DK1367716T3 - Circuit arrangement and method for overcurrent and over-temperature protection of power semiconductors - Google Patents

Circuit arrangement and method for overcurrent and over-temperature protection of power semiconductors

Info

Publication number
DK1367716T3
DK1367716T3 DK03005025T DK03005025T DK1367716T3 DK 1367716 T3 DK1367716 T3 DK 1367716T3 DK 03005025 T DK03005025 T DK 03005025T DK 03005025 T DK03005025 T DK 03005025T DK 1367716 T3 DK1367716 T3 DK 1367716T3
Authority
DK
Denmark
Prior art keywords
overcurrent
over
circuit arrangement
temperature protection
power semiconductors
Prior art date
Application number
DK03005025T
Other languages
Danish (da)
Inventor
Dejan Schreiber
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Application granted granted Critical
Publication of DK1367716T3 publication Critical patent/DK1367716T3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Abstract

The protection circuit has a voltage source (Vm), a reference voltage source (Vref), a voltage comparator (10) and a positive temperature coefficient resistance (20), connected in series with a diode (6) and the monitored power semiconductor switch (2) and thermally coupled with the latter. An Independent claim for an overcurrent and/or over-temperature detection method for a power semiconductor switch is also included.
DK03005025T 2002-03-07 2003-03-06 Circuit arrangement and method for overcurrent and over-temperature protection of power semiconductors DK1367716T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10210181A DE10210181C1 (en) 2002-03-07 2002-03-07 Overcurrent and over-temperature protection circuit for power semiconductor switch uses diode and positive temperature coefficient resistance in series with latter

Publications (1)

Publication Number Publication Date
DK1367716T3 true DK1367716T3 (en) 2008-09-15

Family

ID=7714048

Family Applications (1)

Application Number Title Priority Date Filing Date
DK03005025T DK1367716T3 (en) 2002-03-07 2003-03-06 Circuit arrangement and method for overcurrent and over-temperature protection of power semiconductors

Country Status (5)

Country Link
EP (1) EP1367716B1 (en)
AT (1) ATE397805T1 (en)
DE (2) DE10210181C1 (en)
DK (1) DK1367716T3 (en)
ES (1) ES2306819T3 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057094B2 (en) * 2007-11-16 2011-11-15 Infineon Technologies Ag Power semiconductor module with temperature measurement
EP3654506A1 (en) 2018-11-16 2020-05-20 Siemens Aktiengesellschaft Over-current detection of an electronic switch

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3104015C2 (en) * 1981-02-05 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Overcurrent protection arrangement for a semiconductor switch
DE3216833A1 (en) * 1982-05-05 1983-11-10 Siemens AG, 1000 Berlin und 8000 München PROTECTIVE CIRCUIT FOR A SWITCHING TRANSISTOR
US4954917A (en) * 1989-04-12 1990-09-04 General Electric Company Power transistor drive circuit with improved short circuit protection
US5847436A (en) * 1994-03-18 1998-12-08 Kabushiki Kaisha Tokai Rika Denki Seisakusho Bipolar transistor having integrated thermistor shunt
SE509969C2 (en) * 1996-08-02 1999-03-29 Ericsson Telefon Ab L M Apparatus and method for counting flanks on electrical pulses

Also Published As

Publication number Publication date
DE10210181C1 (en) 2003-07-17
ES2306819T3 (en) 2008-11-16
DE50309940D1 (en) 2008-07-17
EP1367716B1 (en) 2008-06-04
EP1367716A1 (en) 2003-12-03
ATE397805T1 (en) 2008-06-15

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