DK403776A - Fremgangsmade til fremstilling af enkrystallinske siliciumstave - Google Patents
Fremgangsmade til fremstilling af enkrystallinske siliciumstaveInfo
- Publication number
- DK403776A DK403776A DK403776A DK403776A DK403776A DK 403776 A DK403776 A DK 403776A DK 403776 A DK403776 A DK 403776A DK 403776 A DK403776 A DK 403776A DK 403776 A DK403776 A DK 403776A
- Authority
- DK
- Denmark
- Prior art keywords
- encrystallinic
- procedure
- manufacture
- sticks
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/106—Seed pulling including sealing means details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2548046A DE2548046C3 (de) | 1975-10-27 | 1975-10-27 | Verfahren zum Ziehen einkristalliner Siliciumstäbe |
Publications (1)
Publication Number | Publication Date |
---|---|
DK403776A true DK403776A (da) | 1977-04-28 |
Family
ID=5960201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK403776A DK403776A (da) | 1975-10-27 | 1976-09-08 | Fremgangsmade til fremstilling af enkrystallinske siliciumstave |
Country Status (9)
Country | Link |
---|---|
US (1) | US4097329A (da) |
JP (1) | JPS5253777A (da) |
BE (1) | BE847618A (da) |
DE (1) | DE2548046C3 (da) |
DK (1) | DK403776A (da) |
FR (1) | FR2329343A1 (da) |
GB (1) | GB1524604A (da) |
IT (1) | IT1066265B (da) |
NL (1) | NL7609889A (da) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4353408A (en) * | 1980-04-11 | 1982-10-12 | Olin Corporation | Electromagnetic thin strip casting apparatus |
US4406731A (en) * | 1981-06-09 | 1983-09-27 | Ferrofluidics Corporation | Apparatus for and method of sealing shafts in crystal-growing furnace systems |
US4400232A (en) * | 1981-11-09 | 1983-08-23 | Eagle-Picher Industries, Inc. | Control of oxygen- and carbon-related crystal defects in silicon processing |
EP0186213B1 (en) * | 1984-12-28 | 1990-05-02 | Sumitomo Electric Industries Limited | Method for synthesizing compound semiconductor polycrystals and apparatus therefor |
JP2575360B2 (ja) * | 1986-06-09 | 1997-01-22 | 三菱マテリアル株式会社 | アンチモンド−プ単結晶の製造方法 |
US5196086A (en) * | 1987-04-09 | 1993-03-23 | Mitsubishi Materials Corporation | Monocrystal rod pulled from a melt |
US5173270A (en) * | 1987-04-09 | 1992-12-22 | Mitsubishi Materials Corporation | Monocrystal rod pulled from a melt |
JP2640683B2 (ja) * | 1988-12-12 | 1997-08-13 | 信越半導体株式会社 | 単結晶棒の引上げ装置 |
JPH0774116B2 (ja) * | 1989-10-05 | 1995-08-09 | 信越半導体株式会社 | Si単結晶中の酸素濃度調整方法およびその装置 |
US5269875A (en) * | 1989-10-05 | 1993-12-14 | Shin-Etsu Handotai Company, Limited | Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method |
JPH0777999B2 (ja) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | アンチモンドープ単結晶シリコンの育成方法 |
JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
SG49058A1 (en) * | 1993-07-21 | 1998-05-18 | Memc Electronic Materials | Improved method for growing silicon crystal |
JP2686223B2 (ja) * | 1993-11-30 | 1997-12-08 | 住友シチックス株式会社 | 単結晶製造装置 |
US5683505A (en) * | 1994-11-08 | 1997-11-04 | Sumitomo Sitix Corporation | Process for producing single crystals |
US8664093B2 (en) | 2012-05-21 | 2014-03-04 | Globalfoundries Inc. | Methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom |
CN105879656B (zh) * | 2015-11-24 | 2020-01-07 | 上海超硅半导体有限公司 | 单晶硅生长尾气固相处理技术 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL88324C (da) * | 1950-06-15 | |||
US2962363A (en) * | 1957-07-09 | 1960-11-29 | Pacific Semiconductors Inc | Crystal pulling apparatus and method |
US2981687A (en) * | 1958-04-03 | 1961-04-25 | British Thomson Houston Co Ltd | Production of mono-crystal semiconductor bodies |
US3194637A (en) * | 1960-06-22 | 1965-07-13 | Westinghouse Electric Corp | Apparatus for the continuous dendritic growth of crystalline material |
DE1233828B (de) * | 1964-07-03 | 1967-02-09 | Wacker Chemie Gmbh | Verfahren zur Herstellung, Reinigung und/oder Dotierung von ein- oder polykristallinen Halbleiterverbindungen |
-
1975
- 1975-10-27 DE DE2548046A patent/DE2548046C3/de not_active Expired
-
1976
- 1976-09-06 NL NL7609889A patent/NL7609889A/xx not_active Application Discontinuation
- 1976-09-08 DK DK403776A patent/DK403776A/da unknown
- 1976-09-10 IT IT51216/76A patent/IT1066265B/it active
- 1976-09-13 US US05/722,236 patent/US4097329A/en not_active Expired - Lifetime
- 1976-09-14 GB GB38000/76A patent/GB1524604A/en not_active Expired
- 1976-10-25 BE BE171770A patent/BE847618A/xx unknown
- 1976-10-26 FR FR7632188A patent/FR2329343A1/fr active Granted
- 1976-10-27 JP JP51129286A patent/JPS5253777A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2329343B1 (da) | 1981-12-18 |
IT1066265B (it) | 1985-03-04 |
FR2329343A1 (fr) | 1977-05-27 |
NL7609889A (nl) | 1977-04-29 |
JPS546511B2 (da) | 1979-03-29 |
BE847618A (fr) | 1977-04-25 |
DE2548046C3 (de) | 1982-12-02 |
DE2548046B2 (de) | 1978-11-16 |
GB1524604A (en) | 1978-09-13 |
JPS5253777A (en) | 1977-04-30 |
US4097329A (en) | 1978-06-27 |
DE2548046A1 (de) | 1977-04-28 |
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