DK129817B - Felteffekthalvlederørgan og fremgangsmåde til dets fremstilling. - Google Patents

Felteffekthalvlederørgan og fremgangsmåde til dets fremstilling.

Info

Publication number
DK129817B
DK129817B DK363562AA DK363562A DK129817B DK 129817 B DK129817 B DK 129817B DK 363562A A DK363562A A DK 363562AA DK 363562 A DK363562 A DK 363562A DK 129817 B DK129817 B DK 129817B
Authority
DK
Denmark
Prior art keywords
manufacture
field effect
effect semiconductor
semiconductor pipe
pipe
Prior art date
Application number
DK363562AA
Other languages
Danish (da)
English (en)
Other versions
DK129817C (is"
Inventor
P Weimer
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of DK129817B publication Critical patent/DK129817B/da
Application granted granted Critical
Publication of DK129817C publication Critical patent/DK129817C/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
DK363562AA 1961-08-17 1962-08-17 Felteffekthalvlederørgan og fremgangsmåde til dets fremstilling. DK129817B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13209561A 1961-08-17 1961-08-17

Publications (2)

Publication Number Publication Date
DK129817B true DK129817B (da) 1974-11-18
DK129817C DK129817C (is") 1975-04-28

Family

ID=32092230

Family Applications (1)

Application Number Title Priority Date Filing Date
DK363562AA DK129817B (da) 1961-08-17 1962-08-17 Felteffekthalvlederørgan og fremgangsmåde til dets fremstilling.

Country Status (7)

Country Link
US (1) US3258663A (is")
BE (1) BE621226A (is")
DE (1) DE1464363B1 (is")
DK (1) DK129817B (is")
GB (1) GB1019741A (is")
NL (1) NL282170A (is")
SE (1) SE302161B (is")

