JPS58110609U
(ja)
*
|
1982-01-20 |
1983-07-28 |
富士ゼロックス株式会社 |
幅広ベルトの片寄り防止装置
|
EP0096493B1
(en)
*
|
1982-05-25 |
1987-08-19 |
Johnson Matthey Public Limited Company |
Plasma arc furnace
|
JPS5973043A
(ja)
*
|
1982-10-19 |
1984-04-25 |
House Food Ind Co Ltd |
易溶性ゲル化剤の製造法
|
EP0118655B1
(de)
*
|
1982-12-22 |
1988-03-02 |
VOEST-ALPINE Aktiengesellschaft |
Verfahren zur Durchführung von metallurgischen oder chemischen Prozessen und Niederschachtofen
|
US4583229A
(en)
*
|
1984-01-09 |
1986-04-15 |
Aluminum Company Of America |
Metal melting system
|
JPS60208430A
(ja)
*
|
1984-03-30 |
1985-10-21 |
Toyo Soda Mfg Co Ltd |
金属沃化物から高純度金属の製造法
|
US4581745A
(en)
*
|
1985-01-16 |
1986-04-08 |
Timet |
Electric arc melting apparatus and associated method
|
US4694464A
(en)
*
|
1986-07-30 |
1987-09-15 |
Plasma Energy Corporation |
Plasma arc heating apparatus and method
|
SE462070B
(sv)
*
|
1986-08-11 |
1990-04-30 |
Skf Steel Eng Ab |
Saett att kontinuerligt oeverhetta stora gasfloeden
|
US4801435A
(en)
*
|
1986-09-08 |
1989-01-31 |
Plasma Holdings N.V. |
Hybrid plasma reactor
|
DE3854792D1
(de)
*
|
1987-02-24 |
1996-02-01 |
Ibm |
Plasmareaktor
|
US4885074A
(en)
*
|
1987-02-24 |
1989-12-05 |
International Business Machines Corporation |
Plasma reactor having segmented electrodes
|
DK158382C
(da)
*
|
1987-10-15 |
1990-10-22 |
Rockwool Int |
Fremgangsmaade ved fremstilling af en smelte til dannelse af mineraluld samt apparat til udoevelse af fremgangsmaaden
|
US4806325A
(en)
*
|
1988-07-14 |
1989-02-21 |
Fmc Corporation |
Process for recovering elemental phosphorus and a metal concentrate from ferrophos
|
US5017754A
(en)
*
|
1989-08-29 |
1991-05-21 |
Hydro Quebec |
Plasma reactor used to treat powder material at very high temperatures
|
US5039312A
(en)
*
|
1990-02-09 |
1991-08-13 |
The United States Of America As Represented By The Secretary Of The Interior |
Gas separation with rotating plasma arc reactor
|
US5046145A
(en)
*
|
1990-04-20 |
1991-09-03 |
Hydro-Quebec |
Improved arc reactor with advanceable electrode
|
US5008511C1
(en)
*
|
1990-06-26 |
2001-03-20 |
Univ British Columbia |
Plasma torch with axial reactant feed
|
US5356524A
(en)
*
|
1993-04-20 |
1994-10-18 |
University Of Alaska |
Electrical method for conversion of molecular weights of particulates
|
WO1995005263A1
(en)
*
|
1993-08-19 |
1995-02-23 |
Refranco Corp. |
Treatment of particulate matter by electrical discharge
|
US5702621A
(en)
*
|
1993-08-19 |
1997-12-30 |
Refranco Corp. |
Method for the treatment of comminuted matter by electrical discharge
|
US5403991A
(en)
*
|
1993-08-19 |
1995-04-04 |
Refranco Corp. |
Reactor and method for the treatment of particulate matter by electrical discharge
|
WO1996006706A1
(en)
*
|
1994-09-01 |
1996-03-07 |
Refranco Corp. |
Treatment of particulate matter by electrical discharge
|
US5798496A
(en)
*
|
1995-01-09 |
1998-08-25 |
Eckhoff; Paul S. |
Plasma-based waste disposal system
|
US5932116A
(en)
*
|
1995-06-05 |
1999-08-03 |
Tohoku Unicom Co., Ltd. |
