • the rubber press method means that the powdery mixture is charged in a rubber tube and both ends of the rubber tube are sealed and the rubber tube is compressed under high hydraulic pressure in a sealed hydraulic apparatus.
  • the hydraulic pressure is usually higher than 500 Kg/cm 2 preferably 1 to 2 ton/cm 2
  • the hydraulic pressure is usually applied for longer than 5 seconds preferably 1 minute.
  • the molded product prepared under lower pressure is easily cracked.
  • the molded mixture can have any rod type shape as it is used in the floating zone method. It is especially preferable to use a cylindrical rod having a diameter of 1 mm to 10 cm and a length of 1 mm to 5 m preferably a diameter of 3 mm to 1 cm and a length of 5 mm to 30 cm.
  • the furnace is to maintain greater than 10 -2 atm. of oxygen and to be stable at the maximum temperature of 1,650°C, and preferably to maintain greater than 1 atm. of oxygen.
  • the femperature for calcining the molded mixture is dependent upon the kind of the rare earth oxide and the content of Al or Ga and the pressure of oxygen in the environment, and it is preferably at 1, 500 to 1,750°C in the case of the mixture for. the product and at 1,400 to 1, 450°C in the case of the mixture for the solvent. It is especially preferable to be the maximum temperature ⁇ forming no liquid ⁇ in the oxygen environment in the case of the mixture for the product of R 3 M 5 O 12 .
  • the time for calcining the molded mixture is preferably longer and it is preferable to calcine the molded mixture to give a bulk density of greater than 80% of the true density.
  • the oxygen pressure in the environment of the calcination is preferably higher so as to prevent a formation of ferrous oxide component in the product of R 3 M 5 O 12 because the ferrous oxide component causes inferior magnetic characteristics.
  • an inert gas such nitrogen or argon.
  • the bubbles of the inert gas such as nitrogen or argon are moved into the solvent in the operation of the single crystal growth to form a large bubble and when the bubble is broken, smooth growth of the single crystal is prevented.
  • the radiation convergence type floating zone method is employed in order to prevent a contamination with impurities and to increase the speed of the single crystal growth and to give uniform distribution of the components and to decrease the defects.
  • the floating zone method used in the process of the present invention means that the rod for the product is rotated and fed from the higher position into the high temperature zone maintaining the temperature higher than the melting point of the rod, and the seed crystal is rotated in the reverse direction and fed from the lower position and both the rod and the seed crystal are contacted at the molten zone under the condition having no other support for the floating zone and then, both the rod and the seed crystal are moved downwarldy at a constant speed whereby the rod is dissolved into the molten solvent and the single crystal is formed on the seed crystal from the molten solvent.
  • the high temperature zone is maintained stably (in space and time).
  • the high temperature zone maintaining the temperature being higher than the melting point of the rod in the single crystal growth apparatus for the floating zone method should be maintained at higher than 1, 450°C of the melting point of the solvent for 3 to 15 mm depending upon the diameter of the rod for R 3 M 5 O 12 .
  • the length of the high temperature zone to be maintained higher than 1, 450°C is not preferably longer or shorter than the range.
  • the temperature distribution except near the high temperature zone is not critical.
  • the single crystal growth apparatus used in the process of the present invention should have an equipment for sealing the single crystal growth part from the atmosphere and varying the condition of the environment as desired.
  • the radiation convergence type floating zone method means the floating zone method wherein the stable high temperature zone is formed by the convergence of radiation from the light source at a high temperature by a mirror or a lens.
  • the floating zone method of the present invention has the feature that the composition of the rod for R 3 M 5 O 12 is different from that of the solvent This is different from the conventional floating zone method.
  • the molten zone is formed by adhering a small amount of the molten solvent at the lower edge of the rod for R 3 M 5 O 12 .
  • the molten solvent can be adhered on the top of the seed crystal or on both of the lower edges of the rod for R 3 M 5 O 12 and the top of the seed crystal.
  • the amount of the molten solvent is preferably that of a semi-spherical size having the diameter of the rod for R 3 M 5 O 12 .
  • the amount of the molten solvent is preferably that of each semi-spherical size having the diameter of the rod or the seed crystal.
