DK1367716T3 - Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere - Google Patents
Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledereInfo
- Publication number
- DK1367716T3 DK1367716T3 DK03005025T DK03005025T DK1367716T3 DK 1367716 T3 DK1367716 T3 DK 1367716T3 DK 03005025 T DK03005025 T DK 03005025T DK 03005025 T DK03005025 T DK 03005025T DK 1367716 T3 DK1367716 T3 DK 1367716T3
- Authority
- DK
- Denmark
- Prior art keywords
- overcurrent
- over
- circuit arrangement
- temperature protection
- power semiconductors
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10210181A DE10210181C1 (de) | 2002-03-07 | 2002-03-07 | Schaltungsanordnung und Verfahren zum Überstrom- und Übertemperaturschutz von Leistungshalbleiterschaltern |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1367716T3 true DK1367716T3 (da) | 2008-09-15 |
Family
ID=7714048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK03005025T DK1367716T3 (da) | 2002-03-07 | 2003-03-06 | Kredslöbsarrangement og fremgangsmåde til overströms- og overtemperaturbeskyttelse af effekthalvledere |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1367716B1 (es) |
AT (1) | ATE397805T1 (es) |
DE (2) | DE10210181C1 (es) |
DK (1) | DK1367716T3 (es) |
ES (1) | ES2306819T3 (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8057094B2 (en) * | 2007-11-16 | 2011-11-15 | Infineon Technologies Ag | Power semiconductor module with temperature measurement |
EP3654506A1 (de) | 2018-11-16 | 2020-05-20 | Siemens Aktiengesellschaft | Überstromerkennung eines elektronischen schalters |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3104015C2 (de) * | 1981-02-05 | 1984-10-11 | Siemens AG, 1000 Berlin und 8000 München | Überstromschutzanordnung für einen Halbleiterschalter |
DE3216833A1 (de) * | 1982-05-05 | 1983-11-10 | Siemens AG, 1000 Berlin und 8000 München | Schutzschaltung fuer einen schalttransistor |
US4954917A (en) * | 1989-04-12 | 1990-09-04 | General Electric Company | Power transistor drive circuit with improved short circuit protection |
US5847436A (en) * | 1994-03-18 | 1998-12-08 | Kabushiki Kaisha Tokai Rika Denki Seisakusho | Bipolar transistor having integrated thermistor shunt |
SE509969C2 (sv) * | 1996-08-02 | 1999-03-29 | Ericsson Telefon Ab L M | Anordning och förfarande för räkning av flanker på elektriska pulser |
-
2002
- 2002-03-07 DE DE10210181A patent/DE10210181C1/de not_active Expired - Fee Related
-
2003
- 2003-03-06 AT AT03005025T patent/ATE397805T1/de active
- 2003-03-06 DE DE50309940T patent/DE50309940D1/de not_active Expired - Lifetime
- 2003-03-06 ES ES03005025T patent/ES2306819T3/es not_active Expired - Lifetime
- 2003-03-06 DK DK03005025T patent/DK1367716T3/da active
- 2003-03-06 EP EP03005025A patent/EP1367716B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1367716A1 (de) | 2003-12-03 |
ATE397805T1 (de) | 2008-06-15 |
DE10210181C1 (de) | 2003-07-17 |
DE50309940D1 (de) | 2008-07-17 |
EP1367716B1 (de) | 2008-06-04 |
ES2306819T3 (es) | 2008-11-16 |
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