DK525276A - Fremgangsmade til fremstilling af n-doteret silicium med i radial retning skiveformet profil for sa vidt angar den specifikke elektriske modstand - Google Patents

Fremgangsmade til fremstilling af n-doteret silicium med i radial retning skiveformet profil for sa vidt angar den specifikke elektriske modstand

Info

Publication number
DK525276A
DK525276A DK525276A DK525276A DK525276A DK 525276 A DK525276 A DK 525276A DK 525276 A DK525276 A DK 525276A DK 525276 A DK525276 A DK 525276A DK 525276 A DK525276 A DK 525276A
Authority
DK
Denmark
Prior art keywords
doted
silicium
slate
procedure
manufacture
Prior art date
Application number
DK525276A
Other languages
Danish (da)
English (en)
Inventor
E Haas
K Platzoeder
H E Reinfelder
M Schnoeller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2552621A external-priority patent/DE2552621C3/de
Priority claimed from DE19752553362 external-priority patent/DE2553362C2/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK525276A publication Critical patent/DK525276A/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DK525276A 1975-11-24 1976-11-22 Fremgangsmade til fremstilling af n-doteret silicium med i radial retning skiveformet profil for sa vidt angar den specifikke elektriske modstand DK525276A (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2552621A DE2552621C3 (de) 1975-11-24 1975-11-24 Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes
DE19752553362 DE2553362C2 (de) 1975-11-27 1975-11-27 Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstands

Publications (1)

Publication Number Publication Date
DK525276A true DK525276A (da) 1977-05-25

Family

ID=25769639

Family Applications (1)

Application Number Title Priority Date Filing Date
DK525276A DK525276A (da) 1975-11-24 1976-11-22 Fremgangsmade til fremstilling af n-doteret silicium med i radial retning skiveformet profil for sa vidt angar den specifikke elektriske modstand

Country Status (4)

Country Link
JP (1) JPS5936819B2 (enrdf_load_stackoverflow)
DK (1) DK525276A (enrdf_load_stackoverflow)
FR (1) FR2332055A1 (enrdf_load_stackoverflow)
GB (1) GB1530948A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62257739A (ja) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd シリコンウエ−ハ及びその選別装置
RU2145128C1 (ru) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ)
US10468148B2 (en) 2017-04-24 2019-11-05 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers

Also Published As

Publication number Publication date
GB1530948A (en) 1978-11-01
FR2332055A1 (fr) 1977-06-17
FR2332055B3 (enrdf_load_stackoverflow) 1980-10-17
JPS5936819B2 (ja) 1984-09-06
JPS5265661A (en) 1977-05-31

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