  • the molten solvent forms the floating zone by contacting the rod for R 3 M 5 O 12 with the seed crystal through the molten solvent.
  • the seed crystal can be any kind of solid which is resistant to high temperature and inert to the solvent and it is preferably a part of the calcined rod for R 3 M 5 O 12 especially the single crystal of R 3 M 5 O 12 .
  • the single crystal growth speed using the rod for R 3 M 5 0 12 , the solvent and the seed crystal in the floating zone method is equal to the downward feeding speed of the rod and the seed crystal.
  • the single crystal of R 3 M50 12 is formed at a speed of greater than 0.1 mm per hour.
  • the speed is preferably greater but it.is preferably less than 10 cm per hour especially less than 8 mm per hour, optimumly in a range of 1 to 4 mm per hour. When it is too slow, the efficiency for producing the single crystal of R 3 M 5 O 12 is lowered and the cost is increased.
  • the oxygen pressure in the environment is maintained at at least 10- 2 atm.
  • the oxygen pressure is preferably higher and especially in a range of 1 to 100 atm.
  • the single crystal is uniformly dissolved in the molten solvent whereby the recrystallization of the single crystal of R 3 M 5 0 12 on the seed crystal is stable and the single crystal having high quality can be obtained.
  • the single crystal of R 3 M 5 O 12 having high quality means the single crystals having a width of ferromagnetic resonance absorption of less than 5 Oe at room temperature though it is affected by the content of Al or Ga component.
  • the single crystal of R 3 M 5 0 12 having high purity and uniform distribution of the components can be obtained at lower cost in comparison with the single crystal of R 3 M 5 O 12 obtained by the conventional method.
  • the single crystal of R 3 M 5 O 12 obtained by the process of the present invention can be used as a magnetic material for microwaves which is the main useofthose obtained by the conventional method. It also can be used in the other fields of magnetic materials such as spinel type ferrite, etc. as it is remarkably low in cost.
  • Y 2 0 3 (purity of greater than 99.9%), Fe 2 O 3 (purity of greater than 99.9%) and Al 2 O 3 (purity of greater than 99.9%) in powdery forms were mixed at molar ratios of 3.0 : 4. 5 : 0. 5 as the mixture for Y 3 Fe 4.5 Al 0.5 O 12 and at molar'ratios of 0.17 : 0.95:0.05 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Each rod having a diameter of about 8 mm and a length of about 80 mm prepared by the molding step was calcined in a vertical type electric furnace at 1,550°C for the product and at 1,400°C for the solvent.
  • the cracking of the rods caused by rapid heating and quenching was prevented by taking 1 hour for inserting and discharging the rod.
  • the rod for the product of Y 3 Fe 4 . 5 Al 0. 5 O 12 having a diameter of about 6. 5 mm and a length of about 60 mm was fixed on an upper rotary shaft for product of a floating zone single crystal growth apparatus employing infrared radiation convergence method.
  • the rod for solvent having a diameter of about 7 mm and a length of about 20 mm was fixed on a lower rotary shaft for seed crystals.
  • Oxygen (1 atom) was fed into a crystal growth chamber partitioned from the ambient by a fused quartz tube to purge air and the heating operation was initiated. Oxygen was fed at a linear speed of 0.6 cm per second near the floating zone.
  • the edge of the rod for solvent was adjusted to the position imparting highest temperature in a single crystal growth apparatus.
  • the solvent adhered at the lower edge of the rod for Y 3 Fe 4.5 Al 0.5 O 12 was melted by heating it.
  • the seed crystal was adjusted to contact with the solvent and was contacted with the rod for product through the molten part.
  • the seed crystal and the rod for product were respectively rotated at a speed of 30 rpm in opposite direction each other until completing the crystal growth.
  • the condition for imparting suitable size of the molten part was maintained by finely controlling the temperature and the gap between the rod for product and the seed crystal. Then, both of them were shifted downwardly at a constant speed of 2. 0 mm/hr to form a single crystal of Y 3 Fe 4 . 5Al 0. 5 O 12 on the seed crystal.
  • Polycrystalline product was initially formed but after the growth for 10 to 15 mm, the product had a sectional view of single crystal.
  • the single crystal was cut out from the rod for product and was cooled to obtain a rod of single crystal of Y 3 Fe 4. 5 Al 0. 5 O 12 having a diameter of 6 mm and a length of 40 mm.
  • Y 2 O 3 (purity of greater than 99.9%), Fe 2 O 3 (purity of greater than 99.9%) and Al 2 O 3 (purity of greater than 99.9%) in powdery forms were mixed at molar ratios of 3. 0 : 4. 0 : 1.0 as the mixture for Y 3 Fe 4 AlO 12 and at molar ratios of. 0.17 : 0.9 : 0.1 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Example 2 In accordance with the process of Example 1, the two types of the mixtures were treated to obtain a rod of single crystal of Y 3 Fe 4 AlO 12 having a diameter of 6 mm and a length of 40 mm.
