DK2801153T3 - Anordning og metode til styring af halvleder-koblingsenheder - Google Patents

Anordning og metode til styring af halvleder-koblingsenheder Download PDF

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Publication number
DK2801153T3
DK2801153T3 DK12711218T DK12711218T DK2801153T3 DK 2801153 T3 DK2801153 T3 DK 2801153T3 DK 12711218 T DK12711218 T DK 12711218T DK 12711218 T DK12711218 T DK 12711218T DK 2801153 T3 DK2801153 T3 DK 2801153T3
Authority
DK
Denmark
Prior art keywords
coupling devices
controlling semiconductor
semiconductor coupling
controlling
devices
Prior art date
Application number
DK12711218T
Other languages
English (en)
Inventor
Denis René Pierre Mathieu
Original Assignee
Schneider Electric It Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schneider Electric It Corp filed Critical Schneider Electric It Corp
Application granted granted Critical
Publication of DK2801153T3 publication Critical patent/DK2801153T3/da

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009—AC switches, i.e. delivering AC power to a load
DK12711218T 2012-01-05 2012-01-05 Anordning og metode til styring af halvleder-koblingsenheder DK2801153T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2012/000160 WO2013102778A1 (en) 2012-01-05 2012-01-05 Apparatus and method for control of semiconductor switching devices

Publications (1)

Publication Number Publication Date
DK2801153T3 true DK2801153T3 (da) 2019-11-04

Family

ID=45895420

Family Applications (1)

Application Number Title Priority Date Filing Date
DK12711218T DK2801153T3 (da) 2012-01-05 2012-01-05 Anordning og metode til styring af halvleder-koblingsenheder

Country Status (7)

Country Link
US (1) US9509299B2 (da)
EP (1) EP2801153B1 (da)
CN (1) CN104040890B (da)
AU (1) AU2012364264B2 (da)
DK (1) DK2801153T3 (da)
IN (1) IN2014DN06225A (da)
WO (1) WO2013102778A1 (da)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9606567B2 (en) 2012-10-10 2017-03-28 Nxp Usa, Inc. Method and apparatus for providing electrical isolation
WO2015075497A1 (en) * 2013-11-22 2015-05-28 Freescale Semiconductor, Inc. Method and apparatus for controlling an igbt device
CN103986315B (zh) * 2014-06-10 2016-08-17 安徽工业大学 基于有源栅极电流控制方式的igbt电流源驱动电路及其控制方法
EP3174205A1 (en) * 2015-11-27 2017-05-31 ABB Technology Oy Control circuit with feedback
DE102016207384A1 (de) * 2016-04-29 2017-11-02 Robert Bosch Gmbh Verfahren zum Schutz eines Halbleiterschalters, Schutzvorrichtung für einen Halbleiterschalter und Ansteuerschaltung für einen Halbleiterschalter
US10071652B2 (en) * 2016-05-11 2018-09-11 Ford Global Technologies, Llc Dual mode IGBT gate drive to reduce switching loss
JP6805622B2 (ja) * 2016-08-12 2020-12-23 富士電機株式会社 半導体装置
CN108631557B (zh) * 2017-03-20 2020-03-10 台达电子企业管理（上海）有限公司 绝缘栅双极型晶体管的栅极电压控制电路及其控制方法
CN113193861A (zh) * 2021-04-16 2021-07-30 台达电子企业管理（上海）有限公司 一种防止半导体开关器件误开通的电路以及控制方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920224A (en) * 1998-02-17 1999-07-06 Harris Corporation Network for improving electro-magnetic interference response
US6091274A (en) * 1998-02-17 2000-07-18 Intersil Corporation Optimum placement of bypass capacitors in a network for improving electro-magnetic interference response
JP3255147B2 (ja) * 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
JP3514641B2 (ja) * 1998-10-30 2004-03-31 株式会社日立製作所 内燃機関用点火装置および点火制御システム
DE10149777A1 (de) * 2001-10-09 2003-04-24 Bosch Gmbh Robert Halbleiter-Schaltungsanordnung, insbesondere für Zündungsverwendungen, und Verwendung
DE10215363A1 (de) 2002-04-08 2003-10-30 Eupec Gmbh & Co Kg Schaltungsanordnung zum Ansteuern eines Halbleiterschalters
JP3883925B2 (ja) * 2002-07-30 2007-02-21 三菱電機株式会社 電力用半導体素子の駆動回路
US7466185B2 (en) * 2006-10-23 2008-12-16 Infineon Technologies Ag IGBT-Driver circuit for desaturated turn-off with high desaturation level
US8598921B2 (en) * 2006-11-22 2013-12-03 Ct-Concept Holding Gmbh Control circuit and method for controlling a power semiconductor switch
FR2936114B1 (fr) * 2008-09-15 2011-08-05 Converteam Technology Ltd Circuit d'equilibrage des tensions d'une pluralite de transistors igbt connectes en serie
DE102009045052B4 (de) * 2008-09-30 2013-04-04 Infineon Technologies Ag Bereitstellen einer Versorgungsspannung für eine Ansteuerschaltung eines Halbleiterschaltelements
FR2941577B1 (fr) * 2009-01-27 2011-02-11 Schneider Electric Ind Sas Dispositif de commande d'un transistor jfet
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置
JP5682269B2 (ja) * 2010-12-06 2015-03-11 サンケン電気株式会社 ゲート駆動回路及び半導体装置
US8310796B2 (en) * 2011-07-13 2012-11-13 General Electric Company Methods and systems for operating power converters
US8767369B2 (en) * 2011-12-20 2014-07-01 General Electric Company Method, power unit, and power system having gate voltage limiting circuit
WO2014034063A1 (ja) * 2012-08-30 2014-03-06 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
CN104040890B (zh) 2017-06-06
AU2012364264A1 (en) 2014-07-10
CN104040890A (zh) 2014-09-10
EP2801153A1 (en) 2014-11-12
AU2012364264B2 (en) 2017-05-11
US20150042397A1 (en) 2015-02-12
US9509299B2 (en) 2016-11-29
WO2013102778A1 (en) 2013-07-11
EP2801153B1 (en) 2019-08-21
IN2014DN06225A (da) 2015-10-23

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