Power supply for multi-electrode discharge
|
US5801489A
(en)
*
|
1996-02-07 |
1998-09-01 |
Paul E. Chism, Jr. |
Three-phase alternating current plasma generator
|
FR2774400B1
(fr)
*
|
1998-02-04 |
2000-04-28 |
Physiques Et Chimiques |
Dispositif electrique pour degraissage, decapage ou passivation plasmachimique de metaux
|
US6781087B1
(en)
|
2000-01-18 |
2004-08-24 |
Scientific Utilization, Inc. |
Three-phase plasma generator having adjustable electrodes
|
AUPR186200A0
(en)
*
|
2000-12-04 |
2001-01-04 |
Tesla Group Holdings Pty Limited |
Plasma reduction processing of materials
|
TW519716B
(en)
*
|
2000-12-19 |
2003-02-01 |
Tokyo Electron Ltd |
Wafer bias drive for a plasma source
|
US20050070751A1
(en)
*
|
2003-09-27 |
2005-03-31 |
Capote Jose A |
Method and apparatus for treating liquid waste
|
US20050230350A1
(en)
*
|
2004-02-26 |
2005-10-20 |
Applied Materials, Inc. |
In-situ dry clean chamber for front end of line fabrication
|
US6971323B2
(en)
*
|
2004-03-19 |
2005-12-06 |
Peat International, Inc. |
Method and apparatus for treating waste
|
SE529053C2
(sv)
|
2005-07-08 |
2007-04-17 |
Plasma Surgical Invest Ltd |
Plasmaalstrande anordning, plasmakirurgisk anordning och användning av en plasmakirurgisk anordning
|
SE529056C2
(sv)
|
2005-07-08 |
2007-04-17 |
Plasma Surgical Invest Ltd |
Plasmaalstrande anordning, plasmakirurgisk anordning och användning av en plasmakirurgisk anordning
|
SE529058C2
(sv)
|
2005-07-08 |
2007-04-17 |
Plasma Surgical Invest Ltd |
Plasmaalstrande anordning, plasmakirurgisk anordning, användning av en plasmakirurgisk anordning och förfarande för att bilda ett plasma
|
KR100853428B1
(ko)
*
|
2005-11-30 |
2008-08-21 |
주식회사 엘지화학 |
회전식 플라즈마를 이용한 가스전환장치
|
US7832344B2
(en)
*
|
2006-02-28 |
2010-11-16 |
Peat International, Inc. |
Method and apparatus of treating waste
|
CA2581806C
(en)
*
|
2006-03-08 |
2012-06-26 |
Tekna Plasma Systems Inc. |
Plasma synthesis of nanopowders
|
US7735435B2
(en)
*
|
2006-05-24 |
2010-06-15 |
Diamond Power International, Inc. |
Apparatus for cleaning a smelt spout of a combustion device
|
US8618436B2
(en)
|
2006-07-14 |
2013-12-31 |
Ceramatec, Inc. |
Apparatus and method of oxidation utilizing a gliding electric arc
|
US7452513B2
(en)
*
|
2006-09-02 |
2008-11-18 |
Igor Matveev |
Triple helical flow vortex reactor
|
US7928338B2
(en)
|
2007-02-02 |
2011-04-19 |
Plasma Surgical Investments Ltd. |
Plasma spraying device and method
|
EP2116105A4
(en)
|
2007-02-23 |
2014-04-16 |
Ceramatec Inc |
CERAMIC ELECTRODE FOR ELECTRIC ARC SLIDE
|
US7589473B2
(en)
|
2007-08-06 |
2009-09-15 |
Plasma Surgical Investments, Ltd. |
Pulsed plasma device and method for generating pulsed plasma
|
US8735766B2
(en)
|
2007-08-06 |
2014-05-27 |
Plasma Surgical Investments Limited |
Cathode assembly and method for pulsed plasma generation
|
EP2247347A4
(en)
*
|
2008-02-08 |
2013-08-14 |
Peat International Inc |
METHOD AND APPARATUS FOR PROCESSING WASTE
|
US9997325B2
(en)
|
2008-07-17 |
2018-06-12 |
Verity Instruments, Inc. |