  • the resulting cylindrical single crystal was sliced in parallel to the growth direction and the sectional surface was polished and observed by a microscope to find no ununiform part.
  • the single crystal obtained by. the process of Example 1 was used and recrystallized in accordance with the process of Example 1 to obtain a single crystal having a diameter of 6 mm and a length of 40 mm having high quality.
  • a part of the resulting single crystal was cut out and was polished to form a spherical ball having a diameter of 0. 5 mm and a width of ferro- magnetic resonance absorption of the ball was measured to result 1.8 Oe.
  • Y 2 O 3 (purity of greater than 99.9%), Fe 2 0 3 (purity of greater than 99.9%) and Ga 2 O 3 (purity of greater than 99.9%) in powdery forms were mixed at molar ratios of 3. 0 : 4. 5 : 0. 5 as the mixture for Y 3 Fe 4. 5 Ga 0. 5 O 12 and at molar ratios of 0.17 : 0.95 : 0. 05 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Example 1 In accordance with the process of Example 1, the two types of the mixtures were treated to obtain a rod of single crystal of Y 3 Fe 4 . 5 Ga 0. 5 O 12 having a diameter of 6 mm and a length of 40 mm.
  • the resulting cylindrical single crystal was sliced in parallel to the growth direction and the sectional surface was polished and observed by a microscope to find no ununiform part.
  • Y 2 0 3 (purity of greater than 99.9%), Fe 2 O 3 (purity of greater than 99.9%) and Ga 2 O 3 (purity of greater than 99.9%) in powdery forms were mixed at molar radios of 3. 0 : 4. 0 : 1. 0 as the mixture for Y 3 Fe 4 GaO 12 and at molar ratios of 0.17 : 0.9 : 0. 1 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Example 2 In accordance with the process of Example 1, the two types of the mixtures were treated to obtain a rod of single crystal of Y 3 Fe 4 GaO 12 having a diameter of 6 mm and a length of 40 mm.
  • the resulting cylindrical single crystal was sliced in parallel to the growth direction and the sectional surface was polished and observed by a microscope to find no ununiform part.
  • Y 2 0 3 (purity of greater than 99.9%), Nd 2 O 3 (purity of greater than 99.9%) and Fe 2 O 3 (purity of greater than 99.9%) in powdery forms were mixed at molar ratios of 2. 5 : 0. 5 : 5. 0 as the mixture for Y 2.5 Nd 0.5 Fe 5 O 12 and at molar ratios of 0.14 : 0. 03 : 1. 0 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Example 2 In accordance with the process of Example 1, the two types of the mixture were treated to obtain a rod of single crystal of Y 2.5 Nd 0.5 Fe 5 O 12 having a diameter of 6 mm and a length of 40 mm.
  • the resulting cylindrical single crystal was sliced in parallel to the growth direction and the sectional surface was polished and observed by a microscope to find no ununiform part.
  • Y 2 O 3 (purity of greater than 99.9%), Yb 2 O 3 (purity of greater than 99.9%) and Fe 2 O 3 (purity of greater than 99.9%) in powdery forms were mixed at molar ratios of 2. 0 : 1. 0 : 5. 0 as the mixture for Y 2 YbFe 5 O 12 and at molar ratios of 0.11 : 0. 6 : 1. 0 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Example 2 In accordance with the process of Example 1, the two types of the mixtures were treated to obtain a rod of single crystal of Y 2 YbFe5G 12 having a diameter of 6 mm and a length of 40 mm.
  • the resulting cylindrical single crystal was sliced in parallel to the growth direction and the sectional surface was polished and observed by a microscope to find no ununiform part.
  • Y 2 O 3 , Gd0 3 , Fe203, Al 2 O 3 and Ga 2 O 3 which were in powdery forms and respectively had purities of greater than 99.9% were mixed at molar ratios of 2. 5 : 0. 5 : 4. 0 : 0. 5 : 0. 5 as the mixture for Y 2.5 Gd 0.5 Fe 4 Al 0.5 Ga 0.5 G 12 and at molar ratios of 0.14 : 0.3 : 0.9: 0.05 : 0. 05 as the mixture for the solvent.
  • Each mixture was ground with acetone in a mortar to obtain each of two types of mixtures of fine powder having an average diameter of 1 ⁇ m.
  • Example 2 In accordance with the process of Example 1, the two types of the mixtures were treated to obtain a rod of single crystal of Y 2. 5 Cd 0.5 Fe 4 Al 0. 5 Ga 0.5 O 12 having a diameter of 6 mm and a length of 40 mm.
  • the resulting cylindrical single crystal was sliced in parallel to the growth direction and the sectional surface was polished and observed by a microscope to find no ununiform part.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP78100474A 1977-08-09 1978-07-21 Verfahren zur Herstellung eines Einkristalls, der aus einer festen Lösung von Yttrium-Eisen Granaten besteht Expired EP0000720B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9541677A JPS5428798A (en) 1977-08-09 1977-08-09 Method of making high quality yttrium iron garnet *y3 fe5 o 12* single crystal
JP9541777A JPS5428799A (en) 1977-08-09 1977-08-09 Method of making single crystal of yttrium iron garnet solid solution
JP95416/77 1977-08-09
JP95417/77 1977-08-09

