DK117481B - Fremgangsmåde til dannelse af germaniumdioxidlag med tetragonal krystalstruktur på et legeme af germanium til brug som maske ved dotering. - Google Patents
Fremgangsmåde til dannelse af germaniumdioxidlag med tetragonal krystalstruktur på et legeme af germanium til brug som maske ved dotering.Info
- Publication number
- DK117481B DK117481B DK377263AA DK377263A DK117481B DK 117481 B DK117481 B DK 117481B DK 377263A A DK377263A A DK 377263AA DK 377263 A DK377263 A DK 377263A DK 117481 B DK117481 B DK 117481B
- Authority
- DK
- Denmark
- Prior art keywords
- germanium
- doping
- mask
- crystal structure
- dioxide layer
- Prior art date
Links
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 title 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 229940119177 germanium dioxide Drugs 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
- Formation Of Insulating Films (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB30660/62A GB976559A (en) | 1962-08-09 | 1962-08-09 | Improvements in or relating to germanium bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK117481B true DK117481B (da) | 1970-05-04 |
Family
ID=10311112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK377263AA DK117481B (da) | 1962-08-09 | 1963-08-07 | Fremgangsmåde til dannelse af germaniumdioxidlag med tetragonal krystalstruktur på et legeme af germanium til brug som maske ved dotering. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3340163A (xx) |
| AT (1) | AT242749B (xx) |
| BE (1) | BE635971A (xx) |
| CH (1) | CH414020A (xx) |
| DE (1) | DE1294137B (xx) |
| DK (1) | DK117481B (xx) |
| GB (1) | GB976559A (xx) |
| NL (1) | NL296350A (xx) |
| SE (1) | SE310971B (xx) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3431636A (en) * | 1964-11-12 | 1969-03-11 | Texas Instruments Inc | Method of making diffused semiconductor devices |
| US3401056A (en) * | 1965-09-03 | 1968-09-10 | Gen Electric Co Ltd | Formation of coatings on germanium bodies |
| US3401054A (en) * | 1965-09-03 | 1968-09-10 | Gen Electric Co Ltd | Formation of coatings on germanium bodies |
| US3442775A (en) * | 1965-10-22 | 1969-05-06 | Philips Corp | Formation of coating on germanium bodies |
| DE1521986A1 (de) * | 1965-12-10 | 1970-05-27 | Siemens Ag | Verfahren zum Herstellen eines nichtwasserloeslichen UEberzuges aus Germaniumoxyd an der Oberflaeche eines Germaniumkristalles |
| JPS5676538A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
| US4766093A (en) * | 1984-07-30 | 1988-08-23 | International Business Machines Corp. | Chemically formed self-aligned structure and wave guide |
| CN102234829A (zh) * | 2010-04-23 | 2011-11-09 | 立督科技股份有限公司 | 阳极氧化多重染色制程 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1331756A (fr) * | 1961-08-14 | 1963-07-05 | Ass Elect Ind | Procédés perfectionnés de fabrication de transistors |
-
0
- BE BE635971D patent/BE635971A/xx unknown
- NL NL296350D patent/NL296350A/xx unknown
-
1962
- 1962-08-09 GB GB30660/62A patent/GB976559A/en not_active Expired
-
1963
- 1963-08-06 US US300157A patent/US3340163A/en not_active Expired - Lifetime
- 1963-08-07 AT AT636163A patent/AT242749B/de active
- 1963-08-07 DK DK377263AA patent/DK117481B/da unknown
- 1963-08-08 CH CH981363A patent/CH414020A/fr unknown
- 1963-08-08 DE DEG38424A patent/DE1294137B/de active Pending
- 1963-08-08 SE SE8720/63A patent/SE310971B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3340163A (en) | 1967-09-05 |
| NL296350A (xx) | |
| BE635971A (xx) | |
| GB976559A (en) | 1964-11-25 |
| CH414020A (fr) | 1966-05-31 |
| AT242749B (de) | 1965-10-11 |
| DE1294137B (de) | 1969-04-30 |
| SE310971B (xx) | 1969-05-19 |
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