DK142800C - - Google Patents

Info

Publication number
DK142800C
DK142800C DK372870A DK372870A DK142800C DK 142800 C DK142800 C DK 142800C DK 372870 A DK372870 A DK 372870A DK 372870 A DK372870 A DK 372870A DK 142800 C DK142800 C DK 142800C
Authority
DK
Denmark
Application number
DK372870A
Other languages
Danish (da)
Other versions
DK142800B (da
Inventor
P Tharmaratnam
Original Assignee
Philips' Glfb. N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips' Glfb. N.V. filed Critical Philips' Glfb. N.V.
Publication of DK142800B publication Critical patent/DK142800B/da
Application granted granted Critical
Publication of DK142800C publication Critical patent/DK142800C/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664—Vertical bipolar transistor in combination with diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/60—Substation equipment, e.g. for use by subscribers including speech amplifiers
    • H04M1/6008—Substation equipment, e.g. for use by subscribers including speech amplifiers in the transmitter circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DK372870AA 1969-11-11 1970-07-17 Polaritetsuafhængig transistorforstærker. DK142800B (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL6916988 1969-11-11
NL6916988A NL6916988A (de) 1969-11-11 1969-11-11
NL7007313 1970-05-20
NL7007313A NL7007313A (de) 1969-11-11 1970-05-20

Publications (2)

Publication Number Publication Date
DK142800B DK142800B (da) 1981-01-26
DK142800C true DK142800C (de) 1981-09-07

Family

ID=26644491

Family Applications (1)

Application Number Title Priority Date Filing Date
DK372870AA DK142800B (da) 1969-11-11 1970-07-17 Polaritetsuafhængig transistorforstærker.

Country Status (7)

Country Link
US (1) US3665330A (de)
JP (1) JPS521244B1 (de)
DE (1) DE2034318B2 (de)
DK (1) DK142800B (de)
FR (1) FR2071627A5 (de)
GB (1) GB1305730A (de)
NL (2) NL6916988A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
SE351335B (de) * 1972-01-05 1972-11-20 Ericsson Telefon Ab L M
DE2718644C2 (de) * 1977-04-27 1979-07-12 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter
AU518350B2 (en) * 1978-11-08 1981-09-24 International Standard Electric Corp. Bidirectional amplifier
IT1212518B (it) * 1982-01-29 1989-11-22 Ates Componenti Elettron Circuito raddrizzatore a ponte di transistori, con protezione controle sovracorrenti, per uso telefonico.
EP0491217A1 (de) * 1990-12-19 1992-06-24 Siemens Aktiengesellschaft Integrierte Transistor-Freilaufdioden-Anordnung
DE4333359C2 (de) * 1993-06-26 2002-08-14 Bosch Gmbh Robert Monolithisch integrierte Leistungsendstufe
KR101825567B1 (ko) * 2011-08-31 2018-02-05 삼성전자 주식회사 단말장치의 마이크로폰 극성 제어장치 및 방법

Also Published As

Publication number Publication date
NL6916988A (de) 1971-05-13
NL7007313A (de) 1971-11-23
FR2071627A5 (de) 1971-09-17
DE2034318A1 (de) 1971-05-19
DK142800B (da) 1981-01-26
DE2034318B2 (de) 1972-08-31
US3665330A (en) 1972-05-23
JPS521244B1 (de) 1977-01-13
GB1305730A (de) 1973-02-07

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Legal Events

Date Code Title Description
PBP Patent lapsed