CH414020A - Corps en germanium et procédé de fabrication dudit corps - Google Patents

Corps en germanium et procédé de fabrication dudit corps

Info

Publication number
CH414020A
CH414020A CH981363A CH981363A CH414020A CH 414020 A CH414020 A CH 414020A CH 981363 A CH981363 A CH 981363A CH 981363 A CH981363 A CH 981363A CH 414020 A CH414020 A CH 414020A
Authority
CH
Switzerland
Prior art keywords
manufacturing
germanium
germanium body
Prior art date
Application number
CH981363A
Other languages
English (en)
Inventor
Edwin Bradshaw Stanley
George Wilkes John
Original Assignee
Gen Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric Co Ltd filed Critical Gen Electric Co Ltd
Publication of CH414020A publication Critical patent/CH414020A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/02Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/32Anodisation of semiconducting materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
  • Chemically Coating (AREA)
CH981363A 1962-08-09 1963-08-08 Corps en germanium et procédé de fabrication dudit corps CH414020A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB30660/62A GB976559A (en) 1962-08-09 1962-08-09 Improvements in or relating to germanium bodies

Publications (1)

Publication Number Publication Date
CH414020A true CH414020A (fr) 1966-05-31

Family

ID=10311112

Family Applications (1)

Application Number Title Priority Date Filing Date
CH981363A CH414020A (fr) 1962-08-09 1963-08-08 Corps en germanium et procédé de fabrication dudit corps

Country Status (9)

Country Link
US (1) US3340163A (fr)
AT (1) AT242749B (fr)
BE (1) BE635971A (fr)
CH (1) CH414020A (fr)
DE (1) DE1294137B (fr)
DK (1) DK117481B (fr)
GB (1) GB976559A (fr)
NL (1) NL296350A (fr)
SE (1) SE310971B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3431636A (en) * 1964-11-12 1969-03-11 Texas Instruments Inc Method of making diffused semiconductor devices
US3401054A (en) * 1965-09-03 1968-09-10 Gen Electric Co Ltd Formation of coatings on germanium bodies
US3401056A (en) * 1965-09-03 1968-09-10 Gen Electric Co Ltd Formation of coatings on germanium bodies
US3442775A (en) * 1965-10-22 1969-05-06 Philips Corp Formation of coating on germanium bodies
DE1521986A1 (de) * 1965-12-10 1970-05-27 Siemens Ag Verfahren zum Herstellen eines nichtwasserloeslichen UEberzuges aus Germaniumoxyd an der Oberflaeche eines Germaniumkristalles
JPS5676538A (en) * 1979-11-28 1981-06-24 Sumitomo Electric Ind Ltd Formation of insulating film on semiconductor substrate
US4766093A (en) * 1984-07-30 1988-08-23 International Business Machines Corp. Chemically formed self-aligned structure and wave guide
CN102234829A (zh) * 2010-04-23 2011-11-09 立督科技股份有限公司 阳极氧化多重染色制程

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1331756A (fr) * 1961-08-14 1963-07-05 Ass Elect Ind Procédés perfectionnés de fabrication de transistors

Also Published As

Publication number Publication date
GB976559A (en) 1964-11-25
DK117481B (da) 1970-05-04
US3340163A (en) 1967-09-05
NL296350A (fr)
AT242749B (de) 1965-10-11
SE310971B (fr) 1969-05-19
BE635971A (fr)
DE1294137B (de) 1969-04-30

Similar Documents

Publication Publication Date Title
FR1383064A (fr) Récipient déformable et procédé de fabrication dudit récipient
CH408766A (fr) Récipient déformable et procédé de fabrication dudit récipient
FR1398396A (fr) Procédé de fabrication de corps creux et dispositif pour sa réalisation
CH377003A (fr) Transistor et procédé de fabrication dudit transistor
CH397877A (fr) Corps semi-conducteur monocristallin et procédé de fabrication dudit corps
CH414020A (fr) Corps en germanium et procédé de fabrication dudit corps
FR1352082A (fr) Corps en céramique semi-cristalline et son procédé de fabrication
FR1335696A (fr) Corps à revêtement pelliculaire et son procédé de fabrication
FR1509909A (fr) Procédé de fabrication de 3-hydroxy-benzisoxazoles
FR1358646A (fr) Procédé de fabrication de corps creux et corps creux ainsi obtenus
FR1390117A (fr) Corps creux complexe et son procédé de fabrication
FR1338019A (fr) Corps semi-conducteurs monocristallins et leur procédé de fabrication
FR1446819A (fr) Tube et procédé de fabrication dudit tube
CH422734A (fr) Corps compact et procédé de formation de ce corps
FR1296806A (fr) Procédé de fabrication de corps creux et corps creux résultant de son application
FR1290268A (fr) Procédé de fabrication de toluylènediamines 2-4 et 2-6
FR1330442A (fr) Corps semiconducteur et son procédé de fabrication
CH427936A (fr) Corps diélectrique, procédé de fabrication et utilisation dudit corps
FR1385538A (fr) Procédé de fabrication de corps creux polyédriques et corps obtenus
FR1337731A (fr) Corps superconducteur et procédé de formation de celui-ci
FR1263496A (fr) Corps de boîte et son procédé de fabrication
FR1351876A (fr) Corps ferro-électrique et son procédé de fabrication
FR1314997A (fr) Nouveaux corps réfractaires et procédé de fabrication
CH438230A (fr) Procédé de fabrication d'un corps semi-conducteur constitué par un monocristal de germanium
FR1358362A (fr) Procédé de fabrication de dioxolanes et dioxanes