Publications (2)

Publication Number Publication Date
EP0000720A1 true EP0000720A1 (de) 1979-02-21
EP0000720B1 EP0000720B1 (de) 1982-07-07

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EP78100474A Expired EP0000720B1 (de) 1977-08-09 1978-07-21 Verfahren zur Herstellung eines Einkristalls, der aus einer festen Lösung von Yttrium-Eisen Granaten besteht

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US (1) US4256531A (de)
EP (1) EP0000720B1 (de)
DE (1) DE2861936D1 (de)

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EP0796931A1 (de) * 1996-03-22 1997-09-24 Murata Manufacturing Co., Ltd. Einkristall aus Cerium enthaltenden magnetischen Granat und Verfahren zu ihrer Herstellung
EP0864669A2 (de) * 1997-03-12 1998-09-16 Murata Manufacturing Co., Ltd. Verfahren zur Züchtung von Einkristallen

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JPS56155515A (en) * 1980-05-01 1981-12-01 Olympus Optical Co Ltd Magnetic garnet film and manufacture
JPS58115090A (ja) * 1981-12-25 1983-07-08 Seiko Epson Corp F・z法によるベリル結晶合成法
US4961818A (en) * 1985-06-21 1990-10-09 Inco Alloys International, Inc. Process for producing single crystals
EP0211187A3 (de) * 1985-06-28 1989-01-11 Kabushiki Kaisha Toshiba Verfahren zur Herstellung eines Einkristalls von Granatferrit
US5394420A (en) * 1994-01-27 1995-02-28 Trw Inc. Multiform crystal and apparatus for fabrication
JP4197579B2 (ja) * 1997-12-24 2008-12-17 株式会社東芝 スパッタリングターゲットとそれを用いたAl配線膜の製造方法および電子部品の製造方法
JP2002249399A (ja) * 2001-02-21 2002-09-06 Murata Mfg Co Ltd 単結晶の製造方法および単結晶
JP3731508B2 (ja) * 2001-08-20 2006-01-05 株式会社村田製作所 磁性単結晶育成用原料棒及び磁性単結晶
KR100554183B1 (ko) * 2002-11-18 2006-02-22 한국전자통신연구원 마이크로파용 yig 자성체 세라믹 조성물 및 그의 제조방법
CN102534790B (zh) * 2012-01-19 2014-11-05 山东大学 一种多段掺杂浓度梯度的石榴石复合晶体及其生长方法
CN115491748A (zh) * 2022-11-01 2022-12-20 安徽科瑞思创晶体材料有限责任公司 一种铋掺钇铁石榴石及其晶体生长方法以及应用

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FR2138232A1 (de) * 1971-05-19 1973-01-05 Labo Electronique Physique

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Title
J0URNAL OF APPLIED PHYSICS, vol. 32, no. 3, March 1961, L.L. ABERNETHY et al.: "Growth of Yttrium Iron Garnet Single Crystals by the Floating Zone Technique", pages 376s to 377s *
JOURNAL OF CRYSTAL GROWTH, vol. 41, no. 2, December 1977, S. KIMURA et al.: "Single crystal growth of YIG by the floating zone method", pages 192 to 198 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0796931A1 (de) * 1996-03-22 1997-09-24 Murata Manufacturing Co., Ltd. Einkristall aus Cerium enthaltenden magnetischen Granat und Verfahren zu ihrer Herstellung
US6033470A (en) * 1996-03-22 2000-03-07 Murata Manufacturing Co., Ltd. Method of producing a cerium-containing magnetic garnet single crystal
US6063304A (en) * 1996-03-22 2000-05-16 Murata Manufacturing Co., Ltd. Cerium-containing magnetic garnet single crystal and production method therefor
EP0864669A2 (de) * 1997-03-12 1998-09-16 Murata Manufacturing Co., Ltd. Verfahren zur Züchtung von Einkristallen
EP0864669A3 (de) * 1997-03-12 2000-05-17 Murata Manufacturing Co., Ltd. Verfahren zur Züchtung von Einkristallen

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US4256531A (en) 1981-03-17
EP0000720B1 (de) 1982-07-07

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