Electron beam exciter for use in chemical analysis in processing systems
|
US8671855B2
(en)
|
2009-07-06 |
2014-03-18 |
Peat International, Inc. |
Apparatus for treating waste
|
US8613742B2
(en)
|
2010-01-29 |
2013-12-24 |
Plasma Surgical Investments Limited |
Methods of sealing vessels using plasma
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
US9089319B2
(en)
|
2010-07-22 |
2015-07-28 |
Plasma Surgical Investments Limited |
Volumetrically oscillating plasma flows
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
US8808563B2
(en)
|
2011-10-07 |
2014-08-19 |
Applied Materials, Inc. |
Selective etch of silicon by way of metastable hydrogen termination
|
GB2497546B
(en)
*
|
2011-12-12 |
2015-08-05 |
Tetronics International Ltd |
Base metal recovery
|
US9114475B2
(en)
*
|
2012-03-15 |
2015-08-25 |
Holma Ag |
Plasma electrode for a plasma cutting device
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US9287095B2
(en)
|
2013-12-17 |
2016-03-15 |
Applied Materials, Inc. |
Semiconductor system assemblies and methods of operation
|
US9287134B2
(en)
|
2014-01-17 |
2016-03-15 |
Applied Materials, Inc. |
Titanium oxide etch
|
US9396989B2
(en)
|
2014-01-27 |
2016-07-19 |
Applied Materials, Inc. |
Air gaps between copper lines
|
US9293568B2
(en)
|
2014-01-27 |
2016-03-22 |
Applied Materials, Inc. |
Method of fin patterning
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
US9299575B2
(en)
|
2014-03-17 |
2016-03-29 |
Applied Materials, Inc. |
Gas-phase tungsten etch
|
US9299538B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9406523B2
(en)
|
2014-06-19 |
2016-08-02 |
Applied Materials, Inc. |
Highly selective doped oxide removal method
|
US9378969B2
(en)
|
2014-06-19 |
2016-06-28 |
Applied Materials, Inc. |
Low temperature gas-phase carbon removal
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9378978B2
(en)
|
2014-07-31 |
2016-06-28 |
Applied Materials, Inc. |
Integrated oxide recess and floating gate fin trimming
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9355856B2
(en)
|
2014-09-12 |
2016-05-31 |
Applied Materials, Inc. |
V trench dry etch
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
US9343272B1
(en)
|
2015-01-08 |
2016-05-17 |
Applied Materials, Inc. |
Self-aligned process
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
TWI716818B
(zh)
|
2018-02-28 |
2021-01-21 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
WO2021022384A1
(en)
*
|
2019-08-08 |
2021-02-11 |
Greenbound Industrial Technologies Inc. |
Method and apparatus for cracking hydrocarbons
|
US10704121B1
(en)
|
2019-08-22 |
2020-07-07 |
Capital One Services, Llc |
Systems and methods for lowering the reduction of iron ore energy
|
AU2020446084A1
(en)
*
|
2020-05-04 |
2023-01-05 |
Millennium E & C (M) SDN. BHD. |
An apparatus and method for solid waste treatment
|
EP4205515A2
(en)
|
2020-08-28 |
2023-07-05 |
Plasma Surgical Investments Limited |
Systems, methods, and devices for generating predominantly radially expanded plasma flow
|