EA200700629A1 - Высокоэффективный узконаправленный преобразователь света - Google Patents

Высокоэффективный узконаправленный преобразователь света

Info

Publication number
EA200700629A1
EA200700629A1 EA200700629A EA200700629A EA200700629A1 EA 200700629 A1 EA200700629 A1 EA 200700629A1 EA 200700629 A EA200700629 A EA 200700629A EA 200700629 A EA200700629 A EA 200700629A EA 200700629 A1 EA200700629 A1 EA 200700629A1
Authority
EA
Eurasian Patent Office
Prior art keywords
nanocrystals
highly efficient
light converter
directed light
new
Prior art date
Application number
EA200700629A
Other languages
English (en)
Other versions
EA010503B1 (ru
Inventor
Сергей Васильевич Гапоненко
Ульрике Воггон
Михаил Валентинович Артемьев
Леонид Иванович Гуринович
Николай Васильевич Гапоненко
Игорь Славович Молчан
Андрей Андреевич Лютич
Original Assignee
Государственное Научное Учреждение "Институт Молекулярной И Атомной Физики Национальной Академии Наук Республики Беларусь"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственное Научное Учреждение "Институт Молекулярной И Атомной Физики Национальной Академии Наук Республики Беларусь" filed Critical Государственное Научное Учреждение "Институт Молекулярной И Атомной Физики Национальной Академии Наук Республики Беларусь"
Publication of EA200700629A1 publication Critical patent/EA200700629A1/ru
Publication of EA010503B1 publication Critical patent/EA010503B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Luminescent Compositions (AREA)

Abstract

Предложена конструкция приборов нового типа, построенных на основе известных физических механизмов возбуждения фотолюминесценции в полупроводниковых квантоворазмерных нанокристаллах и факторов, повышающих эффективность излучения посредством модификации плотности фотонных состояний и процессов передачи энергии в системах легированных нанокристаллов. Идея успешно реализована в фотонных структурах типа "микропористый ксерогель/легированные нанокристаллы/мезопористый анодированный оксид алюминия", которые позволяют получать пленочные покрытия с новыми модифицированными свойствами в спектрах поглощения и люминесценции.
EA200700629A 2004-09-27 2004-09-27 Высокоэффективный узконаправленный преобразователь света EA010503B1 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/BY2004/000023 WO2006034561A1 (en) 2004-09-27 2004-09-27 High-efficient small-aperture light converter

Publications (2)

Publication Number Publication Date
EA200700629A1 true EA200700629A1 (ru) 2007-08-31
EA010503B1 EA010503B1 (ru) 2008-10-30

Family

ID=36118523

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200700629A EA010503B1 (ru) 2004-09-27 2004-09-27 Высокоэффективный узконаправленный преобразователь света

Country Status (2)

Country Link
EA (1) EA010503B1 (ru)
WO (1) WO2006034561A1 (ru)

Families Citing this family (18)

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US20090217967A1 (en) * 2008-02-29 2009-09-03 International Business Machines Corporation Porous silicon quantum dot photodetector
EP2139045A4 (en) 2008-04-09 2010-05-05 Ooo Novye Energet Tehnologii ELECTROMAGNETIC RADIATION CONVERTER
CN102017167B (zh) 2008-04-29 2016-05-18 皇家飞利浦电子股份有限公司 具有波长转换体的光检测器
US8927852B2 (en) * 2008-08-21 2015-01-06 Seagate Technology Llc Photovoltaic device with an up-converting quantum dot layer and absorber
US8138675B2 (en) 2009-02-27 2012-03-20 General Electric Company Stabilized emissive structures and methods of making
CN101853894B (zh) * 2010-04-14 2012-02-08 大连海事大学 一种纳米线异质结阵列基紫外光探测器及其制备方法
EP2378575A1 (de) 2010-04-19 2011-10-19 EMPA Eidgenössische Materialprüfungs- und Forschungsanstalt Optisches Element, insbesondere zur Veränderung des von einer LED- Lichtquelle emittierten Lichts, und Verfahren zu dessen Herstellung
EP2850669B1 (en) 2012-05-18 2016-02-24 Isis Innovation Limited Photovoltaic device comprising perovskites
PL2850627T3 (pl) 2012-05-18 2016-10-31 Urządzenie optoelektroniczne zawierające porowaty materiał rusztowania oraz perowskity
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
EP4089753A1 (en) 2012-09-18 2022-11-16 Oxford University Innovation Ltd. Optoelectronic device
CN103484099B (zh) * 2013-09-25 2014-12-24 中国科学院宁波材料技术与工程研究所 一种电场调控下显色材料及其制备方法
CN104877685B (zh) * 2015-06-17 2017-03-22 燕山大学 一种用于光电子器件核‑壳结构ZnSe/ZnS量子点制备方法
CN105126713B (zh) * 2015-07-24 2017-06-13 北京理工大学 一种二氧化钛包裹纳米晶材料及其制备方法
DE102018109577B3 (de) 2018-04-20 2019-05-09 Karlsruher Institut für Technologie Hybrid-Wärmepumpe mit Kompressions- und Adsorptionskreislauf, sowie Verfahren zumBetrieb und Verwendung
RU188920U1 (ru) * 2018-11-01 2019-04-29 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Устройство для сбора солнечного излучения и генерации носителей заряда для прозрачных солнечных батарей
US11655964B2 (en) 2020-07-14 2023-05-23 Sony Group Corporation Film, illumination device, projector color wheel and method of manufacturing a film
CN112018141B (zh) * 2020-08-14 2023-11-28 清华大学 基于不同形状单元的微型光谱芯片

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19621144A1 (de) * 1995-05-19 1996-11-21 Hahn Meitner Inst Berlin Gmbh Halbleiterbauelement auf der Basis von Silizium mit einer porösen Schicht und Verfahren für die Herstellung poröser Siliziumschichten
CN1146060C (zh) * 1996-06-19 2004-04-14 松下电器产业株式会社 光电子材料、使用该材料的器件
US7291782B2 (en) * 2002-06-22 2007-11-06 Nanosolar, Inc. Optoelectronic device and fabrication method
RU2217845C1 (ru) * 2002-09-04 2003-11-27 Займидорога Олег Антонович Гетерогенный фотоэлемент
CN1249819C (zh) * 2003-01-09 2006-04-05 中国科学院等离子体物理研究所 纳米多孔薄膜

Also Published As

Publication number Publication date
WO2006034561A1 (en) 2006-04-06
EA010503B1 (ru) 2008-10-30

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM RU