JPS5936819B2 - ｎ型ド−ピングされたシリコン単結晶の製造方法 - Google Patents
ｎ型ド−ピングされたシリコン単結晶の製造方法Info
- Publication number
- JPS5936819B2 JPS5936819B2 JP14108276A JP14108276A JPS5936819B2 JP S5936819 B2 JPS5936819 B2 JP S5936819B2 JP 14108276 A JP14108276 A JP 14108276A JP 14108276 A JP14108276 A JP 14108276A JP S5936819 B2 JPS5936819 B2 JP S5936819B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- neutron
- irradiation
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 45
- 229910052710 silicon Inorganic materials 0.000 title claims description 35
- 239000010703 silicon Substances 0.000 title claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 101700004678 SLIT3 Proteins 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2552621A DE2552621C3 (de) | 1975-11-24 | 1975-11-24 | Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes |
| DE19752553362 DE2553362C2 (de) | 1975-11-27 | 1975-11-27 | Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstands |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5265661A JPS5265661A (en) | 1977-05-31 |
| JPS5936819B2 true JPS5936819B2 (ja) | 1984-09-06 |
Family
ID=25769639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14108276A Expired JPS5936819B2 (ja) | 1975-11-24 | 1976-11-24 | ｎ型ド−ピングされたシリコン単結晶の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5936819B2 (enrdf_load_stackoverflow) |
| DK (1) | DK525276A (enrdf_load_stackoverflow) |
| FR (1) | FR2332055A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1530948A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4836788A (en) * | 1985-11-12 | 1989-06-06 | Sony Corporation | Production of solid-state image pick-up device with uniform distribution of dopants |
| JPS62257739A (ja) * | 1986-04-30 | 1987-11-10 | Toshiba Ceramics Co Ltd | シリコンウエ−ハ及びその選別装置 |
| RU2145128C1 (ru) * | 1998-03-19 | 2000-01-27 | Закрытое акционерное общество "ЭЛЛИНА-НТ" | СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ) |
| US10468148B2 (en) | 2017-04-24 | 2019-11-05 | Infineon Technologies Ag | Apparatus and method for neutron transmutation doping of semiconductor wafers |
-
1976
- 1976-11-19 GB GB4825376A patent/GB1530948A/en not_active Expired
- 1976-11-22 DK DK525276A patent/DK525276A/da not_active Application Discontinuation
- 1976-11-22 FR FR7635081A patent/FR2332055A1/fr active Granted
- 1976-11-24 JP JP14108276A patent/JPS5936819B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1530948A (en) | 1978-11-01 |
| FR2332055A1 (fr) | 1977-06-17 |
| FR2332055B3 (enrdf_load_stackoverflow) | 1980-10-17 |
| JPS5265661A (en) | 1977-05-31 |
| DK525276A (da) | 1977-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1131808A (en) | Apparatus for measuring the concentrations of elements in a material by the capture gamma method | |
| US5433693A (en) | Neutron-capture therapy apparatus and method | |
| EP3026673B1 (en) | Neutron regulation apparatus and neutron irradiation apparatus | |
| Patterson | Homometric structures | |
| JPS5936819B2 (ja) | ｎ型ド−ピングされたシリコン単結晶の製造方法 | |
| US4119441A (en) | Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction | |
| DE102018109361A1 (de) | Einrichtung und Verfahren zur Neutronentransmutationsdotierung von Halbleiterwafern | |
| TW201912201A (zh) | 中子捕獲治療系統 | |
| Nikolaenko et al. | Effect of γ-irradiation on defect annealing in diamond | |
| Kim et al. | A new neutron transmutation doping system for radial irradiation uniformity | |
| JPS52134786A (en) | Radiation detector | |
| Shwartz | Electromagnetic calorimeter of the Belle II detector | |
| US4728371A (en) | Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation | |
| JP2010025781A (ja) | 中性子照射済ハフニウム制御棒のγ線崩壊加速装置 | |
| SU716286A1 (ru) | Термолюминесцентное вещество дл гамма-до-зиМЕТРА | |
| Yanch et al. | Design of an accelerator-based epithermal neutron beam for boron neutron capture therapy | |
| JPS57102008A (en) | Control of warp of semiconductor wafer | |
| Magelssen | Gain Scaling Relations—Heavy-Ion Targets | |
| Iyengar et al. | Calculations of the response of Moxon-Rae detectors for neutron capture cross-section measurements | |
| Von Halban et al. | Energy of neutrons liberated in the nuclear fission of uranium induced by thermal neutrons | |
| JP2024035924A (ja) | 中性子捕捉療法装置 | |
| Agu et al. | Self-powered neutron detectors for measuring epithermal neutron flux | |
| Frankenberg | Reparable and irreparable damage in yeast cells after irradiation with fast electrons, conventional X-rays and 241Am alpha particles | |
| Yanch et al. | Design of an Accelerator-Based Epithermal Neutron Beam for Boron Neutron Capture Therapy [Book Chapter] | |
| JPH04102096A (ja) | 熱中性子用遮蔽体 |