DK2480493T3 - Forbedret selektivitet i en fremgangsmåde til xenon-difluorid-ætsning - Google Patents

Forbedret selektivitet i en fremgangsmåde til xenon-difluorid-ætsning Download PDF

Info

Publication number
DK2480493T3
DK2480493T3 DK10768051.4T DK10768051T DK2480493T3 DK 2480493 T3 DK2480493 T3 DK 2480493T3 DK 10768051 T DK10768051 T DK 10768051T DK 2480493 T3 DK2480493 T3 DK 2480493T3
Authority
DK
Denmark
Prior art keywords
difluorid
xenon
correction
procedure
improved selectivity
Prior art date
Application number
DK10768051.4T
Other languages
English (en)
Inventor
Anthony O'hara
Original Assignee
Memsstar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memsstar Ltd filed Critical Memsstar Ltd
Application granted granted Critical
Publication of DK2480493T3 publication Critical patent/DK2480493T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
DK10768051.4T 2009-09-25 2010-09-27 Forbedret selektivitet i en fremgangsmåde til xenon-difluorid-ætsning DK2480493T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0916871A GB2473851C (en) 2009-09-25 2009-09-25 Improved selectivity in a xenon difluoride etch process
PCT/GB2010/051611 WO2011036496A1 (en) 2009-09-25 2010-09-27 Improved selectivity in a xenon difluoride etch process

Publications (1)

Publication Number Publication Date
DK2480493T3 true DK2480493T3 (da) 2019-07-15

Family

ID=41350387

Family Applications (1)

Application Number Title Priority Date Filing Date
DK10768051.4T DK2480493T3 (da) 2009-09-25 2010-09-27 Forbedret selektivitet i en fremgangsmåde til xenon-difluorid-ætsning

Country Status (8)

Country Link
US (1) US9786526B2 (da)
EP (1) EP2480493B1 (da)
JP (1) JP5722902B2 (da)
CN (1) CN102712462B (da)
DK (1) DK2480493T3 (da)
ES (1) ES2732128T3 (da)
GB (1) GB2473851C (da)
WO (1) WO2011036496A1 (da)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
CN103021812B (zh) * 2012-12-20 2016-02-17 中国科学院上海微系统与信息技术研究所 一种ⅲ-ⅴoi结构的制备方法
JP6231893B2 (ja) 2014-01-27 2017-11-15 キヤノン株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2015149366A (ja) * 2014-02-05 2015-08-20 キヤノン株式会社 半導体装置の製造方法
CN104944364B (zh) * 2014-03-26 2018-11-06 盛美半导体设备（上海）有限公司 二氧化硅释放工艺
US10615073B2 (en) * 2015-02-15 2020-04-07 Acm Research (Shanghai) Inc. Method for removing barrier layer for minimizing sidewall recess
US10079150B2 (en) 2015-07-23 2018-09-18 Spts Technologies Limited Method and apparatus for dry gas phase chemically etching a structure
JP6904814B2 (ja) 2017-06-30 2021-07-21 キヤノン株式会社 中空構造体の製造方法、及び中空構造体
GB2580858B (en) * 2018-09-07 2021-07-21 Memsstar Ltd A method for detecting defects in thin film layers
GB202117751D0 (en) 2019-11-14 2022-01-26 Memsstar Ltd Method of manufacturing a microstructure
GB2606747A (en) 2021-05-19 2022-11-23 Memsstar Ltd Method of manufacturing a microstructure

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02250323A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd エッチング方法及び装置
JPH0496222A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
JP3198302B2 (ja) * 1999-04-20 2001-08-13 岡崎国立共同研究機構長 微細構造パターンの形成方法
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6290864B1 (en) * 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6949202B1 (en) * 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
JPWO2002050883A1 (ja) * 2000-12-18 2004-04-22 住友精密工業株式会社 洗浄方法とエッチング方法
US7027200B2 (en) * 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
GB0413554D0 (en) * 2004-06-17 2004-07-21 Point 35 Microstructures Ltd Improved method and apparartus for the etching of microstructures
CN1772594A (zh) * 2004-09-27 2006-05-17 Idc公司 便携式XeF2蚀刻室及其使用方法
US7192868B2 (en) * 2005-02-08 2007-03-20 International Business Machines Corporation Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same
WO2007100933A2 (en) * 2006-01-12 2007-09-07 Kla Tencor Technologies Corporation Etch selectivity enhancement, deposition quality evaluation, structural modification and three-dimensional imaging using electron beam activated chemical etch
US8314466B2 (en) * 2007-09-11 2012-11-20 Panasonic Corporation Silicon structure, method for manufacturing the same, and sensor chip

Also Published As

Publication number Publication date
ES2732128T3 (es) 2019-11-20
CN102712462A (zh) 2012-10-03
GB2473851A (en) 2011-03-30
US20120238101A1 (en) 2012-09-20
EP2480493B1 (en) 2019-05-01
JP2013506284A (ja) 2013-02-21
EP2480493A1 (en) 2012-08-01
GB0916871D0 (en) 2009-11-11
GB2473851C (en) 2013-08-21
US9786526B2 (en) 2017-10-10
GB2473851B (en) 2013-04-10
JP5722902B2 (ja) 2015-05-27
WO2011036496A1 (en) 2011-03-31
CN102712462B (zh) 2016-04-20

Similar Documents

Publication Publication Date Title
DK2480493T3 (da) Forbedret selektivitet i en fremgangsmåde til xenon-difluorid-ætsning
DK2366113T3 (da) Dgnss-korrektion til positionering
DK2467204T3 (da) Fremgangsmåde til fremstilling af en sorbent
DK2496562T3 (da) Fremgangsmåde til fremstilling af calcobutrol
DK2429486T3 (da) Fremgangsmåde til fremstilling af en tværbundet gel
DK2563300T3 (da) Ortese til korrigering af en benfejlstilling
DK2408807T3 (da) Fremgangsmåde til terapeutisk anvendelse
ZA201202871B (en) Formwork element
DK2310613T3 (da) Forbedret brudled til stigrør
DK2424959T3 (da) Fremgangsmåde til fremstilling af en hydrokrakningskatalysator
DK2488872T3 (da) Fremgangsmåde til prrsv detektering
DK2408659T3 (da) Frempind til cykler
ITPD20090053U1 (it) Paradordi per banchine
IT1395137B1 (it) Nuovi peptidi antipatogeni
GB0920869D0 (en) Parallel correction ammplifier
HUP0800260A2 (en) Feed-complementary for meatquality correction
FR2953337B1 (fr) Paratonnerre a fonctionnement regule
AT508085A3 (de) Abschalelement
IT1397375B1 (it) Cassero a disarmo rapido
GB201121500D0 (en) A collapsible support
GB0912813D0 (en) Ladder foot
TWM372710U (en) Foot roller used for sick-bed
IT1399176B1 (it) Cerotti biadesivi per la correzione delle orecchie a sventola
GB0921605D0 (en) Shuttering made easy
ITCT20090003U1 (it) Telepass -2 per non udenti