DE966571C - Betriebsschaltung eines Vierzonen-Flaechentransistors - Google Patents

Betriebsschaltung eines Vierzonen-Flaechentransistors

Info

Publication number
DE966571C
DE966571C DEN8285A DEN0008285A DE966571C DE 966571 C DE966571 C DE 966571C DE N8285 A DEN8285 A DE N8285A DE N0008285 A DEN0008285 A DE N0008285A DE 966571 C DE966571 C DE 966571C
Authority
DE
Germany
Prior art keywords
zone
zones
transistor
electrode
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEN8285A
Other languages
German (de)
English (en)
Inventor
Frederik Hendrik Stieltjes
Leonard Johan Tummers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE966571C publication Critical patent/DE966571C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H03F3/3437—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers with complementary transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DEN8285A 1953-01-13 1954-01-10 Betriebsschaltung eines Vierzonen-Flaechentransistors Expired DE966571C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL753015X 1953-01-13

Publications (1)

Publication Number Publication Date
DE966571C true DE966571C (de) 1957-08-22

Family

ID=19825189

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN8285A Expired DE966571C (de) 1953-01-13 1954-01-10 Betriebsschaltung eines Vierzonen-Flaechentransistors

Country Status (4)

Country Link
DE (1) DE966571C (enrdf_load_html_response)
FR (1) FR1091289A (enrdf_load_html_response)
GB (1) GB753015A (enrdf_load_html_response)
NL (2) NL95282C (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps
DE1255134B (de) * 1959-01-14 1967-11-30 Shockley Transistor Corp Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2570978A (en) * 1949-10-11 1951-10-09 Bell Telephone Labor Inc Semiconductor translating device
US2623102A (en) * 1948-06-26 1952-12-23 Bell Telephone Labor Inc Circuit element utilizing semiconductive materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2623102A (en) * 1948-06-26 1952-12-23 Bell Telephone Labor Inc Circuit element utilizing semiconductive materials
US2570978A (en) * 1949-10-11 1951-10-09 Bell Telephone Labor Inc Semiconductor translating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1255134B (de) * 1959-01-14 1967-11-30 Shockley Transistor Corp Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps

Also Published As

Publication number Publication date
NL95282C (enrdf_load_html_response)
FR1091289A (fr) 1955-04-08
NL175251B (nl)
GB753015A (en) 1956-07-18

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