IN2014DN06225A - - Google Patents
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- Publication number
- IN2014DN06225A IN2014DN06225A IN6225DEN2014A IN2014DN06225A IN 2014DN06225 A IN2014DN06225 A IN 2014DN06225A IN 6225DEN2014 A IN6225DEN2014 A IN 6225DEN2014A IN 2014DN06225 A IN2014DN06225 A IN 2014DN06225A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0009—AC switches, i.e. delivering AC power to a load
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2012/000160 WO2013102778A1 (en) | 2012-01-05 | 2012-01-05 | Apparatus and method for control of semiconductor switching devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN06225A true IN2014DN06225A (da) | 2015-10-23 |
Family
ID=45895420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN6225DEN2014 IN2014DN06225A (da) | 2012-01-05 | 2014-07-23 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9509299B2 (da) |
EP (1) | EP2801153B1 (da) |
CN (1) | CN104040890B (da) |
AU (1) | AU2012364264B2 (da) |
DK (1) | DK2801153T3 (da) |
IN (1) | IN2014DN06225A (da) |
WO (1) | WO2013102778A1 (da) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014057318A1 (en) | 2012-10-10 | 2014-04-17 | Freescale Semiconductor, Inc. | Method and apparatus for providing electrical isolation |
EP3072026B1 (en) * | 2013-11-22 | 2019-07-31 | NXP USA, Inc. | Method and apparatus for controlling an igbt device |
CN103986315B (zh) * | 2014-06-10 | 2016-08-17 | 安徽工业大学 | 基于有源栅极电流控制方式的igbt电流源驱动电路及其控制方法 |
EP3174205A1 (en) * | 2015-11-27 | 2017-05-31 | ABB Technology Oy | Control circuit with feedback |
DE102016207384A1 (de) * | 2016-04-29 | 2017-11-02 | Robert Bosch Gmbh | Verfahren zum Schutz eines Halbleiterschalters, Schutzvorrichtung für einen Halbleiterschalter und Ansteuerschaltung für einen Halbleiterschalter |
US10071652B2 (en) * | 2016-05-11 | 2018-09-11 | Ford Global Technologies, Llc | Dual mode IGBT gate drive to reduce switching loss |
JP6805622B2 (ja) * | 2016-08-12 | 2020-12-23 | 富士電機株式会社 | 半導体装置 |
CN108631557B (zh) * | 2017-03-20 | 2020-03-10 | 台达电子企业管理(上海)有限公司 | 绝缘栅双极型晶体管的栅极电压控制电路及其控制方法 |
CN113193861A (zh) * | 2021-04-16 | 2021-07-30 | 台达电子企业管理(上海)有限公司 | 一种防止半导体开关器件误开通的电路以及控制方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091274A (en) * | 1998-02-17 | 2000-07-18 | Intersil Corporation | Optimum placement of bypass capacitors in a network for improving electro-magnetic interference response |
US5920224A (en) * | 1998-02-17 | 1999-07-06 | Harris Corporation | Network for improving electro-magnetic interference response |
JP3255147B2 (ja) * | 1998-06-19 | 2002-02-12 | 株式会社デンソー | 絶縁ゲート型トランジスタのサージ保護回路 |
JP3514641B2 (ja) | 1998-10-30 | 2004-03-31 | 株式会社日立製作所 | 内燃機関用点火装置および点火制御システム |
DE10149777A1 (de) * | 2001-10-09 | 2003-04-24 | Bosch Gmbh Robert | Halbleiter-Schaltungsanordnung, insbesondere für Zündungsverwendungen, und Verwendung |
DE10215363A1 (de) * | 2002-04-08 | 2003-10-30 | Eupec Gmbh & Co Kg | Schaltungsanordnung zum Ansteuern eines Halbleiterschalters |
JP3883925B2 (ja) * | 2002-07-30 | 2007-02-21 | 三菱電機株式会社 | 電力用半導体素子の駆動回路 |
US7466185B2 (en) * | 2006-10-23 | 2008-12-16 | Infineon Technologies Ag | IGBT-Driver circuit for desaturated turn-off with high desaturation level |
US8598921B2 (en) * | 2006-11-22 | 2013-12-03 | Ct-Concept Holding Gmbh | Control circuit and method for controlling a power semiconductor switch |
FR2936114B1 (fr) * | 2008-09-15 | 2011-08-05 | Converteam Technology Ltd | Circuit d'equilibrage des tensions d'une pluralite de transistors igbt connectes en serie |
DE102009045052B4 (de) * | 2008-09-30 | 2013-04-04 | Infineon Technologies Ag | Bereitstellen einer Versorgungsspannung für eine Ansteuerschaltung eines Halbleiterschaltelements |
FR2941577B1 (fr) * | 2009-01-27 | 2011-02-11 | Schneider Electric Ind Sas | Dispositif de commande d'un transistor jfet |
JP5492518B2 (ja) * | 2009-10-02 | 2014-05-14 | 株式会社日立製作所 | 半導体駆動回路、及びそれを用いた半導体装置 |
JP5682269B2 (ja) * | 2010-12-06 | 2015-03-11 | サンケン電気株式会社 | ゲート駆動回路及び半導体装置 |
US8310796B2 (en) * | 2011-07-13 | 2012-11-13 | General Electric Company | Methods and systems for operating power converters |
US8767369B2 (en) * | 2011-12-20 | 2014-07-01 | General Electric Company | Method, power unit, and power system having gate voltage limiting circuit |
CN104604134B (zh) * | 2012-08-30 | 2017-06-30 | 株式会社电装 | 半导体装置 |
-
2012
- 2012-01-05 EP EP12711218.3A patent/EP2801153B1/en active Active
- 2012-01-05 AU AU2012364264A patent/AU2012364264B2/en not_active Ceased
- 2012-01-05 US US14/368,081 patent/US9509299B2/en not_active Expired - Fee Related
- 2012-01-05 DK DK12711218T patent/DK2801153T3/da active
- 2012-01-05 CN CN201280065835.4A patent/CN104040890B/zh not_active Expired - Fee Related
- 2012-01-05 WO PCT/IB2012/000160 patent/WO2013102778A1/en active Application Filing
-
2014
- 2014-07-23 IN IN6225DEN2014 patent/IN2014DN06225A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN104040890B (zh) | 2017-06-06 |
US9509299B2 (en) | 2016-11-29 |
AU2012364264A1 (en) | 2014-07-10 |
WO2013102778A1 (en) | 2013-07-11 |
DK2801153T3 (da) | 2019-11-04 |
US20150042397A1 (en) | 2015-02-12 |
EP2801153B1 (en) | 2019-08-21 |
CN104040890A (zh) | 2014-09-10 |
EP2801153A1 (en) | 2014-11-12 |
AU2012364264B2 (en) | 2017-05-11 |