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NL301884A (is") * 1962-12-17
DE1464880B2 (de) * 1964-05-05 1970-11-12 Danfoss A/S, Nordborg (Dänemark) Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen
US3381188A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Planar multi-channel field-effect triode
US3381187A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co High-frequency field-effect triode device
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
US3379931A (en) * 1964-12-01 1968-04-23 Gen Telephone & Elect Electroluminescent translator utilizing thin film transistors
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3369159A (en) * 1964-12-21 1968-02-13 Texas Instruments Inc Printed transistors and methods of making same
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
US3414781A (en) * 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
NL6501947A (is") * 1965-02-17 1966-08-18
US3378688A (en) * 1965-02-24 1968-04-16 Fairchild Camera Instr Co Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions
US3445732A (en) * 1965-06-28 1969-05-20 Ledex Inc Field effect device having an electrolytically insulated gate
US3414740A (en) * 1965-09-08 1968-12-03 Ibm Integrated insulated gate field effect logic circuitry
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
GB1142674A (en) * 1966-02-18 1969-02-12 Mullard Ltd Improvements in and relating to insulated gate field effect transistors
US3509432A (en) * 1966-06-15 1970-04-28 Massachusetts Inst Technology Field effect space-charge-limited solid state thin-film device
US3402331A (en) * 1966-08-02 1968-09-17 Philips Corp Solid-state active electronic device and microcircuits containing same
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
NL6611537A (is") * 1966-08-17 1968-02-19
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
US3436817A (en) * 1967-02-13 1969-04-08 Us Air Force Method of making fringing field controlled thin film active device
US3520051A (en) * 1967-05-01 1970-07-14 Rca Corp Stabilization of thin film transistors
US3470610A (en) * 1967-08-18 1969-10-07 Conductron Corp Method of producing a control system
US3500137A (en) * 1967-12-22 1970-03-10 Texas Instruments Inc Cryogenic semiconductor devices
US3629669A (en) * 1968-11-25 1971-12-21 Gen Motors Corp Passivated wire-bonded semiconductor device
US3906296A (en) * 1969-08-11 1975-09-16 Nasa Stored charge transistor
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
US3680204A (en) * 1969-12-12 1972-08-01 Massachusetts Inst Technology Solid state device
US3614552A (en) * 1970-02-16 1971-10-19 Elektonische Bavelemente K Veb Insulated gate field effect transistors
US3627662A (en) * 1970-02-24 1971-12-14 Gte Laboratories Inc Thin film transistor and method of fabrication thereof
FR2112024B1 (is") * 1970-07-02 1973-11-16 Commissariat Energie Atomique
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads
DE2820331C3 (de) * 1978-05-10 1982-03-18 Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
US4343081A (en) * 1979-06-22 1982-08-10 L'etat Francais Represente Par Le Secretaire D'etat Aux Postes Et Telecommunications Et A La Telediffusion (Centre National D'etudes Des Telecommunications) Process for making semi-conductor devices
US4534103A (en) * 1980-02-07 1985-08-13 At&T Bell Laboratories Method of making self-aligned metal gate field effect transistors
EP0051940B1 (en) * 1980-11-06 1985-05-02 National Research Development Corporation Annealing process for a thin-film semiconductor device and obtained devices
GB2107115B (en) * 1981-07-17 1985-05-09 Citizen Watch Co Ltd Method of manufacturing insulated gate thin film effect transitors
FR2510260A1 (fr) * 1981-07-24 1983-01-28 Suisse Fond Rech Microtech Dispositif semiconducteur sensible aux ions
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US4398340A (en) * 1982-04-26 1983-08-16 The United States Of America As Represented By The Secretary Of The Army Method for making thin film field effect transistors
US4546375A (en) * 1982-06-24 1985-10-08 Rca Corporation Vertical IGFET with internal gate and method for making same
US4461071A (en) * 1982-08-23 1984-07-24 Xerox Corporation Photolithographic process for fabricating thin film transistors
USH655H (en) 1983-02-24 1989-07-04 Radiation hardening of MISFET devices
US5172203A (en) * 1983-12-23 1992-12-15 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
US5242844A (en) * 1983-12-23 1993-09-07 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
US5162892A (en) * 1983-12-24 1992-11-10 Sony Corporation Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
EP0667645A1 (en) * 1984-11-05 1995-08-16 Hitachi, Ltd. Superconducting device
US4551352A (en) * 1985-01-17 1985-11-05 Rca Corporation Method of making P-type hydrogenated amorphous silicon
US5036376A (en) * 1986-01-31 1991-07-30 Texas Instruments Incorporated Passivation oxide conversion
US5272361A (en) * 1989-06-30 1993-12-21 Semiconductor Energy Laboratory Co., Ltd. Field effect semiconductor device with immunity to hot carrier effects
US5250818A (en) * 1991-03-01 1993-10-05 Board Of Trustees Of Leland Stanford University Low temperature germanium-silicon on insulator thin-film transistor
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
BE408194A (is") * 1934-03-02
BE436972A (is") * 1938-11-15
BE527524A (is") * 1949-05-30
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
NL92243C (is") * 1950-05-17
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
NL91981C (is") * 1951-08-24
NL202404A (is") * 1955-02-18
US3041209A (en) * 1955-06-28 1962-06-26 Gen Electric Method of making a thermionic cathode
US2820727A (en) * 1956-05-22 1958-01-21 Gen Electric Method of metallizing ceramic bodies
US2918628A (en) * 1957-01-23 1959-12-22 Otmar M Stuetzer Semiconductor amplifier
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US3002137A (en) * 1957-09-04 1961-09-26 Sprague Electric Co Voltage dependent ceramic capacitor
DE1130523B (de) * 1958-01-22 1962-05-30 Siemens Ag Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
US3065393A (en) * 1958-12-09 1962-11-20 Nippon Electric Co Capacitor
NL265382A (is") * 1960-03-08

Also Published As

Publication number Publication date
DK129817C (is") 1975-04-28
US3258663A (en) 1966-06-28
SE302161B (is") 1968-07-08
GB1019741A (en) 1966-02-09
BE621226A (is") 1962-12-03
NL282170A (is")
DE1464363B1 (de) 1970-09-24

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