EE03499B1 - Elektersides kasutatav seade ja meetod - Google Patents

Elektersides kasutatav seade ja meetod

Info

Publication number
EE03499B1
EE03499B1 EEP199900365A EEP9900365A EE03499B1 EE 03499 B1 EE03499 B1 EE 03499B1 EE P199900365 A EEP199900365 A EE P199900365A EE P9900365 A EEP9900365 A EE P9900365A EE 03499 B1 EE03499 B1 EE 03499B1
Authority
EE
Estonia
Prior art keywords
telecommunications
Prior art date
Application number
EEP199900365A
Other languages
English (en)
Inventor
Magnus Brandt Per-Olof
Bolin Thomas
Imberg Ulrik
Original Assignee
Telefonaktiebolaget Lm Ericsson (Publ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE9700669A external-priority patent/SE508506C2/sv
Application filed by Telefonaktiebolaget Lm Ericsson (Publ) filed Critical Telefonaktiebolaget Lm Ericsson (Publ)
Publication of EE9900365A publication Critical patent/EE9900365A/et
Publication of EE03499B1 publication Critical patent/EE03499B1/et

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0153—Electrical filters; Controlling thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0123—Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1791—Combined LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
  • Transmitters (AREA)
  • Financial Or Insurance-Related Operations Such As Payment And Settlement (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Burglar Alarm Systems (AREA)
EEP199900365A 1997-02-25 1998-02-20 Elektersides kasutatav seade ja meetod EE03499B1 (et)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9700669A SE508506C2 (sv) 1997-02-25 1997-02-25 Anordning och förfarande vid telekommunikation
PCT/SE1998/000305 WO1998037626A1 (en) 1997-02-25 1998-02-20 Device and process for telecommunication

Publications (2)

Publication Number Publication Date
EE9900365A EE9900365A (et) 2000-04-17
EE03499B1 true EE03499B1 (et) 2001-08-15

Family

ID=20405927

Family Applications (1)

Application Number Title Priority Date Filing Date
EEP199900365A EE03499B1 (et) 1997-02-25 1998-02-20 Elektersides kasutatav seade ja meetod

Country Status (6)

Country Link
JP (1) JP4073964B2 (et)
KR (1) KR100463924B1 (et)
AU (1) AU737208B2 (et)
EE (1) EE03499B1 (et)
HK (1) HK1027225A1 (et)
MY (1) MY128729A (et)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5062797B2 (ja) * 2000-05-22 2012-10-31 昭和電工株式会社 有機エレクトロルミネッセンス素子および発光材料
EP1605589A4 (en) * 2003-03-14 2007-03-21 Ntt Docomo Inc COMPARISON CIRCUIT
US7567782B2 (en) * 2006-07-28 2009-07-28 Freescale Semiconductor, Inc. Re-configurable impedance matching and harmonic filter system
KR101548811B1 (ko) 2013-10-31 2015-08-31 삼성전기주식회사 고조파 저감특성이 개선된 듀얼 밴드 무선 통신 장치
WO2015093462A1 (ja) 2013-12-20 2015-06-25 株式会社村田製作所 高周波回路及び該高周波回路を用いた送受信回路
JP6406362B2 (ja) * 2015-02-02 2018-10-17 株式会社村田製作所 可変フィルタ回路、高周波モジュール回路、および、通信装置
WO2018061950A1 (ja) * 2016-09-29 2018-04-05 株式会社村田製作所 弾性波フィルタ装置、マルチプレクサ、高周波フロントエンド回路及び通信装置
WO2018061949A1 (ja) * 2016-09-29 2018-04-05 株式会社村田製作所 弾性波フィルタ装置、マルチプレクサ、高周波フロントエンド回路及び通信装置
WO2018135538A1 (ja) 2017-01-19 2018-07-26 株式会社村田製作所 高周波フィルタ、高周波フロントエンド回路、および通信装置
CN108183331B (zh) * 2017-12-14 2020-12-01 Oppo广东移动通信有限公司 天线调谐电路、天线装置以及移动终端
CN114844515B (zh) * 2022-03-25 2023-08-29 中国电子科技集团公司第二十九研究所 提高宽带电子设备大功率输出信号频谱质量的装置及方法

Also Published As

Publication number Publication date
EE9900365A (et) 2000-04-17
AU6641298A (en) 1998-09-09
MY128729A (en) 2007-02-28
KR100463924B1 (ko) 2004-12-30
JP2001512642A (ja) 2001-08-21
AU737208B2 (en) 2001-08-09
HK1027225A1 (en) 2001-01-05
KR20000070991A (ko) 2000-11-25
JP4073964B2 (ja) 2008-04-09

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Legal Events

Date Code Title Description
KB4A Valid patent at the end of a year

Effective date: 20021231

KB4A Valid patent at the end of a year

Effective date: 20031231

HE1A Change of address
KB4A Valid patent at the end of a year

Effective date: 20041231

KB4A Valid patent at the end of a year

Effective date: 20051231

KB4A Valid patent at the end of a year

Effective date: 20061231

KB4A Valid patent at the end of a year

Effective date: 20071231

KB4A Valid patent at the end of a year

Effective date: 20081231

KB4A Valid patent at the end of a year

Effective date: 20091231

MM4A Lapsed by not paying the annual fees

Effective date: 20100220