DK1367716T3 - Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere - Google Patents

Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere

Info

Publication number
DK1367716T3
DK1367716T3 DK03005025T DK03005025T DK1367716T3 DK 1367716 T3 DK1367716 T3 DK 1367716T3 DK 03005025 T DK03005025 T DK 03005025T DK 03005025 T DK03005025 T DK 03005025T DK 1367716 T3 DK1367716 T3 DK 1367716T3
Authority
DK
Denmark
Prior art keywords
overcurrent
over
circuit arrangement
temperature protection
power semiconductors
Prior art date
Application number
DK03005025T
Other languages
Danish (da)
English (en)
Inventor
Dejan Schreiber
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Application granted granted Critical
Publication of DK1367716T3 publication Critical patent/DK1367716T3/da

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
DK03005025T 2002-03-07 2003-03-06 Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere DK1367716T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10210181A DE10210181C1 (de) 2002-03-07 2002-03-07 Schaltungsanordnung und Verfahren zum Überstrom- und Übertemperaturschutz von Leistungshalbleiterschaltern

Publications (1)

Publication Number Publication Date
DK1367716T3 true DK1367716T3 (da) 2008-09-15

Family

ID=7714048

Family Applications (1)

Application Number Title Priority Date Filing Date
DK03005025T DK1367716T3 (da) 2002-03-07 2003-03-06 Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere

Country Status (5)

Country Link
EP (1) EP1367716B1 (es)
AT (1) ATE397805T1 (es)
DE (2) DE10210181C1 (es)
DK (1) DK1367716T3 (es)
ES (1) ES2306819T3 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057094B2 (en) * 2007-11-16 2011-11-15 Infineon Technologies Ag Power semiconductor module with temperature measurement
EP3654506A1 (de) 2018-11-16 2020-05-20 Siemens Aktiengesellschaft Überstromerkennung eines elektronischen schalters

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3104015C2 (de) * 1981-02-05 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Überstromschutzanordnung für einen Halbleiterschalter
DE3216833A1 (de) * 1982-05-05 1983-11-10 Siemens AG, 1000 Berlin und 8000 München Schutzschaltung fuer einen schalttransistor
US4954917A (en) * 1989-04-12 1990-09-04 General Electric Company Power transistor drive circuit with improved short circuit protection
US5847436A (en) * 1994-03-18 1998-12-08 Kabushiki Kaisha Tokai Rika Denki Seisakusho Bipolar transistor having integrated thermistor shunt
SE509969C2 (sv) * 1996-08-02 1999-03-29 Ericsson Telefon Ab L M Anordning och förfarande för räkning av flanker på elektriska pulser

Also Published As

Publication number Publication date
EP1367716A1 (de) 2003-12-03
ATE397805T1 (de) 2008-06-15
DE10210181C1 (de) 2003-07-17
DE50309940D1 (de) 2008-07-17
EP1367716B1 (de) 2008-06-04
ES2306819T3 (es) 2008-11-16

Similar Documents

Publication Publication Date Title
EP3449572B1 (en) Junction temperature and current sensing
US8946995B2 (en) LED driver circuit
HK1142990A1 (en) High power resistor having an improved operating temperature range and method for making same
DK1614203T3 (da) Elektrisk effektafbryder
US9136199B2 (en) Monitoring and controlling temperatures in a semiconductor structure
DE502007002102D1 (de) Temperaturüberwachung bei Leistungsschaltern
WO2004008500A3 (en) Method of protecting semiconductor device and protection apparatus for semiconductor device using the same
WO2002029949A3 (en) Semiconductor device with protective functions
AR018219A1 (es) Aparato y metodo para detectar fallas auto-disipantes en un circuito de suministro de energia electrica en corriente alterna
DK1367716T3 (da) Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere
DE60323152D1 (de) Polyarylen mit verminderter wärmeausdehung
JP2011529188A (ja) 標準型電界効果トランジスタの電流及び温度の感知
DE60222116D1 (de) Nichtlineare transistorschaltung mit thermischer stabilität
JP6218156B2 (ja) 電力変換装置及び電力変換装置の制御方法
WO2005008727A3 (en) Transient protection and current control of devices
JP2020505901A5 (es)
ATE379850T1 (de) Strombegrenzungseinrichtung mit supraleitendem schaltelement
KR101731902B1 (ko) 강압전류에 대한 mosfet 스위치 보호회로
TW200509495A (en) Method and apparatus for integrated circuit protection
WO2013131596A1 (en) Control circuitry for controlling a semiconductor switch
DE50311044D1 (de) Elektronische Schutzschaltung
Tournier et al. SiC MOSFET with Embedded Current Sensor for SSCB Application-Enabeling Real Time Dynamic SOA
KR100393012B1 (ko) 고전력 전자시스템용 온도검출장치
JP2002204566A (ja) 直流電源回路の突入電流防止回路
Dang et al. A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs