DK510488D0 - Pinfotodiode af ingaas/inp-typen - Google Patents

Pinfotodiode af ingaas/inp-typen

Info

Publication number
DK510488D0
DK510488D0 DK510488A DK510488A DK510488D0 DK 510488 D0 DK510488 D0 DK 510488D0 DK 510488 A DK510488 A DK 510488A DK 510488 A DK510488 A DK 510488A DK 510488 D0 DK510488 D0 DK 510488D0
Authority
DK
Denmark
Prior art keywords
pin
ingas
input
inp type
inp
Prior art date
Application number
DK510488A
Other languages
English (en)
Other versions
DK510488A (da
Inventor
Ichiro Tonai
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of DK510488D0 publication Critical patent/DK510488D0/da
Publication of DK510488A publication Critical patent/DK510488A/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DK510488A 1987-09-16 1988-09-14 Pinfotodiode af ingaas/inp-typen DK510488A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231423A JPS6473774A (en) 1987-09-16 1987-09-16 Pin photodiode of ingaas/inp

Publications (2)

Publication Number Publication Date
DK510488D0 true DK510488D0 (da) 1988-09-14
DK510488A DK510488A (da) 1989-03-17

Family

ID=16923349

Family Applications (1)

Application Number Title Priority Date Filing Date
DK510488A DK510488A (da) 1987-09-16 1988-09-14 Pinfotodiode af ingaas/inp-typen

Country Status (5)

Country Link
EP (1) EP0308335B1 (da)
JP (1) JPS6473774A (da)
CA (1) CA1292055C (da)
DE (1) DE3884729T2 (da)
DK (1) DK510488A (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452220B1 (en) 1999-12-09 2002-09-17 The Regents Of The University Of California Current isolating epitaxial buffer layers for high voltage photodiode array
KR20020014517A (ko) * 2000-08-18 2002-02-25 박종섭 씨모스 이미지센서의 저전압 핀드포토다이오드 제조방법
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
US8203195B2 (en) 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
TWI536596B (zh) * 2008-07-21 2016-06-01 量宏科技股份有限公司 用於安定、敏感性光檢測器的材料、製造設備與方法及由其等製成之影像感應器
WO2023008372A1 (ja) * 2021-07-29 2023-02-02 京セラ株式会社 フォトダイオード及び光感応デバイス

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5497390A (en) * 1978-01-19 1979-08-01 Toshiba Corp Manufacture of semiconductor photo detector
JPS57147286A (en) * 1981-03-06 1982-09-11 Olympus Optical Co Ltd Photodetector element and manufacture thereof
JPS5848479A (ja) * 1981-09-17 1983-03-22 Toshiba Corp 半導体光検出器
US4617192A (en) * 1982-12-21 1986-10-14 At&T Bell Laboratories Process for making optical INP devices
JPS60130871A (ja) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp ＩｎＧａＡｓ光検出器
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置

Also Published As

Publication number Publication date
CA1292055C (en) 1991-11-12
EP0308335A3 (en) 1989-12-06
DK510488A (da) 1989-03-17
DE3884729D1 (de) 1993-11-11
JPS6473774A (en) 1989-03-20
EP0308335A2 (en) 1989-03-22
DE3884729T2 (de) 1994-05-05
EP0308335B1 (en) 1993-10-06

Similar Documents

Publication Publication Date Title
DE3884094D1 (de) Kinderwagen.
IT1206879B (it) Passeggino con navicella ribaltabile
DE3874839D1 (de) Opto-elektrische verbindungsmittel.
DK444988A (da) Indgangs/udgangskredsloeb
DE3769994D1 (de) Eingabe-einrichtung.
DE3750134D1 (de) Umwandelbarer kinderwagen.
DE3887980D1 (de) Giessen optischer thermoplastischen komponenten.
KR860001562U (ko) 유모차의 좌석 연장부재
DE3888330D1 (de) Optischer Wellenleiter.
ATE75181T1 (de) Waermeschrumpfbarer artikel.
DE3778785D1 (de) Algaas/gaas komplementaere ic-struktur.
NO164552C (no) Innloepsanordning for fremstilling av fiberstoffbaner.
DK510488D0 (da) Pinfotodiode af ingaas/inp-typen
DE3781919D1 (de) Eingangsschaltung.
DE68923573D1 (de) Eingangsschaltungen.
NO865031D0 (no) Mikrostrimmelantenne.
FI862213A0 (fi) Eluppvaermd aongutvecklare och dess anvaendning vid destillationsanordningar.
IT8422530A0 (it) Passeggino ripiegabile per bambini.
FI871781A (fi) Anordning foer provtagning ur substans innehaollande fast aemne.
DE69009977D1 (de) Abscherbolzenverbindung.
DE3486182D1 (de) Faseroptisches bauelement.
DE3883424D1 (de) Optischer Halbleiter-Wellenleiter mit Hetero-Grenzfläche.
NO882010L (no) Svovelopploesende blanding.
DE3876313D1 (de) Dispersionsfarbstoffe.
DE3774483D1 (de) Komplementaer-eingangsschaltung.

Legal Events

Date Code Title Description
AHB Application shelved due to non-payment